Single IGBTMOD™ NX-Series Module CM400HX-24A

CM400HX-24A
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272
Single IGBTMOD™
NX-Series Module
400 Amperes/1200 Volts
A
D
E
J
F
J
G
Y
(4 PLACES)
AD
AE
AF
H
46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25
Q
ST
47
U
24
Z
R
S T
Q
48
U
AA B
AB
23
DETAIL "B"
1
W
V
X
M
L
2
K
3
4
5
6
7
8
AG
9 10 11 12 13 14 15 16 17 18 19 20 21 22
N
P
K
L
DETAIL "A"
AL
AM
AK
AT
AU
E(24) E(23)
AV
C
AR
AS
AP
C(22)
AW
AN
E1(16)
AX
G1(15)
C(47) C(48)
AQ
DETAIL "A"
Th
NTC
DETAIL "B"
AJ
AH
AC (4 PLACES)
TH1
(1)
*ALL PIN DIMENSIONS WITHIN
A TOLERANCE OF ±0.5
TH2
(2)
Outline Drawing and Circuit Diagram
Dimensions
A
B
C
D
E
F
G
H
J
K
L
M
N
P
Q
R
S
T
U
V
W
X
Y
Rev. 3/09
Inches
Millimeters
Dimensions
5.98
2.44
0.67
5.39
4.79
4.33±0.02
3.89
3.72
0.53
0.15
0.28
0.30
1.95
0.9
0.55
0.87
0.67
0.48
0.24
0.16
0.37
0.83
M6
152.0
62.0
17.0
137.0
121.7
110.0±0.5
99.0
94.5
13.5
3.8
7.25
7.75
49.54
22.86
14.0
22.0
17.0
12.0
6.0
4.2
6.5
21.14
M6
Z
AA
AB
AC
AD
AE
AF
AG
AH
AJ
AK
AL
AM
AN
AP
AQ
AR
AS
AT
AU
AV
AW
AX
Inches
Millimeters
1.53
39.0
1.97±0.02
50.0±0.5
2.26
57.5
0.22 Dia.
5.5 Dia.
0.67+0.04/-0.0217.0+1.0/-0.5
0.51
13.0
0.27
7.0
0.03
0.8
0.81
20.5
0.12
3.0
0.14
3.5
0.21
5.4
0.49
12.5
0.15
3.81
0.05
1.15
0.025
0.65
0.29
7.4
0.24
6.2
0.17 Dia.
4.3 Dia.
0.10 Dia.
2.5 Dia.
0.08 Dia.
2.1 Dia.
0.06
1.5
0.49
12.5
Description:
Powerex IGBTMOD™ Modules
are designed for use in switching
applications. Each module
consists of one IGBT Transistor in a single configuration with
a reverse connected super-fast
recovery free-wheel diode. All
components and interconnects
are isolated from the heat sinking
baseplate, offering simplified
system assembly and thermal
management.
Features:
£ Low Drive Power
£ Low VCE(sat)
£ Discrete Super-Fast Recovery
Free-Wheel Diode
£ Isolated Baseplate for Easy
Heat Sinking
Applications:
£ AC Motor Control
£ Motion/Servo Control
£ Photovoltaic/Fuel Cell
Ordering Information:
Example: Select the complete
module number you desire from
the table below -i.e.
CM400HX-24A is a 1200V (VCES),
400 Ampere Single IGBTMOD™
Power Module.
Type
Current Rating
Amperes
VCES
Volts (x 50)
CM
400
24
1
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272
CM400HX-24A
Single IGBTMOD™ NX-Series Module
400 Amperes/1200 Volts
Absolute Maximum Ratings, Tj = 25°C unless otherwise specified
Characteristics
Symbol
Power Device Junction Temperature
CM400HX-24A
Units
Tj
-40 to 150
°C
Tstg
-40 to 125
°C
Mounting Torque, M5 Mounting Screws
—
31
in-lb
Mounting Torque, M6 Main Terminal Screws
—
40
in-lb
Module Weight (Typical)
—
330
Grams
Baseplate Flatness, On Centerline X, Y (See Below)
—
±0 ~ +100
µm
VISO
2500
Volts
Collector-Emitter Voltage (G-E Short)
VCES
1200
Volts
Gate-Emitter Voltage (C-E Short)
VGES
±20
Volts
IC
400
Amperes
Storage Temperature
Isolation Voltage, AC 1 minute, 60Hz Sinusoidal
Inverter Sector
Collector Current (TC = 88°C)*1*4*9
Peak Collector Current (Pulse)*3
ICM
800
Amperes
Emitter Current (TC = 25°C)*1*4*9 IE*2
400
Amperes
IEM*2
800
Amperes
PC
2450
Watts
Peak Emitter Current (Pulse)*3
Maximum Collector Dissipation (TC = 25°C)*1*4
*1
*2
*3
*4
*9
Case temperature (TC) and heatsink temperature (Tf) are defined on the surface of the baseplate and heatsink at just under the chip.
IE, IEM, VEC, trr and Qrr represent ratings and characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
Pulse width and repetition rate should be such that device junction temperature (Tj) does not exceed Tj(max) rating.
Junction temperature (Tj) should not increase beyond Tj(max) rating.
Use both of each main terminal (collector and emitter) to connect external wiring.
BASEPLATE FLATNESS
MEASUREMENT POINT
CHIP LOCATION (TOP VIEW)
NTC Thermistor
87.9
Y
FWDi
0
IGBT
+ : CONVEX
HEATSINK SIDE
– : CONCAVE
Chip Location (Top View)
0
0
46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25
X
– : CONCAVE
21.8
47
24
48
23
35.2
35.2
45.0
0
1
2
3
4
5
6
7
8
9 10 11 12 13 14 15 16 17 18 19 20 21 22
73.6 74.3
+ : CONVEX
HEATSINK SIDE
21.8
Dimensions in mm (Tolerance: ±1mm)
2
Rev. 3/09
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272
CM400HX-24A
Single IGBTMOD™ NX-Series Module
400 Amperes/1200 Volts
Electrical and Mechanical Characteristics, Tj = 25°C unless otherwise specified
Inverter Sector
Characteristics
Collector Cutoff Current
Gate-Emitter Threshold Voltage
Gate Leakage Current
Collector-Emitter Saturation Voltage
Symbol
Test Conditions
Min.
Typ.
Max.
Units
ICES
VCE = VCES, VGE = 0V
—
—
1.0
mA
VGE(th)
IC = 40mA, VCE = 10V
6
7
8
Volts
IGES
VGE = VGES, VCE = 0V
—
—
0.5
µA
VCE(sat)
IC = 400A, VGE = 15V, Tj = 25°C*5
—
2.0
2.6
Volts
IC = 400A, VGE = 15V, Tj = 125°C*5
—
2.2
—
Volts
IC = 400A, VGE = 15V, Chip
—
1.9
—
Volts
—
—
66.0
nF
—
—
6.0
nF
Input Capacitance
Cies
Output Capacitance
Coes
Reverse Transfer Capacitance
Cres
Total Gate Charge
QG
VCE = 10V, VGE = 0V
—
—
1.3
nF
VCC = 600V, IC = 400A, VGE = 15V
—
2000
—
nC
—
—
660
ns
VCC = 600V, IC = 400A,
—
—
190
ns
Inductive
Turn-on Delay Time
td(on)
Load
Turn-on Rise Time
tr
Switch
Turn-off Delay Time
td(off)
VGE = ±15V,
—
—
700
ns
Time
Turn-off Fall Time
tf
RG = 0.75Ω, IE = 400A,
—
—
600
ns
Reverse Recovery Time*
trr*2
Inductive Load Switching Operation
—
—
250
ns
Reverse Recovery Charge*
Qrr*2
—
13
—
µC
Emitter-Collector Voltage*
VEC*2
IE = 400A, VGE = 0V, Tj = 25°C*5
—
2.6
3.4
Volts
IE = 400A, VGE = 0V, Tj = 125°C*5
—
2.16
—
Volts
IE = 400A, VGE = 0V, Chip
—
2.5
—
Volts
Min.
Typ.
Max.
Units
Thermal and Mechanical Characteristics, Tj = 25°C unless otherwise specified
Characteristics
Module Lead Resistance
Symbol
Test Conditions
Rlead
Main Termnals-Chip (Per Switch)
—
0.6
—
mΩ
Thermal Resistance, Junction to Case**
Rth(j-c)Q
Per IGBT*1
—
—
0.051
°C/W
Thermal Resistance, Junction to Case**
Rth(j-c)D
Per FWDi*1
—
—
0.093
°C/W
Rth(c-f)
Case to Heatsink (Per 1 Module)
—
0.015
—
°C/W
2.1
3.0
3.9
Ω
Contact Thermal Resistance**
Thermal Grease
Internal Gate Resistance
RGint
Internal Gate Resistance
External Gate Resistance
Applied*1*7
TC = 25°C
TC = 125°C
RG
4.2
6.0
7.8
Ω
0.75
—
7.8
Ω
Min.
Typ.
Max.
Units
4.85
5.00
5.15
kΩ
–7.3
—
+7.8
%
—
3375
—
K
—
—
10
mW
NTC Thermistor Sector, Tj = 25°C unless otherwise specified
Characteristics
Symbol
Zero Power Resistance
R
Deviation of Resistance
∆R/R
B Constant
Power Dissipation
B(25/50)
P25
Test Conditions
TC =
25°C*1
TC = 100°C, R100 = 493Ω*1
)*6
B = (InR1 – InR2) / (1/T1 – 1/T2
TC = 25°C*1
*1 Case temperature (TC) and heatsink temperature (Tf) are defined on the surface of the baseplate and heatsink at just under the chip.
*2 IE, IER, VEC, trr and Qrr represent ratings and characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
*5 Pulse width and repetition rate should be such as to cause negligible temperature rise.
*6 R1: Resistance at Absolute Temperature T1(K), R2: Resistance at Absolute Temperature T2(K), T(K) = T(°C) + 273.15
*7 Typical value is measured by using thermally conductive grease of λ = 0.9 [W/(m • K)].
Rev. 3/09
3
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272
CM400HX-24A
Single IGBTMOD™ NX-Series Module
400 Amperes/1200 Volts
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(INVERTER PART - TYPICAL)
VGE =
20V
4
Tj = 25°C
13
15
COLLECTOR-EMITTER
SATURATION VOLTAGE, VCE(sat), (VOLTS)
600
12
400
11
200
10
9
0
2
4
6
8
200
400
600
IC = 800A
6
IC = 400A
4
IC = 160A
2
0
800
6
8
10
12
14
16
18
GATE-EMITTER VOLTAGE, VGE, (VOLTS)
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(INVERTER PART - TYPICAL)
CAPACITANCE VS. VCE
(INVERTER PART - TYPICAL)
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(INVERTER PART - TYPICAL)
103
CAPACITANCE, Cies, Coes, Cres, (nF)
102
0
1
2
3
103
VGE = 0V
td(off)
td(on)
Cies
Coes
101
100
102
tr
101
VCC = 600V
VGE = ±15V
RG = 0.75Ω
Tj = 125°C
Inductive Load
Cres
100
101
102
100
101
102
103
EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS)
COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)
COLLECTOR CURRENT, IC, (AMPERES)
SWITCHING TIME VS.
GATE RESISTANCE
(INVERTER PART - TYPICAL)
REVERSE RECOVERY CHARACTERISTICS
(INVERTER PART - TYPICAL)
GATE CHARGE VS. VGE
(INVERTER PART)
103
VCC = 600V
VGE = ±15V
IC = 400A
Tj = 125°C
Inductive Load
td(on)
103
td(off)
tr
102
10-1
100
GATE RESISTANCE, RG, (Ω)
101
20
tf
102
10-1
10-1
4
REVERSE RECOVERY, Irr (A), trr (ns)
EMITTER CURRENT, IE, (AMPERES)
SWITCHING TIME, (ns)
0
8
COLLECTOR-CURRENT, IC, (AMPERES)
tf
4
1
Tj = 25°C
COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)
Tj = 25°C
Tj = 125°C
104
2
0
10
103
101
3
SWITCHING TIME, (ns)
0
10
VGE = 15V
Tj = 25°C
Tj = 125°C
20
102
VCC = 600V
VGE = ±15V
RG = 0.75Ω
Tj = 25°C
Inductive Load
Irr
trr
101
100
101
102
EMITTER CURRENT, IE, (AMPERES)
103
GATE-EMITTER VOLTAGE, VGE, (VOLTS)
COLLECTOR CURRENT, IC, (AMPERES)
800
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(INVERTER PART - TYPICAL)
COLLECTOR-EMITTER
SATURATION VOLTAGE, VCE(sat), (VOLTS)
OUTPUT CHARACTERISTICS
(INVERTER PART - TYPICAL)
IC = 400A
16
VCC = 400V
VCC = 600V
12
8
4
0
0
1000
2000
3000
GATE CHARGE, QG, (nC)
Rev. 3/09
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272
CM400HX-24A
Single IGBTMOD™ NX-Series Module
400 Amperes/1200 Volts
100
101
102
103
SWITCHING LOSS, Eon, Eoff, (mJ/PULSE)
SWITCHING LOSS, Eon, Eoff, (mJ/PULSE)
VCC = 600V
VGE = ±15V
RG = 0.75Ω
Tj = 125°C
Inductive Load
Eon
Eoff
102
101
100
10-1
REVERSE RECOVERY
SWITCHING LOSS, Err, (mJ/PULSE)
VCC = 600V
VGE = ±15V
IE = 400A
Tj = 125°C
Inductive Load
Err
10-2
100
GATE RESISTANCE, RG, (Ω)
Rev. 3/09
100
10-1
101
100
10-1
NORMALIZED TRANSIENT THERMAL IMPEDANCE, Zth(j-c')
Zth = Rth • (NORMALIZED VALUE)
REVERSE RECOVERY SWITCHING LOSS VS.
GATE RESISTANCE
(INVERTER PART - TYPICAL)
102
100
101
101
10-3
10-3
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(INVERTER PART - TYPICAL)
10-2
10-1
100
VCC = 600V
VGE = ±15V
RG = 0.75Ω
Tj = 125°C
Inductive Load
101
100
101
Err
102
103
EMITTER CURRENT, IE, (AMPERES)
GATE RESISTANCE, RG, (Ω)
COLLECTOR CURRENT, IC, (AMPERES)
103
102
VCC = 600V
VGE = ±15V
IC = 400A
Tj = 125°C
Inductive Load
Eon
Eoff
REVERSE RECOVERY
SWITCHING LOSS, Err, (mJ/PULSE)
103
102
101
REVERSE RECOVERY SWITCHING LOSS VS.
EMITTER CURRENT
(INVERTER PART - TYPICAL)
SWITCHING LOSS VS.
GATE RESISTANCE
(INVERTER PART - TYPICAL)
SWITCHING LOSS VS.
COLLECTOR CURRENT
(INVERTER PART - TYPICAL)
101
10-1
Single Pulse
TC = 25°C
Per Unit Base =
Rth(j-c) =
0.051°C/W
(IGBT)
Rth(j-c) =
0.093°C/W
(FWDi)
10-2
10-5
10-4
10-3
10-3
TIME, (s)
5