CM600DY-24S Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com Dual IGBT S-Series Module 600 Amperes/1200 Volts A D L (4 PLACES) K K K V G C2E1 G2 E2 C1 E2 B E H N J E1 G1 M (3 PLACES) F G Q P P Y U Q Description: Powerex Dual IGBT Modules are designed for use in switching applications. Each module consists of two IGBT Transistors in a half-bridge configuration with each transistor having a reverseconnected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management. X Z F V P W S C LABEL R G2 E2 (Es2) Tr2 C2E1 Di1 E2 Tr1 Di2 C1 Tolerance Otherwise Specified Division of Dimension Tolerance 0.5 to 3 ±0.2 over 3 to 6 ±0.3 over 6 to 30 ±0.5 over 30 to 120 ±0.8 over 120 to 400 ±1.2 E1 (Es1) G1 Outline Drawing and Circuit Diagram Dimensions Inches Millimeters Dimensions Inches Millimeters A 4.33 110.0 N 1.18 30.0 B 3.15 80.0 P 0.71 18.0 C 1.14+0.04/-0.02 29.0+1.0/-0.5 Q 0.28 7.0 D 3.66±0.01 93.0±0.25 R 0.83 21.2 E 2.44±0.01 62.0±0.25 S 0.33 8.5 25.0 T 0.016 0.4 F 0.98 G 0.24 6.0 U 0.16 4.0 H 0.59 15.0 V 0.11 2.8 J 0.81 20.5 W 0.30 7.5 K 0.55 14.0 X 0.21 6.3 L 0.26 Dia. 6.5 Dia. Y 0.47 12.0 M M6 Metric M6 Z 0.85 21.5 Features: £ Low Drive Power £ Low VCE(sat) £ Discrete Super-Fast Recovery Free-Wheel Diode £ Isolated Baseplate for Easy Heat Sinking Applications: £ AC Motor Control £ Motion/Servo Control £UPS £ Welding Power Supplies £ Laser Power Supplies Ordering Information: Example: Select the complete module number you desire from the table - i.e. CM600DY-24S is a 1200V (VCES), 600 Ampere Dual IGBT Power Module. 11/12 Rev. 0 Type Current Rating Amperes VCES Volts (x 50) CM 600 24 1 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com CM600DY-24S Dual IGBT S-Series Module 600 Amperes/1200 Volts Absolute Maximum Ratings, Tj = 25°C unless otherwise specified Characteristics SymbolRating Units Collector-Emitter Voltage (G-E Short-Circuited) VCES1200 Volts Gate-Emitter Voltage (C-E Short-Circuited) VGES±20 Volts Collector Current (DC, TC = 112°C)*2,*4IC Collector Current (Pulse, 600Amperes Repetitive)*3I CRM 1200Amperes Total Power Dissipation (TC = 25°C)*2,*4Ptot 4050Watts Emitter Current*2 IE*1 Emitter Current (Pulse, Repetitive)*3 600Amperes IERM*1 1200Amperes Isolation Voltage (Terminals to Baseplate, RMS, f = 60Hz, AC 1 minute) VISO2500Volts Maximum Junction Temperature Tj(max)175 °C Maximum Case Temperature*4TC(max)125 °C Operating Junction Temperature (Under Switching) °C Tstg -40 to +125 °C 46.8 20.4 49.1 Tr2 Tr2 Tr2 35.6 Di2 Di2 Di2 0 *1 Represent ratings and characteristics of the anti-parallel, emitter-to-collector free wheeling diode (FWDi). *2 Junction temperature (Tj) should not increase beyond maximum junction temperature (Tj(max)) rating. *3 Pulse width and repetition rate should be such that device junction temperature (Tj) does not exceed Tj(max) rating. *4 Case temperature (TC) and heatsink temperature (Ts) is measured on the surface (mounting side) of the baseplate and the heatsink side just under the chips. Refer to the figure to the right for chip location. The heatsink thermal resistance should be measured just under the chips. 33.6 Storage Temperature 79.3 -40 to +150 66.1 Tj(opr) Di1 Tr1 57.5 Di1 Tr1 44.3 Di1 Tr1 31.1 0 0 LABEL SIDE Tr1/Tr2: IGBT 2 Di1/Di2: FWDi 11/12 Rev. 0 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com CM600DY-24S Dual IGBT S-Series Module 600 Amperes/1200 Volts Electrical Characteristics, Tj = 25°C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Units Collector-Emitter Cutoff Current ICES VCE = VCES, G-E Short-Circuited — — 1 mA Gate-Emitter Leakage Current IGES VGE = VGES, C-E Short-Circuited — — 5 µA IC = 60mA, VCE = 10V Gate-Emitter Threshold Voltage VGE(th) 5.4 6 6.6 Volts Collector-Emitter Saturation Voltage VCE(sat) IC = 600A, VGE = 15V, Tj = 25°C*5 — 1.85 2.25 Volts (Terminal) IC = 600A, VGE = 15V, Tj = 125°C*5 — 2.05 — Volts IC = 600A, VGE = 15V, Tj = 150°C*5 —2.10 — Volts Collector-Emitter Saturation Voltage VCE(sat) (Chip) IC = 600A, VGE = 15V, Tj = IC = 600A, VGE = 15V, Tj = 125°C*5 IC = 600A, VGE = 15V, Tj = Input Capacitance Cies Output Capacitance Coes Reverse Transfer Capacitance Cres Gate Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Emitter-Collector Voltage QG VCC = 600V, IC = 600A, VGE = 15V td(on) — 1.70 2.15 Volts — 1.90 — Volts —1.95 — Volts — — 60 nF — 12 nF — — 1.0 nF — nC 800 ns — — 1400 — — tr VCC = 600V, IC = 600A, VGE = ±15V, — — 200 ns td(off) RG = 0Ω, Inductive Load — — 600 ns tf — — 300 ns — 1.85 2.30 Volts IE = 600A, VGE = 0V, Tj = 125°C*5 — 1.85 — Volts IE = 600A, VGE = 0V, Tj = 150°C*5 —1.85 — Volts VEC*1 IE = 600A, VGE = 0V, Tj = 25°C*5 — 1.70 2.15 Volts (Chip) IE = 600A, VGE = 0V, Tj = 125°C*5 — 1.70 — Volts —1.70 — Volts — — 300 ns VEC*1 IE = 600A, VGE = 0V, Tj = 25°C*5 IE = 600A, VGE = 0V, Tj = Reverse Recovery Time 150°C*5 VCE = 10V, G-E Short-Circuited (Terminal) Emitter-Collector Voltage 25°C*5 trr*1 VCC = 600V, IE = 600A, VGE = ±15V *1 Reverse Recovery Charge Qrr Turn-on Switching Energy per Pulse Eon 150°C*5 RG = 0Ω, Inductive Load — 32 — µC VCC = 600V, IC = IE = 600A, — 65.9 — mJ Turn-off Switching Energy per Pulse Eoff VGE = ±15V, RG = 0Ω, — 79.1 — mJ Reverse Recovery Energy per Pulse Err*1 Tj = 150°C, Inductive Load — 55.2 — mJ rg Per Switch — 3.3 — Ω Internal Gate Resistance *1 Represent ratings and characteristics of the anti-parallel, emitter-to-collector free wheeling diode (FWDi). *5 Pulse width and repetition rate should be such as to cause negligible temperature rise. 11/12 Rev. 0 3 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com CM600DY-24S Dual IGBT S-Series Module 600 Amperes/1200 Volts Thermal Resistance Characteristics, Tj = 25°C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Units Thermal Resistance, Junction to Case*4 Rth(j-c)Q Per IGBT — — 37 K/kW Case*4 Rth(j-c)D Per IFWDi — — 60 K/kW Rth(c-s) Thermal Grease Applied — 18 — K/kW Test Conditions Min. Typ. Max. Units Mt Main Terminals, M6 Screw 31 35 40 in-lb Ms Mounting to Heatsink, M6 Screw 31 35 40 in-lb — Grams On Centerline X, Y*7 -100 — +100 µm Test Conditions Min. Typ. Max. Units Thermal Resistance, Junction to Contact Thermal Resistance, Case to Heatsink*4 (Per 1/2 Module)*6 Mechanical Characteristics Characteristics Symbol Mounting Torque Weight m Flatness of Baseplate ec —580 Recommended Operating Conditons, Ta = 25°C Characteristics Symbol Applied Across C1-E2 — 600 850 Volts Applied Across G1-Es1 / G2-Es2 13.5 15.0 16.5 Volts RG Per Switch 0 — 7.5 Ω External Gate Resistance X Tr2 Tr2 Tr2 35.6 Di2 Di2 Di2 0 49.1 Di1 Tr1 57.5 Di1 Tr1 44.3 Di1 Tr1 31.1 3 mm BOTTOM – CONCAVE BOTTOM 20.4 Y 33.6 – CONCAVE + CONVEX *4 Case temperature (TC) and heatsink temperature (Ts) is measured on the surface (mounting side) of the baseplate and the heatsink side just under the chips. Refer to the figure to the right for chip location. The heatsink thermal resistance should be measured just under the chips. *6 Typical value is measured by using thermally conductive grease of λ = 0.9 [W/(m • K)]. *7 Baseplate (mounting side) flatness measurement points (X, Y) are shown in the figure below. 79.3 VCC VGE(on) 66.1 Gate (-Emitter Drive) Voltage 46.8 (DC) Supply Voltage 0 0 LABEL SIDE Tr1/Tr2: IGBT Di1/Di2: FWDi LABEL SIDE BOTTOM 4 + CONVEX 11/12 Rev. 0 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com CM600DY-24S Dual IGBT S-Series Module 600 Amperes/1200 Volts COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (CHIP - TYPICAL) OUTPUT CHARACTERISTICS (CHIP - TYPICAL) 1200 3.5 12 13.5 15 800 11 600 400 10 200 9 Tj = 25°C 0 0 2 4 6 8 COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) 2.5 2.0 1.5 1.0 0.5 0 200 400 600 800 1000 1200 COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) COLLECTOR CURRENT, IC, (AMPERES) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (CHIP - TYPICAL) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (CHIP - TYPICAL) 104 10 Tj = 25°C 8 IC = 1200A 6 IC = 600A 4 IC = 240A 2 0 6 8 10 12 14 16 18 GATE-EMITTER VOLTAGE, VGE, (VOLTS) 11/12 Rev. 0 VGE = 15V Tj = 25°C Tj = 125°C Tj = 150°C 3.0 0 10 EMITTER CURRENT, IE, (AMPERES) COLLECTOR CURRENT, IC, (AMPERES) 1000 COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) VGE = 20V 20 Tj = 25°C Tj = 125°C Tj = 150°C 103 102 101 0 0.5 1.0 1.5 2.0 2.5 3.0 EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS) 5 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com CM600DY-24S Dual IGBT S-Series Module 600 Amperes/1200 Volts HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) CAPACITANCE VS. VCE (TYPICAL) 103 Cies 101 Coes 100 VGE = 0V 100 101 102 tr 102 VCC = 600V VGE = ±15V RG = 0Ω Tj = 125°C Inductive Load 101 101 102 103 COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) COLLECTOR CURRENT, IC, (AMPERES) HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) SWITCHING TIME VS. GATE RESISTANCE (TYPICAL) 103 103 td(off) SWITCHING TIME, td(on), tr (ns) td(on) tf tr 102 102 COLLECTOR CURRENT, IC, (AMPERES) tr 102 VCC = 600V VGE = ±15V RG = 0Ω Tj = 150°C Inductive Load 101 101 104 td(on) 103 101 10-1 103 td(off) tf 100 VCC = 600V VGE = ±15V IC = 600A Tj = 125°C Inductive Load 101 SWITCHING TIME, td(off), tf (ns) 10-1 SWITCHING TIME, (ns) tf Cres 10-1 6 td(off) td(on) 102 SWITCHING TIME, (ns) CAPACITANCE, Cies, Coes, Cres, (nF) 103 102 102 GATE RESISTANCE, RG, (Ω) 11/12 Rev. 0 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com CM600DY-24S Dual IGBT S-Series Module 600 Amperes/1200 Volts SWITCHING TIME VS. GATE RESISTANCE (TYPICAL) 102 103 td(off) VCC = 600V VGE = ±15V IC = 600A Tj = 150°C Inductive Load 101 10-1 100 101 REVERSE RECOVERY, Irr (A), trr (ns) SWITCHING TIME, td(on), tr (ns) tr tf 103 104 td(on) SWITCHING TIME, td(off), tf (ns) 103 REVERSE RECOVERY CHARACTERISTICS (TYPICAL) 102 102 102 101 101 103 EMITTER CURRENT, IE, (AMPERES) REVERSE RECOVERY CHARACTERISTICS (TYPICAL) GATE CHARGE VS. VGE 20 102 101 101 VCC = 600V VGE = ±15V RG = 0Ω Tj = 150°C Inductive Load Irr trr 102 EMITTER CURRENT, IE, (AMPERES) 103 GATE-EMITTER VOLTAGE, VGE, (VOLTS) REVERSE RECOVERY, Irr (A), trr (ns) 102 GATE RESISTANCE, RG, (Ω) 103 11/12 Rev. 0 VCC = 600V VGE = ±15V RG = 0Ω Tj = 125°C Inductive Load Irr trr VCC = 600V IC = 600A Tj = 25°C 15 10 5 0 0 400 800 1200 1600 2000 GATE CHARGE, QG, (nC) 7 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com CM600DY-24S Dual IGBT S-Series Module 600 Amperes/1200 Volts HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) 102 101 SWITCHING ENERGY, Eon, Eoff, (mJ/PULSE) REVERSE RECIVERY ENERGY, Err, (mJ/PULSE) SWITCHING ENERGY, Eon, Eoff, (mJ/PULSE) REVERSE RECIVERY ENERGY, Err, (mJ/PULSE) HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) VCC = 600V VGE = ±15V RG = 0Ω Tj = 125°C Eon Eoff Err 100 101 102 103 102 101 100 101 COLLECTOR CURRENT, IC, (AMPERES) EMITTER CURRENT, IE, (AMPERES) 103 SWITCHING ENERGY, Eon, Eoff, (mJ) REVERSE RECIVERY ENERGY, Err, (mJ) SWITCHING ENERGY, Eon, Eoff, (mJ) REVERSE RECIVERY ENERGY, Err, (mJ) 101 10-1 Eon Eoff Err 100 GATE RESISTANCE, RG, (Ω) 8 103 HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) VCC = 600V VGE = ±15V IC/IE = 600A Tj = 125°C 102 102 COLLECTOR CURRENT, IC, (AMPERES) EMITTER CURRENT, IE, (AMPERES) HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) 103 VCC = 600V VGE = ±15V RG = 0Ω Tj = 150°C Eon Eoff Err 101 VCC = 600V VGE = ±15V IC/IE = 600A Tj = 150°C 102 101 10-1 Eon Eoff Err 100 101 GATE RESISTANCE, RG, (Ω) 11/12 Rev. 0 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com NORMALIZED TRANSIENT THERMAL IMPEDANCE, Zth(j-c') Zth = Rth • (NORMALIZED VALUE) CM600DY-24S Dual IGBT S-Series Module 600 Amperes/1200 Volts TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (MAXIMUM) 100 10-1 Single Pulse TC = 25°C Per Unit Base = Rth(j-c) = 37 K/kW (IGBT) Rth(j-c) = 60 K/kW (FWDi) 10-2 10-3 10-5 10-4 10-3 10-2 10-1 100 101 TIME, (s) 11/12 Rev. 0 9