SHENZHENFREESCALE AO4800B

AO4800B
30V
Dual N-Channel MOSFET
General Description
The AO4800B uses advanced trench technology to provide excellent RDS(ON) and low gate charge. The two
MOSFETs make a compact and efficient switch and synchronous rectifier combination for use in buck
converters.
Features
VDS
ID (at VGS=10V)
30V
6.9A
RDS(ON) (at VGS=10V)
< 27mΩ
RDS(ON) (at VGS = 4.5V)
< 32mΩ
RDS(ON) (at VGS = 2.5V)
< 50mΩ
D1
D1
Top View
S2
G2
S1
G1
1
2
3
4
8
7
6
5
D2
D2
D1
D1
G2
G1
S1
Absolute Maximum Ratings TA=25°C unless otherwise noted
Symbol
Parameter
Drain-Source Voltage
VDS
Gate-Source Voltage
Continuous Drain
Current
VGS
TA=25°C
Units
V
±12
V
5.8
A
Pulsed Drain Current C
IDM
Avalanche Current C
IAS, IAR
14
A
Avalanche energy L=0.1mH C
TA=25°C
EAS, EAR
10
mJ
Power Dissipation B
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Lead
30
2
PD
TA=70°C
Junction and Storage Temperature Range
1/6
Maximum
30
6.9
ID
TA=70°C
S2
TJ, TSTG
Symbol
t ≤ 10s
Steady-State
Steady-State
W
1.3
RθJA
RθJL
-55 to 150
Typ
48
74
32
°C
Max
62.5
90
40
Units
°C/W
°C/W
°C/W
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AO4800B
30V
Dual N-Channel MOSFET
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
IDSS
Zero Gate Voltage Drain Current
Conditions
Min
ID=250µA, VGS=0V
30
TJ=55°C
5
Gate-Body leakage current
VDS=0V, VGS= ±12V
Gate Threshold Voltage
VDS=VGS ID=250µA
0.7
ID(ON)
On state drain current
VGS=4.5V, VDS=5V
30
100
nA
1.5
V
17.8
27
28
40
VGS=4.5V, ID=6A
19
32
mΩ
VGS=2.5V, ID=5A
24
50
mΩ
1
V
2.5
A
TJ=125°C
A
gFS
Forward Transconductance
VDS=5V, ID=5A
33
VSD
Diode Forward Voltage
IS=1A,VGS=0V
0.7
IS
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
VGS=0V, VDS=15V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
Gate Source Charge
Qgd
Gate Drain Charge
tD(on)
Turn-On DelayTime
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
VGS=4.5V, VDS=15V, ID=6.9A
1.5
mΩ
S
630
pF
75
pF
50
SWITCHING PARAMETERS
Qg
Total Gate Charge
Qgs
µA
1.1
VGS=10V, ID=6.9A
Coss
Units
V
1
VGS(th)
Static Drain-Source On-Resistance
Max
VDS=30V, VGS=0V
IGSS
RDS(ON)
Typ
pF
3
4.5
Ω
6
7
nC
1.3
nC
1.8
nC
3
ns
VGS=10V, VDS=15V, RL=2.2Ω,
RGEN=3Ω
2.5
ns
25
ns
tf
Turn-Off Fall Time
4
ns
trr
Body Diode Reverse Recovery Time
IF=6.9A, dI/dt=100A/µs
8.5
Qrr
Body Diode Reverse Recovery Charge IF=6.9A, dI/dt=100A/µs
2.6
ns
nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
value in any given application depends on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initialTJ=25°C.
D. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2 FR-4 board with
2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
2/6
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AO4800B
30V
Dual N-Channel MOSFET
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
40
15
10V
35
3V
VDS=5V
4.5V
12
30
2.5V
9
ID(A)
ID (A)
25
20
6
15
10
3
VGS=2V
25°C
125°C
5
0
0
0
1
2
3
4
0
5
30
1
1.5
2
2.5
3
Normalized On-Resistance
1.8
25
RDS(ON) (mΩ
Ω)
0.5
VGS(Volts)
Figure 2: Transfer Characteristics (Note E)
VDS (Volts)
Fig 1: On-Region Characteristics (Note E)
VGS=4.5V
20
15
VGS=10V
VGS=4.5V
ID=6A
1.6
1.4
17
5
VGS=10V
2
ID=6.9A
10
1.2
1
0.8
10
0
0
5
10
15
20
ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
25
50
75
100
125
150
175
0
Temperature (°C)
Figure 4: On-Resistance vs. Junction
18Temperature
(Note E)
1.0E+01
50
ID=6.9A
1.0E+00
1.0E-01
125°C
30
IS (A)
RDS(ON) (mΩ
Ω)
40
125°C
25°C
1.0E-02
1.0E-03
20
1.0E-04
25°C
1.0E-05
10
0
4
6
8
10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
3/6
2
0.0
0.2
0.4
0.6
0.8
1.0
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
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AO4800B
30V
Dual N-Channel MOSFET
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
5
1000
VDS=15V
ID=6.9A
800
Ciss
Capacitance (pF)
VGS (Volts)
4
3
2
600
400
Coss
1
200
0
0
0
2
4
6
Qg (nC)
Figure 7: Gate-Charge Characteristics
Crss
0
8
100.0
5
10
15
20
25
VDS (Volts)
Figure 8: Capacitance Characteristics
30
100.0
IAR (A) Peak Avalanche Current
TA=25°C
TA=100°C
ID (Amps)
TA=150°C
10.0
10µs
10.0
RDS(ON)
limited
100µs
1.0
1ms
10ms
TA=125°C
0.1
DC
TJ(Max)=150°C
TA=25°C
10s
0.0
1.0
0.01
1
10
100
1000
Time in avalanche, tA (µ
µs)
Figure 9: Single Pulse Avalanche capability (Note C)
0.1
1
VDS (Volts)
10
100
Figure 10: Maximum Forward Biased Safe
Operating Area (Note F)
10000
TA=25°C
Power (W)
1000
100
10
1
0.00001
0.001
0.1
10
1000
Pulse Width (s)
Figure 11: Single Pulse Power Rating Junction-to-Ambient (Note F)
4/6
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AO4800B
30V
Dual N-Channel MOSFET
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
Zθ JA Normalized Transient
Thermal Resistance
10
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
1
RθJA=90°C/W
0.1
PD
0.01
Single Pulse
Ton
T
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 12: Normalized Maximum Transient Thermal Impedance (Note F)
5/6
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AO4800B
30V
Dual N-Channel MOSFET
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
+ Vds
VDC
-
Qgs
Qgd
VDC
-
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & W aveforms
RL
Vds
Vds
90%
+ Vdd
DUT
Vgs
VDC
-
Rg
10%
Vgs
Vgs
t d(on)
tr
t d(off)
t on
tf
toff
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
2
E AR = 1/2 LIAR
Vds
BVDSS
Vds
Id
+ Vdd
Vgs
Vgs
I AR
VDC
-
Rg
Id
DUT
Vgs
Vgs
Diode Recovery Test Circuit & W aveforms
Q rr = - Idt
Vds +
DUT
Vgs
Vds Isd
Vgs
Ig
6/6
L
Isd
+ Vdd
t rr
dI/dt
I RM
Vdd
VDC
-
IF
Vds
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