CM300DY-34A Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com Dual IGBTMOD™ A-Series Module 300 Amperes/1700 Volts A F F W G2 B E J N L (4 PLACES) G E2 H E1 C2E1 E2 C1 K K K G G1 P Q P Description: Powerex IGBTMOD™ Modules are designed for use in switching applications. Each module consists of two IGBT Transistors in a half-bridge configuration with each transistor having a reverseconnected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management. M NUTS (3 PLACES) D Q T THICK U WIDTH P S C V LABEL R G2 E2 C2E1 E2 Features: £ Low Drive Power £ Low VCE(sat) £ Discrete Super-Fast Recovery Free-Wheel Diode £ Isolated Baseplate for Easy Heat Sinking C1 E1 G1 Outline Drawing and Circuit Diagram Dimensions A 4.33 B C Inches 3.15 Millimeters Dimensions Inches Millimeters 110.0 M M6 Metric M6 80.0 N 1.18 30.0 P 0.71 18.0 Q 0.28 7.0 1.14+0.04/-0.02 29.0+1.0/-0.5 D 3.66±0.01 93.0±0.25 E 2.44±0.01 62.0±0.25 R 0.83 21.2 S 0.33 8.5 F 0.98 25.0 G 0.24 6.0 T 0.02 0.5 U 0.110 2.8 H 0.59 15.0 J 0.81 20.5 V 0.16 4.0 W 0.85 21.5 K 0.55 14.0 L 0.26 Dia. Dia. 6.5 01/10 Rev. 1 Applications: £ AC Motor Control £ UPS £ Battery Powered Supplies Ordering Information: Example: Select the complete part module number you desire from the table below -i.e. CM300DY-34A is a 1700V (VCES), 300 Ampere Dual IGBTMOD™ Power Module. Type Current Rating Amperes VCES Volts (x 50) CM 300 34 1 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com CM300DY-34A Dual IGBTMOD™ A-Series Module 300 Amperes/1700 Volts Absolute Maximum Ratings, Tj = 25°C unless otherwise specified Ratings Symbol CM300DY-34A Units Tj –40 to 150 °C Junction Temperature Storage Temperature Tstg –40 to 125 °C Collector-Emitter Voltage (G-E Short) VCES 1700 Volts Gate-Emitter Voltage (C-E Short) VGES ±20 Volts IC 300 Amperes Collector Current (DC, TC = 108°C)*4 Peak Collector Current (Pulse Repetition)*2 ICM 600 Amperes Maximum Collector Dissipation (TC = 25°C, Tj ≤ 150°C)*2,*4 PC 2900 Watts 1 Emitter Current (TC = 25°C) IE* 300 Amperes IEM*1 600 Amperes Mounting Torque, M5 Main Terminal — 30 in-lb Mounting Torque, M6 Mounting — 40 in-lb — 580 Grams VISO 3500 Volts Peak Emitter Current (Pulse Repetition)*2 Weight Isolation Voltage (Main Terminal to Baseplate, f = 60Hz, AC 1 min.) Static Electrical Characteristics, Tj = 25°C unless otherwise specified Characteristics Collector-Cutoff Current Gate Leakage Current Symbol Test Conditions Min. Typ. Max. Units ICES VCE = VCES, VGE = 0V — — 1.0 mA IGES VGE = VGES, VCE = 0V — — 2.0 µA Gate-Emitter Threshold Voltage VGE(th) IC = 30mA, VCE = 10V 5.5 7.0 8.5 Volts Collector-Emitter Saturation Voltage VCE(sat) IC = 300A, VGE = 15V, Tj = 25°C*3 — 2.2 2.8 Volts IC = 300A, VGE = 15V, Tj = 125°C*3 — 2.45 — Volts QG VCC = 1000V, IC = 300A, VGE = 15V — 2000 — nC VEC*1 IE = 300A, VGE = 0V*3 — — 3.0 Volts Min. Typ. Max. Units — — 74.0 nf — — 8.4 nf — — 1.6 nf Total Gate Charge Emitter-Collector Voltage Dynamic Electrical Characteristics, Tj = 25°C unless otherwise specified Characteristics Cies Output Capacitance Coes Reverse Transfer Capacitance Cres Inductive Turn-on Delay Time td(on) Load Rise Time Switch Turn-off Delay Time Time Fall Time Test Conditions VCE = 10V, VGE = 0V — — 950 ns tr VCC = 1000V, IC = 300A, — — 300 ns td(off) VGE1 = VGE2 = 15V, RG = 1.6Ω, — — 1000 ns tf Inductive Load — — 350 ns 1 Diode Reverse Recovery Time trr* Switching Operation, — — 450 ns Diode Reverse Recovery Charge Qrr*1 IE = 300A — 30 — µC *1 *2 *3 *4 2 Symbol Input Capacitance Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi). Pulse width and repetition rate should be such that device junction temperature (Tj) does not exceed Tj(max) rating. Pulse width and repetition rate should be such as to cause negligible temperature rise. Case temperature (TC), and heatsink temperature (Tf) measured point is just under the chips. 01/10 Rev. 1 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com CM300DY-34A Dual IGBTMOD™ A-Series Module 300 Amperes/1700 Volts Thermal and Mechanical Characteristics, Tj = 25°C unless otherwise specified Characteristics Symbol Test Conditions Min. Units — — 0.043 °C/W — 0.072 °C/W Rth(j-c)Q Per IGBT* Thermal Resistance, Junction to Case Rth(j-c)D Per FWDi*4 Rth(c-f) Thermal Grease Applied*4,*5 External Gate Resistance Max. — Thermal Resistance, Junction to Case Contact Thermal Resistance Typ. 4 RG — — — °C/W 1.6 — 16 Ω *4 Case temperature (TC), and heatsink temperature (Tf) measured point is just under the chips. *5 Typical value is measured by using thermally conductive grease of λ = 0.9 [W/(m • K)]. COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) VGE = 20V 12 COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) 500 5 13 Tj = 25oC 15 400 11 300 200 10 100 0 8 0 4 6 8 4 3 2 1 0 10 600 VCE = 15V Tj = 25°C Tj = 125°C 200 0 400 400 300 200 100 0 600 VGE = 10V Tj = 25°C Tj = 125°C 500 0 4 8 12 16 COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) COLLECTOR-CURRENT, IC, (AMPERES) GATE-EMITTER VOLTAGE, VGE, (VOLTS) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) CAPACITANCE VS. VCE (TYPICAL) 103 10 IC = 600A 8 IC = 300A 6 IC = 120A 4 2 0 102 Tj = 25°C 0 4 8 12 16 GATE-EMITTER VOLTAGE, VGE, (VOLTS) 01/10 Rev. 1 20 CAPACITANCE, Cies, Coes, Cres, (nF) COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) 2 9 EMITTER CURRENT, IE, (AMPERES) COLLECTOR CURRENT, IC, (AMPERES) 600 TRANSFER CHARACTERISTICS (TYPICAL) COLLECTOR-CURRENT, IC, (AMPERES) OUTPUT CHARACTERISTICS (TYPICAL) 102 Tj = 25°C Tj = 125°C 101 0 1 2 3 EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS) 20 Cies 101 Coes 100 Cres VGE = 0V 4 10-1 10-1 100 101 102 COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) 3 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com CM300DY-34A Dual IGBTMOD™ A-Series Module 300 Amperes/1700 Volts SWITCHING TIME VS. COLLECTOR CURRENT (TYPICAL) tr 101 101 SWITCHING LOSS, Eon, Eoff, Err, (mJ/PULSE) 103 102 103 Eon Eoff 101 102 NORMALIZED TRANSIENT THERMAL IMPEDANCE, Zth(j-c') Zth = Rth • (NORMALIZED VALUE) GATE RESISTANCE, RG, (Ω) 10-3 TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT & FWDi) 10-2 10-1 100 102 102 Irr trr EMITTER CURRENT, IC, (AMPERES) 101 VCC = 1000V VGE = 15V RG = 1.6Ω Tj = 125°C Inductive Load 102 103 GATE CHARGE VS. VGE 103 102 Eoff Err COLLECTOR CURRENT, IC, (AMPERES) VCC = 1000V VGE = 15V RG = 1.6Ω Tj = 25°C Inductive Load 101 101 Eon 102 100 101 102 REVERSE RECOVERY CHARACTERISTICS (TYPICAL) 101 100 10-2 101 SWITCHING LOSS VS. GATE RESISTANCE (TYPICAL) Err 10-1 VCC = 1000V VGE = 15V IC = 300A Tj = 125°C Inductive Load GATE RESISTANCE, RG, (Ω) VCC = 1000V VGE = 15V IC = 300A Tj = 125°C Inductive Load 10-3 tr 102 COLLECTOR CURRENT, IC, (AMPERES) 102 100 tf 101 100 103 SWITCHING LOSS, Eon, Eoff, Err, (mJ/PULSE) 102 td(on) 101 103 20 GATE-EMITTER VOLTAGE, VGE, (VOLTS) td(on) td(off) 103 REVERSE RECOVERY CURRENT, Irr, (AMPERES) tf SWITCHING TIME, td(on), tr, td(off), tf, (ns) td(off) 103 103 104 VCC = 1000V VGE = 15V RG = 1.6Ω Tj = 125°C Inductive Load REVERSE RECOVERY TIME, trr, (ns) SWITCHING TIME, td(on), tr, td(off), tf, (ns) 104 SWITCHING LOSS VS. COLLECTOR CURRENT (TYPICAL) SWITCHING TIME VS. GATE RESISTANCE (TYPICAL) IC = 300A 16 VCC = 800V VCC = 1000V 12 8 4 0 0 1000 2000 3000 GATE CHARGE, QG, (nC) 101 10-1 Single Pulse TC = 25°C Per Unit Base = Rth(j-c) = 0.043°C/W (IGBT) Rth(j-c) = 0.072°C/W (FWDi) 10-2 10-5 10-4 10-3 10-3 TIME, (s) 4 01/10 Rev. 1