BCX56 NPN Transistors Plastic-Encapsulate Transistors Elektronische Bauelemente RoHS Compliant Product 1 Features 2 SOT-89 3 1.BASE 4.4~4.6 2.COLLECTOR 1.4~1.8 1.4~1.6 1.2 1 Collector-base voltage V(BR)CBO: 100 W (Tamb=25oC) A V 1.5Ref. 2.3~2.6 0.36~0.56 0.9~1.1 Power dissipation PCM: Collector current ICM: 3.94~4.25 3.EMITTER 0.32~0.52 0.35~0.44 2.9~3.1 Dimensision in Millimeter Operating and storage junction temperature range TJ, Tstg: -65 oC to +150 oC Complimentary to BCX53 o ELECTRICAL CHARACTERISTICS (Tamb=25 C Parameter unless otherwise specified) Symbol Test conditions MIN MAX UNIT Collector-base breakdown voltage V(BR)CBO Ic=100µA, IE=0 100 V Collector-emitter breakdown voltage V(BR)CEO IC= 1 mA , IB=0 80 V Emitter-base breakdown voltage V(BR)EBO IE=10µ A, IC=0 5 V Collector cut-off current ICBO VCB=30V, IE=0 100 nA Emitter cut-off current IEBO VEB=5 V, IC=0 100 nA hFE(1) VCE=2V, IC= 5mA 63 hFE(2) VCE=2V, IC= 150mA 63 hFE(3) VCE=2V, IC= 500mA 40 fT VCE= 5V, IC= 10mA 100 Collector-emitter saturation voltage VCE(sat) IC=500 mA, IB= 50mA 500 mV Base-emitter VBE(ON) IC= 500 mA, VCE=2V 1 V DC current gain BCX56 BCX56-10 BCX56-16 Transition frequency voltage 250 MHz Classification of hFE2 DEVICE MARKING http://www.SeCoSGmbH.com 01-Jun-2002 Rev. A Rank 10 16 Range 63 - 160 100 - 250 BCP56 xxxx Date Code Any changing of specification will not be informed individual Page 1 of 2 BCX56 Elektronische Bauelemente NPN Transistors Plastic-Encapsulate Transistors Characteristics Curve http://www.SeCoSGmbH.com 01-Jun-2002 Rev. A Any changing of specification will not be informed individual Page 2 of 2