CM1400DUC-24S Mega Power Dual IGBT Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com 1400 Amperes/1200 Volts A D P (8 PLACES) U N G H H L S C2E1 C2 C1 G2 E1 E2 G1 W X J K F BB Y C B Z CC F J E2 C1 U V H H H H H H G G C2E1 G2 Tr1 Di2 E2 (Es2) E2 T E1 (Es1) Di1 C1 L R (9 PLACES) C1 (Cs1) Tr2 AA M LABEL C2 (Cs2) E Tolerance Otherwise Specified (mm) Division of Dimension Tolerance 0.5 to 3 ±0.2 over 3 to 6 ±0.3 over 6 to 30 ±0.5 over 30 to 120 ±0.8 over 120 to 400 ±1.2 G1 Outline Drawing and Circuit Diagram Dimensions Inches A 5.91 Millimeters Dimensions Inches Millimeters 150.0 M 0.075±0.008 1.9±0.2 B 5.10 129.5 N 0.47 12.0 C 1.67±0.01 42.5±0.25 P 0.26 6.5 D 5.41±0.01 137.5±0.25 R M6 Metric M6 E 6.54 166.0 S 0.08 2.0 F 2.91±0.01 74.0±0.25 T 0.99 25.1 G 1.65 42.0 U 0.62 15.7 Description: Powerex Mega Power Dual (MPD) Modules are designed for use in switching applications. Each module consists of two IGBT Transistors having a reverseconnected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management. Features: £ Low Drive Power £ Low VCE(sat) £ Discrete Super-Fast Recovery Free-Wheel Diode £ Isolated Baseplate for Easy Heatsinking £ RoHS Compliant Applications: £ High Power DC Power Supply £ Large DC Motor Drives £ Utility Interface Inverters Ordering Information: Example: Select the complete module number you desire from the table - i.e. CM1400DUC-24S is a 1200V (VCES), 1400 Ampere Dual IGBTMOD Power Module. H 0.55 14.0 V 0.71 18.0 J 1.50±0.01 38.0±0.25 W 0.75 19.0 0.16 4.0 X 0.43 11.0 Y 0.83 21.0 Z 0.41 10.5 Type Current Rating Amperes VCES Volts (x 50) AA 0.22 5.5 CM 1400 24 K L 1.36 +0.04/-0.02 34.6 +1.0/-0.5 Housing Type (J.S.T. MFG. CO. LTD) BB = VHR-2N CC = VHR-5N 09/12 Rev. 0 1 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com CM1400DUC-24S Mega Power Dual IGBT 1400 Amperes/1200 Volts Absolute Maximum Ratings, Tj = 25°C unless otherwise specified Characteristics SymbolRatingUnits Collector-Emitter Voltage (VGE = 0V) VCES 1200Volts Gate-Emitter Voltage (VCE = 0V) VGES ±20Volts Collector Current (DC, TC = 124°C)*2,*4IC Collector Current (Pulse, Repetitive)*3I 1400Amperes CRM 2800Amperes Total Power Dissipation (TC = 25°C)*2,*4Ptot 9370Watts Emitter Current*2 Emitter Current (Pulse, Repetitive)*3 Isolation Voltage (Terminals to Baseplate, RMS, f = 60Hz, AC 1 minute) IE*1 1400Amperes IERM*1 2800Amperes Visol 4000Volts Maximum Junction Temperature Tj(max)175 °C Maximum Case Temperature*4TC (max)125 °C Tstg -40 to +125 °C 111.8 °C 98.9 -40 to +150 51.0 *1 Represent ratings and characteristics of the anti-parallel, emitter-to-collector clamp diode. *2 Junction temperature (Tj) should not increase beyond maximum junction temperature (Tj(max)) rating. *3 Pulse width and repetition rate should be such that device junction temperature (Tj) does not exceed Tj(max) rating. *4 Case temperature (TC) and heatsink temperature (Ts) is measured on the surface (mounting side) of the baseplate and the heatsink side just under the chips. Refer to the figure to the right for chip location. The heatsink thermal resistance should be measured just under the chips. 0 Storage Temperature Tj(op) 38.2 Operating Junction Temperature 116.0 Tr2 Di2 Di1 Tr1 96.4 Tr2 Di2 Di1 Tr1 74.5 Tr2 Di2 Di1 Tr1 54.9 Tr2 Di2 Di1 Tr1 33.0 Tr2 Di2 Di1 Tr1 13.4 Tr2 Di2 Di1 Tr1 0 LABEL SIDE Tr1, Tr2: IGBT, Di1, Di2: FWDi Each mark points to the center position of each chip. 2 09/12 Rev. 0 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com CM1400DUC-24S Mega Power Dual IGBT 1400 Amperes/1200 Volts Electrical Characteristics, Tj = 25°C unless otherwise specified Characteristics Collector-Emitter Cutoff Current Symbol ICES Test Conditions Min. Typ. Max. Units — — 1 mA VCE = VCES, VGE = 0V Gate-Emitter Leakage Current IGES VGE = VGES, VCE = 0V — — 3.0 µA Gate-Emitter Threshold Voltage VGE(th) IC = 140mA, VCE = 10V 5.4 6.0 6.6 Volts Collector-Emitter Saturation Voltage VCE(sat) IC = 1400A, VGE = 15V, Tj = 25°C*6 — 1.55 1.90 Volts (Terminal) IC = 1400A, VGE = 15V, Tj = 125°C*6 — 1.75 — Volts IC = 1400A, VGE = 15V, Tj = 150°C*6 — 1.80 — Volts IC = 1400A, VGE = 15V, Tj = 25°C*6 — 1.55 1.90 Volts 125°C*6 — 1.75 — Volts IC = 1400A, VGE = 15V, Tj = 150°C*6 — 1.80 — Volts — — 150 nF VCE = 10V, VGE = 0V — — 30 nF Collector-Emitter Saturation Voltage VCE(sat) (Chip) Input Capacitance Cies Output Capacitance Coes Reverse Transfer Capacitance Cres Gate Charge QG Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Emitter-Collector Voltage IC = 1400A, VGE = 15V, Tj = — — 2.5 nF VCC = 600V, IC = 1400A, VGE = 15V — 3500 — nC — — 900 ns tr VCC = 600V, IC = 1400A, VGE = ±15V, — — 250 ns td(off) RG = 0Ω, Inductive Load — — 950 ns — — 350 ns 25°C*6 — 1.65 2.10 Volts IE = 1400A, VGE = 0V, Tj = 125°C*6 — 1.65 — Volts 150°C*6 — 1.65 — Volts VEC*1 IE = 1400A, VGE = 0V, Tj = 25°C*6 — 1.65 2.10 Volts (Chip) IE = 1400A, VGE = 0V, Tj = 125°C*6 — 1.65 — Volts IE = 1400A, VGE = 0V, Tj = 150°C*6 — 1.65 — Volts td(on) tf *1 VEC (Terminal) IE = 1400A, VGE = 0V, Tj = IE = 1400A, VGE = 0V, Tj = Emitter-Collector Voltage *1 VCC = 600V, IE = 1400A, VGE = ±15V — — 450 ns RG = 0Ω, Inductive Load — 90 — µC VCC = 600V, IC = IE = 1400A, — 82.2 — mJ VGE = ±15V, RG = 0Ω, Tj = 150°C, — 260 — mJ — 122 — mJ — 0.286 — mΩ — 1.7 — Ω Reverse Recovery Time trr Reverse Recovery Charge Qrr*1 Turn-on Switching Energy per Pulse Eon Turn-off Switching Energy per Pulse Eoff Reverse Recovery Energy per Pulse Err*1 Inductive Load RCC' + EE' Main Terminals-Chip, Internal Lead Resistance 0 *1 Represent ratings and characteristics of the anti-parallel, emitter-to-collector clamp diode. *4 Case temperature (TC) and heatsink temperature (Ts) is measured on the surface (mounting side) of the baseplate and the heatsink side just under the chips. Refer to the figure to the right for chip location. The heatsink thermal resistance should be measured just under the chips. *6 Pulse width and repetition rate should be such as to cause negligible temperature rise. 98.9 Per Switch 51.0 rg 38.2 Internal Gate Resistance 111.8 Per Switch,TC = 25°C*4 116.0 Tr2 Di2 Di1 Tr1 96.4 Tr2 Di2 Di1 Tr1 74.5 Tr2 Di2 Di1 Tr1 54.9 Tr2 Di2 Di1 Tr1 33.0 Tr2 Di2 Di1 Tr1 13.4 Tr2 Di2 Di1 Tr1 0 LABEL SIDE 09/12 Rev. 0 Tr1, Tr2: IGBT, Di1, Di2: FWDi Each mark points to the center position of each chip. 3 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com CM1400DUC-24S Mega Power Dual IGBT 1400 Amperes/1200 Volts Electrical Characteristics, Tj = 25°C unless otherwise specified (continued) Thermal Resistance Characteristics Thermal Resistance, Junction to Case*4 Rth(j-c)Q Per Inverter IGBT — — 16 K/kW Thermal Resistance, Junction to Case*4 Rth(j-c)D Per Inverter Diode — — 26 K/kW Rth(c-f) Thermal Grease Applied — 6 — K/kW Case to Heatsink (Per 1 Module)*7 Contact Thermal Resistance, Mechanical Characteristics Mounting Torque Creepage Distance Mt Main Terminals, M6 Screw 22 27 31 in-lb Ms Mounting to Heatsink, M6 Screw 22 27 31 in-lb Terminal to Terminal 24 — — mm Terminal to Baseplate 33 — — mm ds Clearance da Weight m Flatness of Baseplate ec Terminal to Terminal 14 — — mm Terminal to Baseplate 33 — — mm — 1450 — Grams On Centerline X, Y*5 -50 — +100 µm Recommended Operating Conditons, Ta = 25°C 600 850 Volts 13.5 15.0 16.5 Volts External Gate Resistance RG Per Switch 0 — 2.2 Ω – CONCAVE + CONVEX 39 mm 39 mm Y1 Y2 X 0 *4 Case temperature (TC) and heatsink temperature (Ts) is measured on the surface (mounting side) of the baseplate and the heatsink side just under the chips. Refer to the figure to the right for chip location. The heatsink thermal resistance should be measured just under the chips. *5 Baseplate (mounting side) flatness measurement points (X, Y) are shown in the figure below. 111.8 — Applied Across G-Es 98.9 Applied Across P-N VGE(on) 51.0 VCC Gate-Emitter Drive Voltage 38.2 (DC) Supply Voltage 116.0 Tr2 Di2 Di1 Tr1 96.4 Tr2 Di2 Di1 Tr1 74.5 Tr2 Di2 Di1 Tr1 54.9 Tr2 Di2 Di1 Tr1 33.0 Tr2 Di2 Di1 Tr1 13.4 Tr2 Di2 Di1 Tr1 BOTTOM BOTTOM – CONCAVE LABEL SIDE BOTTOM + CONVEX *7 Typical value is measured by using thermally conductive grease of λ = 0.9 [W/(m • K)]. 0 LABEL SIDE Tr1, Tr2: IGBT, Di1, Di2: FWDi Each mark points to the center position of each chip. 4 09/12 Rev. 0 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com CM1400DUC-24S Mega Power Dual IGBT 1400 Amperes/1200 Volts COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (CHIP - TYPICAL) OUTPUT CHARACTERISTICS (CHIP - TYPICAL) 3.5 2500 15 13.5 12 2000 11 1500 100 10 500 9 0 2 4 6 8 1.5 1.0 0.5 IC = 2800A 6 IC = 1400A 4 IC = 560A 2 0 500 1000 1500 2000 2500 3000 0 6 8 10 12 14 16 18 GATE-EMITTER VOLTAGE, VGE, (VOLTS) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (CHIP - TYPICAL) CAPACITANCE VS. VCE (TYPICAL) HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) 104 102 VGE = 15V Tj = 25°C Tj = 125°C Tj = 150°C 0 0.5 1.0 1.5 2.0 2.5 Cies 102 Coes 101 Cres 100 VGE = 0V Tj = 25°C 10-1 10-1 3.0 SWITCHING TIME, (ns) 103 CAPACITANCE, Cies, Coes, Cres, (nF) 103 100 101 td(off) 103 td(on) tr tf 102 101 102 102 103 104 COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) COLLECTOR CURRENT, IC, (AMPERES) HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) SWITCHING TIME VS. GATE RESISTANCE (TYPICAL) SWITCHING TIME VS. GATE RESISTANCE (TYPICAL) td(off) 103 td(on) tr tf 102 101 102 103 COLLECTOR CURRENT, IC, (AMPERES) 09/12 Rev. 0 104 103 103 VCC = 600V VGE = ±15V tr td(on) td(off) tf 102 10-1 IC = 1400A Tj = 125°C Inductive Load 100 EXTERNAL GATE RESISTANCE, RG, (Ω) VCC = 600V VGE = ±15V tr td(on) SWITCHING TIME, (ns) VCC = 600V VGE = ±15V RG = 0Ω Tj = 150°C Inductive Load 101 20 VCC = 600V VGE = ±15V RG = 0Ω Tj = 125°C Inductive Load EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS) SWITCHING TIME, (ns) EMITTER CURRENT, IE, (AMPERES) 2.0 8 COLLECTOR CURRENT, IC, (AMPERES) 104 SWITCHING TIME, (ns) 2.5 Tj = 25°C COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) 104 101 3.0 0 10 10 VGE = 15V Tj = 25°C Tj = 125°C Tj = 150°C COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) Tj = 25°C VGE = 20V COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) COLLECTOR CURRENT, IC, (AMPERES) 3000 0 COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (CHIP - TYPICAL) td(off) tf 102 10-1 IC = 1400A Tj = 150°C Inductive Load 100 101 EXTERNAL GATE RESISTANCE, RG, (Ω) 5 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com CM1400DUC-24S Mega Power Dual IGBT 1400 Amperes/1200 Volts REVERSE RECOVERY CHARACTERISTICS (TYPICAL) REVERSE RECOVERY CHARACTERISTICS (TYPICAL) 103 103 10 5 1000 0 2000 3000 4000 EMITTER CURRENT, IE, (AMPERES) GATE CHARGE, QG, (nC) HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) VCC = 600V VGE = ±15V RG = 0Ω Tj = 125°C 101 Eon Eoff Err 103 104 102 VCC = 600V VGE = ±15V RG = 0Ω Tj = 150°C 101 Eon Eoff Err 101 102 103 103 100 10-1 102 10-2 Eon Eoff Err 100 GATE RESISTANCE, RG, (Ω) 104 101 10-3 10-3 TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (MAXIMUM) 10-2 10-1 100 102 VCC = 600V VGE = ±15V IC/IE = 1400A Tj = 125°C 101 10-1 Eon Eoff Err 100 101 GATE RESISTANCE, RG, (Ω) COLLECTOR CURRENT, IC, (AMPERES) EMITTER CURRENT, IE, (AMPERES) NORMALIZED TRANSIENT THERMAL IMPEDANCE, Zth(j-c') Zth = Rth • (NORMALIZED VALUE) COLLECTOR CURRENT, IC, (AMPERES) EMITTER CURRENT, IE, (AMPERES) VCC = 600V VGE = ±15V IC/IE = 1400A Tj = 150°C SWITCHING ENERGY, Eon, Eoff, (mJ) REVERSE RECIVERY ENERGY, Err, (mJ) SWITCHING ENERGY, Eon, Eoff, (mJ) REVERSE RECIVERY ENERGY, Err, (mJ) 102 5000 103 103 101 10-1 15 0 104 IC = 600A VCC = 1400V Tj = 25°C EMITTER CURRENT, IE, (AMPERES) 100 102 SWITCHING ENERGY, Eon, Eoff, (mJ) REVERSE RECIVERY ENERGY, Err, (mJ) GATE-EMITTER VOLTAGE, VGE, (VOLTS) VCC = 600V VGE = ±15V RG = 0Ω Tj = 150°C Inductive Load Irr trr 102 102 104 103 SWITCHING ENERGY, Eon, Eoff, (mJ) REVERSE RECIVERY ENERGY, Err, (mJ) 20 REVERSE RECOVERY, Irr (A), trr (ns) VCC = 600V VGE = ±15V RG = 0Ω Tj = 125°C Inductive Load Irr trr 102 102 6 GATE CHARGE VS. VGE 103 REVERSE RECOVERY, Irr (A), trr (ns) 103 101 10-1 Single Pulse TC = 25°C Per Unit Base = Rth(j-c) = 16 K/kW (IGBT) Rth(j-c) = 26 K/kW (FWDi) 10-2 10-5 10-4 10-3 10-3 TIME, (s) 09/12 Rev. 0