POWEREX QID0640020

QID0640020
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272
www.pwrx.com
Dual IGBTMOD™
NX-Series Module
400 Amperes/600 Volts
A
D
E
J
F
J
G
Y
(4 PLACES)
AD
AE
AF
H
46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25
Q
ST
47
U
24
Z
R
S T
Q
48
U
AA B
AB
23
DETAIL "B"
1
W
V
X
M
L
2
3
4
5
6
7
8
N
K
AG
9 10 11 12 13 14 15 16 17 18 19 20 21 22
P
K
L
DETAIL "A"
AL
AM
AK
AT
AU
E1C2(24) E1C2(23)
Tr2
Di2
Di1
C1(22)
E1(16)
Tr1
DETAIL "B"
AN
G1(15)
G2(38)
E2(39)
AX
C
AR
AS
AP
AV
AW
AJ
AH
AC (4 PLACES)
AQ
DETAIL "A"
E2
(47)
C1
(48)
Th
NTC
TH1
(1)
*ALL PIN DIMENSIONS WITHIN
A TOLERANCE OF ±0.5
TH2
(2)
Outline Drawing and Circuit Diagram
Dimensions
A
B
C
D
E
F
G
H
J
K
L
M
N
P
Q
R
S
T
U
V
W
X
Y
04/10 Rev. 0
Inches
Millimeters
Dimensions
5.98
2.44
0.67
5.39
4.79
4.33±0.02
3.89
3.72
0.53
0.15
0.28
0.30
1.95
0.9
0.55
0.87
0.67
0.48
0.24
0.16
0.37
0.83
M6
152.0
62.0
17.0
137.0
121.7
110.0±0.5
99.0
94.5
13.5
3.8
7.25
7.75
49.54
22.86
14.0
22.0
17.0
12.0
6.0
4.2
6.5
21.14
M6
Z
AA
AB
AC
AD
AE
AF
AG
AH
AJ
AK
AL
AM
AN
AP
AQ
AR
AS
AT
AU
AV
AW
AX
Inches
Millimeters
1.53
39.0
1.97±0.02
50.0±0.5
2.26
57.5
0.22 Dia.
5.5 Dia.
0.67+0.04/-0.0217.0+1.0/-0.5
0.51
13.0
0.27
7.0
0.03
0.8
0.81
20.5
0.12
3.0
0.14
3.5
0.21
5.4
0.49
12.5
0.15
3.81
0.05
1.15
0.025
0.65
0.29
7.4
0.24
6.2
0.17 Dia.
4.3 Dia.
0.10 Dia.
2.5 Dia.
0.08 Dia.
2.1 Dia.
0.06
1.5
0.49
12.5
Description:
Powerex IGBTMOD™ Modules
are designed for use in switching
applications. Each module
consists of two IGBT Transistors
in a half-bridge configuration with
each transistor having a reverseconnected super-fast recovery
free-wheel diode. All components
and interconnects are isolated from
the heat sinking baseplate, offering
simplified system assembly and
thermal management.
Features:
£ AlSiC Baseplate
£ Low Drive Power
£ Low VCE(sat)
£ Discrete Super-Fast Recovery
Free-Wheel Diode
£ Isolated Baseplate for Easy
Heat Sinking
Applications:
£ AC Motor Control
£ Motion/Servo Control
£ Photovoltaic/Fuel Cell
1
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
QID0640020
Dual IGBTMOD™ NX-Series Module
400 Amperes/600 Volts
Absolute Maximum Ratings, Tj = 25°C unless otherwise specified
Characteristics
Symbol
Power Device Junction Temperature
QID0640020
Units
Tj
-40 to 150
°C
Tstg
-55 to 130
°C
Mounting Torque, M5 Mounting Screws
—
31
in-lb
Mounting Torque, M6 Main Terminal Screws
—
40
in-lb
Module Weight (Typical)
—
220
Grams
Baseplate Flatness, On Centerline X, Y (See Below)
—
±0 ~ +100
µm
VISO
2500
Volts
Collector-Emitter Voltage (G-E Short)
VCES
600
Volts
Gate-Emitter Voltage (C-E Short)
Storage Temperature
Isolation Voltage, AC 1 minute, 60Hz Sinusoidal
Inverter Sector
VGES
±20
Volts
Collector Current (TC = 60°C)*1
IC
400
Amperes
Peak Collector Current (Pulse)*3
ICM
800
Amperes
Emitter Current (TC = 25°C)*1*4 IE*2
400
Amperes
IEM*2
800
Amperes
PC
1115
Watts
Peak Emitter Current (Pulse)*3
Maximum Collector Dissipation (TC = 25°C)*1*4
*1
*2
*3
*4
Case temperature (TC) and heatsink temperature (Tf) are defined on the surface of the baseplate and heatsink at just under the chip.
IE, IEM, VEC, trr and Qrr represent ratings and characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
Pulse width and repetition rate should be such that device junction temperature (Tj) does not exceed Tj(max) rating.
Junction temperature (Tj) should not increase beyond Tj(max) rating.
BASEPLATE FLATNESS
MEASUREMENT POINT
CHIP LOCATION (TOP VIEW)
NTC Thermistor
43.2
Y
FWDi
0
IGBT
0
0
46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25
X
– : CONCAVE
21.5
47
24
Th
32.0
30.0
48
23
2
3
4
5
6
7
8
43.6
9 10 11 12 13 14 15 16 17 18 19 20 21 22
36.3
0
1
29.6
+ : CONVEX
HEATSINK SIDE
21.5
78.6
+ : CONVEX
HEATSINK SIDE
– : CONCAVE
Chip Location (Top View)
Dimensions in mm (Tolerance: ±1mm)
2
04/10 Rev. 0
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
QID0640020
Dual IGBTMOD™ NX-Series Module
400 Amperes/600 Volts
Electrical and Mechanical Characteristics, Tj = 25°C unless otherwise specified
Inverter Sector
Characteristics
Collector Cutoff Current
Gate-Emitter Threshold Voltage
Gate Leakage Current
Collector-Emitter Saturation Voltage
Symbol
Test Conditions
Min.
Typ.
Max.
Units
ICES
VCE = VCES, VGE = 0V
—
—
1.0
mA
VGE(th)
IC = 40mA, VCE = 10V
5
6
7
Volts
IGES
VGE = VGES, VCE = 0V
—
—
0.5
µA
VCE(sat)
IC = 400A, VGE = 15V, Tj = 25°C*5
—
1.7
2.1
Volts
IC = 400A, VGE = 15V, Tj = 125°C*5
—
1.9
—
Volts
IC = 400A, VGE = 15V, Chip
—
1.6
—
Volts
—
—
50.0
nF
—
—
5.3
nF
Input Capacitance
Cies
Output Capacitance
Coes
Reverse Transfer Capacitance
Cres
Total Gate Charge
QG
VCE = 10V, VGE = 0V
—
—
1.6
nF
VCC = 300V, IC = 400A, VGE = 15V
—
1100
—
nC
—
—
200
ns
VCC = 300V, IC = 400A,
—
—
200
ns
Inductive
Turn-on Delay Time
td(on)
Load
Turn-on Rise Time
tr
Switch
Turn-off Delay Time
td(off)
VGE = ±15V,
—
—
400
ns
Time
Turn-off Fall Time
tf
RG = 3.6Ω, IE = 400A,
—
—
600
ns
Reverse Recovery Time
trr*2
Inductive Load Switching Operation
—
—
200
ns
Reverse Recovery Charge
Qrr*2
—
11
—
µC
Emitter-Collector Voltage
VEC*2
IE = 400A, VGE = 0V *5
—
2.0
2.8
Volts
IE = 400A, VGE = 0V*5
—
1.9
—
Volts
Thermal and Mechanical Characteristics, Tj = 25°C unless otherwise specified
Characteristics
Module Lead Resistance
Symbol
Test Conditions
Min.
Typ.
Max.
Units
Rlead
Main Termnals-Chip (Per Switch)
—
1.1
—
mΩ
IGBT*1
Thermal Resistance, Junction to Case**
Rth(j-c)Q
Per
—
—
0.112
°C/W
Thermal Resistance, Junction to Case**
Rth(j-c)D
Per FWDi*1
—
—
0.192
°C/W
Rth(c-f)
Case to Heatsink (Per 1 Module)
—
0.015
—
°C/W
Contact Thermal Resistance**
Thermal Grease Applied*1*7
Internal Gate Resistance
RGint
External Gate Resistance
RG
TC = 25°C
­—
0
—
Ω
1.6
—
16
Ω
Min.
Typ.
Max.
Units
4.85
5.00
5.15
kΩ
–7.3
—
+7.8
%
—
3375
—
K
—
—
10
mW
NTC Thermistor Sector, Tj = 25°C unless otherwise specified
Characteristics
Symbol
Zero Power Resistance
R
Deviation of Resistance
∆R/R
B Constant
Power Dissipation
B(25/50)
P25
Test Conditions
TC =
25°C*1
TC = 100°C, R100 = 493Ω*1
)*6
B = (InR1 – InR2) / (1/T1 – 1/T2
TC = 25°C*1
**Thermal resistance values are per 1 element.
*1 Case temperature (TC) and heatsink temperature (Tf) are defined on the surface of the baseplate and heatsink at just under the chip.
*2 IE, IEM, VEC, trr and Qrr represent ratings and characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
*5 Pulse width and repetition rate should be such as to cause negligible temperature rise.
*6 R1: Resistance at Absolute Temperature T1(K), R2: Resistance at Absolute Temperature T2(K), T(K) = T(°C) + 273.15
*7 Typical value is measured by using thermally conductive grease of λ = 0.9 [W/(m • K)].
04/10 Rev. 0
3
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
QID0640020
Dual IGBTMOD™ NX-Series Module
400 Amperes/600 Volts
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(INVERTER PART - TYPICAL)
VGE =
20V
3.5
Tj = 25°C
15
COLLECTOR-EMITTER
SATURATION VOLTAGE, VCE(sat), (VOLTS)
12
13
600
11
400
200
10
8
9
0
2
4
6
8
1.0
0.5
0
200
400
600
IC = 800A
6
IC = 400A
4
IC = 160A
2
0
800
6
8
10
12
14
16
18
GATE-EMITTER VOLTAGE, VGE, (VOLTS)
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(INVERTER PART - TYPICAL)
CAPACITANCE VS. VCE
(INVERTER PART - TYPICAL)
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(INVERTER PART - TYPICAL)
102
Tj = 25°C
Tj = 125°C
CAPACITANCE, Cies, Coes, Cres, (nF)
EMITTER CURRENT, IE, (AMPERES)
1.5
8
COLLECTOR-CURRENT, IC, (AMPERES)
102
0
1
2
3
Coes
100
Cres
100
101
102
tf
103
td(off)
td(on)
102
101
101
tr
102
103
COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)
COLLECTOR CURRENT, IC, (AMPERES)
SWITCHING TIME VS.
GATE RESISTANCE
(INVERTER PART - TYPICAL)
REVERSE RECOVERY CHARACTERISTICS
(INVERTER PART - TYPICAL)
GATE CHARGE VS. VGE
(INVERTER PART)
103
td(on)
102
101
100
tr
VCC = 300V
VGE = ±15V
IC = 400A
Tj = 125°C
Inductive Load
101
GATE RESISTANCE, RG, (Ω)
102
REVERSE RECOVERY, Irr (A), trr (ns)
tf
20
VCC = 300V
VGE = ±15V
RG = 3.6Ω
Tj = 25°C
Inductive Load
102
101
101
Irr
trr
102
EMITTER CURRENT, IE, (AMPERES)
103
20
VCC = 300V
VGE = ±15V
RG = 3.6Ω
Tj = 125°C
Inductive Load
Cies
101
10-1
10-1
4
104
VGE = 0V
EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS)
td(off)
SWITCHING TIME, (ns)
2.0
Tj = 25°C
COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)
103
4
2.5
0
10
103
101
3.0
SWITCHING TIME, (ns)
0
10
VGE = 15V
Tj = 25°C
Tj = 125°C
GATE-EMITTER VOLTAGE, VGE, (VOLTS)
COLLECTOR CURRENT, IC, (AMPERES)
800
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(INVERTER PART - TYPICAL)
COLLECTOR-EMITTER
SATURATION VOLTAGE, VCE(sat), (VOLTS)
OUTPUT CHARACTERISTICS
(INVERTER PART - TYPICAL)
IC = 400A
16
VCC = 200V
VCC = 300V
12
8
4
0
0
400
800
1200
1600
GATE CHARGE, QG, (nC)
04/10 Rev. 0
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
QID0640020
Dual IGBTMOD™ NX-Series Module
400 Amperes/600 Volts
100
101
102
103
102
101
VCC = 300V
VGE = ±15V
IC = 400A
Tj = 125°C
Inductive Load
Eon
Eoff
100
100
101
REVERSE RECOVERY
SWITCHING LOSS, Err, (mJ/PULSE)
VCC = 300V
VGE = ±15V
IE = 400A
Tj = 125°C
Inductive Load
NORMALIZED TRANSIENT THERMAL IMPEDANCE, Zth(j-c')
Zth = Rth • (NORMALIZED VALUE)
REVERSE RECOVERY SWITCHING LOSS VS.
GATE RESISTANCE
(INVERTER PART - TYPICAL)
100
10-1
101
10-2
Err
100
100
101
GATE RESISTANCE, RG, (Ω)
04/10 Rev. 0
102
102
10-3
10-3
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(INVERTER PART - TYPICAL)
10-2
10-1
100
VCC = 300V
VGE = ±15V
RG = 3.6Ω
Tj = 125°C
Inductive Load
101
Err
100
101
102
103
EMITTER CURRENT, IE, (AMPERES)
GATE RESISTANCE, RG, (Ω)
COLLECTOR CURRENT, IC, (AMPERES)
102
REVERSE RECOVERY
SWITCHING LOSS, Err, (mJ/PULSE)
101
102
VCC = 300V
VGE = ±15V
RG = 3.6Ω
Tj = 125°C
Inductive Load
Eon
Eoff
SWITCHING LOSS, Eon, Eoff, (mJ/PULSE)
SWITCHING LOSS, Eon, Eoff, (mJ/PULSE)
102
REVERSE RECOVERY SWITCHING LOSS VS.
EMITTER CURRENT
(INVERTER PART - TYPICAL)
SWITCHING LOSS VS.
GATE RESISTANCE
(INVERTER PART - TYPICAL)
SWITCHING LOSS VS.
COLLECTOR CURRENT
(INVERTER PART - TYPICAL)
101
10-1
Single Pulse
TC = 25°C
Per Unit Base =
Rth(j-c) =
0.093°C/W
(IGBT)
Rth(j-c) =
0.16°C/W
(FWDi)
10-2
10-5
10-4
10-3
10-3
TIME, (s)
5