POWEREX CM1800DY-34S

CM1800DY-34S
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272
www.pwrx.com
Dual Half-Bridge
IGBTMOD™ HVIGBT
Series Module
1800 Amperes/1700 Volts
G
F
A
G
G
J (18 PLACES)
H (12 PLACES)
G
E2
G2
C2
E2
C1
C1
F
S L
C2E1
V C B
D
C2E1
AA
L
L
Q
E F
G1
E1
N
K
AG
AF
AF
AF
AH
F
FW
AB
U
R
K
N
N
M (8 PLACES)
AF
T
C1
P
K
X
Y
P
L
E2
G
H
F
AJ
AM
AK
AL
AF
AF
AD
AC
(SCREWING
DEPTH)
Z
(SCREWING
DEPTH)
F
AE
Tolerance Otherwise Specified (mm)
Division of Dimension Tolerance
0.5 to 3
±0.2
over
3 to 6
±0.3
over
6 to 30
±0.5
over 30 to 120
±0.8
over 120 to 400
±1.2
The tolerance of size between
terminals is assumed to ±0.4
G2
E2 (Es2)
C2 (Cs2)
Tr2
E2
E2
C1
C1
C2E1
Di2
Di1
C2E1
Tr1
G1
E1 (Es1)
C1 (Cs1)
TH1
NTC
TH2
Outline Drawing and Circuit Diagram
Dimensions
Inches
Millimeters
A
12.2
310.0
B
5.6
142.5
C
4.96
126.0
D
1.89
48.0
E
1.85
46.9
F
0.28
7.0
G
2.28
58.0
H 0.21±0.004 Dia. 5.5±0.1 Dia.
J
M6
M6
K
1.65
42.0
L
0.91
23.0
M
M4
M4
N
0.35
9.0
P
0.47
11.9
Q
0.21
5.4
R
0.33
8.5
S
4.92
125.0
T
0.6
15.0
Dimensions
U
V
W
X
Y
Z
AA
AB
AC
AD
AE
AF
AG
AH
AJ
AK
AL
AM
Inches
Millimeters
0.83
21.0
1.5
38.0
2.04
51.9
1.85+0.04/-0.0247.1+1.0/-0.5
1.55
39.4
0.63
16.0
0.24
6.2
0.16
4.0
0.45
11.5
2.01+0.04/-0.0251.0+1.0/-0.5
0.32
8.2
0.55
14.0
2.05
52.0
0.59
15.0
7.01
178.0
3.98
101.0
1.63
41.5
1.54
39.0
Description:
Powerex IGBTMOD™ Modules
are designed for use in switching
applications. Each module
consists of two IGBT Transistors
in a half-bridge configuration with
each transistor having a reverseconnected super-fast recovery
free-wheel diode. All components
and interconnects are isolated from
the heat sinking baseplate, offering
simplified system assembly and
thermal management.
Features:
£ Low Drive Power
£ Low VCE(sat)
£ Discrete Super-Fast Recovery
Free-Wheel Diode
£ Isolated Baseplate for Easy
Heat Sinking
£ NTC Thermistor
Applications:
£ AC Motor Control
£ Motion/Servo Control
£Photovoltaic/Wind
£ UPS Inverter
Ordering Information:
Example: Select the complete
module number you desire from
the table below -i.e.
CM1800DY-34S is a 1700V (VCES),
1800 Ampere Dual Half-Bridge
IGBTMOD™ HVIGBT Power
Module.
Type
Current Rating
Amperes
VCES
Volts (x 50)
CM1800 34
5/12 Rev. 1
1
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
CM1800DY-34S
Dual Half-Bridge IGBTMOD™ HVIGBT Module
1800 Amperes/1700 Volts
Absolute Maximum Ratings, Tj = 25°C unless otherwise specified
Inverter Part IGBT/FWDi
Characteristics
SymbolRatingUnits
Collector-Emitter Voltage (VGE = 0V)
VCES 1700Volts
Gate-Emitter Voltage (VCE = 0V)
VGES ±20Volts
Collector Current (DC, TC = 105°C)*2,*4IC
Collector Current (Pulse,
Repetitive)*3I
1800Amperes
CRM
3600Amperes
Total Maximum Power Dissipation (TC = 25°C)*2,*4Ptot 11535Watts
Emitter Current, Free Wheeling Diode Forward Current (TC = 25°C)*2 Emitter Current, Free Wheeling Diode Forward Current (Pulse, repetitive)*3 IE*1
1800Amperes
IERM*1
3600Amperes
Module
Characteristics
SymbolRatingUnits
Isolation Voltage (Terminals to Baseplate, f = 60Hz, AC 1 minute)
VISO4000 V
Maximum Junction Temperature
Tj(max)175 °C
Maximum Case Temperature*4TC(max)125 °C
Tr2
Di2
Di1
Tr1
Tr2
Tr2
Di2
Tr1
Tr2
Di1
Di2
Di1
Tr1
Tr2
Di2
Tr1
Tr2
Di1
Di2
Di1
Tr1
Tr2
Di2
Tr1
Tr2
Di1
Di2
Di1
Tr1
Tr2
Di2
Tr1
101.2
96.2
87.7
82.7
Di1
54.2
Tr1
40.7
Di1
Tr2
Di1
Di2
0
°C
24.0
-40 to +125
198.0
226.2
256.0
284.2
*1 Represent ratings and characteristics of the anti-parallel, emitter-to-collector free wheeling
diode (FWDi).
*2 Junction temperature (Tj) should not increase beyond maximum junction
temperature (Tj(max)) rating.
*3 Pulse width and repetition rate should be such that device junction temperature (Tj)
does not exceed Tj(max) rating.
*4 Case temperature (TC) and heatsink temperature (Ts) is measured on the surface
(mounting side) of the baseplate and the heatsink side just under the chips.
Refer to the figure to the right for chip location.
The heatsink thermal resistance should be measured just under the chips.
52.2
Tstg
Storage Temperature
82.0
°C
110.2
-40 to +150
140.0
Tj(opr)
168.2
Operating Junction Temperature
Tr1
Di2
59.2
45.7
24.5
Th
0
25.7
54.0
46.5
83.7
112.0
141.7
170.0
199.7
228.0
257.7
286.0
0
LABEL SIDE
Each mark points to the center position of each chip.
Tr1 / Tr2: IGBT
2
Di1 / Di2: FWDi
Th: NTC Thermistor
5/12 Rev. 1
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
CM1800DY-34S
Dual Half-Bridge IGBTMOD™ HVIGBT Module
1800 Amperes/1700 Volts
Electrical Characteristics, Tj = 25°C unless otherwise specified
Inverter Part IGBT/FWDi
Characteristics
Symbol
Test Conditions
Min.
Typ.
Max.
Units
ICES
VCE = VCES, VGE = 0V
—
—
1
mA
Gate-Emitter Leakage Current
IGES
VGE = VGES, VCE = 0V
—
—
5.0
µA
Gate-Emitter Threshold Voltage
VGE(th)
IC = 45mA, VCE = 10V
5.4
6.0
6.6
Volts
Collector-Emitter Saturation Voltage
VCE(sat)
IC = 1800A, VGE = 15V, Tj = 25°C*5
—
2.20
2.70
Volts
(Terminal)
IC = 1800A, VGE = 15V, Tj = 125°C*5
—
2.40
—
Volts
150°C*5
—
2.45
—
Volts
VCE(sat)
IC = 1800A, VGE = 15V, Tj = 25°C*5
—
2.10
2.60
Volts
(Chip)
IC = 1800A, VGE = 15V, Tj = 125°C*5
—
2.30
—
Volts
IC = 1800A, VGE = 15V, Tj = 150°C*5
—
2.35
—
Volts
Collector-Emitter Cutoff Current
IC = 1800A, VGE = 15V, Tj =
Collector-Emitter Saturation Voltage
Input Capacitance
Cies
Output Capacitance
Coes
Reverse Transfer Capacitance
Cres
Gate Charge
QG
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Emitter-Collector Voltage
—
—
460
nF
VCE = 10V, VGE = 0V
—
—
48
nF
—
—
8.0
nF
VCC = 1000V, IC = 1800A, VGE = 15V
—
8400
—
nC
td(on)
—
—
1100
ns
tr
VCC = 1000V, IC = 1800A, VGE = ±15V,
—
—
200
ns
td(off)
RG = 0Ω, Inductive Load
—
—
950
ns
—
—
500
ns
25°C*5
—
2.00
2.50
Volts
IE = 1800A, VGE = 0V, Tj = 125°C*5
—
2.10
—
Volts
tf
*1
VEC
(Terminal)
IE = 1800A, VGE = 0V, Tj =
IE = 1800A, VGE = 0V, Tj = 150°C*5
Emitter-Collector Voltage
—
2.05
—
Volts
VEC*1
IE = 1800A, VGE = 0V, Tj = 25°C*5
—
1.9
2.40
Volts
(Chip)
125°C*5
—
2.0
—
Volts
—
1.95
—
Volts
IE = 1800A, VGE = 0V, Tj =
IE = 1800A, VGE = 0V, Tj = 150°C*5
Reverse Recovery Time
trr*1
VCC = 1000V, IE = 1800A, VGE = ±15V
—
—
350
ns
Reverse Recovery Charge
Qrr*1
RG = 0Ω, Inductive Load
—
360
—
µC
Turn-on Switching Energy per Pulse
Eon
VCC = 1000V, IC = IE = 1800A,
—
(TBD)
—
mJ
Turn-off Switching Energy per Pulse
Eoff
VGE = ±15V, RG = 0Ω,
—
(TBD)
—
mJ
Reverse Recovery Energy per Pulse
*1
Tj = 150°C, Inductive Load
—
(TBD)
—
mJ
Main Terminals-Chip,
—
0.11
—
mΩ
—
1.1
—
Ω
Internal Lead Resistance
Err
RCC' + EE'
Per Switch,TC = 25°C*4
Internal Gate Resistance
rg
Per Switch
*1 Represent ratings and characteristics of the anti-parallel, emitter-to-collector free wheeling
diode (FWDi).
*4 Case temperature (TC) and heatsink temperature (Ts) are measured on the surface
(mounting side) of the baseplate and the heatsink side just under the chips.
Refer to the figure on page 1 for chip location.
The heatsink thermal resistance should be measured just under the chips.
*5 Pulse width and repetition rate should be such as to cause negligible temperature rise.
5/12 Rev. 1
3
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
CM1800DY-34S
Dual Half-Bridge IGBTMOD™ HVIGBT Module
1800 Amperes/1700 Volts
Electrical Characteristics, Tj = 25°C unless otherwise specified (continued)
NTC Thermistor Part
Characteristics
Symbol
Zero Power Resistance
R25
Deviation of Resistance
∆R/R
B Constant
B(25/50)
Power Dissipation
Test Conditions
TC =
25°C*2
TC = 100°C, R100 = 493Ω*4
Approximate by
Equation*6
TC = 25°C*4
P25
Min.
Typ.
Max.
Units
4.85
5.00
5.15
kΩ
-7.3
—
+7.8
%
—
3375
—
K
—
—
10
mW
Min.
Typ.
Max.
Units
Thermal Resistance Characteristics, Tj = 25°C unless otherwise specified
Characteristics
Symbol
Test Conditions
Thermal Resistance, Junction to Case*4
Rth(j-c)Q
Per IGBT
—
—
13
K/kW
Thermal Resistance, Junction to Case*4
Rth(j-c)D
Per FWDi
—
—
22
K/kW
Contact Thermal Resistance,
Rth(c-s)
—
3.1
—
K/kW
Thermal Grease Applied
Case to Heatsink*4
(Per 1/2 Module)*7
Mechanical Characteristics
Mounting Torque
Mt
Main Terminals, M6 Screw
31
35
40
in-lb
Auxiliary Terminals, M4 Screw
12
13
15
in-lb
Ms
Mounting, M5 Screw
22
27
31
in-lb
Creepage Distance
ds
Terminal to Terminal
16
—
—
mm
Terminal to Baseplate
25
—
—
mm
Clearance
da
Terminal to Terminal
16
—
—
mm
Terminal to Baseplate
24
—
—
mm
Weight
m
—
2000
—
Grams
Flatness of Baseplate
ec
On Centerline X, Y*8
-50
—
+100
µm
VCC
Applied Across C1-E2
—
1000
1200
Volts
Gate-Emitter Drive Voltage
VGE(on)
Applied Across G1-Es1/G2-Es2
13.5
15.0
16.5
Volts
External Gate Resistance
RG
Per Switch
0
—
2
Ω
MOUNTING SIDE
4
Tr1
Tr2
Di2
Tr1
Tr2
Di1
Tr1
Tr2
Di2
Di1
Tr1
Tr2
Di1
Di2
Tr1
Tr2
Di2
Di1
Tr1
Tr2
Di1
Di2
Tr1
Tr2
Di2
0
Tr1
101.2
96.2
87.7
82.7
Di1
54.2
Tr1
40.7
Di1
Tr2
Di1
Di2
24.0
52.2
82.0
110.2
140.0
168.2
198.0
Di1
Tr1
Di2
59.2
45.7
24.5
Th
Y
ec
0
- CONCAVE
Each mark points to the center position of each chip.
+ CONVEX
Tr1 / Tr2: IGBT
Di1 / Di2: FWDi
0
25.7
54.0
46.5
83.7
112.0
141.7
170.0
199.7
228.0
257.7
X
MOUNTING
SIDE
MOUNTING SIDE
Di1
Tr2
Di2
286.0
- CONCAVE
+ CONVEX
RECOMMENDED AREA FOR EVEN APPLICATION
OF THERMALLY CONDUCTIVE GREASE
(PER BASEPLATE)
Tr2
Di2
226.2
*4 Case temperature (TC) and heatsink temperature (Ts) is measured on the surface
(mounting side) of the baseplate and the heatsink side just under the chips.
Refer to the figure to the right for chip location.
The heatsink thermal resistance should be measured just under the chips.
R25
1
1
*6 B(25/50) = In(
)/(
–
)
R50 T25 T50
R25; Resistance at Absolute Temperature T25 [K]; T25 = 25 [°C] + 273.15 = 298.15 [K]
R50; Resistance at Absolute Temperature T50 [K]; T50 = 50 [°C] + 273.15 = 323.15 [K]
*7 Typical value is measured by using thermally conductive grease of λ = 0.9 [W/(m • K)].
*8 Baseplate (mounting side) flatness measurement points (X, Y) are shown in the figure
below.
256.0
DC Supply Voltage
284.2
Recommended Operating Conditons, Ta = 25°C
LABEL SIDE
Th: NTC Thermistor
5/12 Rev. 1
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
CM1800DY-34S
Dual Half-Bridge IGBTMOD™ HVIGBT Module
1800 Amperes/1700 Volts
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
4000
3.5
13.5
11
2500
2000
10
1500
1000
9
500
0
Tj = 25°C
0
2
4
6
8
3.0
2.5
2.0
1.5
1.0
0.5
0
10
0
600
8
IC = 3600A
6
IC = 1800A
4
IC = 720A
2
0
1200 1800 2400 3200 3600
Tj = 25°C
6
8
10
12
14
GATE-EMITTER VOLTAGE, VGE, (VOLTS)
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
CAPACITANCE VS. VCE
(TYPICAL)
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
CAPACITANCE, Cies, Coes, Cres, (nF)
Cies
102
td(off)
102
Coes
101
Cres
100
103
td(on)
tf
tr
102
VCC = 1000V
VGE = ±15V
RG = 0Ω
Tj = 150°C
Inductive Load
VGE = 0V
0.5
1.0
1.5
2.0
2.5
3.0
10-1
10-1
100
101
101
102
102
103
104
EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS)
COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)
COLLECTOR CURRENT, IC, (AMPERES)
SWITCHING TIME VS.
GATE RESISTANCE
(TYPICAL)
HALF-BRIDGE SWITCHING
CHARACTERISTICS (TYPICAL)
HALF-BRIDGE SWITCHING
CHARACTERISTICS (TYPICAL)
td(on)
103
td(off)
tf
tr
102
10-1
100
GATE RESISTANCE, RG, (Ω)
5/12 Rev. 1
101
103
102
101
102
SWITCHING ENERGY, Eon, Eoff, (mJ)
REVERSE RECIVERY ENERGY, Err, (mJ)
103
VCC = 1000V
VGE = ±15V
IC = 1800A
Tj = 150°C
Inductive Load
SWITCHING ENERGY, Eon, Eoff, (mJ)
REVERSE RECIVERY ENERGY, Err, (mJ)
SWITCHING TIME, (ns)
0
20
104
103
103
104
18
COLLECTOR CURRENT, IC, (AMPERES)
Tj = 25°C
Tj = 125°C
Tj = 150°C
101
16
COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)
104
EMITTER CURRENT, IE, (AMPERES)
10
VGE = 15V
Tj = 25°C
Tj = 125°C
Tj = 150°C
SWITCHING TIME, (ns)
COLLECTOR CURRENT, IC, (AMPERES)
VGE = 20V
15
3000
COLLECTOR-EMITTER
SATURATION VOLTAGE, VCE(sat), (VOLTS)
12
3500
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
COLLECTOR-EMITTER
SATURATION VOLTAGE, VCE(sat), (VOLTS)
OUTPUT CHARACTERISTICS
(TYPICAL)
VCC = 1000V
VGE = ±15V
RG = 0Ω
Tj = 125°C
Eon
Eoff
Err
103
COLLECTOR CURRENT, IC, (AMPERES)
EMITTER CURRENT, IE, (AMPERES)
104
102
101
102
VCC = 1000V
VGE = ±15V
RG = 0Ω
Tj = 150°C
Eon
Eoff
Err
103
104
COLLECTOR CURRENT, IC, (AMPERES)
EMITTER CURRENT, IE, (AMPERES)
5
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
CM1800DY-34S
Dual Half-Bridge IGBTMOD™ HVIGBT Module
1800 Amperes/1700 Volts
HALF-BRIDGE SWITCHING
CHARACTERISTICS (TYPICAL)
103
102
10-1
100
101
103
102
10-1
GATE-EMITTER VOLTAGE, VGE, (VOLTS)
20
VCC = 1000V
IC = 1800A
15
0
0
2000 4000 6000 8000 1000012000
GATE CHARGE, QG, (nC)
6
102
102
101
10-3
10-3
Single Pulse
TC = 25°C
Per Unit Base =
Rth(j-c) =
16K/kW
(IGBT)
Rth(j-c) =
27K/kW
(FWDi)
10-1
TIME, (s)
100
104
TURN-OFF SWITCHING SOA
(RBSOA)
2x
10-2
103
EMITTER CURRENT, IE, (AMPERES)
100
10-2
5
103
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(MAXIMUM)
10-1
10
100
VCC = 1000V
VGE = ±15V
RG = 0Ω
Tj = 150°C
Inductive Load
Irr
trr
GATE RESISTANCE, RG, (Ω)
NORMALIZED TRANSIENT THERMAL IMPEDANCE, Zth(j-c')
Zth = Rth • (NORMALIZED VALUE)
GATE RESISTANCE, RG, (Ω)
GATE CHARGE VS. VGE
Eon
Eoff
Err
COLLECTOR CURRENT, IC, (NORMALIZED)
Eon
Eoff
Err
104
VCC = 1000V
VGE = ±15V
IC = 1800A
Tj = 150°C
REVERSE RECOVERY, Irr (A), trr (ns)
104
VCC = 1000V
VGE = ±15V
IC = 1800A
Tj = 125°C
SWITCHING ENERGY, Eon, Eoff, (mJ)
REVERSE RECIVERY ENERGY, Err, (mJ)
SWITCHING ENERGY, Eon, Eoff, (mJ)
REVERSE RECIVERY ENERGY, Err, (mJ)
104
REVERSE RECOVERY CHARACTERISTICS
(TYPICAL)
HALF-BRIDGE SWITCHING
CHARACTERISTICS (TYPICAL)
101
VCC = ≤1200V
VGE = ±15V
RG = 0~2 Ω
1x
0
Tj = 25 ~ 150°C
Normal Load Operations
(Continuous)
Tj ≤ 175°C
Unusual Load Operations
(Limited Period)
0
400
800
1200
1600
2000
COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)
5/12 Rev. 1