CM300DX-24A Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 Dual IGBTMOD™ NX-Series Module 300 Amperes/1200 Volts A D E J F J G Y (4 PLACES) AD AE AF H 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 Q ST 47 U 24 Z R S T Q 48 U AA B AB 23 DETAIL "B" 1 W V X M L 2 3 4 5 6 7 8 N K AG 9 10 11 12 13 14 15 16 17 18 19 20 21 22 K P L DETAIL "A" AL AM AK AT AU E1C2(24) E1C2(23) Tr2 Di2 Di1 C1(22) E1(16) Tr1 DETAIL "B" AN G1(15) G2(38) E2(39) AX C AR AS AP AV AW AJ AH AC (4 PLACES) AQ DETAIL "A" E2 (47) C1 (48) Th NTC TH1 (1) *ALL PIN DIMENSIONS WITHIN A TOLERANCE OF ±0.5 TH2 (2) Outline Drawing and Circuit Diagram Dimensions A B C D E F G H J K L M N P Q R S T U V W X Y Rev. 11/08 Inches Millimeters Dimensions 5.98 2.44 0.67 5.39 4.79 4.33±0.02 3.89 3.72 0.53 0.15 0.28 0.30 1.95 0.9 0.55 0.87 0.67 0.48 0.24 0.16 0.37 0.83 M6 152.0 62.0 17.0 137.0 121.7 110.0±0.5 99.0 94.5 13.5 3.8 7.25 7.75 49.54 22.86 14.0 22.0 17.0 12.0 6.0 4.2 6.5 21.14 M6 Z AA AB AC AD AE AF AG AH AJ AK AL AM AN AP AQ AR AS AT AU AV AW AX Inches Millimeters 1.53 39.0 1.97±0.02 50.0±0.5 2.26 57.5 0.22 Dia. 5.5 Dia. 0.67+0.04/-0.0217.0+1.0/-0.5 0.51 13.0 0.27 7.0 0.03 0.8 0.81 20.5 0.12 3.0 0.14 3.5 0.21 5.4 0.49 12.5 0.15 3.81 0.05 1.15 0.025 0.65 0.29 7.4 0.24 6.2 0.17 Dia. 4.3 Dia. 0.10 Dia. 2.5 Dia. 0.08 Dia. 2.1 Dia. 0.06 1.5 0.49 12.5 Description: Powerex IGBTMOD™ Modules are designed for use in switching applications. Each module consists of two IGBT Transistors in a half-bridge configuration with each transistor having a reverseconnected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management. Features: £ Low Drive Power £ Low VCE(sat) £ Discrete Super-Fast Recovery Free-Wheel Diode £ Isolated Baseplate for Easy Heat Sinking Applications: £ AC Motor Control £ Motion/Servo Control £ Photovoltaic/Fuel Cell Ordering Information: Example: Select the complete module number you desire from the table below -i.e. CM300DX-24A is a 1200V (VCES), 300 Ampere Dual IGBTMOD™ Power Module. Type Current Rating Amperes VCES Volts (x 50) CM 300 24 1 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 CM300DX-24A Dual IGBTMOD™ NX-Series Module 300 Amperes/1200 Volts Absolute Maximum Ratings, Tj = 25°C unless otherwise specified Characteristics Symbol Power Device Junction Temperature CM300DX-24A Units Tj -40 to 150 °C Tstg -40 to 125 °C Mounting Torque, M5 Mounting Screws — 31 in-lb Mounting Torque, M6 Main Terminal Screws — 40 in-lb Storage Temperature Module Weight (Typical) — 330 Grams VISO 2500 Volts Collector-Emitter Voltage (G-E Short) VCES 1200 Volts Gate-Emitter Voltage (C-E Short) VGES ±20 Volts IC 300 Amperes ICM 600 Amperes Isolation Voltage, AC 1 minute, 60Hz Sinusoidal Inverter Sector Collector Current (TC = 90°C)* Peak Collector Current** Emitter Current (TC = 25°C, Tj < 150°C)* Peak Emitter Current (Tj < 150°C)** Maximum Collector Dissipation (TC = 25°C, Tj < 150°C)* IE*** 300 Amperes IEM*** 600 Amperes PC 1890 Watts *TC, Tf measured point is just under the chips. **Pulse width and repetition rate should be such that device junction temperature (Tj) does not exceed Tj(max) rating. ***Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi). CHIP LOCATION (TOP VIEW) Chip Location (Top View) 97.1 83.6 NTC Thermistor 39.4 FWDi 0 IGBT 0 0 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 17.3 47 24 26.5 30.8 30.8 37.4 Th 40.0 48 23 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 97.1 4 83.6 3 34.0 2 28.5 1 0 17.3 Dimensions in mm (Tolerance: ±1mm) 2 Rev. 11/08 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 CM300DX-24A Dual IGBTMOD™ NX-Series Module 300 Amperes/1200 Volts Electrical and Mechanical Characteristics, Tj = 25°C unless otherwise specified Inverter Sector Characteristics Collector Cutoff Current Gate-Emitter Threshold Voltage Gate Leakage Current Collector-Emitter Saturation Voltage Symbol Test Conditions Min. Typ. Max. Units ICES VCE = VCES, VGE = 0V — — 1.0 mA VGE(th) IC = 30mA, VCE = 10V 6 7 8 Volts IGES VGE = VGES, VCE = 0V — — 0.5 µA VCE(sat) IC = 300A, VGE = 15V, Tj = 25°C — 2.0 2.6 Volts IC = 300A, VGE = 15V, Tj = 125°C — 2.2 — Volts IC = 300A, VGE = 15V, Chip — 1.9 — Volts — — 47.0 nF — — 4.0 nF Input Capacitance Cies Output Capacitance Coes Reverse Transfer Capacitance Cres Total Gate Charge QG VCE = 10V, VGE = 0V — — 0.9 nF VCC = 600V, IC = 300A, VGE = 15V — 1350 — nC — — 550 ns VCC = 600V, IC = 300A, — — 180 ns Inductive Turn-on Delay Time td(on) Load Turn-on Rise Time tr Switch Turn-off Delay Time td(off) VGE = ±15V, — — 600 ns Time Turn-off Fall Time tf RG = 1.0Ω, IE = 300A, — — 600 ns Inductive Load Switching Operation — — 250 ns — 8.0 — µC IE = 300A, VGE = 0V — 2.6 3.4 Volts IE = 300A, VGE = 0V, Chip — 2.5 — Volts Reverse Recovery Time* trr Reverse Recovery Charge* Qrr Emitter-Collector Voltage* VEC Thermal and Mechanical Characteristics, Tj = 25°C unless otherwise specified Characteristics Module Lead Resistance Symbol Test Conditions Min. Typ. Max. Units Rlead Main Termnals-Chip (Per Switch) — 1.2 — mΩ Thermal Resistance, Junction to Case** Rth(j-c)Q Per IGBT — — 0.066 °C/W Thermal Resistance, Junction to Case** Rth(j-c)D Per FWDi — — 0.12 °C/W Contact Thermal Resistance** Rth(c-f) Thermal Grease Applied — 0.015 — °C/W Internal Gate Resistance RGint TC = 25°C 2.1 3.0 3.9 Ω TC = 125°C 4.2 6.0 7.8 Ω External Gate Resistance RG 1.0 — 10 Ω Test Conditions Min. Typ. Max. Units NTC Thermistor Sector, Tj = 25°C unless otherwise specified Characteristics Symbol Zero Power Resistance R TC = 25°C 4.85 5.00 5.15 kΩ Deviation of Resistance ∆R/R TC = 100°C, R100 = 493Ω –7.3 — +7.8 % B(25/50) B(25/50) = In(R25 / R50) / (1/T25 – 1/T50)*** — 3375 — K P25 TC = 25°C — — 10 mW B Constant Power Dissipation *Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi). **TC, Tf measured point is just under the chips. ***R25: Resistance at Absolute Temperature T25(K), R50: Resistance at Absolute Temperature T50(K), T25 = 25(°C) +273.15 = 298.15(K), T50 = 50(°C) + 273.15 = 323.15(K) Rev. 11/08 3 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 CM300DX-24A Dual IGBTMOD™ NX-Series Module 300 Amperes/1200 Volts COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (INVERTER PART - TYPICAL) 600 13 COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) VGE = 20V 12 300 11 200 100 10 9 0 2 4 6 8 200 300 400 500 IC = 600A 6 IC = 300A 4 IC = 120A 2 0 600 6 8 10 12 14 16 18 GATE-EMITTER VOLTAGE, VGE, (VOLTS) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (INVERTER PART - TYPICAL) CAPACITANCE VS. VCE (INVERTER PART - TYPICAL) HALF-BRIDGE SWITCHING CHARACTERISTICS (INVERTER PART - TYPICAL) 103 CAPACITANCE, Cies, Coes, Cres, (nF) Tj = 25°C Tj = 125°C 102 0 1 2 3 103 VGE = 0V tf Cies Coes 101 100 102 tr 101 VCC = 600V VGE = ±15V RG = 1.0Ω Tj = 125°C Inductive Load Cres 100 101 102 100 101 102 103 EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS) COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) COLLECTOR CURRENT, IC, (AMPERES) SWITCHING TIME VS. GATE RESISTANCE (INVERTER PART - TYPICAL) REVERSE RECOVERY CHARACTERISTICS (INVERTER PART - TYPICAL) GATE CHARGE VS. VGE (INVERTER PART) td(on) 103 td(off) tr 102 101 10-1 VCC = 600V VGE = ±15V IC = 300A Tj = 125°C Inductive Load 100 GATE RESISTANCE, RG, (Ω) 101 20 td(off) td(on) 102 10-1 10-1 4 REVERSE RECOVERY, Irr (A), trr (ns) EMITTER CURRENT, IE, (AMPERES) 100 0 8 COLLECTOR-CURRENT, IC, (AMPERES) tf SWITCHING TIME, (ns) 1 Tj = 25°C COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) 103 4 2 0 10 103 101 3 SWITCHING TIME, (ns) 0 10 VGE = 15V Tj = 25°C Tj = 125°C 20 102 VCC = 600V VGE = ±15V RG = 1.0Ω Tj = 25°C Inductive Load Irr trr 101 100 101 102 EMITTER CURRENT, IE, (AMPERES) 103 GATE-EMITTER VOLTAGE, VGE, (VOLTS) COLLECTOR CURRENT, IC, (AMPERES) 500 400 4 Tj = 25°C 15 COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (INVERTER PART - TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) OUTPUT CHARACTERISTICS (INVERTER PART - TYPICAL) IC = 300A 16 VCC = 400V VCC = 600V 12 8 4 0 0 500 1000 1500 2000 GATE CHARGE, QG, (nC) Rev. 11/08 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 CM300DX-24A Dual IGBTMOD™ NX-Series Module 300 Amperes/1200 Volts VCC = 600V VGE = ±15V RG = 1.0Ω Tj = 125°C Inductive Load Eon Eoff 100 101 102 103 102 VCC = 600V VGE = ±15V IC = 300A Tj = 125°C Inductive Load Eon Eoff 101 100 100 101 REVERSE RECOVERY SWITCHING LOSS, Err, (mJ/PULSE) VCC = 600V VGE = ±15V IE = 300A Tj = 125°C Inductive Load 100 100 100 10-1 10-2 Err 101 GATE RESISTANCE, RG, (Ω) Rev. 11/08 NORMALIZED TRANSIENT THERMAL IMPEDANCE, Zth(j-c') Zth = Rth • (NORMALIZED VALUE) REVERSE RECOVERY SWITCHING LOSS VS. GATE RESISTANCE (INVERTER PART - TYPICAL) 101 102 102 10-3 10-3 TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (INVERTER PART - TYPICAL) 10-2 10-1 100 VCC = 600V VGE = ±15V RG = 1.0Ω Tj = 125°C Inductive Load 101 100 101 Err 102 103 EMITTER CURRENT, IE, (AMPERES) GATE RESISTANCE, RG, (Ω) COLLECTOR CURRENT, IC, (AMPERES) 102 REVERSE RECOVERY SWITCHING LOSS, Err, (mJ/PULSE) 101 SWITCHING LOSS, Eon, Eoff, (mJ/PULSE) SWITCHING LOSS, Eon, Eoff, (mJ/PULSE) 102 103 102 103 REVERSE RECOVERY SWITCHING LOSS VS. EMITTER CURRENT (INVERTER PART - TYPICAL) SWITCHING LOSS VS. GATE RESISTANCE (INVERTER PART - TYPICAL) SWITCHING LOSS VS. COLLECTOR CURRENT (INVERTER PART - TYPICAL) 101 10-1 Single Pulse TC = 25°C Per Unit Base = Rth(j-c) = 0.066°C/W (IGBT) Rth(j-c) = 0.12°C/W (FWDi) 10-2 10-5 10-4 10-3 10-3 TIME, (s) 5