CM75RX-34SA Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com Six IGBT + Brake NX-Series Module 75 Amperes/1700 Volts AV AU AW AQ AE K BA Y DETAIL "B" AH Q AM BB Y BB Y BB Y MN BC BB Y W 20 19 AX Y DETAIL "C" 18 17 16 15 AZ 14 13 12 11 21 U 8 7 DETAIL "C" B 1 L 2 H Z X Z TH1 (7) GuP(20) GvP(16) GwP(12) ESuP(19) ESvP(15) ESwP(11) AJ V(2) W(3) GuN(18) GvN(14) GwN(10) ESuN(17) ESvN(13) ESwN(9) Z AE Tolerance Otherwise Specified (mm) Division of Dimension Tolerance 0.5 to 3 ±0.2 over 3 to 6 ±0.3 over 6 to 30 ±0.5 over 30 to 120 ±0.8 over 120 to 400 ±1.2 The tolerance of size between terminals is assumed to ±0.4 J AQ AR AS TH2 (8) NTC AL AE 4 AY P(21) EB(5) N(22) 3 Y 6 5 DETAIL "A" R GB(6) AC AD AF (6 PLACES) 22 E U(1) AG 10 9 AB (4 PLACES) P DETAIL "B" AK AX Y AY S B(4) AW BA A D F G K T BB Y AA V C 45° K AT AN AM AP DETAIL "A" Outline Drawing and Circuit Diagram Dimensions Inches A 5.39 B 2.44 C 0.67+0.04/-0.02 D 4.79 E 0.45 F 4.33±0.02 G 3.72 H 0.53 J 0.23 K 0.30 L 0.53 M 3.02 N 1.53 P 0.87 Q 0.65 R 0.55 S 0.47 T 0.24 U 0.31 V 0.37 W 0.61 X 0.81 Y 0.15±0.008 Z 0.9 AA 0.14 AB 0.22 Dia. 03/13 Rev. 0 Millimeters 136.9 62.0 17.0+1.0/-0.5 121.7 11.5 110.0±0.5 94.5 13.5 5.9 7.75 13.64 77.0 39.0 22.0 16.5 14.0 12.0 6.0 8.0 6.5 15.64 20.71 3.81±0.2 22.86 3.5 5.5 Dia. Dimensions AC AD AE AF AG AH AJ AK AL AM AN AP AQ AR AS AT AU AV AW AX AY AZ BA BB BC Inches 1.97±0.02 2.26 0.14 M5 0.27 0.67 0.44±0.008 0.81 0.60±0.008 0.12 0.53 0.49 Dia. 0.102 Dia. 0.088 Dia. 0.05 0.02 0.04 0.54 0.51 0.75 0.021±0.008 0.28±0.008 0.43±0.008 0.46±0.008 Millimeters 50.0±0.5 57.5 3.75 M5 7.0 17.0 11.67±0.2 20.5 15.24±0.2 3.0 13.4 12.5 4.5 Dia. 2.6 Dia. 2.25 Dia. 1.2 0.65 1.15 13.7 13.0 19.12 0.55±0.2 7.24±0.2 11.42±0.2 11.8±0.2 Description: Powerex IGBT Modules are designed for use in switching applications. Each module consists of six IGBT Transistors in a three phase bridge configuration and a seventh IGBT with freewheel diode for dynamic braking. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management. Features: £ Low Drive Power £ Low VCE(sat) £ Discrete Super-Fast Recovery Free-Wheel Diode £ Isolated Baseplate for Easy Heat Sinking Applications: £ AC Motor Control £ Motion/Servo Control £ Photovoltaic/Fuel Cell Ordering Information: Example: Select the complete module number you desire from the table below -i.e. CM75RX-34SA is a 1700V (VCES), 75 Ampere Six-IGBT + Brake Power Module. Type Current Rating Amperes VCES Volts (x 50) CM75 34 1 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com CM75RX-34SA Six IGBT + Brake NX-Series Module 75 Amperes/1700 Volts Absolute Maximum Ratings, Tj = 25°C unless otherwise specified Inverter Part IGBT/FWDi Characteristics SymbolRating Units Collector-Emitter Voltage (VGE = 0V) VCES1700 Volts Gate-Emitter Voltage (VCE = 0V) VGES±20 Volts Collector Current (DC, TC = 125°C)*2,*4IC Collector Current (Pulse, 75Amperes Repetitive)*3I CRM 150Amperes Total Power Dissipation (TC = 25°C)*2,*4Ptot 830Watts Emitter Current*2,*4 IE*1 75Amperes Emitter Current (Pulse, Repetitive)*3 IERM*1 150Amperes Maximum Junction Temperature Tj(max)175 °C Brake Part IGBT/ClampDi Characteristics SymbolRating Units Collector-Emitter Voltage (VGE = 0V) VCES1700 Volts Gate-Emitter Voltage (VCE = 0V) VGES±20 Volts Collector Current (DC, TC = 125°C)*2,*4IC Collector Current (Pulse, 50Amperes Repetitive)*3I CRM 100Amperes Total Power Dissipation (TC = 25°C)*2,*4Ptot 600Watts Repetitive Peak Reverse Voltage (VGE = 0V) VRRM1700 Volts Forward Current*2,*4 Forward Current (Pulse, IF*1 Repetitive)*3 Maximum Junction Temperature 50Amperes *1 IFRM 100Amperes Tj(max)175 °C Module Characteristics SymbolRating Units °C Operating Junction Temperature Tj(op) -40 to +150 °C Storage Temperature Tstg -40 to +125 °C Isolation Voltage (Terminals to Baseplate, RMS, f = 60Hz, AC 1 minute) VISO4000Volts Tr VN 102.3 Di VP 91.5 Tr UN 80.7 Di UP 63.4 Tr VP Tr UP 39.6 31.2 (Tr/UN, VN) 28.8 (Di/UP, VP, WP) 20.6 52.6 33.7 22.9 0 *1 Represent ratings and characteristics of the anti-parallel, emitter-to-collector free wheeling diode (FWDi). *2 Case temperature (TC) and heatsink temperature (Ts) is measured on the surface (mounting side) of the baseplate and the heatsink side just under the chips. Refer to the figure to the right for chip location. The heatsink thermal resistance should be measured just under the chips. *3 Pulse width and repetition rate should be such that device junction temperature (Tj) does not exceed Tj(max) rating. *4 Junction temperature (Tj) should not increase beyond maximum junction temperature (Tj(max)) rating. 99.0 Maximum Case Temperature*2TC(max)125 LABEL SIDE Tr WP Tr Th WN Di Br Di WN Tr Br 40.7 37.0 34.0 Di WP Di VN Di UN 103.3 92.1 80.0 51.9 62.7 33.0 22.2 0 0 0 26.2 22.0 Each mark points to the center position of each chip. Tr*P / Tr*N / TrBr (* = U/V/W): IGBT DiBr: ClampDi 2 Di*P / Di*N (* = U/V/W): FWDi Th: NTC Thermistor 03/13 Rev. 0 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com CM75RX-34SA Six IGBT + Brake NX-Series Module 75 Amperes/1700 Volts Electrical Characteristics, Tj = 25°C unless otherwise specified Inverter Part IGBT/FWDi Characteristics Symbol Test Conditions Min. Typ. Max. Units Collector-Emitter Cutoff Current ICES VCE = VCES, VGE = 0V — — 1.0 mA Gate-Emitter Leakage Current IGES VGE = VGES, VCE = 0V — — 0.5 µA Gate-Emitter Threshold Voltage VGE(th) IC = 7.5mA, VCE = 10V 5.4 6.0 6.6 Volts Collector-Emitter Saturation Voltage VCE(sat) IC = 75A, VGE = 15V, Tj = 25°C*6 — 2.0 2.5 Volts (Terminal) IC = 75A, VGE = 15V, Tj = 125°C*6 — 2.2 — Volts IC = 75A, VGE = 15V, Tj = 150°C*6 —2.25 — Volts Collector-Emitter Saturation Voltage VCE(sat) IC = 75A, VGE = 15V, Tj = 25°C*6 — 1.9 2.4 Volts (Chip) IC = 75A, VGE = 15V, Tj = 125°C*6 — 2.1 — Volts —2.15 — Volts — — 13 nF — — 0.53 nF — — 0.13 nF — 414 — nC — — 200 ns IC = 75A, VGE = 15V, Tj = Input Capacitance Cies Output Capacitance Coes Reverse Transfer Capacitance Cres Gate Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Emitter-Collector Voltage Emitter-Collector Voltage QG VCE = 10V, VGE = 0V VCC = 1000V, IC = 75A, VGE = 15V td(on) tr VCC = 1000V, IC = 75A, VGE = ±15V, — — 100 ns td(off) RG = 10Ω, Inductive Load — — 700 ns — — 600 ns VEC*1 tf IE = 75A, VGE = 0V, Tj = 25°C*6 — 4.1 5.3 Volts (Terminal) IE = 75A, VGE = 0V, Tj = 125°C*6 — 2.9 — Volts IE = 75A, VGE = 0V, Tj = 150°C*6 — 2.7 — Volts VEC IE = 75A, VGE = 0V, Tj = 25°C*6 — 4.0 5.2 Volts (Chip) IE = 75A, VGE = 0V, Tj = 125°C*6 — 2.8 — Volts 150°C*6 — 2.6 — Volts — — 200 ns *1 IE = 75A, VGE = 0V, Tj = Reverse Recovery Time 150°C*6 trr*1 VCC = 1000V, IE = 75A, VGE = ±15V *1 Reverse Recovery Charge Qrr Turn-on Switching Energy per Pulse Eon RG = 10Ω, Inductive Load — 2.0 — µC VCC = 1000V, IC = IE = 75A, — 17.1 — mJ Turn-off Switching Energy per Pulse Eoff VGE = ±15V, RG = 10Ω, — 17.4 — mJ Reverse Recovery Energy per Pulse Err*1 Tj = 150°C, Inductive Load — 15.9 — mJ Main Terminals-Chip, — — 4.0 mΩ — 0 — Ω Internal Lead Resistance RCC' + EE' Per Switch,TC = 25°C*2 Per Switch 99.0 Tr VN 102.3 Di VP 91.5 Tr UN 80.7 Di UP 63.4 Tr VP Tr UP 39.6 31.2 (Tr/UN, VN) 28.8 (Di/UP, VP, WP) 20.6 52.6 0 33.7 rg *1 Represent ratings and characteristics of the anti-parallel, emitter-to-collector free wheeling diode (FWDi). *2 Case temperature (TC) and heatsink temperature (Ts) is measured on the surface (mounting side) of the baseplate and the heatsink side just under the chips. Refer to the figure to the right for chip location. The heatsink thermal resistance should be measured just under the chips. *6 Pulse width and repetition rate should be such as to cause negligible temperature rise. 22.9 Internal Gate Resistance LABEL SIDE Tr WP Tr Th WN Di Br Di WN Tr Br 40.7 37.0 34.0 Di WP Di VN Di UN 103.3 92.1 80.0 51.9 62.7 33.0 22.2 0 0 0 26.2 22.0 Each mark points to the center position of each chip. 03/13 Rev. 0 Tr*P / Tr*N / TrBr (* = U/V/W): IGBT DiBr: ClampDi Di*P / Di*N (* = U/V/W): FWDi Th: NTC Thermistor 3 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com CM75RX-34SA Six IGBT + Brake NX-Series Module 75 Amperes/1700 Volts Electrical Characteristics, Tj = 25°C unless otherwise specified Brake Part IGBT/ClampDi Characteristics Symbol Test Conditions Min. Typ. Max. Units Collector-Emitter Cutoff Current ICES VCE = VCES, VGE = 0V — — 1.0 mA Gate-Emitter Leakage Current IGES VGE = VGES, VCE = 0V — — 0.5 µA Gate-Emitter Threshold Voltage VGE(th) IC = 5mA, VCE = 10V 5.4 6.0 6.6 Volts Collector-Emitter Saturation Voltage VCE(sat) IC = 50A, VGE = 15V, Tj = 25°C*6 — 2.0 2.5 Volts (Terminal) IC = 50A, VGE = 15V, Tj = 125°C*6 — 2.2 — Volts IC = 50A, VGE = 15V, Tj = 150°C*6 —2.25 — Volts Collector-Emitter Saturation Voltage VCE(sat) IC = 50A, VGE = 15V, Tj = 25°C*6 — 1.9 2.4 Volts (Chip) IC = 50A, VGE = 15V, Tj = 125°C*6 — 2.1 — Volts —2.15 — Volts — — 8.8 nF — — 0.35 nF — — 0.09 nF — 276 — nC — — 200 ns IC = 50A, VGE = 15V, Tj = Input Capacitance Cies Output Capacitance Coes Reverse Transfer Capacitance Cres Gate Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Repetitive Peak Reverse Current Forward Voltage QG VCE = 10V, VGE = 0V VCC = 1000V, IC = 50A, VGE = 15V td(on) tr VCC = 1000V, IC = 50A, VGE = ±15V, — — 100 ns td(off) RG = 13Ω, Inductive Load — — 700 ns — — 600 ns IRRM VR = VRRM, VGE = 0V — — 1 mA VF IF = 50A, VGE = 0V, Tj = 25°C*6 — 4.1 5.3 Volts (Terminal) IF = 50A, VGE = 0V, Tj = 125°C*6 — 2.9 — Volts tf 150°C*6 — 2.7 — Volts VF IF = 50A, VGE = 0V, Tj = 25°C*6 — 4.0 5.2 Volts (Chip) IF = 50A, VGE = 0V, Tj = 125°C*6 — 2.8 — Volts IF = 50A, VGE = 0V, Tj = 150°C*6 — 2.6 — Volts IF = 50A, VGE = 0V, Tj = Forward Voltage 150°C*6 Reverse Recovery Time trr VCC = 1000V, IF = 50A, VGE = ±15V — — 200 ns Reverse Recovery Charge Qrr*1 RG = 13Ω, Inductive Load — 1.3 — µC Turn-on Switching Energy per Pulse Eon VCC = 1000V, IC = IF = 50A, — 9.7 — mJ Turn-off Switching Energy per Pulse Eoff VGE = ±15V, RG = 13Ω, — 11.2 — mJ Reverse Recovery Energy per Pulse Err*1 Tj = 150°C, Inductive Load — 9.8 — mJ — 0 — Ω rg Tr VN 102.3 Di VP 91.5 Tr UN 80.7 Di UP 63.4 Tr VP Tr UP 39.6 31.2 (Tr/UN, VN) 28.8 (Di/UP, VP, WP) 20.6 52.6 33.7 0 99.0 *1 Represent ratings and characteristics of the anti-parallel, emitter-to-collector free wheeling diode (FWDi). *2 Case temperature (TC) and heatsink temperature (Ts) is measured on the surface (mounting side) of the baseplate and the heatsink side just under the chips. Refer to the figure to the right for chip location. The heatsink thermal resistance should be measured just under the chips. *6 Pulse width and repetition rate should be such as to cause negligible temperature rise. 22.9 Internal Gate Resistance *1 LABEL SIDE Tr WP Tr Th WN Di Br Di WN Tr Br 40.7 37.0 34.0 Di WP Di VN Di UN 103.3 92.1 80.0 51.9 62.7 33.0 22.2 0 0 0 26.2 22.0 Each mark points to the center position of each chip. Tr*P / Tr*N / TrBr (* = U/V/W): IGBT DiBr: ClampDi 4 Di*P / Di*N (* = U/V/W): FWDi Th: NTC Thermistor 03/13 Rev. 0 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com CM75RX-34SA Six IGBT + Brake NX-Series Module 75 Amperes/1700 Volts Electrical Characteristics, Tj = 25°C unless otherwise specified (continued) NTC Thermistor Part Characteristics Symbol Zero Power Resistance R25 Deviation of Resistance ∆R/R B Constant Test Conditions TC = Min. 25°C*2 TC = 100°C, R100 = 493Ω B(25/50) Max. Units 4.855.00 5.15 kΩ -7.3 +7.8 % — —3375 — K P25 TC = 25°C*2 — — 10 mW Thermal Resistance, Junction to Case*2 Rth(j-c)Q Per Inverter IGBT — — 0.18 K/W Thermal Resistance, Junction to Case*2 Rth(j-c)D Per Inverter FWDi — — 0.27 K/W Thermal Resistance, Junction to Case*2 Rth(j-c)Q Per Brake IGBT — — 0.25 K/W Thermal Resistance, Junction to Case*2 Rth(j-c)D Per Brake ClampDi — — 0.35 K/W Rth(c-f) Thermal Grease Applied, — 15 — K/kW Power Dissipation Approximate by Equation*7 Typ. Thermal Resistance Characteristics Contact Thermal Resistance, Case to Heatsink*2 Per 1 Module*8 Mechanical Characteristics Mounting Torque Mt Main Terminal, M5 Screw 22 27 31 in-lb Mounting Torque Ms Mounting to Heatsink, M5 Screw 22 27 31 in-lb Creepage Distance ds Clearance da Weight m Flatness of Baseplate ec Terminal to Terminal 16.3 — — mm Terminal to Baseplate 16.8 — — mm Terminal to Terminal 10.0 — — mm Terminal to Baseplate 10.0 — — mm On Centerline X, Y*5 ±0 — +100 µm — 1000 1200 Volts 13.515.0 16.5 Volts 370 g Recommended Operating Conditons, Ta = 25°C DC Supply Voltage VCC Applied Across P-N/P1-N1 Terminals Gate-Emitter Drive Voltage VGE(on) Applied Across GB-Es1/ External Gate Resistance RG G*P-*/G*N-Es (* = U, V, W) Terminals MOUNTING SIDE MOUNTING SIDE 03/13 Rev. 0 — 100 Ω Per Switch Brake IGBT 13 — 130 Ω Tr VN 102.3 Di VP 91.5 Tr UN 80.7 Di UP 63.4 Tr VP Tr UP 39.6 31.2 (Tr/UN, VN) 28.8 (Di/UP, VP, WP) 20.6 52.6 33.7 22.9 0 99.0 10 LABEL SIDE Tr WP Tr Th WN Di Br Di WN Tr Br 40.7 37.0 34.0 Di WP Di VN Di UN – : CONCAVE + : CONVEX 26.2 22.0 103.3 92.1 80.0 51.9 62.7 33.0 0 22.2 0 Y MOUNTING SIDE X 0 – : CONCAVE + : CONVEX *2 Case temperature (TC) and heatsink temperature (Ts) is measured on the surface (mounting side) of the baseplate and the heatsink side just under the chips. Refer to the figure to the right for chip location. The heatsink thermal resistance should be measured just under the chips. *5 Baseplate (mounting side) flatness measurement points (X, Y) are shown in the figure below. R25 1 1 *7 B(25/50) = In( )/( – ) R50 T25 T50 R25; Resistance at Absolute Temperature T25 [K]; T25 = 25 [°C] + 273.15 = 298.15 [K] R50; Resistance at Absolute Temperature T50 [K]; T50 = 50 [°C] + 273.15 = 323.15 [K] *8 Typical value is measured by using thermally conductive grease of λ = 0.9 [W/(m • K)]. Per Switch Inverter IGBT Each mark points to the center position of each chip. Tr*P / Tr*N / TrBr (* = U/V/W): IGBT DiBr: ClampDi Di*P / Di*N (* = U/V/W): FWDi Th: NTC Thermistor 5 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com CM75RX-34SA Six IGBT + Brake NX-Series Module 75 Amperes/1700 Volts COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (INVERTER PART - TYPICAL) OUTPUT CHARACTERISTICS (INVERTER PART - TYPICAL) 125 11 100 75 10 50 9 25 0 8 0 2 4 6 8 COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) 3.5 (Chip) 3.0 2.5 2.0 1.5 1.0 0.5 0 10 Tj = 25°C Tj = 125°C Tj = 150°C 4.0 0 25 50 75 100 125 COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) COLLECTOR CURRENT, IC, (AMPERES) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (INVERTER PART - TYPICAL) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (INVERTER PART - TYPICAL) Tj = 25°C (Chip) 8 IC = 150A 6 IC = 75A 4 IC = 45A 2 0 150 103 10 Tj = 25°C Tj = 125°C Tj = 150°C (Chip) 102 101 6 8 10 12 14 16 18 COLLECTOR CURRENT, IC, (AMPERES) 6 4.5 COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) Tj = 25°C (Chip) VGE = 20V 15 EMITTER CURRENT, IE, (AMPERES) COLLECTOR CURRENT, IC, (AMPERES) 150 20 0 1 2 3 4 5 6 EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS) 03/13 Rev. 0 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com CM75RX-34SA Six IGBT + Brake NX-Series Module 75 Amperes/1700 Volts HALF-BRIDGE SWITCHING CHARACTERISTICS (INVERTER PART - TYPICAL) CAPACITANCE VS. VCE (INVERTER PART - TYPICAL) 104 VGE = 0V Cies 101 100 SWITCHING TIME, (ns) CAPACITANCE, Cies, Coes, Cres, (nF) 102 Coes Cres 10-1 10-2 10-1 100 101 102 td(on) 101 VCC = 1000V VGE = ±15V RG = 10Ω Tj = 125°C Inductive Load tr 101 102 COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) COLLECTOR CURRENT, IC, (AMPERES) HALF-BRIDGE SWITCHING CHARACTERISTICS (INVERTER PART - TYPICAL) SWITCHING TIME VS. GATE RESISTANCE (INVERTER PART - TYPICAL) 104 td(off) SWITCHING TIME, (ns) 103 SWITCHING TIME, (ns) tf 100 100 102 104 tf 102 101 100 100 td(on) VCC = 1000V VGE = ±15V RG = 10Ω Tj = 150°C Inductive Load tr 101 COLLECTOR CURRENT, IC, (AMPERES) 03/13 Rev. 0 td(off) 103 102 103 VCC = 1000V VGE = ±15V IC = 75A Tj = 125°C Inductive Load td(off) tf 102 101 100 td(on) tr 101 102 EXTERNAL GATE RESISTANCE, RG, (Ω) 7 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com CM75RX-34SA Six IGBT + Brake NX-Series Module 75 Amperes/1700 Volts SWITCHING TIME VS. GATE RESISTANCE (INVERTER PART - TYPICAL) td(on) 102 103 REVERSE RECOVERY, Irr (A), trr (ns) td(off) tf tr 101 100 102 101 VCC = 1000V VGE = ±15V RG = 10Ω Tj = 125°C Inductive Load Irr trr 102 101 100 102 101 102 EXTERNAL GATE RESISTANCE, RG, (Ω) EMITTER CURRENT, IE, (AMPERES) REVERSE RECOVERY CHARACTERISTICS (INVERTER PART - TYPICAL) GATE CHARGE VS. VGE (INVERTER PART) 20 VCC = 1000V VGE = ±15V RG = 10Ω Tj = 150°C Inductive Load Irr trr 101 100 101 EMITTER CURRENT, IE, (AMPERES) 8 REVERSE RECOVERY, Irr (A), trr (ns) 103 103 VCC = 1000V VGE = ±15V IC = 75A Tj = 150°C Inductive Load GATE-EMITTER VOLTAGE, VGE, (VOLTS) SWITCHING TIME, (ns) 103 REVERSE RECOVERY CHARACTERISTICS (INVERTER PART - TYPICAL) 102 IC = 75A VCC = 1000V 16 12 8 4 0 0 100 200 300 400 500 600 GATE CHARGE, QG, (nC) 03/13 Rev. 0 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com CM75RX-34SA Six IGBT + Brake NX-Series Module 75 Amperes/1700 Volts HALF-BRIDGE SWITCHING CHARACTERISTICS (INVERTER PART - TYPICAL) 101 101 100 100 100 101 103 SWITCHING ENERGY, Eon, Eoff, (mJ) REVERSE RECOVERY ENERGY, Err, (mJ) 102 102 VCC = 1000V VGE = ±15V RG = 10Ω Tj = 125°C Inductive Load Eon Eoff Err REVERSE RECOVERY ENERGY, Err, (mJ) SWITCHING ENERGY, Eon, Eoff, (mJ) REVERSE RECOVERY ENERGY, Err, (mJ) 103 10-1 102 102 100 100 100 SWITCHING ENERGY, Eon, Eoff, (mJ) REVERSE RECOVERY ENERGY, Err, (mJ) SWITCHING ENERGY, Eon, Eoff, (mJ) REVERSE RECOVERY ENERGY, Err, (mJ) 102 101 GATE RESISTANCE, RG, (Ω) 03/13 Rev. 0 10-1 102 HALF-BRIDGE SWITCHING CHARACTERISTICS (INVERTER PART - TYPICAL) VCC = 1000V VGE = ±15V IC = 75A Tj = 125°C Inductive Load Eon Eoff Err 100 100 101 COLLECTOR CURRENT, IC, (AMPERES) EMITTER CURRENT, IE, (AMPERES) HALF-BRIDGE SWITCHING CHARACTERISTICS (INVERTER PART - TYPICAL) 101 101 101 COLLECTOR CURRENT, IC, (AMPERES) EMITTER CURRENT, IE, (AMPERES) 102 102 VCC = 1000V VGE = ±15V RG = 10Ω Tj = 150°C Inductive Load Eon Eoff Err REVERSE RECOVERY ENERGY, Err, (mJ) HALF-BRIDGE SWITCHING CHARACTERISTICS (INVERTER PART - TYPICAL) 102 101 VCC = 1000V VGE = ±15V IC = 75A Tj = 150°C Inductive Load Eon Eoff Err 100 100 101 102 GATE RESISTANCE, RG, (Ω) 9 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (INVERTER PART - MAXIMUM) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (BRAKE PART - TYPICAL) 100 4.5 10-1 Single Pulse TC = 25°C Per Unit Base = Rth(j-c) = 0.18 K/W (IGBT) Rth(j-c) = 0.27 K/W (FWDi) 10-2 10-3 COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) NORMALIZED TRANSIENT THERMAL IMPEDANCE, Zth(j-c') Zth = Rth • (NORMALIZED VALUE) CM75RX-34SA Six IGBT + Brake NX-Series Module 75 Amperes/1700 Volts 10-5 10-4 10-3 10-2 10-1 100 2.5 2.0 1.5 1.0 0.5 0 75 HALF-BRIDGE SWITCHING CHARACTERISTICS (BRAKE PART - TYPICAL) 104 101 Tj = 25°C Tj = 125°C Tj = 150°C 0 50 FREE-WHEEL DIODE FORWARD CHARACTERISTICS (BRAKE PART - TYPICAL) 103 100 25 TIME, (s) SWITCHING TIME, (ns) FORWARD VOLTAGE, VF, (VOLTS) (Chip) 3.0 COLLECTOR CURRENT, IC, (AMPERES) 102 1 2 3 4 5 FORWARD CURRENT IF, (AMPERES) 10 3.5 0 101 Tj = 25°C Tj = 125°C Tj = 150°C 4.0 6 VCC = 1000V VGE = ±15V RG = 13Ω Tj = 125°C Inductive Load 100 td(off) tf 102 101 100 100 td(on) tr 101 102 COLLECTOR CURRENT, IC, (AMPERES) 03/13 Rev. 0 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com CM75RX-34SA Six IGBT + Brake NX-Series Module 75 Amperes/1700 Volts HALF-BRIDGE SWITCHING CHARACTERISTICS (BRAKE PART - TYPICAL) SWITCHING TIME VS. GATE RESISTANCE (BRAKE - TYPICAL) 104 td(off) tf td(on) 102 tr 101 100 100 VCC = 1000V VGE = ±15V RG = 13Ω Tj = 150°C Inductive Load 101 VCC = 1000V VGE = ±15V IC = 50A Tj = 125°C Inductive Load 102 EXTERNAL GATE RESISTANCE, RG, (Ω) SWITCHING TIME VS. GATE RESISTANCE (BRAKE - TYPICAL) HALF-BRIDGE SWITCHING CHARACTERISTICS (BRAKE PART - TYPICAL) 103 td(off) td(on) tr 102 tf VCC = 1000V VGE = ±15V IC = 50A Tj = 150°C Inductive Load 102 EXTERNAL GATE RESISTANCE, RG, (Ω) 103 SWITCHING ENERGY, Eon, Eoff, (mJ) SWITCHING TIME, (ns) 102 tf COLLECTOR CURRENT, IC, (AMPERES) 103 03/13 Rev. 0 tr 101 101 102 104 101 101 td(off) td(on) 103 102 102 VCC = 1000V VGE = ±15V RG = 13Ω Tj = 125°C Inductive Load Eon Eoff Err 101 100 101 100 100 103 101 REVERSE RECOVERY ENERGY, Err, (mJ) 103 SWITCHING TIME, (ns) SWITCHING TIME, (ns) 104 10-1 102 COLLECTOR CURRENT, IC, (AMPERES) FORWARD CURRENT, IF, (AMPERES) 11 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com CM75RX-34SA Six IGBT + Brake NX-Series Module 75 Amperes/1700 Volts HALF-BRIDGE SWITCHING CHARACTERISTICS (BRAKE PART - TYPICAL) HALF-BRIDGE SWITCHING CHARACTERISTICS (BRAKE PART - TYPICAL) 101 100 101 100 100 102 SWITCHING ENERGY, Eon, Eoff, (mJ) REVERSE RECOVERY ENERGY, Err, (mJ) 102 102 VCC = 1000V VGE = ±15V RG = 13Ω Tj = 150°C Inductive Load Eon Eoff Err REVERSE RECOVERY ENERGY, Err, (mJ) SWITCHING ENERGY, Eon, Eoff, (mJ) 103 10-1 102 101 100 101 HALF-BRIDGE SWITCHING CHARACTERISTICS (BRAKE PART - TYPICAL) 103 EXTERNAL GATE RESISTANCE, RG, (Ω) 12 103 REVERSE RECOVERY, Irr (A), trr (ns) SWITCHING ENERGY, Eon, Eoff, (mJ) REVERSE RECOVERY ENERGY, Err, (mJ) VCC = 1000V VGE = ±15V IC/IF = 50A Tj = 150°C Inductive Load Eon Eoff Err 102 103 REVERSE RECOVERY CHARACTERISTICS (BRAKE PART - TYPICAL) 102 100 101 102 EXTERNAL GATE RESISTANCE, RG, (Ω) COLLECTOR CURRENT, IC, (AMPERES) FORWARD CURRENT, IF, (AMPERES) 101 VCC = 1000V VGE = ±15V IC/IF = 50A Tj = 125°C Inductive Load Eon Eoff Err 101 VCC = 1000V VGE = ±15V RG = 13Ω Tj = 125°C Inductive Load 102 101 100 Irr trr 101 102 FORWARD CURRENT, IF, (AMPERES) 03/13 Rev. 0 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com REVERSE RECOVERY CHARACTERISTICS (BRAKE PART - TYPICAL) REVERSE RECOVERY, Irr (A), trr (ns) 103 VCC = 1000V VGE = ±15V RG = 13Ω Tj = 150°C Inductive Load 102 101 100 Irr trr 101 FORWARD CURRENT, IF, (AMPERES) 03/13 Rev. 0 102 NORMALIZED TRANSIENT THERMAL IMPEDANCE, Zth(j-c') Zth = Rth • (NORMALIZED VALUE) CM75RX-34SA Six IGBT + Brake NX-Series Module 75 Amperes/1700 Volts TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (BRAKE PART - MAXIMUM) 100 10-1 Single Pulse TC = 25°C Per Unit Base = Rth(j-c) = 0.25 K/W (IGBT) Rth(j-c) = 0.35 K/W (FWDi) 10-2 10-3 10-5 10-4 10-3 10-2 10-1 100 101 TIME, (s) 13