2N6300 2N6301 MECHANICAL DATA Dimensions in mm (inches) 6.35 (0.250) 8.64 (0.340) 3.68 (0.145) rad. max. 3.61 (0.142) 4.08(0.161) rad. 11.94 (0.470) 12.70 (0.500) 2 Designed for general purpose amplifier and low frequency switching applications. 0.71 (0.028) 0.86 (0.034) 1 14.48 (0.570) 14.99 (0.590) 24.13 (0.95) 24.63 (0.97) DARLINGTON SILICON POWER TRANSISTORS FEATURES • High DC Current Gain 1.27 (0.050) 1.91 (0.750) 4.83 (0.190) 5.33 (0.210) 9.14 (0.360) min. • Monolithic Construction with Built-in Base–Emitter Shunt Resistors TO–66 (TO-213AA) Pin 1 –Base Pin 2 –Emitter Case – Collector ABSOLUTE MAXIMUM RATINGS(Tc = 25°C unless otherwise stated) 2N6300 VCEO VCBO VEBO IC Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Collector Current IB PD Base Current Total Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Thermal Resistance – Junction - Case TSTG , TJ TθJC 2N6301 60V 60V Continuous Peak 80V 80V 5V 8A 16A 120mA 100W 75W 0.571W/°C 0.428W/°C –65 to +200°C 1.75°C/W 2.33°C/W Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: [email protected] Website: http://www.semelab.co.uk Document Number 3979 Issue 1 2N6300 2N6301 ELECTRICAL CHARACTERISTICS 2N6300 Parameter (Tcase = 25°C unless otherwise stated) Test Conditions Min. Typ. Max. Unit OFF CHARACTERISTICS VCEO(sus) Collector – Emitter Sustaining Voltage 1 IC = 100mA IB = 0 ICEO Collector Cut–off Current VCE = 30V IB = 0 ICEX Collector Cut–off Current IEBO Emitter Cut–off Current 60 V 0.5 VCE = Rated VCB VBE(off) = 1.5V 0.5 mA mA TC = 150°C 5.0 VBE = 5V IC = 0 2.0 VCE = 3V IC = 4A 750 VCE = 3V IC = 8A 100 Collector – Emitter Saturation IC = 4A IB = 16mA 2.0 Voltage IC = 8A IB = 80mA 3.0 VBE(sat) Base – Emitter Saturation Voltage IC = 8A IB = 80mA 4.0 V VBE(on) Base – Emitter On Voltage VCE = 3V IC = 4A 2.8 V VCB = 10V IE = 0 200 pF mA ON CHARACTERISTICS 1 hFE VCE(sat) DC Current Gain 18000 — V DYNAMIC CHARACTERISTICS Cob hfe hfe Output Capacitance f = 0.1MHz Magnitude of Common Emitter VCE = 3V Small Signal Short Circuit Current IC = 3A Transfer Ratio f = 1MHz Small Signal Current Gain VCE = 3V IC = 3A f = 1kHz 4.0 — 300 — Notes 1 Pulse test: tp = 300µs , Duty Cycle = 2% Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: [email protected] Website: http://www.semelab.co.uk Document Number 3979 Issue 1 2N6300 2N6301 ELECTRICAL CHARACTERISTICS 2N6301 Parameter (Tcase = 25°C unless otherwise stated) Test Conditions Min. Typ. Max. Unit OFF CHARACTERISTICS VCEO(sus) Collector – Emitter Sustaining Voltage 1 IC = 100mA IB = 0 ICEO Collector Cut–off Current VCE = 40V IB = 0 ICEX Collector Cut–off Current IEBO Emitter Cut–off Current 80 V 0.5 VCE = Rated VCB VBE(off) = 1.5V 0.5 TC = 150°C 5.0 mA mA VBE = 5V IC = 0 VCE = 3V IC = 4A 750 VCE = 3V IC = 8A 100 Collector – Emitter Saturation IC = 4A IB = 16mA 2.0 Voltage IC = 8A IB = 80mA 3.0 VBE(sat) Base – Emitter Saturation Voltage IC = 8A IB = 80mA 4.0 V VBE(on) Base – Emitter On Voltage VCE = 3V IC = 4A 2.8 V VCB = 10V IE = 0 200 pF 2 mA ON CHARACTERISTICS 1 hFE VCE(sat) DC Current Gain 18000 — V DYNAMIC CHARACTERISTICS Cob hfe hfe Output Capacitance f = 0.1MHz Magnitude of Common Emitter VCE = 3V Small Signal Short Circuit Current IC = 3A Transfer Ratio f = 1MHz Small Signal Current Gain VCE = 3V IC = 3A f = 1kHz 4.0 — 300 — Notes 1 Pulse test: tp = 300µs , Duty Cycle = 2% Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: [email protected] Website: http://www.semelab.co.uk Document Number 3979 Issue 1