POWEREX CM1400DUC-24S

CM1400DUC-24S
Mega Power Dual IGBT
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272
www.pwrx.com
1400 Amperes/1200 Volts
A
D
P
(8 PLACES)
U
N
G
H H
L
S
C2E1
C2
C1
G2
E1
E2
G1
W
X J
K
F
BB
Y C B
Z
CC
F
J
E2
C1
U
V
H H H H H H
G
G
C2E1
G2
Tr1
Di2
E2 (Es2)
E2
T
E1 (Es1)
Di1
C1
L
R (9 PLACES)
C1 (Cs1)
Tr2
AA
M
LABEL
C2 (Cs2)
E
Tolerance Otherwise Specified (mm)
Division of Dimension Tolerance
0.5 to 3
±0.2
over
3 to 6
±0.3
over
6 to 30
±0.5
over 30 to 120
±0.8
over 120 to 400
±1.2
G1
Outline Drawing and Circuit Diagram
Dimensions
Inches
A
5.91
Millimeters
Dimensions
Inches
Millimeters
150.0
M
0.075±0.008
1.9±0.2
B
5.10
129.5
N
0.47
12.0
C
1.67±0.01
42.5±0.25
P
0.26
6.5
D
5.41±0.01
137.5±0.25
R
M6 Metric
M6
E
6.54
166.0
S
0.08
2.0
F
2.91±0.01
74.0±0.25
T
0.99
25.1
G
1.65
42.0
U
0.62
15.7
Description:
Powerex Mega Power Dual (MPD)
Modules are designed for use in
switching applications. Each
module consists of two IGBT
Transistors having a reverseconnected super-fast recovery
free-wheel diode. All components
and interconnects are isolated
from the heat sinking baseplate,
offering simplified system assembly
and thermal management.
Features:
£ Low Drive Power
£ Low VCE(sat)
£ Discrete Super-Fast Recovery
Free-Wheel Diode
£ Isolated Baseplate for Easy
Heatsinking
£ RoHS Compliant
Applications:
£ High Power DC Power Supply
£ Large DC Motor Drives
£ Utility Interface Inverters
Ordering Information:
Example: Select the complete
module number you desire from
the table - i.e. CM1400DUC-24S
is a 1200V (VCES), 1400 Ampere
Dual IGBTMOD Power
Module.
H
0.55
14.0
V
0.71
18.0
J
1.50±0.01
38.0±0.25
W
0.75
19.0
0.16
4.0
X
0.43
11.0
Y
0.83
21.0
Z
0.41
10.5
Type
Current Rating
Amperes
VCES
Volts (x 50)
AA
0.22
5.5
CM
1400
24
K
L
1.36 +0.04/-0.02 34.6 +1.0/-0.5
Housing Type (J.S.T. MFG. CO. LTD)
BB = VHR-2N
CC = VHR-5N
09/12 Rev. 0
1
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
CM1400DUC-24S
Mega Power Dual IGBT
1400 Amperes/1200 Volts
Absolute Maximum Ratings, Tj = 25°C unless otherwise specified
Characteristics
SymbolRatingUnits
Collector-Emitter Voltage (VGE = 0V)
VCES 1200Volts
Gate-Emitter Voltage (VCE = 0V)
VGES ±20Volts
Collector Current (DC, TC = 124°C)*2,*4IC
Collector Current (Pulse,
Repetitive)*3I
1400Amperes
CRM
2800Amperes
Total Power Dissipation (TC = 25°C)*2,*4Ptot 9370Watts
Emitter Current*2 Emitter Current (Pulse, Repetitive)*3 Isolation Voltage (Terminals to Baseplate, RMS, f = 60Hz, AC 1 minute)
IE*1
1400Amperes
IERM*1
2800Amperes
Visol 4000Volts
Maximum Junction Temperature
Tj(max)175 °C
Maximum Case Temperature*4TC (max)125 °C
Tstg
-40 to +125
°C
111.8
°C
98.9
-40 to +150
51.0
*1 Represent ratings and characteristics of the anti-parallel, emitter-to-collector clamp diode.
*2 Junction temperature (Tj) should not increase beyond maximum junction
temperature (Tj(max)) rating.
*3 Pulse width and repetition rate should be such that device junction temperature (Tj)
does not exceed Tj(max) rating.
*4 Case temperature (TC) and heatsink temperature (Ts) is measured on the surface
(mounting side) of the baseplate and the heatsink side just under the chips.
Refer to the figure to the right for chip location.
The heatsink thermal resistance should be measured just under the chips.
0
Storage Temperature
Tj(op)
38.2
Operating Junction Temperature
116.0
Tr2 Di2
Di1 Tr1
96.4
Tr2 Di2
Di1 Tr1
74.5
Tr2 Di2
Di1 Tr1
54.9
Tr2 Di2
Di1 Tr1
33.0
Tr2 Di2
Di1 Tr1
13.4
Tr2 Di2
Di1 Tr1
0
LABEL SIDE
Tr1, Tr2: IGBT, Di1, Di2: FWDi
Each mark points to the center position of each chip.
2
09/12 Rev. 0
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
CM1400DUC-24S
Mega Power Dual IGBT
1400 Amperes/1200 Volts
Electrical Characteristics, Tj = 25°C unless otherwise specified
Characteristics
Collector-Emitter Cutoff Current
Symbol
ICES
Test Conditions
Min.
Typ.
Max.
Units
—
—
1
mA
VCE = VCES, VGE = 0V
Gate-Emitter Leakage Current
IGES
VGE = VGES, VCE = 0V
—
—
3.0
µA
Gate-Emitter Threshold Voltage
VGE(th)
IC = 140mA, VCE = 10V
5.4
6.0
6.6
Volts
Collector-Emitter Saturation Voltage
VCE(sat)
IC = 1400A, VGE = 15V, Tj = 25°C*6
—
1.55
1.90
Volts
(Terminal)
IC = 1400A, VGE = 15V, Tj = 125°C*6
—
1.75
—
Volts
IC = 1400A, VGE = 15V, Tj = 150°C*6
—
1.80
—
Volts
IC = 1400A, VGE = 15V, Tj = 25°C*6
—
1.55
1.90
Volts
125°C*6
—
1.75
—
Volts
IC = 1400A, VGE = 15V, Tj = 150°C*6
—
1.80
—
Volts
—
—
150
nF
VCE = 10V, VGE = 0V
—
—
30
nF
Collector-Emitter Saturation Voltage
VCE(sat)
(Chip)
Input Capacitance
Cies
Output Capacitance
Coes
Reverse Transfer Capacitance
Cres
Gate Charge
QG
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Emitter-Collector Voltage
IC = 1400A, VGE = 15V, Tj =
—
—
2.5
nF
VCC = 600V, IC = 1400A, VGE = 15V
—
3500
—
nC
—
—
900
ns
tr
VCC = 600V, IC = 1400A, VGE = ±15V,
—
—
250
ns
td(off)
RG = 0Ω, Inductive Load
—
—
950
ns
—
—
350
ns
25°C*6
—
1.65
2.10
Volts
IE = 1400A, VGE = 0V, Tj = 125°C*6
—
1.65
—
Volts
150°C*6
—
1.65
—
Volts
VEC*1
IE = 1400A, VGE = 0V, Tj = 25°C*6
—
1.65
2.10
Volts
(Chip)
IE = 1400A, VGE = 0V, Tj = 125°C*6
—
1.65
—
Volts
IE = 1400A, VGE = 0V, Tj = 150°C*6
—
1.65
—
Volts
td(on)
tf
*1
VEC
(Terminal)
IE = 1400A, VGE = 0V, Tj =
IE = 1400A, VGE = 0V, Tj =
Emitter-Collector Voltage
*1
VCC = 600V, IE = 1400A, VGE = ±15V
—
—
450
ns
RG = 0Ω, Inductive Load
—
90
—
µC
VCC = 600V, IC = IE = 1400A,
—
82.2
—
mJ
VGE = ±15V, RG = 0Ω, Tj = 150°C,
—
260
—
mJ
—
122
—
mJ
—
0.286
—
mΩ
—
1.7
—
Ω
Reverse Recovery Time
trr
Reverse Recovery Charge
Qrr*1
Turn-on Switching Energy per Pulse
Eon
Turn-off Switching Energy per Pulse
Eoff
Reverse Recovery Energy per Pulse
Err*1
Inductive Load
RCC' + EE'
Main Terminals-Chip,
Internal Lead Resistance
0
*1 Represent ratings and characteristics of the anti-parallel, emitter-to-collector clamp diode.
*4 Case temperature (TC) and heatsink temperature (Ts) is measured on the surface
(mounting side) of the baseplate and the heatsink side just under the chips.
Refer to the figure to the right for chip location.
The heatsink thermal resistance should be measured just under the chips.
*6 Pulse width and repetition rate should be such as to cause negligible temperature rise.
98.9
Per Switch
51.0
rg
38.2
Internal Gate Resistance
111.8
Per Switch,TC = 25°C*4
116.0
Tr2 Di2
Di1 Tr1
96.4
Tr2 Di2
Di1 Tr1
74.5
Tr2 Di2
Di1 Tr1
54.9
Tr2 Di2
Di1 Tr1
33.0
Tr2 Di2
Di1 Tr1
13.4
Tr2 Di2
Di1 Tr1
0
LABEL SIDE
09/12 Rev. 0
Tr1, Tr2: IGBT, Di1, Di2: FWDi
Each mark points to the center position of each chip.
3
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
CM1400DUC-24S
Mega Power Dual IGBT
1400 Amperes/1200 Volts
Electrical Characteristics, Tj = 25°C unless otherwise specified (continued)
Thermal Resistance Characteristics
Thermal Resistance, Junction to Case*4
Rth(j-c)Q
Per Inverter IGBT
—
—
16
K/kW
Thermal Resistance, Junction to Case*4
Rth(j-c)D
Per Inverter Diode
—
—
26
K/kW
Rth(c-f)
Thermal Grease Applied
—
6
—
K/kW
Case to Heatsink
(Per 1 Module)*7
Contact Thermal Resistance,
Mechanical Characteristics
Mounting Torque
Creepage Distance
Mt
Main Terminals, M6 Screw
22
27
31
in-lb
Ms
Mounting to Heatsink, M6 Screw
22
27
31
in-lb
Terminal to Terminal
24
—
—
mm
Terminal to Baseplate
33
—
—
mm
ds
Clearance
da
Weight
m
Flatness of Baseplate
ec
Terminal to Terminal
14
—
—
mm
Terminal to Baseplate
33
—
—
mm
—
1450
—
Grams
On Centerline X, Y*5
-50
—
+100
µm
Recommended Operating Conditons, Ta = 25°C
600
850
Volts
13.5
15.0
16.5
Volts
External Gate Resistance
RG
Per Switch
0
—
2.2
Ω
– CONCAVE
+ CONVEX
39 mm
39 mm
Y1
Y2
X
0
*4 Case temperature (TC) and heatsink temperature (Ts) is measured on the surface
(mounting side) of the baseplate and the heatsink side just under the chips.
Refer to the figure to the right for chip location.
The heatsink thermal resistance should be measured just under the chips.
*5 Baseplate (mounting side) flatness measurement points (X, Y) are shown in the figure below.
111.8
—
Applied Across G-Es
98.9
Applied Across P-N
VGE(on)
51.0
VCC
Gate-Emitter Drive Voltage
38.2
(DC) Supply Voltage
116.0
Tr2 Di2
Di1 Tr1
96.4
Tr2 Di2
Di1 Tr1
74.5
Tr2 Di2
Di1 Tr1
54.9
Tr2 Di2
Di1 Tr1
33.0
Tr2 Di2
Di1 Tr1
13.4
Tr2 Di2
Di1 Tr1
BOTTOM
BOTTOM
– CONCAVE
LABEL SIDE
BOTTOM
+ CONVEX
*7 Typical value is measured by using thermally conductive grease of λ = 0.9 [W/(m • K)].
0
LABEL SIDE
Tr1, Tr2: IGBT, Di1, Di2: FWDi
Each mark points to the center position of each chip.
4
09/12 Rev. 0
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
CM1400DUC-24S
Mega Power Dual IGBT
1400 Amperes/1200 Volts
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(CHIP - TYPICAL)
OUTPUT CHARACTERISTICS
(CHIP - TYPICAL)
3.5
2500
15
13.5
12
2000
11
1500
100
10
500
9
0
2
4
6
8
1.5
1.0
0.5
IC = 2800A
6
IC = 1400A
4
IC = 560A
2
0
500 1000 1500 2000 2500 3000
0
6
8
10
12
14
16
18
GATE-EMITTER VOLTAGE, VGE, (VOLTS)
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(CHIP - TYPICAL)
CAPACITANCE VS. VCE
(TYPICAL)
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
104
102
VGE = 15V
Tj = 25°C
Tj = 125°C
Tj = 150°C
0
0.5
1.0
1.5
2.0
2.5
Cies
102
Coes
101
Cres
100
VGE = 0V
Tj = 25°C
10-1
10-1
3.0
SWITCHING TIME, (ns)
103
CAPACITANCE, Cies, Coes, Cres, (nF)
103
100
101
td(off)
103
td(on)
tr
tf
102
101
102
102
103
104
COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)
COLLECTOR CURRENT, IC, (AMPERES)
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
SWITCHING TIME VS.
GATE RESISTANCE
(TYPICAL)
SWITCHING TIME VS.
GATE RESISTANCE
(TYPICAL)
td(off)
103
td(on)
tr
tf
102
101
102
103
COLLECTOR CURRENT, IC, (AMPERES)
09/12 Rev. 0
104
103
103
VCC = 600V
VGE = ±15V
tr
td(on)
td(off)
tf
102
10-1
IC = 1400A
Tj = 125°C
Inductive Load
100
EXTERNAL GATE RESISTANCE, RG, (Ω)
VCC = 600V
VGE = ±15V
tr
td(on)
SWITCHING TIME, (ns)
VCC = 600V
VGE = ±15V
RG = 0Ω
Tj = 150°C
Inductive Load
101
20
VCC = 600V
VGE = ±15V
RG = 0Ω
Tj = 125°C
Inductive Load
EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS)
SWITCHING TIME, (ns)
EMITTER CURRENT, IE, (AMPERES)
2.0
8
COLLECTOR CURRENT, IC, (AMPERES)
104
SWITCHING TIME, (ns)
2.5
Tj = 25°C
COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)
104
101
3.0
0
10
10
VGE = 15V
Tj = 25°C
Tj = 125°C
Tj = 150°C
COLLECTOR-EMITTER
SATURATION VOLTAGE, VCE(sat), (VOLTS)
Tj = 25°C
VGE = 20V
COLLECTOR-EMITTER
SATURATION VOLTAGE, VCE(sat), (VOLTS)
COLLECTOR CURRENT, IC, (AMPERES)
3000
0
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(CHIP - TYPICAL)
td(off)
tf
102
10-1
IC = 1400A
Tj = 150°C
Inductive Load
100
101
EXTERNAL GATE RESISTANCE, RG, (Ω)
5
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
CM1400DUC-24S
Mega Power Dual IGBT
1400 Amperes/1200 Volts
REVERSE RECOVERY CHARACTERISTICS
(TYPICAL)
REVERSE RECOVERY CHARACTERISTICS
(TYPICAL)
103
103
10
5
1000
0
2000
3000
4000
EMITTER CURRENT, IE, (AMPERES)
GATE CHARGE, QG, (nC)
HALF-BRIDGE SWITCHING
CHARACTERISTICS (TYPICAL)
HALF-BRIDGE SWITCHING
CHARACTERISTICS (TYPICAL)
HALF-BRIDGE SWITCHING
CHARACTERISTICS (TYPICAL)
VCC = 600V
VGE = ±15V
RG = 0Ω
Tj = 125°C
101
Eon
Eoff
Err
103
104
102
VCC = 600V
VGE = ±15V
RG = 0Ω
Tj = 150°C
101
Eon
Eoff
Err
101
102
103
103
100
10-1
102
10-2
Eon
Eoff
Err
100
GATE RESISTANCE, RG, (Ω)
104
101
10-3
10-3
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(MAXIMUM)
10-2
10-1
100
102
VCC = 600V
VGE = ±15V
IC/IE = 1400A
Tj = 125°C
101
10-1
Eon
Eoff
Err
100
101
GATE RESISTANCE, RG, (Ω)
COLLECTOR CURRENT, IC, (AMPERES)
EMITTER CURRENT, IE, (AMPERES)
NORMALIZED TRANSIENT THERMAL IMPEDANCE, Zth(j-c')
Zth = Rth • (NORMALIZED VALUE)
COLLECTOR CURRENT, IC, (AMPERES)
EMITTER CURRENT, IE, (AMPERES)
VCC = 600V
VGE = ±15V
IC/IE = 1400A
Tj = 150°C
SWITCHING ENERGY, Eon, Eoff, (mJ)
REVERSE RECIVERY ENERGY, Err, (mJ)
SWITCHING ENERGY, Eon, Eoff, (mJ)
REVERSE RECIVERY ENERGY, Err, (mJ)
102
5000
103
103
101
10-1
15
0
104
IC = 600A
VCC = 1400V
Tj = 25°C
EMITTER CURRENT, IE, (AMPERES)
100
102
SWITCHING ENERGY, Eon, Eoff, (mJ)
REVERSE RECIVERY ENERGY, Err, (mJ)
GATE-EMITTER VOLTAGE, VGE, (VOLTS)
VCC = 600V
VGE = ±15V
RG = 0Ω
Tj = 150°C
Inductive Load
Irr
trr
102
102
104
103
SWITCHING ENERGY, Eon, Eoff, (mJ)
REVERSE RECIVERY ENERGY, Err, (mJ)
20
REVERSE RECOVERY, Irr (A), trr (ns)
VCC = 600V
VGE = ±15V
RG = 0Ω
Tj = 125°C
Inductive Load
Irr
trr
102
102
6
GATE CHARGE VS. VGE
103
REVERSE RECOVERY, Irr (A), trr (ns)
103
101
10-1
Single Pulse
TC = 25°C
Per Unit Base =
Rth(j-c) =
16 K/kW
(IGBT)
Rth(j-c) =
26 K/kW
(FWDi)
10-2
10-5
10-4
10-3
10-3
TIME, (s)
09/12 Rev. 0