AO4800B 30V Dual N-Channel MOSFET General Description The AO4800B uses advanced trench technology to provide excellent RDS(ON) and low gate charge. The two MOSFETs make a compact and efficient switch and synchronous rectifier combination for use in buck converters. Features VDS ID (at VGS=10V) 30V 6.9A RDS(ON) (at VGS=10V) < 27mΩ RDS(ON) (at VGS = 4.5V) < 32mΩ RDS(ON) (at VGS = 2.5V) < 50mΩ D1 D1 Top View S2 G2 S1 G1 1 2 3 4 8 7 6 5 D2 D2 D1 D1 G2 G1 S1 Absolute Maximum Ratings TA=25°C unless otherwise noted Symbol Parameter Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current VGS TA=25°C Units V ±12 V 5.8 A Pulsed Drain Current C IDM Avalanche Current C IAS, IAR 14 A Avalanche energy L=0.1mH C TA=25°C EAS, EAR 10 mJ Power Dissipation B Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Lead 30 2 PD TA=70°C Junction and Storage Temperature Range 1/6 Maximum 30 6.9 ID TA=70°C S2 TJ, TSTG Symbol t ≤ 10s Steady-State Steady-State W 1.3 RθJA RθJL -55 to 150 Typ 48 74 32 °C Max 62.5 90 40 Units °C/W °C/W °C/W www.freescale.net.cn AO4800B 30V Dual N-Channel MOSFET Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current Conditions Min ID=250µA, VGS=0V 30 TJ=55°C 5 Gate-Body leakage current VDS=0V, VGS= ±12V Gate Threshold Voltage VDS=VGS ID=250µA 0.7 ID(ON) On state drain current VGS=4.5V, VDS=5V 30 100 nA 1.5 V 17.8 27 28 40 VGS=4.5V, ID=6A 19 32 mΩ VGS=2.5V, ID=5A 24 50 mΩ 1 V 2.5 A TJ=125°C A gFS Forward Transconductance VDS=5V, ID=5A 33 VSD Diode Forward Voltage IS=1A,VGS=0V 0.7 IS Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Ciss Input Capacitance Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime VGS=4.5V, VDS=15V, ID=6.9A 1.5 mΩ S 630 pF 75 pF 50 SWITCHING PARAMETERS Qg Total Gate Charge Qgs µA 1.1 VGS=10V, ID=6.9A Coss Units V 1 VGS(th) Static Drain-Source On-Resistance Max VDS=30V, VGS=0V IGSS RDS(ON) Typ pF 3 4.5 Ω 6 7 nC 1.3 nC 1.8 nC 3 ns VGS=10V, VDS=15V, RL=2.2Ω, RGEN=3Ω 2.5 ns 25 ns tf Turn-Off Fall Time 4 ns trr Body Diode Reverse Recovery Time IF=6.9A, dI/dt=100A/µs 8.5 Qrr Body Diode Reverse Recovery Charge IF=6.9A, dI/dt=100A/µs 2.6 ns nC A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initialTJ=25°C. D. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating. 2/6 www.freescale.net.cn AO4800B 30V Dual N-Channel MOSFET TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 40 15 10V 35 3V VDS=5V 4.5V 12 30 2.5V 9 ID(A) ID (A) 25 20 6 15 10 3 VGS=2V 25°C 125°C 5 0 0 0 1 2 3 4 0 5 30 1 1.5 2 2.5 3 Normalized On-Resistance 1.8 25 RDS(ON) (mΩ Ω) 0.5 VGS(Volts) Figure 2: Transfer Characteristics (Note E) VDS (Volts) Fig 1: On-Region Characteristics (Note E) VGS=4.5V 20 15 VGS=10V VGS=4.5V ID=6A 1.6 1.4 17 5 VGS=10V 2 ID=6.9A 10 1.2 1 0.8 10 0 0 5 10 15 20 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 25 50 75 100 125 150 175 0 Temperature (°C) Figure 4: On-Resistance vs. Junction 18Temperature (Note E) 1.0E+01 50 ID=6.9A 1.0E+00 1.0E-01 125°C 30 IS (A) RDS(ON) (mΩ Ω) 40 125°C 25°C 1.0E-02 1.0E-03 20 1.0E-04 25°C 1.0E-05 10 0 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) 3/6 2 0.0 0.2 0.4 0.6 0.8 1.0 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) www.freescale.net.cn AO4800B 30V Dual N-Channel MOSFET TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 5 1000 VDS=15V ID=6.9A 800 Ciss Capacitance (pF) VGS (Volts) 4 3 2 600 400 Coss 1 200 0 0 0 2 4 6 Qg (nC) Figure 7: Gate-Charge Characteristics Crss 0 8 100.0 5 10 15 20 25 VDS (Volts) Figure 8: Capacitance Characteristics 30 100.0 IAR (A) Peak Avalanche Current TA=25°C TA=100°C ID (Amps) TA=150°C 10.0 10µs 10.0 RDS(ON) limited 100µs 1.0 1ms 10ms TA=125°C 0.1 DC TJ(Max)=150°C TA=25°C 10s 0.0 1.0 0.01 1 10 100 1000 Time in avalanche, tA (µ µs) Figure 9: Single Pulse Avalanche capability (Note C) 0.1 1 VDS (Volts) 10 100 Figure 10: Maximum Forward Biased Safe Operating Area (Note F) 10000 TA=25°C Power (W) 1000 100 10 1 0.00001 0.001 0.1 10 1000 Pulse Width (s) Figure 11: Single Pulse Power Rating Junction-to-Ambient (Note F) 4/6 www.freescale.net.cn AO4800B 30V Dual N-Channel MOSFET TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS Zθ JA Normalized Transient Thermal Resistance 10 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA 1 RθJA=90°C/W 0.1 PD 0.01 Single Pulse Ton T 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 12: Normalized Maximum Transient Thermal Impedance (Note F) 5/6 www.freescale.net.cn AO4800B 30V Dual N-Channel MOSFET Gate Charge Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC - DUT Vgs Ig Charge Resistive Switching Test Circuit & W aveforms RL Vds Vds 90% + Vdd DUT Vgs VDC - Rg 10% Vgs Vgs t d(on) tr t d(off) t on tf toff Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L 2 E AR = 1/2 LIAR Vds BVDSS Vds Id + Vdd Vgs Vgs I AR VDC - Rg Id DUT Vgs Vgs Diode Recovery Test Circuit & W aveforms Q rr = - Idt Vds + DUT Vgs Vds Isd Vgs Ig 6/6 L Isd + Vdd t rr dI/dt I RM Vdd VDC - IF Vds www.freescale.net.cn