SS8050W NPN Silicon General Purpose Transistor Elektronische Bauelemente RoHS Compliant Product FEATURES SOT-323 Collector 3 3 Power dissipation 2 A 1.800 2.200 1.150 1.350 Base C 0.800 1.000 2 Emitter L 3 B S Top View Operating & storage junction temperature 1 2 O Tj, Tstg : - 55 C ~ + 150 C V G C H D Max B A V(BR)CBO : 40 V O Min 1 1 PCM : 0.2 W Collector Current ICM : 1.5 A Collector-base voltage Dim D 0.300 0.400 G 1.200 1.400 H 0.000 0.100 J 0.100 0.250 K 0.350 0.500 L 0.590 0.720 S 2.000 2.400 V 0.280 0.420 All Dimension in mm J K O ELECTRICAL CHARACTERISTICS ( Tamp.=25 C unless otherwise specified) Parameter Symbol Test conditions Collector-base breakdown voltage V(BR)CBO Ic= 100μA， Collector-emitter breakdown voltage V(BR)CEO Emitter-base breakdown voltage V(BR)EBO MIN TYP MAX UNIT 40 V Ic= 0.1mA， IB=0 25 V IE=100μA， IC=0 5 V IE=0 Collector cut-off current ICBO VCB=40 V , IE=0 0.1 μA Collector cut-off current ICEO VCE=20V , IB=0 0.1 μA Emitter cut-off current IEBO VEB= 5V , 0.1 μA HFE(1) VCE=1V, IC= 50m A 120 HFE(2) VCE=1V, IC=500mA 40 IC=0 350 DC current gain Collector-emitter saturation voltage VCE(sat) IC=500 mA, IB= 50m A 0.5 V Base-emitter saturation voltage VBE(sat) IC=500 mA, IB= 50m A 1.2 V VCE=6V, fT Transition frequency IC= 20mA 100 MHz f=30MHz CLASSIFICATION OF h FE(1) Rank Range L 120-200 H 200-350 Marking : Y1 http://www.SeCoSGmbH.com 01-Jun-2002 Rev. A Any changing of specification will not be informed individual Page 1 of 2 SS8050W Elektronische Bauelemente http://www.SeCoSGmbH.com 01-Jun-2002 Rev. A NPN Silicon General Purpose Transistor Any changing of specification will not be informed individual Page 2 of 2