CM75DY-34A Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com Dual IGBTMOD™ A-Series Module 75 Amperes/1700 Volts A F F E E G2 G E2 B J N C2E1 E2 C1 H E1 G G1 K K L (2 PLACES) K P P Q Description: Powerex IGBTMOD™ Modules are designed for use in switching applications. Each module consists of two IGBT Transistors in a half-bridge configuration with each transistor having a reverseconnected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management. M NUTS (3 PLACES) D Q T THICK U WIDTH P S C V LABEL R G2 E2 C2E1 E2 Features: £ Low Drive Power £ Low VCE(sat) £ Discrete Super-Fast Recovery Free-Wheel Diode £ Isolated Baseplate for Easy Heat Sinking C1 E1 G1 Outline Drawing and Circuit Diagram Dimensions A B C Dimensions Inches Millimeters 3.70 94.0 48.0 1.89 1.14+0.04/-0.02 29.0+1.0/-0.5 Inches Millimeters L 0.26 Dia. Dia. 6.5 M M5 Metric M5 N 0.79 20.0 P 0.63 16.0 D 3.15±0.01 80.0±0.25 E 0.67 17.0 Q 0.28 7.0 R 0.83 21.2 F 0.91 23.0 G 0.16 4.0 S 0.30 7.5 T 0.02 0.5 H 0.71 18.0 J 0.51 13.0 U 0.110 2.8 12.0 V 0.16 4.0 K 01/10 Rev. 1 0.47 Applications: £ AC Motor Control £ UPS £ Battery Powered Supplies Ordering Information: Example: Select the complete part module number you desire from the table below -i.e. CM75DY-34A is a 1700V (VCES), 75 Ampere Dual IGBTMOD™ Power Module. Type Current Rating Amperes VCES Volts (x 50) CM 75 34 1 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com CM75DY-34A Dual IGBTMOD™ A-Series Module 75 Amperes/1700 Volts Absolute Maximum Ratings, Tj = 25°C unless otherwise specified Ratings Symbol CM75DY-34A Units Tj –40 to 150 °C Junction Temperature Storage Temperature Tstg –40 to 125 °C Collector-Emitter Voltage (G-E Short) VCES 1700 Volts Gate-Emitter Voltage (C-E Short) VGES ±20 Volts IC 75 Amperes Collector Current (DC, TC = 111°C)*4 Peak Collector Current (Pulse, Repetitive)*2 ICM 150 Amperes Maximum Collector Dissipation (TC = 25°C, Tj ≤ 150°C)*2,*4 PC 780 Watts 2 1 Emitter Current (TC = 25°C)* I E* 75 Amperes IEM*1 150 Amperes Mounting Torque, M5 Main Terminal — 30 in-lb Mounting Torque, M6 Mounting — 40 in-lb — 310 Grams VISO 3500 Volts Peak Emitter Current (Pulse, Repetitive)*2 Weight Isolation Voltage (Main Terminal to Baseplate, f = 60Hz, AC 1 min.) Static Electrical Characteristics, Tj = 25°C unless otherwise specified Characteristics Collector-Cutoff Current Gate Leakage Current Symbol Test Conditions Min. Typ. Max. Units ICES VCE = VCES, VGE = 0V — — 1.0 mA IGES VGE = VGES, VCE = 0V — — 2.0 µA Gate-Emitter Threshold Voltage VGE(th) IC = 7.5mA, VCE = 10V 5.5 7.0 8.5 Volts Collector-Emitter Saturation Voltage VCE(sat) IC = 75A, VGE = 15V, Tj = 25°C*3 — 2.2 2.8 Volts IC = 75A, VGE = 15V, Tj = 125°C*3 — 2.45 — Volts QG VCC = 1000V, IC = 75A, VGE = 15V — 500 — nC VEC*1 IE = 75A, VGE = 0V*3 — — 3.0 Volts Min. Typ. Max. Units — — 18.5 nf — — 2.1 nf — — 0.4 nf Total Gate Charge Emitter-Collector Voltage Dynamic Electrical Characteristics, Tj = 25°C unless otherwise specified Characteristics Cies Output Capacitance Coes Reverse Transfer Capacitance Cres Inductive Turn-on Delay Time td(on) Load Rise Time Switch Turn-off Delay Time Time Fall Time Test Conditions VCE = 10V, VGE = 0V — — 200 ns tr VCC = 1000V, IC = 75A, — — 150 ns td(off) VGE1 = VGE2 = 15V, RG = 6.4Ω, — — 550 ns tf Inductive Load — — 350 ns 1 Diode Reverse Recovery Time trr* Switching Operation, — — 300 ns Diode Reverse Recovery Charge Qrr*1 IE = 75A — 7.5 — µC *1 *2 *3 *4 2 Symbol Input Capacitance Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi). Pulse width and repetition rate should be such that device junction temperature (Tj) does not exceed Tj(max) rating. Pulse width and repetition rate should be such as to cause negligible temperature rise. Case temperature (TC), and heatsink temperature (Tf) measured point is just under the chips. 01/10 Rev. 1 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com CM75DY-34A Dual IGBTMOD™ A-Series Module 75 Amperes/1700 Volts Thermal and Mechanical Characteristics, Tj = 25°C unless otherwise specified Characteristics Symbol Test Conditions Min. 4 Typ. Max. Units Thermal Resistance, Junction to Case Rth(j-c)Q Per IGBT 1/2 Module* — — 0.16 °C/W Thermal Resistance, Junction to Case Rth(j-c)D Per FWDi 1/2 Module*4 — — 0.29 °C/W Rth(c-f) Thermal Grease Applied*4,*5 Contact Thermal Resistance External Gate Resistance RG — — — °C/W 6.4 — 64 Ω *4 Case temperature (TC), and heatsink temperature (Tf) measured point is just under the chips. *5 Typical value is measured by using thermally conductive grease of λ = 0.9 [W/(m • K)]. COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) 5 13 12 COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) VGE = 20V Tj = 25oC 15 100 11 50 10 8 0 0 4 6 8 4 3 2 1 0 10 150 VCE = 15V Tj = 25°C Tj = 125°C 50 0 100 100 50 0 150 VGE = 10V Tj = 25°C Tj = 125°C 0 4 8 12 16 COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) COLLECTOR-CURRENT, IC, (AMPERES) GATE-EMITTER VOLTAGE, VGE, (VOLTS) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) CAPACITANCE VS. VCE (TYPICAL) 103 10 IC = 150A 8 IC = 75A 6 IC = 30A 4 2 0 102 Tj = 25°C 0 4 8 12 16 GATE-EMITTER VOLTAGE, VGE, (VOLTS) 01/10 Rev. 1 20 CAPACITANCE, Cies, Coes, Cres, (nF) COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) 2 9 EMITTER CURRENT, IE, (AMPERES) COLLECTOR CURRENT, IC, (AMPERES) 150 TRANSFER CHARACTERISTICS (TYPICAL) COLLECTOR-CURRENT, IC, (AMPERES) OUTPUT CHARACTERISTICS (TYPICAL) 102 101 Tj = 25°C Tj = 125°C 100 0 1 2 3 EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS) 4 20 VGE = 0V Cies 101 100 Coes Cres 10-1 10-2 10-1 100 101 102 COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) 3 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com CM75DY-34A Dual IGBTMOD™ A-Series Module 75 Amperes/1700 Volts SWITCHING TIME VS. COLLECTOR CURRENT (TYPICAL) tr 103 101 td(off) 102 td(on) VCC = 1000V VGE = 15V IC = 75A Tj = 125°C Inductive Load tr 101 100 102 101 SWITCHING LOSS VS. GATE RESISTANCE (TYPICAL) REVERSE RECOVERY CHARACTERISTICS (TYPICAL) VCC = 1000V VGE = 15V IC = 75A Tj = 125°C Inductive Load Eon Eoff 101 100 101 102 VCC = 1000V VGE = 15V RG = 6.4Ω Tj = 25°C Inductive Load 102 102 Irr trr NORMALIZED TRANSIENT THERMAL IMPEDANCE, Zth(j-c') Zth = Rth • (NORMALIZED VALUE) GATE RESISTANCE, RG, (Ω) 10-1 10-2 10-3 10-3 TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT & FWDi) 10-2 10-1 100 101 100 101 EMITTER CURRENT, IC, (AMPERES) Err Eoff Eon 101 102 GATE CHARGE VS. VGE 103 Err 101 COLLECTOR CURRENT, IC, (AMPERES) GATE RESISTANCE, RG, (Ω) 103 VCC = 1000V VGE = 15V RG = 6.4Ω Tj = 125°C Inductive Load 100 100 102 COLLECTOR CURRENT, IC, (AMPERES) 102 100 SWITCHING LOSS, Eon, Eoff, Err, (mJ/PULSE) 101 tf 101 102 20 GATE-EMITTER VOLTAGE, VGE, (VOLTS) td(on) 100 100 SWITCHING LOSS, Eon, Eoff, Err, (mJ/PULSE) td(off) REVERSE RECOVERY CURRENT, Irr, (AMPERES) 102 102 103 tf SWITCHING TIME, td(on), tr, td(off), tf, (ns) VCC = 1000V VGE = 15V RG = 6.4Ω Tj = 125°C Inductive Load REVERSE RECOVERY TIME, trr, (ns) SWITCHING TIME, td(on), tr, td(off), tf, (ns) 103 SWITCHING LOSS VS. COLLECTOR CURRENT (TYPICAL) SWITCHING TIME VS. GATE RESISTANCE (TYPICAL) IC = 75A 16 VCC = 800V VCC = 1000V 12 8 4 0 0 200 400 600 800 GATE CHARGE, QG, (nC) 101 10-1 Single Pulse TC = 25°C Per Unit Base = Rth(j-c) = 0.16°C/W (IGBT) Rth(j-c) = 0.29°C/W (FWDi) 10-2 10-5 10-4 10-3 10-3 TIME, (s) 4 01/10 Rev. 1