CM100MX-12A NX-Series CIB Module Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com (3Ø Converter + 3Ø Inverter + Brake) 100 Amperes/600 Volts AJ AK AG A K E AH F G J L K M K M K K AA AB C K L K K K DETAIL "A" Z 53 52 51 50 49 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 X W 54 Y 30 K 55 29 K28 V 56 57 V 59 60 S R 26 K K 61 Q 27 L 58 K B P 25 24 23 DETAIL "B" 1 2 3 4 5 6 7 8 M AN 9 10 11 12 13 14 15 16 17 18 19 20 21 22 Y K T L K L K L K L K L K AF X AC AP AM N (4 PLACES) U H AD AL AE D DETAIL "A" P(52-53) DETAIL "B" ClampDi B(24-25) R S T (1-2) (5-6) (9-10) FWDi GUP(49) ESUP(48) GVP(44) ESVP(43) GWP(39) ESWP(38) U(13-14) V(17-18) W(21-22) GUN(34) GVN(33) GWN(32) GB(35) ConvDi N(57-58) TH1 (28) TH2 (29) P1(54-55) N1(60-61) ES(31) Outline Drawing and Circuit Diagram Dimensions A B C D E F G H J K L M N P Q R S T U Rev. 11/11 Inches Millimeters 4.79 121.7 2.44 62.0 0.51 13.0 4.49 114.05 4.33±0.02 110.0±0.5 3.89 99.0 3.72 94.5 0.16 4.06 0.51 13.09 0.15 3.81 0.45 11.43 0.6 15.24 0.22 Dia. 5.5 Dia. 2.13 54.2 1.53 39.0 1.97±0.02 50.0±0.5 2.26 57.5 0.30 7.75 0.59 15.0 Dimensions V W X Y Z AA AB AC AD AE AF AG AH AJ AK AL AM AN AP Inches 0.3 0.46 0.16 0.08 Dia. 0.27 0.81 0.67 0.12 0.14 0.03 0.15 0.05 0.025 0.29 0.047 0.49 0.06 0.17 Dia. 0.10 Dia. Millimeters 7.62 11.66 4.2 2.1 Dia. 7.0 20.5 17.0 3.0 3.5 0.8 3.75 1.15 0.65 7.4 1.2 12.5 1.5 4.3 Dia. 2.5 Dia. Description: CIBs are low profile and thermally efficient. Each module consists of a three-phase diode converter section, a three-phase inverter section and a brake circuit. A thermistor is included in the package for sensing the baseplate temperature. 5th Generation CSTBT chips yield low loss. Features: £ Low Drive Power £ Low VCE(sat) £ Discrete Super-Fast Recovery Free-Wheel Diode £ Isolated Baseplate for Easy Heat Sinking Applications: £ AC Motor Control £ Motion/Servo Control £ Photovoltaic/Fuel Cell Ordering Information: Example: Select the complete module number you desire from the table below -i.e. CM100MX-12A is a 600V (VCES), 100 Ampere CIB Power Module. Type Current Rating Amperes VCES Volts (x 50) CM100 12 1 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com CM100MX-12A NX-Series CIB Module (3Ø Converter + 3Ø Inverter + Brake) 100 Amperes/600 Volts Absolute Maximum Ratings, Tj = 25°C unless otherwise specified Characteristics SymbolCM100MX-12AUnits Inverter Part IGBT/FWDi Collector-Emitter Voltage (G-E Short) VCES 600Volts Gate-Emitter Voltage (C-E Short) VGES ±20Volts Collector Current (DC, TC = 75°C)*2,*4IC 100Amperes (Pulse)*3I 200Amperes Collector Current CRM Total Power Dissipation (TC = 25°C)*2,*4Ptot 400Watts Emitter Current*2 IE*1 10Amperes Emitter Current (Pulse)*3IERM*1 200Amperes Brake Part IGBT/ClampDi Collector-Emitter Voltage (G-E Short) VCES 600Volts Gate-Emitter Voltage (C-E Short) VGES ±20Volts Collector Current (DC, TC = 97°C)*2,*4IC 50Amperes Collector Current (Pulse)*3ICRM 100Amperes Total Power Dissipation (TC = 25°C)*2,*4Ptot 280Watts Repetitive Peak Reverse Voltage Forward Current (TC = VRRM 600Volts 25°C)*2I F 50Amperes Forward Current (Pulse)*3IFRM 100Amperes Converter Part ConvDi Repetitive Peak Reverse Voltage Recommended AC Input Voltage VRRM 800Volts Ea 220Volts DC Output Current (3-Phase Full Wave Rectifying, f = 60Hz,TC = 125°C)*2,*4IO 100Amperes Surge Forward Current (Sine Half-wave 1 Cycle Peak Value, f = 60Hz, Non-repetitive) 1000Amperes Current Square Time (Value for One Cycle of Surge Current) IFSM I2t 4160A2s Module Isolation Voltage (Charged Part to Baseplate, RMS, f = 60Hz, AC 1 min.) VISO 2500Volts Junction Temperature Tj -40 ~ +150 °C Storage Temperature Tstg -40 ~ +125 °C Chip Location (Top View) 91.7 98.9 102.3 79.3 84.6 41.2 NTC Thermistor 65.5 70.3 Converter Diode 51.6 FWDi 30.8 IGBT 0 *1 Represent ratings and characteristics of the anti-parallel, emitter-to-collector free wheeling diode (FWDi). *2 Junction temperature (Tj) should not increase beyond maximum junction temperature (Tj(max)) rating. *3 Pulse width and repetition rate should be such that device junction temperature (Tj) does not exceed Tj(max) rating. *4 Case temperature (TC) and heatsink temperature (Ts) is measured on the surface (mounting side) of the baseplate and the heatsink side just under the chips. Refer to the figure to the right for chip location. The heatsink thermal resistance should be measured just under the chips. 0 0 53 52 51 50 49 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 54 UP SN TN UP RN 60 3 4 5 6 36.8 2 25.3 0 1 SP 7 TP 8 UN UN WP VN WN VN WN 30 29 28 27 26 25 24 23 15.6 22.6 21.6 29.2 30.0 37.4 44.8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 101.0 102.3 RP 48.2 61 VP 86.7 91.6 59 43.2 Br Th WP Br 57 58 VP 78.7 56 65.4 72.4 55 26.8 25.8 29.8 Dimensions in mm (Tolerance: ±1mm) 2 Rev. 11/11 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com CM100MX-12A NX-Series CIB Module (3Ø Converter + 3Ø Inverter + Brake) 100 Amperes/600 Volts Electrical Characteristics, Tj = 25°C unless otherwise specified Inverter Part IGBT/FWDi Characteristics Symbol Test Conditions Min. Typ. Max. Units Collector Cutoff Current ICES VCE = VCES, VGE = 0V — — 1.0 mA Gate Leakage Current IGES VGE = VGES, VCE = 0V — — 0.5 µA Gate-Emitter Threshold Voltage VGE(th) IC = 10mA, VCE = 10V 5 6 7 Volts Collector-Emitter Saturation Voltage VCE(sat) Tj = 25°C, IC = 100A, VGE = 15V*5 — 1.7 2.1 Volts Tj = 125°C, IC = 100A, VGE = 15V*5 — 1.9 — Volts IC = 100A, VGE = 15V, Chip*5 — 1.6 — Volts Input Capacitance Cies Output Capacitance Coes Reverse Transfer Capacitance Cres Total Gate Charge QG — — 13.3 nF VCE = 10V, VGE = 0V — — 1.4 nF — — 0.45 nF VCC = 300V, IC = 100A, VGE = 15V — 270 — nC Inductive Turn-on Delay Time td(on) — — 100 ns Load Turn-on Rise Time tr VCC = 300V, IC = 100A, VGE = ±15V, — — 100 ns Switch Turn-off Delay Time td(off) RG = 6.2Ω, Inductive Load — — 300 ns Time Turn-off Fall Time — — 600 ns Emitter-Collector Voltage tf *1 VEC Tj = 25°C, IE = 100A, VGE = 0V*5 Tj = 125°C, IE = 100A, VGE = 0V*5 Reverse Recovery Time Reverse Recovery Charge trr*1 *1 Qrr Internal Gate Resistance rg External Gate Resistance RG — 2.0 2.8 Volts — 1.95 — Volts IE = 100A, VGE = 0V, Chip — 1.9 — Volts VCC = 300V, IE = 100A, VGE = ±15V — — 200 ns RG = 6.2Ω, Inductive Load — 3.6 — µC TC = 25°C, Per Switch — 0 — Ω 6.0 — 62 Ω *1 Represent ratings and characteristics of the anti-parallel, emitter-to-collector free wheeling diode (FWDi). *5 Pulse width and repetition rate should be such as to cause negligible temperature rise. Rev. 11/11 3 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com CM100MX-12A NX-Series CIB Module (3Ø Converter + 3Ø Inverter + Brake) 100 Amperes/600 Volts Electrical Characteristics, Tj = 25°C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Units Brake Part IGBT/ClampDi Collector Cutoff Current ICES VCE = VCES, VGE = 0V — — 1.0 mA Gate Leakage Current IGES VGE = VGES, VCE = 0V — — 0.5 µA Gate-Emitter Threshold Voltage VGE(th) IC = 5mA, VCE = 0V 5 6 7 Volts Collector-Emitter Saturation Voltage VCE(sat) Tj = 25°C, IC = 50A, VGE = 15V*5 — 1.7 2.1 Volts Input Capacitance Cies Output Capacitance Coes Reverse Transfer Capacitance Cres Total Gate Charge QG Internal Gate Resistance Repetitive Reverse Current Forward Voltage Drop Tj = 125°C, IC = 50A, VGE = 15V*5 — 1.9 — Volts IC = 50A, VGE = 15V, Chip — 1.6 — Volts — — 9.3 nF VCE = 10V, VGE = 0V — — 1.0 nF — — 0.3 nF — 200 — nC VCC = 300V, IC = 50A, VGE = 15V rg TC = 25°C — 0 — Ω IRRM VR = VRRM — — 1.0 mA VF Tj = 25°C, IF = 50A*5 — 2.0 2.8 Volts Tj = 125°C, IF = 50A*5 — 1.95 — Volts IF = 50A, Chip External Gate Resistance RG — 1.9 — Volts 13 — 125 Ω — — 20 mA — 1.2 1.6 Volts Converter Part Repetitive Peak Reverse Current Forward Voltage Drop IRRM VR = VRRM, Tj = 150°C 100A*5 VF IF = Zero Power Resistance R25 TC = 25°C*4 4.85 5.00 5.15 kΩ Deviation of Resistance ∆R/R R100 = 493Ω, TC = 100°C*4 -7.3 — +7.8 % — 3375 — K — — 10 mW NTC Thermistor Part 91.7 98.9 102.3 NTC Thermistor 79.3 84.6 Converter Diode 65.5 70.3 FWDi 51.6 IGBT 0 0 53 52 51 50 49 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 54 UP SN TN UP RN 59 60 61 RP 2 3 25.3 0 1 4 SP 5 6 7 TP 8 VP UN UN WP VN WN V N WN 30 29 28 27 26 25 24 23 15.6 22.6 21.6 29.2 30.0 37.4 44.8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 101.0 102.3 58 WP Br 57 43.2 VP Br Th 86.7 91.6 56 78.7 55 26.8 25.8 29.8 65.4 72.4 R25 1 1 *6 B(25/50) = In( )/( – ) R50 T25 T50 R25; Resistance at Absolute Temperature T25 [K]; T25 = 25 [°C] + 273.15 = 298.15 [K] R50; Resistance at Absolute Temperature T50 [K]; T50 = 50 [°C] + 273.15 = 323.15 [K] Chip Location (Top View) 41.2 *4 Case temperature (TC) and heatsink temperature (Ts) is measured on the surface (mounting side) of the baseplate and the heatsink side just under the chips. Refer to the figure to the right for chip location. The heatsink thermal resistance should be measured just under the chips. *5 Pulse width and repetition rate should be such as to cause negligible temperature rise. TC = 25°C*4 48.2 Approximate by P25 30.8 B(25/50) 36.8 Power Dissipation 0 B Constant Equation*6 Dimensions in mm (Tolerance: ±1mm) 4 Rev. 11/11 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com CM100MX-12A NX-Series CIB Module (3Ø Converter + 3Ø Inverter + Brake) 100 Amperes/600 Volts Thermal Resistance Characteristics, Tj = 25°C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Units Thermal Resistance, Junction to Case Rth(j-c)Q Per Inverter IGBT*4 — — 0.31 °C/W Thermal Resistance, Junction to Case Rth(j-c)D Per Inverter FWDi*4 — — 0.59 °C/W Thermal Resistance, Junction to Case Rth(j-c)Q Brake IGBT*4 — — 0.44 °C/W Brake ClampDi*4 Thermal Resistance, Junction to Case Rth(j-c)D — — 0.85 °C/W Thermal Resistance, Junction to Case Rth(j-c)D Per ConvDi*4 — — 0.24 °C/W Contact Thermal Resistance Rth(c-s) Case to Heatsink, Per 1 Module — 0.015 — °C/W Typ. Max. Thermal Grease Applied*4,*7 Mechanical Characteristics Test Conditions Min. Module Weight (Typical) Isolation Voltage, (Charged Part to Baseplate, RMS, f = 60Hz, AC 1 min.) 31 in-lb — 270 Grams VISO 2500Volts ±0 to +100 Flatness of Baseplate*8ec UP RN 60 RP 2 3 4 5 6 36.8 0 1 SP 7 TP 8 VP UN UN WP VN WN VN WN 30 29 28 27 26 25 24 23 15.6 22.6 21.6 29.2 30.0 37.4 44.8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 48.2 61 WP 101.0 102.3 58 VP Br Th Br 57 65.4 72.4 56 25.3 + : CONVEX HEATSINK SIDE – : CONCAVE UP SN TN 55 26.8 25.8 29.8 – : CONCAVE Rev. 11/11 91.7 98.9 102.3 0 53 52 51 50 49 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 43.2 + : CONVEX HEATSINK SIDE 79.3 84.6 41.2 0 59 X NTC Thermistor 65.5 70.3 Converter Diode 51.6 FWDi 30.8 IGBT 54 Y µm Chip Location (Top View) 0 *4 Case temperature (TC) and heatsink temperature (Ts) is measured on the surface (mounting side) of the baseplate and the heatsink side just under the chips. Refer to the figure to the right for chip location. The heatsink thermal resistance should be measured just under the chips. *7 Typical value is measured by using thermally conductive grease of λ = 0.9 [W/(m • K)]. *8 Baseplate (mounting side) flatness measurement points (X, Y) are shown in the figure below. Units — 86.7 91.6 Symbol Mounting Torque, M5 Mounting Screws 78.7 Characteristics Dimensions in mm (Tolerance: ±1mm) 5 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com CM100MX-12A NX-Series CIB Module (3Ø Converter + 3Ø Inverter + Brake) 100 Amperes/600 Volts COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (INVERTER PART - TYPICAL) 200 COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) 15 150 11 100 50 10 8 9 0 0 2 4 6 8 2.5 2.0 1.5 1.0 0.5 50 0 100 150 Tj = 25°C 8 IC = 200A 6 IC = 100A 4 IC = 40A 2 0 200 6 8 10 12 14 GATE-EMITTER VOLTAGE, VGE, (VOLTS) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (INVERTER PART - TYPICAL) CAPACITANCE VS. VCE (INVERTER PART - TYPICAL) HALF-BRIDGE SWITCHING CHARACTERISTICS (INVERTER PART - TYPICAL) CAPACITANCE, Cies, Coes, Cres, (nF) 102 0 1 2 3 Cies 101 Coes 100 Cres 10-1 10-2 10-1 4 103 102 tf td(off) td(on) tr VCC = 300V VGE = ±15V RG = 6.2Ω Tj = 125°C Inductive Load 101 101 102 100 101 102 103 COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) COLLECTOR CURRENT, IC, (AMPERES) SWITCHING TIME VS. GATE RESISTANCE (INVERTER PART - TYPICAL) REVERSE RECOVERY CHARACTERISTICS (INVERTER PART - TYPICAL) GATE CHARGE VS. VGE (INVERTER PART) tf tr td(off) td(on) 102 101 100 VCC = 300V VGE = ±15V IC = 100A Tj = 125°C Inductive Load 101 GATE RESISTANCE, RG, (Ω) 102 20 VCC = 300V VGE = ±15V RG = 6.2Ω Tj = 25°C Inductive Load GATE-EMITTER VOLTAGE, VGE, (VOLTS) 103 REVERSE RECOVERY, Irr (A), trr (ns) SWITCHING TIME, (ns) 100 EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS) 103 20 104 102 VGE = 0V 6 18 COLLECTOR-CURRENT, IC, (AMPERES) Tj = 25°C Tj = 125°C 101 16 COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) 103 EMITTER CURRENT, IE, (AMPERES) 3.0 0 10 10 VGE = 15V Tj = 25°C Tj = 125°C SWITCHING TIME, (ns) COLLECTOR CURRENT, IC, (AMPERES) 3.5 Tj = 25°C VGE = 20V 12 13 COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (INVERTER PART - TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) OUTPUT CHARACTERISTICS (INVERTER PART - TYPICAL) 102 101 101 Irr trr 102 EMITTER CURRENT, IE, (AMPERES) 103 IC = 100A 16 VCC = 200V VCC = 300V 12 8 4 0 0 100 200 300 400 GATE CHARGE, QG, (nC) Rev. 11/11 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com CM100MX-12A NX-Series CIB Module (3Ø Converter + 3Ø Inverter + Brake) 100 Amperes/600 Volts 102 100 10-1 100 103 101 Err 100 10-3 101 102 TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (INVERTER PART - TYPICAL) 10-2 10-1 10-3 100 10-2 10-5 10-4 COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (BRAKE PART - TYPICAL) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (BRAKE PART - TYPICAL) 102 3.0 2.5 2.0 1.5 1.0 0.5 0 10-3 10-3 0 25 50 75 COLLECTOR-CURRENT, IC, (AMPERES) Rev. 11/11 100 103 Tj = 25°C Tj = 125°C 102 101 100 10-1 101 10-2 Tj = 25°C Tj = 125°C 100 0 1 2 0 0.5 1.0 1.5 2.0 FORWARD VOLTAGE, VF, (VOLTS) TIME, (s) VGE = 15V Tj = 25°C Tj = 125°C 103 FREE-WHEEL DIODE FORWARD CHARACTERISTICS (CONVERTER PART - TYPICAL) 101 Rth(j-c) = 0.24°C/W (Converter Diode) GATE RESISTANCE, RG, (Ω) 3.5 102 EMITTER CURRENT, IE, (AMPERES) 10-1 Single Pulse TC = 25°C Per Unit Base = Rth(j-c) = 0.31°C/W (IGBT) Rth(j-c) = 0.59°C/W (FWDi) 10-2 10-1 100 COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) 100 10-1 FORWARD CURRENT, IF, (AMPERES) REVERSE RECOVERY SWITCHING LOSS, Err, (mJ/PULSE) VCC = 300V VGE = ±15V IE = 100A Tj = 125°C Inductive Load NORMALIZED TRANSIENT THERMAL IMPEDANCE, Zth(j-c') Zth = Rth • (NORMALIZED VALUE) REVERSE RECOVERY SWITCHING LOSS VS. GATE RESISTANCE (INVERTER PART - TYPICAL) 101 Err 100 GATE RESISTANCE, RG, (Ω) COLLECTOR CURRENT, IC, (AMPERES) 102 VCC = 300V VGE = ±15V RG = 6.2Ω Tj = 125°C Inductive Load 10-1 101 102 FORWARD CURRENT, IF, (AMPERES) 102 101 NORMALIZED TRANSIENT THERMAL IMPEDANCE, Zth(j-c') Zth = Rth • (NORMALIZED VALUE) 10-1 101 101 VCC = 300V VGE = ±15V IC = 100A Tj = 125°C Inductive Load Eon Eoff REVERSE RECOVERY SWITCHING LOSS, Err, (mJ/PULSE) VCC = 300V VGE = ±15V RG = 6.2Ω Tj = 125°C Inductive Load Eon Eoff SWITCHING LOSS, Eon, Eoff, (mJ/PULSE) SWITCHING LOSS, Eon, Eoff, (mJ/PULSE) 101 100 REVERSE RECOVERY SWITCHING LOSS VS. EMITTER CURRENT (INVERTER PART - TYPICAL) SWITCHING LOSS VS. GATE RESISTANCE (INVERTER PART - TYPICAL) SWITCHING LOSS VS. COLLECTOR CURRENT (INVERTER PART - TYPICAL) 3 FORWARD VOLTAGE, VF, (VOLTS) 4 10-3 10-3 TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (BRAKE PART - TYPICAL) 10-2 10-1 100 101 10-1 Single Pulse TC = 25°C Per Unit Base = Rth(j-c) = 0.44°C/W (IGBT) Rth(j-c) = 0.85°C/W (Clamp Diode) 10-2 10-5 10-4 10-3 10-3 TIME, (s) 7