CM1000E3U-34NF Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 Mega Power Chopper IGBTMOD™ 1000 Amperes/1700 Volts TC MEASURED POINTS (BASEPLATE SIDE) A D G U L H H K W C2E1 AC S C2 C1 G2 E1 E2 G1 AB X J Y CB Z T J E2 E Description: Powerex Chopper IGBTMOD™ Modules are designed for use in switching applications. Each module consists of one IGBT Transistor having a reverseconnected super-fast recovery free-wheel diode and an anodecollector connected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management. F C1 U V F H H H H H H G G AA L R (9 PLACES) M LABEL P C2 G2 E2 C2E1 C1 E2 FREE-WHEEL DIODE C1 (NC) G1 (NC) CLAMP DIODE E1 (NC) Outline Drawing and Circuit Diagram Dimensions Inches Millimeters Dimensions Inches Millimeters M 0.075±0.008 1.9±0.2 A 5.91 150.0 B 5.10 129.5 P 1.0 25.1 M6 Metric M6 C 1.67±0.01 42.5±0.25 R D 5.41±0.01 137.5±0.25 U 0.62 15.7 0.71 18.0 E 6.54 166.0 V F 2.91±0.01 74.0±0.25 W 0.75 19.0 0.43 11.0 G 1.65 42.0 X H 0.55 14.0 Y 0.83 21.0 0.41 10.5 J 1.50±0.01 38.0±0.25 Z K 0.16 4.0 AA 0.22 5.5 AB 0.47 12.0 AC 0.08 2.0 L 1.36 +0.04/-0.02 34.6 +1.0/-0.5 Housing Type (J.S.T. MFG. CO. LTD) S = VHR-2N T = VHR-5N 04/09 Features: £ Low Drive Power £ Low VCE(sat) £ Discrete Super-Fast Recovery Free-Wheel Diode £ Isolated Baseplate for Easy Heat Sinking Applications: £ High Power DC Power Supply £ Large DC Motor Drives £ Utility Interface Inverters Ordering Information: Example: Select the complete module number you desire from the table - i.e. CM1000E3U-34NF is a 1000V (VCES), 1700 Ampere Chopper IGBTMOD Power Module. Type Current Rating Amperes VCES Volts (x 50) CM 1000 34 1 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 CM1000E3U-34NF Mega Power Chopper IGBTMOD™ 1000 Amperes/1700 Volts Absolute Maximum Ratings, Tj = 25°C unless otherwise specified Ratings Symbol CM1000E3U-34NF Units Tj -40 to 150 °C Junction Temperature Storage Temperature*7 Tstg -40 to 125 °C Collector-Emitter Voltage (G-E SHORT) VCES 1700 Volts Gate-Emitter Voltage (C-E SHORT) VGES ±20 Volts Collector Current DC (TC = 104°C)*6 IC 1000 Amperes Peak Collector Current (Pulse)*2 ICM 2000 Amperes Emitter Current (TC = 25°C)*4 IE*1 75 Amperes Peak Emitter Current (Pulse)*2 *1 IEM 150 Amperes Maximum Collector Dissipation (TC = 25°C)*2*4 PC 3900 Watts Mounting Torque, M6 Mounting Screws (Max.) – 40 in-lb Mounting Torque, M6 Main Terminal Screw (Max.) – 40 in-lb Weight (Typical) Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) – 1400 Grams Viso 3500 Vrms Clamp Diode Part, Tj = 25°C unless otherwise specified Repetitive Peak Reverae Voltage VRRM 1700 Volts Forward Current (TC = 25°C)*4 IF 1000 Amperes Peak Forward Current (Pulse)*2 IFM 2000 Amperes *1 IE, IEM, and VEC represent ratings and characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi). *2 Pulse width and repetition rate should be such that device junction temperature (Tj) does not exceed Tj(max) rating. *4 Case temperature (TC) is baseplate side. *6 Case temperature (TC') and heatsink temperature (Tf') measured point is just under the chips. *7 The operation temperature is restrained by the permission temperature of female connector housing. Chip Location (Top View) Diode 0 98.6 Clamp Diode 39.2 48.4 46.6 IGBT 0 0 10.6 10.5 23.2 23.4 35.8 36.2 52.2 52.0 64.8 64.8 77.4 77.7 106.4 118.8 119.2 51.4 48.4 93.5 0 93.6 106.2 2 Dimensions in mm (Tolerance: ±1mm) 04/09 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 CM1000E3U-34NF Mega Power Chopper IGBTMOD™ 1000 Amperes/1700 Volts Electrical Characteristics, Tj = 25°C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Units Collector-Cutoff Current ICES VCE = VCES, VGE = 0V – – 1 mA Gate Leakage Current IGES VGE = VGES, VCE = 0V – – 0.5 μA Gate-Emitter Threshold Voltage VGE(th) IC = 100mA, VCE = 10V 5.5 7 8.5 Volts Collector-Emitter Saturation Voltage VCE(sat) IC = 1000A, VGE = 15V, Tj = 25°C*3 – 2.2 2.8 Volts (Without Lead Resistance) (Chip) IC = 1000A, VGE = 15V, Tj = 125°C*3 – 2.45 – Volts Module Lead Resistance R(lead) IC = 1000A, Terminal-Chip – 0.286 – mΩ – – 220 nF VCE = 10V, VGE = 0V – – 25 nF – – 4.7 nF – 6000 – nC Input Capacitance Cies Output Capacitance Coes Reverse Transfer Capacitance Cres Total Gate Charge QG VCC = 1000V, IC = 1000A, VGE = 15V Turn-on Delay Time td(on) VCC = 1000V, IC = 1000A, – – 600 ns Turn-on Rise Time tr VGE = ±15V, – – 150 ns Turn-off Delay Time td(off) RG = 0.47Ω, – – 900 ns tf Inductive Load – – 200 ns Turn-off Fall Time Voltage*1 VEC External Gate Resistance RG Emitter-Collector IE = 75A, VGE = 0V*3 – – 2.8 Volts 0.47 – 4.7 Ω Typ. Max. Clamp Diode Characteristics, Tj = 25°C unless otherwise specified Characteristics Symbol Test Conditions Min. Units Repetitive Peak Reverse Current IRRM VR = VRRM – – 1 mA Forward Voltage VFM IF =1000A*3 – – 3.0 Volts Reverse Recovery Time trr IF =1000A – – 450 ns Reverse Recovery Charge Qrr IF =1000A – 90 – μC Thermal and Mechanical Characteristics, Tj = 25°C unless otherwise specified Characteristics Symbol Case*4 Thermal Resistance, Junction to Case*4 Case*6 Thermal Resistance, Junction to Case*6 Thermal Resistance, Junction to Thermal Resistance, Junction to Thermal Resistance, Junction to Contact Thermal Resistance*6 Case*4 Test Conditions Min. Typ. Max. Rth(j-c)Q IGBT – – 0.032 °C/W Rth(j-c)D Clamp – – 0.053 °C/W Rth(j-c')Q IGBT – – 0.014 °C/W Rth(j-c')D Clamp – – 0.023 °C/W Module*5 – 0.016 – °C/W Thermal Grease Applied per 1/2 Module*5 – 0.012 – °C/W Rth(c-f)D Rth(c-f) Thermal Grease Applied per 1/2 Units *1 IE, IEM, and VEC represent ratings and characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi). *3 Pulse width and repetition rate should be such as to cause negligible temperature rise. *4 Case temperature (TC) is baseplate side. *5 Typical value is measured by using thermally conductive grease of λ = 0.9 [W/(m • K)]. *6 Case temperature (TC') and heatsink temperature (Tf') measured point is just under the chips. 04/09 3 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 CM1000E3U-34NF Mega Power Chopper IGBTMOD™ 1000 Amperes/1700 Volts OUTPUT CHARACTERISTICS (TYPICAL) 2000 VGE = 20V 15 1600 12 13 1200 11 800 400 10 9 8 0 0 2 4 6 8 1600 1200 0 4 8 12 16 4 3 2 1 0 20 0 400 800 1200 1600 GATE-EMITTER VOLTAGE, VGE, (VOLTS) COLLECTOR-CURRENT, IC, (AMPERES) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) CAPACITANCE VS. VCE (TYPICAL) 104 103 4 IC = 2000A IC = 1000A 2 0 4 8 12 16 2.0 2.5 3.0 3.5 REVERSE RECOVERY CHARACTERISTICS (TYPICAL) 104 tr VCC = 1000V VGE = ±15V RG = 0.47Ω Tj = 125°C Inductive Load 103 COLLECTOR CURRENT, IC, (AMPERES) 104 REVERSE RECOVERY TIME, trr, (ns) td(off) 103 trr 102 102 103 EMITTER CURRENT, IE, (AMPERES) Cres 100 100 101 102 GATE CHARGE, VGE Irr VCC = 1000V VGE = ±15V RG = 0.47Ω Tj = 25°C Inductive Load Coes COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) 104 103 101 10-1 10-1 4.0 HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) tf 101 102 1.5 EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS) td(on) 102 Tj = 25°C Tj = 125°C GATE-EMITTER VOLTAGE, VGE, (VOLTS) 104 103 103 102 0.5 1.0 20 CAPACITANCE, Cies, Coes, Cres, (nF) IC = 400A Cies 102 102 104 20 GATE-EMITTER VOLTAGE, VGE, (VOLTS) 6 REVERSE RECOVERY CURRENT, Irr, (AMPERES) 8 2000 VGE = 0V Tj = 25°C EMITTER CURRENT, IE, (AMPERES) COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) 400 VGE = 15V Tj = 25°C Tj = 125°C COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) 0 SWITCHING TIME, (ns) 800 0 10 10 4 5 VCE = 10V Tj = 25°C Tj = 125°C COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) Tj = 25°C COLLECTOR CURRENT, IC, (AMPERES) COLLECTOR CURRENT, IC, (AMPERES) 2000 COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) TRANSFER CHARACTERISTICS (TYPICAL) IC = 1000A 16 VCC = 800V VCC = 1000V 12 8 4 0 0 2000 4000 6000 8000 10000 GATE CHARGE, QG, (nC) 04/09 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 10-3 10-2 10-1 100 101 10-1 Single Pulse TC = 25°C Per Unit Base Rth(j-c') = 0.014°C/W (IGBT) Rth(j-c') = 0.023°C/W (Clamp) 10-2 10-3 10-5 10-4 104 SWITCHING ENERGY VS. EXTERNAL GATE RESISTANCE (TYPICAL) REVERSE RECOVERY ENERGY VS. EXTERNAL GATE RESISTANCE (TYPICAL) REVERSE RECOVERY ENERGY, Err, (mJ/PULSE) SWITCHING LOSS, Eon, Eoff, (mJ/PULSE) 103 COLLECTOR CURRENT, IC, (AMPERES) VCC = 1000V VGE = ±15V Tj = 125°C IC = 1000A Eon Eoff Inductive Load 1 2 3 4 EXTERNAL GATE RESISTANCE, RG, (Ω) 04/09 VCC = 1000V VGE = 15V Tj = 125°C RG = 0.47Ω Eon Eoff Inductive Load 101 TIME, (s) 102 0 102 100 102 10-3 103 101 SWITCHING LOSS VS. COLLECTOR CURRENT (TYPICAL) 3 10 5 REVERSE RECOVERY ENERGY VS. FORWARD CURRENT (TYPICAL) REVERSE RECOVERY ENERGY, Err, (mJ/PULSE) 100 TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT & CLAMP DIODE) SWITCHING LOSS, Eon, Eoff, (mJ/PULSE) NORMALIZED TRANSIENT THERMAL IMPEDANCE, Zth(j-c) Zth = Rth • (NORMALIZED VALUE) CM1000E3U-34NF Mega Power Chopper IGBTMOD™ 1000 Amperes/1700 Volts 103 102 101 100 102 VCC = 1000V VGE = 15V Tj = 125°C RG = 0.47Ω Inductive Load 103 104 FORWARD CURRENT, IF, (AMPERES) 103 102 101 VCC = 1000V VGE = ±15V Tj = 125°C IC = 1000A Inductive Load 0 1 2 3 4 5 EXTERNAL GATE RESISTANCE, RG, (Ω) 5