POWEREX CM75MXA-24S

CM75MXA-24S
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272
www.pwrx.com
NX-Series CIB Module
(3Ø Converter + 3Ø Inverter + Brake)
75 Amperes/1200 Volts
A
AG
D
AJ
AK
AH
E
F
K
G
J
K
H
L
K
L
K
K
L
K
M
K
AA
AB
C
K
DETAIL "A"
Z
AN
53 52 51 50 49 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31
W
X
54
55
56
K
57
P
60
29
K28
K
61
U
V
AM
S
R
26
K
K
Q
27
L
L
58
59
30
K
B
AL
25
24
K23
AF
DETAIL "B"
1
2
3
4
5
K
T
6
7
8
K
L
9 10 11 12 13 14 15 16 17 18 19 20 21 22
K
L
K
K
K
L
K
P(54-56)
N (4 PLACES)
L
DETAIL "A"
AD
DETAIL "B"
Y
AC
Tolerance Otherwise Specified (mm)
Division of Dimension Tolerance
0.5 to 3
±0.2
over
3 to 6
±0.3
over
6 to 30
±0.5
over 30 to 120
±0.8
over 120 to 400
±1.2
The tolerance of size between
terminals is assumed to ±0.4
AE
P1(48-49)
ClampDi
FWDi
GUP(13)
GVP(18)
GWP(23)
U(14-15)
V(19-20)
W(24-25)
GUN(40)
GVN(33)
GWN(31)
TH1
(29)
B(52-53)
R
S
T
(1-2) (5-6) (9-10)
NTC
GB(41)
ConvDi
N(59-61)
TH2
(28)
N1(44-45)
E(32)
E*(39)
Caution: Each (two or three) pin terminal of P/N/P1/N1/U/V/W/B/R/S/T is connected in the module,
however, all three pins should be used for external wiring.
Outline Drawing and Circuit Diagram
Dimensions
A
B
C
D
E
F
G
H
J
K
L
M
N
P
Q
R
S
T
U
03/13 Rev. 3
Inches
4.79
2.44
0.51
4.49
4.33±0.02
3.89
3.72
0.16
0.51
0.15
0.45
0.9
0.22 Dia.
2.13
1.53
1.97±0.02
2.26
0.30
0.102 Dia.
Millimeters
121.7
62.0
13.0
114.05
110.0±0.5
99.0
94.5
4.06
13.09
3.81
11.43
22.86
5.5 Dia.
54.2
39.0
50.0±0.5
57.5
7.75
2.6 Dia.
Dimensions
V
W
X
Y
Z
AA
AB
AC
AD
AE
AF
AG
AH
AJ
AK
AL
AM
AN
Inches
0.088 Dia.
0.46
0.16
0.59
0.27
0.81
0.67
0.12
0.14
0.03
0.15
0.05
0.025
0.29
0.05
0.49
0.12
0.17 Dia.
Millimeters
2.25 Dia.
11.66
4.2
15.0
7.0
20.5
17.0
3.0
3.5
0.8
3.75
1.15
0.65
7.4
1.2
12.5
3.0
4.3 Dia.
Description:
CIBs are low profile and thermally
efficient. Each module consists of
a three-phase diode converter section, a three-phase inverter section
and a brake circuit. A thermistor is
included in the package for sensing the baseplate temperature. 6th
Generation CSTBT chips yield low
loss.
Features:
£ Low Drive Power
£ Low VCE(sat)
£ Discrete Super-Fast Recovery
Free-Wheel Diode
£ Isolated Baseplate for Easy
Heat Sinking
Applications:
£ AC Motor Control
£ Motion/Servo Control
£ Photovoltaic/Fuel Cell
Ordering Information:
Example: Select the complete
module number you desire from
the table below -i.e.
CM75MXA-24S is a 1200V (VCES),
75 Ampere CIB Power Module.
Type
Current Rating
Amperes
VCES
Volts (x 50)
CM75 24
1
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
CM75MXA-24S
NX-Series CIB Module
(3Ø Converter + 3Ø Inverter + Brake)
75 Amperes/1200 Volts
Absolute Maximum Ratings, Tj = 25°C unless otherwise specified
Inverter Part IGBT/FWDi
Characteristics
SymbolRating Units
Collector-Emitter Voltage (VGE = 0V)
VCES1200 Volts
Gate-Emitter Voltage (VCE = 0V)
VGES±20 Volts
Collector Current (DC, TC = 122°C)*2,*4IC
Collector Current (Pulse,
75Amperes
Repetitive)*3I
CRM 150Amperes
Total Power Dissipation (TC = 25°C)*2,*4Ptot 600Watts
Emitter Current*2 IE*1
75Amperes
Emitter Current (Pulse, Repetitive)*3 IERM*1 150Amperes
Maximum Junction Temperature, Instantaneous Event (Overload)
Tj(max)175 °C
Brake Part IGBT/ClampDi
Characteristics
SymbolRating Units
Collector-Emitter Voltage (VGE = 0V)
VCES1200 Volts
Gate-Emitter Voltage (VCE = 0V)
VGES±20 Volts
Collector Current (DC, TC = 125°C)*2,*4IC
50Amperes
Collector Current (Pulse, Repetitive)*3ICRM 100Amperes
Total Power Dissipation (TC = 25°C)*2,*4Ptot 425Watts
Repetitive Peak Reverse Voltage (VGE = 0V)
Forward
Current*2
VRRM1200 Volts
IF*1
50Amperes
110.9
93.3
71.3
18.2
0
102.9
Tj(max)175 °C
0
0
53 52 51 50 49 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31
Di
Br
59
47.0
48.0
CR CR
SN TN
2
24.5
0
1
CR CR
SP TP
3
4
5
6
7
8
17.2
30
Th
29
28
27
26
25
24
23
19.4
24.6
25.6
35.9
42.5
46.2
9 10 11 12 13 14 15 16 17 18 19 20 21 22
46.8
CR
RP
Tr
WN
Di
Tr WP
Tr Di Tr Di WP
UP UP VP VP
60
61
Tr Di
VN WN
108.8
CR
RN
58
Di
VN
Tr
UN
99.3
57
Di
UN
90.8
31.2
32.6
Tr
Br
56
82.4
55
72.9
54
64.5
15.2
18.1
36.4
*1 Represent ratings and characteristics of the anti-parallel, emitter-to-collector free wheeling
diode (FWDi).
*2 Junction temperature (Tj) should not increase beyond maximum junction
temperature (Tj(max)) rating.
*3 Pulse width and repetition rate should be such that device junction temperature (Tj)
does not exceed Tj(max) rating.
*4 Case temperature (TC) and heatsink temperature (Ts) is measured on the surface
(mounting side) of the baseplate and the heatsink side just under the chips.
Refer to the figure to the right for chip location.
The heatsink thermal resistance should be measured just under the chips.
83.5
Maximum Junction Temperature, Instantaneous Event (Overload)
33.9
IFRM*1 100Amperes
26.0
Forward Current (Pulse, Repetitive)*3 LABEL SIDE
Each mark points to the center position of each chip.
Tr*P / Tr*N / TrBr (* = U/V/W): IGBT
DiBr: Clamp Di
Th: NTC Thermistor
2
Di*P / Di*N (* = U/V/W): FWDi
CR*P / CR*N (* = R/S/T): Conv Di
03/13 Rev. 3
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
CM75MXA-24S
NX-Series CIB Module
(3Ø Converter + 3Ø Inverter + Brake)
75 Amperes/1200 Volts
Absolute Maximum Ratings, Tj = 25°C unless otherwise specified
Converter Part ConvDi
Characteristics
SymbolRating Units
Repetitive Peak Reverse Voltage (VGE = 0V)
VRRM1600 Volts
Recommended AC Input Voltage (RMS)
Ea 480Volts
DC Output Current (3-Phase Full Wave Rectifying, TC = 125°C)*4IO
Surge Forward Current (Sine Half Wave 1 Cycle Peak Value, f = 60Hz, Non-repetative)
75Amperes
IFSM 75Amperes
I2t 2340A2s
Current Square Time (Value for One Cycle of Surge Current)
Maximum Junction Temperature, Instantaneous Event (Overload)
Tj(max)150 °C
Module
Characteristics
SymbolRating Units
Isolation Voltage (Terminals to Baseplate, RMS, f = 60Hz, AC 1 minute)
VISO2500Volts
°C
-40 to +125
°C
110.9
71.3
18.2
0
*4 Case temperature (TC) and heatsink temperature (Ts) is measured on the surface
(mounting side) of the baseplate and the heatsink side just under the chips.
Refer to the figure to the right for chip location.
The heatsink thermal resistance should be measured just under the chips.
93.3
-40 to +150
Tstg
102.9
Tj(op)
Storage Temperature
83.5
Operating Junction Temperature, Continuous Operation (Under Switching)
33.9
°C
26.0
Maximum Case Temperature*4TC(max)125
0
0
53 52 51 50 49 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31
Di
Br
59
47.0
48.0
CR CR
SN TN
3
4
5
6
7
8
17.2
30
Th
29
28
27
26
25
24
23
19.4
24.6
25.6
35.9
42.5
46.2
9 10 11 12 13 14 15 16 17 18 19 20 21 22
46.8
2
24.5
0
1
CR CR
SP TP
36.4
CR
RP
Tr
WN
Di
Tr WP
Tr Di Tr Di WP
UP UP VP VP
60
61
Tr Di
VN WN
108.8
CR
RN
58
Di
VN
Tr
UN
99.3
57
Di
UN
90.8
31.2
32.6
Tr
Br
56
82.4
55
72.9
54
64.5
15.2
18.1
LABEL SIDE
Each mark points to the center position of each chip.
Tr*P / Tr*N / TrBr (* = U/V/W): IGBT
DiBr: Clamp Di
Th: NTC Thermistor
03/13 Rev. 3
Di*P / Di*N (* = U/V/W): FWDi
CR*P / CR*N (* = R/S/T): Conv Di
3
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
CM75MXA-24S
NX-Series CIB Module
(3Ø Converter + 3Ø Inverter + Brake)
75 Amperes/1200 Volts
Electrical Characteristics, Tj = 25°C unless otherwise specified
Inverter Part IGBT/FWDi
Characteristics
Symbol
Test Conditions
Min.
Typ.
Max.
Units
Collector-Emitter Cutoff Current
ICES
VCE = VCES, VGE = 0V
—
—
1.0
mA
Gate-Emitter Leakage Current
IGES
VGE = VGES, VCE = 0V
—
—
0.5
µA
Gate-Emitter Threshold Voltage
VGE(th)
IC = 7.5mA, VCE = 10V
5.4
6.0
6.6
Volts
Collector-Emitter Saturation Voltage
VCE(sat)
IC = 75A, VGE = 15V, Tj = 25°C*6
—
1.80
2.25
Volts
(Terminal)
IC = 75A, VGE = 15V, Tj = 125°C*6
—
2.00
—
Volts
IC = 75A, VGE = 15V, Tj = 150°C*6
—2.05
—
Volts
Collector-Emitter Saturation Voltage
VCE(sat)
IC = 75A, VGE = 15V, Tj = 25°C*6
—
1.70
2.15
Volts
(Chip)
IC = 75A, VGE = 15V, Tj = 125°C*6
—
1.90
—
Volts
—1.95
—
Volts
—
—
7.5
nF
—
—
1.5
nF
—
—
0.13
nF
—
175
—
nC
—
—
300
ns
IC = 75A, VGE = 15V, Tj =
Input Capacitance
Cies
Output Capacitance
Coes
Reverse Transfer Capacitance
Cres
Gate Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Emitter-Collector Voltage
Emitter-Collector Voltage
QG
150°C*6
VCE = 10V, VGE = 0V
VCC = 600V, IC = 75A, VGE = 15V
td(on)
tr
VCC = 600V, IC = 75A, VGE = ±15V,
—
—
200
ns
td(off)
RG = 8.2Ω, Inductive Load
—
—
600
ns
—
—
300
ns
VEC*1
tf
IE = 75A, VGE = 0V, Tj = 25°C*6
—
1.80
2.25
Volts
(Terminal)
IE = 75A, VGE = 0V, Tj = 125°C*6
—
1.80
—
Volts
IE = 75A, VGE = 0V, Tj = 150°C*6
—
1.80
—
Volts
VEC
IE = 75A, VGE = 0V, Tj =
25°C*6
—
1.70
2.15
Volts
(Chip)
IE = 75A, VGE = 0V, Tj = 125°C*6
—
1.70
—
Volts
*1
IE = 75A, VGE = 0V, Tj =
150°C*6
—
1.70
—
Volts
VCC = 600V, IE = 75A, VGE = ±15V
—
—
300
ns
Reverse Recovery Charge
*1
Qrr
RG = 8.2Ω, Inductive Load
—
4.0
—
µC
Turn-on Switching Energy per Pulse
Eon
VCC = 600V, IC = IE = 75A,
—
7.3
—
mJ
Reverse Recovery Time
trr*1
Turn-off Switching Energy per Pulse
Eoff
VGE = ±15V, RG = 8.2Ω,
—
8.0
—
mJ
Reverse Recovery Energy per Pulse
Err*1
Tj = 150°C, Inductive Load
—
6.9
—
mJ
Main Terminals-Chip,
—
—
4.0
mΩ
—
0
—
Ω
Internal Lead Resistance
RCC' + EE'
110.9
93.3
102.9
71.3
33.9
26.0
Per Switch
18.2
0
0
53 52 51 50 49 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31
CR
RN
58
59
Tr
UN
CR CR
SN TN
2
24.5
0
1
CR CR
SP TP
3
4
5
6
7
8
Th
29
28
27
26
25
24
23
19.4
24.6
25.6
35.9
42.5
46.2
9 10 11 12 13 14 15 16 17 18 19 20 21 22
46.8
CR
RP
17.2
30
Di
Tr WP
Tr Di Tr Di WP
UP UP VP VP
60
61
Tr Di
VN WN
Tr
WN
108.8
57
Di
VN
99.3
56
47.0
48.0
Di
UN
Di
Br
90.8
31.2
32.6
Tr
Br
82.4
55
72.9
54
64.5
15.2
18.1
36.4
rg
*1 Represent ratings and characteristics of the anti-parallel, emitter-to-collector free wheeling
diode (FWDi).
*4 Case temperature (TC) and heatsink temperature (Ts) is measured on the surface
(mounting side) of the baseplate and the heatsink side just under the chips.
Refer to the figure to the right for chip location.
The heatsink thermal resistance should be measured just under the chips.
*6 Pulse width and repetition rate should be such as to cause negligible temperature rise.
0
Internal Gate Resistance
83.5
Per Switch,TC = 25°C*4
LABEL SIDE
Each mark points to the center position of each chip.
Tr*P / Tr*N / TrBr (* = U/V/W): IGBT
DiBr: Clamp Di
Th: NTC Thermistor
4
Di*P / Di*N (* = U/V/W): FWDi
CR*P / CR*N (* = R/S/T): Conv Di
03/13 Rev. 3
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
CM75MXA-24S
NX-Series CIB Module
(3Ø Converter + 3Ø Inverter + Brake)
75 Amperes/1200 Volts
Electrical Characteristics, Tj = 25°C unless otherwise specified
Brake Part IGBT/ClampDi
Characteristics
Symbol
Test Conditions
Min.
Typ.
Max.
Units
Collector-Emitter Cutoff Current
ICES
VCE = VCES, VGE = 0V
—
—
1.0
mA
Gate-Emitter Leakage Current
IGES
VGE = VGES, VCE = 0V
—
—
0.5
µA
Gate-Emitter Threshold Voltage
VGE(th)
IC = 5mA, VCE = 10V
5.4
6.0
6.6
Volts
Collector-Emitter Saturation Voltage
VCE(sat)
IC = 50A, VGE = 15V, Tj = 25°C*6
—
1.80
2.25
Volts
(Terminal)
IC = 50A, VGE = 15V, Tj = 125°C*6
—
2.00
—
Volts
IC = 50A, VGE = 15V, Tj = 150°C*6
—2.05
—
Volts
Collector-Emitter Saturation Voltage
VCE(sat)
IC = 50A, VGE = 15V, Tj = 25°C*6
—
1.70
2.15
Volts
(Chip)
IC = 50A, VGE = 15V, Tj = 125°C*6
—
1.90
—
Volts
—1.95
—
Volts
—
—
5.0
nF
—
—
1.0
nF
—
—
0.08
nF
—
117
—
nC
—
—
300
ns
IC = 50A, VGE = 15V, Tj =
Input Capacitance
Cies
Output Capacitance
Coes
Reverse Transfer Capacitance
Cres
Gate Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Forward Voltage
Forward Voltage
QG
VCE = 10V, VGE = 0V
VCC = 600V, IC = 50A, VGE = 15V
td(on)
tr
VCC = 600V, IC = 50A, VGE = ±15V,
—
—
200
ns
td(off)
RG = 13Ω, Inductive Load
—
—
600
ns
—
—
300
ns
VF
tf
IE = 50A, VGE = 0V, Tj = 25°C*6
—
1.80
2.25
Volts
(Terminal)
IE = 50A, VGE = 0V, Tj = 125°C*6
—
1.80
—
Volts
IE = 50A, VGE = 0V, Tj = 150°C*6
—
1.80
—
Volts
25°C*6
—
1.70
2.15
Volts
IE = 50A, VGE = 0V, Tj = 125°C*6
—
1.70
—
Volts
VF
(Chip)
IE = 50A, VGE = 0V, Tj =
IE = 50A, VGE = 0V, Tj =
Reverse Recovery Time
150°C*6
trr
150°C*6
—
1.70
—
Volts
VCC = 600V, IE = 50A, VGE = ±15V
—
—
300
ns
Reverse Recovery Charge
Qrr
RG = 13Ω, Inductive Load
—
2.7
—
µC
Turn-on Switching Energy per Pulse
Eon
VCC = 600V, IC = IE = 50A,
—
5.5
—
mJ
Turn-off Switching Energy per Pulse
Eoff
VGE = ±15V, RG = 13Ω,
—
5.3
—
mJ
Reverse Recovery Energy per Pulse
Err
Tj = 150°C, Inductive Load
—
4.5
—
mJ
Internal Gate Resistance
rg
—
0
—
Ω
*6 Pulse width and repetition rate should be such as to cause negligible temperature rise.
03/13 Rev. 3
5
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
CM75MXA-24S
NX-Series CIB Module
(3Ø Converter + 3Ø Inverter + Brake)
75 Amperes/1200 Volts
Electrical Characteristics, Tj = 25°C unless otherwise specified (continued)
Converter Part ConvDi
Characteristics
Repetitive Peak Reverse Current
Forward Voltage
Symbol
Test Conditions
Min.
Typ.
Max.
Units
IRRM
VR = VRRM, Tj = 150°C
—
—
20
mA
VF
IF = 75A*6
—
1.2
1.6
Volts
Test Conditions
Min.
Typ.
Max.
Units
4.855.00
5.15
kΩ
-7.3
+7.8
%
(Terminal)
NTC Thermistor Part
Characteristics
Symbol
Zero Power Resistance
R25
Deviation of Resistance
∆R/R
B Constant
B(25/50)
TC =
25°C*4
TC = 100°C*4, R100 = 493Ω
—3375
—
K
P25
TC = 25°C*4
—
—
10
mW
Thermal Resistance, Junction to Case*4
Rth(j-c)Q
Per Inverter IGBT
—
—
0.25
K/W
Thermal Resistance, Junction to
Case*4
Rth(j-c)D
Per Inverter FWDi
—
—
0.40
K/W
Thermal Resistance, Junction to
Case*4
Rth(j-c)Q
Per Brake IGBT
—
—
0.35
K/W
Thermal Resistance, Junction to Case*4
Rth(j-c)D
Per Brake ClampDi
—
—
0.63
K/W
Case*4
Rth(j-c)D
Per Converter ConvDi
—
—
0.24
K/W
Rth(c-f)
Thermal Grease Applied,
—
15
—
K/kW
Power Dissipation
Approximate by
Equation*7
—
Thermal Resistance Characteristics
110.9
93.3
102.9
83.5
71.3
33.9
26.0
0
0
53 52 51 50 49 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31
Di
Br
58
59
47.0
48.0
CR CR
SN TN
CR
RP
2
24.5
0
1
CR CR
SP TP
3
4
5
6
7
8
Tr
WN
17.2
30
Th
29
28
27
Di
Tr WP
Tr Di Tr Di WP
UP UP VP VP
60
61
Tr Di
VN WN
26
25
24
23
19.4
24.6
25.6
35.9
42.5
46.2
9 10 11 12 13 14 15 16 17 18 19 20 21 22
108.8
CR
RN
Di
VN
Tr
UN
99.3
57
Di
UN
90.8
Tr
Br
56
82.4
55
72.9
54
31.2
32.6
64.5
15.2
18.1
46.8
*4 Case temperature (TC) and heatsink temperature (Ts) is measured on the surface
(mounting side) of the baseplate and the heatsink side just under the chips.
Refer to the figure to the right for chip location.
The heatsink thermal resistance should be measured just under the chips.
*6 Pulse width and repetition rate should be such as to cause negligible temperature rise.
R25
1
1
*7 B(25/50) = In(
)/(
–
)
R50 T25 T50
R25; Resistance at Absolute Temperature T25 [K]; T25 = 25 [°C] + 273.15 = 298.15 [K]
R50; Resistance at Absolute Temperature T50 [K]; T50 = 50 [°C] + 273.15 = 323.15 [K]
*8 Typical value is measured by using thermally conductive grease of λ = 0.9 [W/(m • K)].
Per 1 Module*8
36.4
Case to Heatsink*4
18.2
Contact Thermal Resistance,
0
Thermal Resistance, Junction to
LABEL SIDE
Each mark points to the center position of each chip.
Tr*P / Tr*N / TrBr (* = U/V/W): IGBT
DiBr: Clamp Di
Th: NTC Thermistor
6
Di*P / Di*N (* = U/V/W): FWDi
CR*P / CR*N (* = R/S/T): Conv Di
03/13 Rev. 3
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
CM75MXA-24S
NX-Series CIB Module
(3Ø Converter + 3Ø Inverter + Brake)
75 Amperes/1200 Volts
MechanicalCharacteristics, Tj = 25°C unless otherwise specified
Characteristics
Symbol
Test Conditions
Min.
Typ.
Max.
Units
Mounting Torque
Ms
Mounting to Heatsink, M5 Screw
22
27
31
in-lb
Creepage Distance
ds
Terminal to Terminal
6.47
—
—
mm
Terminal to Baseplate
14.27
—
—
mm
Clearance
da
Weight
m
Flatness of Baseplate
ec
Terminal to Terminal
6.47
—
—
mm
Terminal to Baseplate
12.33
—
—
mm
On Centerline X, Y*5
±0
—
±100
µm
Applied Across P-N/P1-N1 Terminals
—
600
850
Volts
13.515.0
16.5
Volts
300
g
Recommended Operating Conditons, Ta = 25°C
DC Supply Voltage
VCC
Gate-Emitter Drive Voltage
VGE(on)
Applied Across GB-Es1/
G*P-*/G*N-Es (* = U, V, W) Terminals
External Gate Resistance
RG
Per Switch Inverter IGBT
8.2
—
82
Ω
Per Switch Brake IGBT
13
—
130
Ω
– : CONCAVE
+ : CONVEX
*5 Baseplate (mounting side) flatness measurement points (X, Y) are shown in the figure below.
MOUNTING SIDE
MOUNTING SIDE
03/13 Rev. 3
Y
MOUNTING
SIDE
X
– : CONCAVE
+ : CONVEX
7
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
CM75MXA-24S
NX-Series CIB Module
(3Ø Converter + 3Ø Inverter + Brake)
75 Amperes/1200 Volts
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(INVERTER PART - TYPICAL)
OUTPUT CHARACTERISTICS
(INVERTER PART - TYPICAL)
125
15
Tj = 25°C
12
100
11
75
50
10
25
9
0
0
2
4
6
8
COLLECTOR-EMITTER
SATURATION VOLTAGE, VCE(sat), (VOLTS)
3.0
2.5
2.0
1.5
1.0
0.5
0
10
Tj = 25°C
Tj = 125°C
Tj = 150°C
25
0
50
75
100
125
COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)
COLLECTOR CURRENT, IC, (AMPERES)
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(INVERTER PART - TYPICAL)
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(INVERTER PART - TYPICAL)
Tj = 25°C
8
IC = 150A
6
IC = 75A
4
IC = 30A
2
0
150
103
10
6
8
10
12
14
16
18
GATE-EMITTER VOLTAGE, VGE, (VOLTS)
8
3.5
COLLECTOR-EMITTER
SATURATION VOLTAGE, VCE(sat), (VOLTS)
VGE = 20V
13.5
EMITTER CURRENT, IE, (AMPERES)
COLLECTOR CURRENT, IC, (AMPERES)
150
20
Tj = 25°C
Tj = 125°C
Tj = 150°C
102
101
0.5
1.0
1.5
2.0
2.5
3.0
EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS)
03/13 Rev. 3
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
CM75MXA-24S
NX-Series CIB Module
(3Ø Converter + 3Ø Inverter + Brake)
75 Amperes/1200 Volts
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(INVERTER PART - TYPICAL)
CAPACITANCE VS. VCE
(INVERTER PART - TYPICAL)
103
VGE = 0V
101
100
Coes
10-1
Cres
10-2
10-1
tf
100
101
102
td(on)
101
100
100
102
101
102
COLLECTOR CURRENT, IC, (AMPERES)
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(INVERTER PART - TYPICAL)
SWITCHING TIME VS.
GATE RESISTANCE
(INVERTER PART - TYPICAL)
103
td(off)
SWITCHING TIME, (ns)
tf
SWITCHING TIME, (ns)
VCC = 600V
tr
VGE = ±15V
RG = 8.2Ω
Tj = 125°C
Inductive Load
COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)
103
102
td(on)
101
100
100
VCC = 600V
tr
VGE = ±15V
RG = 8.2Ω
Tj = 150°C
Inductive Load
VCC = 600V
VGE = ±15V
IC = 75A
Tj = 125°C
Inductive Load
td(off)
tf
102
td(on)
tr
101
COLLECTOR CURRENT, IC, (AMPERES)
03/13 Rev. 3
td(off)
Cies
SWITCHING TIME, (ns)
CAPACITANCE, Cies, Coes, Cres, (nF)
102
102
101
100
101
102
EXTERNAL GATE RESISTANCE, RG, (Ω)
9
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
CM75MXA-24S
NX-Series CIB Module
(3Ø Converter + 3Ø Inverter + Brake)
75 Amperes/1200 Volts
SWITCHING TIME VS.
GATE RESISTANCE
(INVERTER PART - TYPICAL)
VCC = 600V
VGE = ±15V
IC = 75A
Tj = 150°C
Inductive Load
103
td(off)
REVERSE RECOVERY, Irr (A), trr (ns)
SWITCHING TIME, (ns)
103
REVERSE RECOVERY CHARACTERISTICS
(INVERTER PART - TYPICAL)
tf
102
td(on)
tr
101
100
102
101
102
EXTERNAL GATE RESISTANCE, RG, (Ω)
EMITTER CURRENT, IE, (AMPERES)
REVERSE RECOVERY CHARACTERISTICS
(INVERTER PART - TYPICAL)
GATE CHARGE VS. VGE
(INVERTER PART)
20
VCC = 600V
VGE = ±15V
RG = 8.2Ω
Tj = 150°C
Inductive Load
Irr
trr
101
100
101
EMITTER CURRENT, IE, (AMPERES)
10
102
101
100
102
GATE-EMITTER VOLTAGE, VGE, (VOLTS)
REVERSE RECOVERY, Irr (A), trr (ns)
103
101
VCC = 600V
VGE = ±15V
RG = 8.2Ω
Tj = 125°C
Inductive Load
Irr
trr
102
IC = 75A
VCC = 600V
16
12
8
4
0
0
50
100
150
200
250
GATE CHARGE, QG, (nC)
03/13 Rev. 3
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
CM75MXA-24S
NX-Series CIB Module
(3Ø Converter + 3Ø Inverter + Brake)
75 Amperes/1200 Volts
HALF-BRIDGE SWITCHING
CHARACTERISTICS
(INVERTER PART - TYPICAL)
10-1
100
101
101
SWITCHING ENERGY, Eon, Eoff, (mJ)
100
101
102
VCC = 600V
VGE = ±15V
RG = 8.2Ω
Tj = 125°C
Inductive Load
Eon
Eoff
Err
REVERSE RECOVERY ENERGY, Err, (mJ)
SWITCHING ENERGY, Eon, Eoff, (mJ)
101
100
10-1
100
100
102
SWITCHING ENERGY, Eon, Eoff, (mJ)
REVERSE RECOVERY ENERGY, Err, (mJ)
SWITCHING ENERGY, Eon, Eoff, (mJ)
REVERSE RECOVERY ENERGY, Err, (mJ)
102
VCC = 600V
VGE = ±15V
IC = 75A
Tj = 125°C
Inductive Load
Eon
Eoff
Err
100
100
101
GATE RESISTANCE, RG, (Ω)
03/13 Rev. 3
101
100
102
HALF-BRIDGE SWITCHING
CHARACTERISTICS
(INVERTER PART - TYPICAL)
HALF-BRIDGE SWITCHING
CHARACTERISTICS
(INVERTER PART - TYPICAL)
101
101
COLLECTOR CURRENT, IC, (AMPERES)
EMITTER CURRENT, IE, (AMPERES)
COLLECTOR CURRENT, IC, (AMPERES)
EMITTER CURRENT, IE, (AMPERES)
102
102
VCC = 600V
VGE = ±15V
RG = 8.2Ω
Tj = 150°C
Inductive Load
Eon
Eoff
Err
REVERSE RECOVERY ENERGY, Err, (mJ)
HALF-BRIDGE SWITCHING
CHARACTERISTICS
(INVERTER PART - TYPICAL)
102
101
VCC = 600V
VGE = ±15V
IC = 75A
Tj = 150°C
Inductive Load
Eon
Eoff
Err
100
100
101
102
GATE RESISTANCE, RG, (Ω)
11
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(INVERTER PART - MAXIMUM)
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(BRAKE PART - TYPICAL)
100
3.5
10-1
Single Pulse
TC = 25°C
Per Unit Base =
Rth(j-c) =
0.25°K/W
(IGBT)
Rth(j-c) =
0.40°K/W
(FWDi)
10-2
10-3
COLLECTOR-EMITTER
SATURATION VOLTAGE, VCE(sat), (VOLTS)
NORMALIZED TRANSIENT THERMAL IMPEDANCE, Zth(j-c')
Zth = Rth • (NORMALIZED VALUE)
CM75MXA-24S
NX-Series CIB Module
(3Ø Converter + 3Ø Inverter + Brake)
75 Amperes/1200 Volts
10-5 10-4
10-3
10-2
10-1
100
1.5
1.0
0.5
0
25
50
75
100
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(BRAKE PART - TYPICAL)
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(BRAKE PART - TYPICAL)
103
SWITCHING TIME, (ns)
FORWARD VOLTAGE, VF, (VOLTS)
2.0
TIME, (s)
101
Tj = 25°C
Tj = 125°C
Tj = 150°C
1.0
1.5
2.0
FORWARD CURRENT IF, (AMPERES)
12
2.5
COLLECTOR CURRENT, IC, (AMPERES)
102
100
0.5
3.0
0
101
Tj = 25°C
Tj = 125°C
Tj = 150°C
2.5
102
VCC = 600V
VGE = ±15V
RG = 13Ω
Tj = 125°C
Inductive Load
tf
td(off)
td(on)
tr
101
100
100
101
102
COLLECTOR CURRENT, IC, (AMPERES)
03/13 Rev. 3
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
CM75MXA-24S
NX-Series CIB Module
(3Ø Converter + 3Ø Inverter + Brake)
75 Amperes/1200 Volts
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(BRAKE PART - TYPICAL)
103
VCC = 600V
VGE = ±15V
RG = 13Ω
Tj = 150°C
Inductive Load
102
td(off)
tf
SWITCHING TIME, (ns)
SWITCHING TIME, (ns)
103
SWITCHING TIME VS.
GATE RESISTANCE
(BRAKE - TYPICAL)
td(on)
tr
101
100
100
101
td(on)
VCC = 600V
VGE = ±15V
IC = 50A
Tj = 125°C
Inductive Load
102
COLLECTOR CURRENT, IC, (AMPERES)
EXTERNAL GATE RESISTANCE, RG, (Ω)
SWITCHING TIME VS.
GATE RESISTANCE
(BRAKE - TYPICAL)
HALF-BRIDGE SWITCHING
CHARACTERISTICS
(BRAKE PART - TYPICAL)
tr
td(off)
102
td(on)
VCC = 600V
VGE = ±15V
IC = 50A
Tj = 150°C
Inductive Load
102
EXTERNAL GATE RESISTANCE, RG, (Ω)
103
SWITCHING ENERGY, Eon, Eoff, (mJ)
REVERSE RECOVERY ENERGY, Err, (mJ)
tf
SWITCHING TIME, (ns)
102
101
101
101
tr
td(off)
101
101
102
103
03/13 Rev. 3
tf
100
103
VCC = 600V
VGE = ±15V
RG = 13Ω
Tj = 125°C
Inductive Load
Eon
Eoff
Err
10-1
100
101
102
COLLECTOR CURRENT, IC, (AMPERES)
FORWARD CURRENT, IF, (AMPERES)
13
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
CM75MXA-24S
NX-Series CIB Module
(3Ø Converter + 3Ø Inverter + Brake)
75 Amperes/1200 Volts
HALF-BRIDGE SWITCHING
CHARACTERISTICS
(BRAKE PART - TYPICAL)
HALF-BRIDGE SWITCHING
CHARACTERISTICS
(BRAKE PART - TYPICAL)
100
102
VCC = 600V
VGE = ±15V
RG = 13Ω
Tj = 150°C
Inductive Load
Eon
Eoff
Err
10-1
100
SWITCHING ENERGY, Eon, Eoff, (mJ)
REVERSE RECOVERY ENERGY, Err, (mJ)
SWITCHING ENERGY, Eon, Eoff, (mJ)
REVERSE RECOVERY ENERGY, Err, (mJ)
101
101
100
101
102
HALF-BRIDGE SWITCHING
CHARACTERISTICS
(BRAKE PART - TYPICAL)
103
EXTERNAL GATE RESISTANCE, RG, (Ω)
14
103
REVERSE RECOVERY, Irr (A), trr (ns)
SWITCHING ENERGY, Eon, Eoff, (mJ)
REVERSE RECOVERY ENERGY, Err, (mJ)
VCC = 600V
VGE = ±15V
IC/IF = 50A
Tj = 150°C
Inductive Load
Eon
Eoff
Err
102
103
REVERSE RECOVERY CHARACTERISTICS
(BRAKE PART - TYPICAL)
102
100
101
102
EXTERNAL GATE RESISTANCE, RG, (Ω)
COLLECTOR CURRENT, IC, (AMPERES)
FORWARD CURRENT, IF, (AMPERES)
101
VCC = 600V
VGE = ±15V
IC/IF = 50A
Tj = 125°C
Inductive Load
Eon
Eoff
Err
101
VCC = 600V
VGE = ±15V
RG = 13Ω
Tj = 125°C
Inductive Load
102
101
100
Irr
trr
101
102
FORWARD CURRENT, IF, (AMPERES)
03/13 Rev. 3
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
REVERSE RECOVERY CHARACTERISTICS
(BRAKE PART - TYPICAL)
REVERSE RECOVERY, Irr (A), trr (ns)
103
VCC = 600V
VGE = ±15V
RG = 13Ω
Tj = 150°C
Inductive Load
102
Irr
trr
101
100
101
102
NORMALIZED TRANSIENT THERMAL IMPEDANCE, Zth(j-c')
Zth = Rth • (NORMALIZED VALUE)
CM75MXA-24S
NX-Series CIB Module
(3Ø Converter + 3Ø Inverter + Brake)
75 Amperes/1200 Volts
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(BRAKE PART - MAXIMUM)
100
10-1
Single Pulse
TC = 25°C
Per Unit Base =
Rth(j-c) =
0.35°K/W
(IGBT)
Rth(j-c) =
0.63°K/W
(FWDi)
10-2
10-3
10-5 10-4
10-3
FORWARD CURRENT, IF, (AMPERES)
101
Tj = 25°C
Tj = 125°C
0.8
1.0
1.2
1.4
FORWARD VOLTAGE, VF, (VOLTS)
03/13 Rev. 3
1.6
NORMALIZED TRANSIENT THERMAL IMPEDANCE, Zth(j-c')
Zth = Rth • (NORMALIZED VALUE)
FORWARD CURRENT IF, (AMPERES)
102
0.6
10-1
100
101
TIME, (s)
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(CONVERTER PART - TYPICAL)
100
0.4
10-2
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(CONVERTER PART - MAXIMUM)
100
10-1
10-2
10-3
Single Pulse
TC = 25°C
Per Unit Base =
Rth(j-c) =
0.24°K/W
10-5 10-4
10-3
10-2
10-1
100
101
TIME, (s)
15