AO4627 30V Complementary MOSFET General Description The AO4627 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This complementary N and P channel MOSFET configuration is ideal for low Input Voltage inverter application s. Features N-Channel VDS= 30V P-Channel -30V ID= 4.5A (VGS=10V) -3.5A (VGS=-10V) RDS(ON) RDS(ON) < 50mΩ (VGS=10V) < 100mΩ (VGS=-10V) < 68mΩ (VGS=4.5V) < 165mΩ (VGS=-4.5V) D1 D2 Top View S2 G2 S1 G1 1 2 3 4 8 7 6 5 D2 D2 D1 D1 G2 G1 S2 n-channel Absolute Maximum Ratings TA=25°C unless otherwise noted Symbol Max n-channel Parameter Drain-Source Voltage VDS 30 Gate-Source Voltage VGS TA=25°C Continuous Drain Current ID TA=70°C p-channel Max p-channel -30 Units V ±20 ±20 V 4.5 -3.5 A 3.5 -2.5 Pulsed Drain Current C IDM 25 -20 Avalanche Current C IAS, IAR 8 -8 A Avalanche energy L=0.1mH C EAS, EAR 3 3 mJ 2 2 1.3 1.3 TA=25°C Power Dissipation B PD TA=70°C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Lead 1/9 S1 TJ, TSTG Symbol t ≤ 10s Steady-State Steady-State RθJA RθJL -55 to 150 Typ 48 74 32 W °C Max 62.5 90 40 Units °C/W °C/W °C/W www.freescale.net.cn AO4627 30V Complementary MOSFET N-Channel Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=250µA, VGS=0V Max 30 1 Zero Gate Voltage Drain Current IGSS Gate-Body leakage current VDS=0V, VGS=±20V VGS(th) Gate Threshold Voltage VDS=VGS，ID=250µA 1.5 ID(ON) On state drain current VGS=10V, VDS=5V 25 Units V VDS=30V, VGS=0V IDSS TJ=55°C 5 µA ±100 nA 2 2.5 V 39 50 63 78 VGS=4.5V, ID=3A 50 68 10 VGS=10V, ID=4.5A RDS(ON) Typ Static Drain-Source On-Resistance TJ=125°C gFS Forward Transconductance VDS=5V, ID=4.5A VSD Diode Forward Voltage IS=1A,VGS=0V IS Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Input Capacitance Ciss A 0.79 mΩ mΩ S 1 V 2.5 A 135 170 210 pF VGS=0V, VDS=15V, f=1MHz 25 35 45 pF 13 23 33 pF VGS=0V, VDS=0V, f=1MHz 1.7 3.5 5.3 Ω SWITCHING PARAMETERS Qg(10V) Total Gate Charge 4.05 5 nC Qg(4.5V) Total Gate Charge 2 3 nC Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime VGS=10V, VDS=15V, ID=4.5A VGS=10V, VDS=15V, RL=3.3Ω, RGEN=3Ω 0.55 nC 1 nC 4.5 ns 1.5 ns 18.5 ns tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time IF=4.5A, dI/dt=100A/µs 7.5 Qrr Body Diode Reverse Recovery Charge IF=4.5A, dI/dt=100A/µs 2.5 15.5 ns 10 ns nC A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initialTJ=25°C. D. The RθJA is the sum of the thermal impedance from junction to lead RθJL and lead to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-ambient thermal impedance which is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating. 2/9 www.freescale.net.cn AO4627 30V Complementary MOSFET N-Channel: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 15 10V VDS=5V 4.5V 12 4V 8 7V ID(A) 6 ID (A) 9 3.5V 6 3 2 VGS=3V 0 25°C 0 0 1 2 3 4 5 1 VDS (Volts) Fig 1: On-Region Characteristics (Note E) 2 3 4 5 VGS(Volts) Figure 2: Transfer Characteristics (Note E) 2 Normalized On-Resistance 60 VGS=4.5V RDS(ON) (mΩ Ω) 125°C 4 50 40 VGS=10V 30 1.8 VGS=10V ID=4.5A 1.6 17 5 2 VGS=4.5V 10 I =3A 1.4 1.2 D 1 0.8 0 2 4 6 8 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 10 0 110 25 50 75 100 125 150 175 Temperature (°C) 0 Figure 4: On-Resistance vs. Junction Temperature 18 (Note E) 1.0E+02 ID=4.5A 1.0E+01 40 1.0E+00 IS (A) RDS(ON) (mΩ Ω) 90 125°C 70 1.0E-01 1.0E-02 1.0E-03 50 125°C 25°C 1.0E-04 25°C 30 1.0E-05 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) 3/9 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) www.freescale.net.cn AO4627 30V Complementary MOSFET N-Channel: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 300 10 VDS=15V ID=4.5A 250 Capacitance (pF) VGS (Volts) 8 6 4 200 Ciss 150 100 Coss 2 50 Crss 0 0 0 1 2 3 4 Qg (nC) Figure 7: Gate-Charge Characteristics 0 5 5 10 15 20 25 VDS (Volts) Figure 8: Capacitance Characteristics 30 1000 100.0 TA=25°C 10µs RDS(ON) limited 100 100µs 1.0 1ms 10ms 0.1 TJ(Max)=150°C TA=25°C DC Power (W) ID (Amps) 10.0 10 10s 1 0.0 0.01 0.1 1 VDS (Volts) 10 Figure 9: Maximum Forward Biased Safe Operating Area (Note F) 100 0.00001 0.001 0.1 10 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-to-Ambient (Note F) Zθ JA Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA 1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse RθJA=90°C/W 0.1 PD 0.01 Ton T 0.001 0.00001 4/9 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) 100 1000 www.freescale.net.cn AO4627 30V Complementary MOSFET Gate Charge Test Circuit & W aveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC - DUT Vgs Ig Charge Resistive Switching Test Circuit & W aveforms RL Vds Vds Vgs 90% + Vdd DUT VDC - Rg 10% Vgs Vgs t d(on) tr t d(off) ton tf toff Unclamped Inductive Switching (UIS) Test Circuit & W aveforms L 2 E AR = 1/2 LIAR Vds BVDSS Vds Id + Vdd Vgs Vgs I AR VDC - Rg Id DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vgs Vds Isd Vgs Ig 5/9 L Isd + Vdd t rr dI/dt I RM Vdd VDC - IF Vds www.freescale.net.cn AO4627 30V Complementary MOSFET P-Channel Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS Drain-Source Breakdown Voltage BVDSS Conditions Min ID=-250µA, VGS=0V VDS=-30V, VGS=0V -30 IDSS Zero Gate Voltage Drain Current IGSS Gate-Body leakage current VDS=0V, VGS=±20V VGS(th) Gate Threshold Voltage ID(ON) On state drain current VDS=VGS, ID=-250µA VGS=-10V, VDS=-5V VGS=-10V, ID=-3.5A RDS(ON) Typ -5 -1.4 VGS=-4.5V, ID=-2A VDS=-5V, ID=-3.5A IS=-1A,VGS=0V gFS Forward Transconductance VSD Diode Forward Voltage IS Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Ciss Input Capacitance µA ±100 nA -1.9 -2.4 V 78 100 111 140 120 165 mΩ -1 V -2.5 A -20 TJ=125°C Units V -1 TJ=55°C Static Drain-Source On-Resistance Max A 6 mΩ S -0.8 155 197 240 pF VGS=0V, VDS=-15V, f=1MHz 28 42 55 pF 15 26 37 pF VGS=0V, VDS=0V, f=1MHz 3.5 7.2 11 Ω SWITCHING PARAMETERS Qg(10V) Total Gate Charge 4.3 5.2 nC Qg(4.5V) Total Gate Charge 2.2 3 nC Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time Qrr VGS=10V, VDS=-15V, ID=-3.5A 0.7 nC 1.1 nC 7.5 ns 4.1 ns 11.8 ns VGS=10V, VDS=-15V, RL=4Ω, RGEN=3Ω IF=-3.5A, dI/dt=100A/µs 11.3 Body Diode Reverse Recovery Charge IF=-3.5A, dI/dt=100A/µs 4.4 3.8 ns 14 ns nC A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initialTJ=25°C. D. The RθJA is the sum of the thermal impedance from junction to lead RθJL and lead to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-ambient thermal impedance which is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating. 6/9 www.freescale.net.cn AO4627 30V Complementary MOSFET P-Channel: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 15 -10V VDS=-5V -6V -8V 12 8 -5V 6 -ID(A) -ID (A) 9 -4.5V 4 6 125°C -4V 2 3 25°C VGS=-3.5V 0 0 0 1 2 3 4 1 5 -VDS (Volts) Fig 1: On-Region Characteristics (Note E) 2 3 4 5 6 -VGS(Volts) Figure 2: Transfer Characteristics (Note E) 200 1.6 Normalized On-Resistance 180 160 RDS(ON) (mΩ Ω) VGS=-4.5V 140 120 100 80 VGS=-10V 60 40 VGS=-10V ID=-3.5A 1.4 17 5 2 VGS=-4.5V 10 1.2 1 ID=-2A 0.8 0 2 4 6 8 -ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 10 0 25 50 75 100 125 150 175 Temperature (°C) 0 Figure 4: On-Resistance vs. Junction Temperature 18 (Note E) 1.0E+02 300 ID=-3.5A 1.0E+01 260 40 1.0E+00 -IS (A) RDS(ON) (mΩ Ω) 220 180 125°C 1.0E-01 1.0E-02 125°C 25°C 140 1.0E-03 100 25°C 1.0E-04 60 1.0E-05 2 4 6 8 10 -VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) 7/9 0.0 0.2 0.4 0.6 0.8 1.0 1.2 -VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) www.freescale.net.cn AO4627 30V Complementary MOSFET P-Channel: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 300 10 VDS=-15V ID=-3.5A 250 Ciss Capacitance (pF) -VGS (Volts) 8 6 4 200 150 100 2 50 0 0 Coss Crss 0 1 2 3 4 Qg (nC) Figure 7: Gate-Charge Characteristics 5 10 15 20 25 -VDS (Volts) Figure 8: Capacitance Characteristics 30 1000 100.0 TA=25°C 10µs RDS(ON) limited 100µs 1.0 1ms 10ms 0.1 TJ(Max)=150°C TA=25°C 100 Power (W) 10.0 -ID (Amps) 0 5 10 10s DC 0.0 1 0.01 0.1 1 -VDS (Volts) 10 100 0.00001 Figure 9: Maximum Forward Biased Safe Operating Area (Note F) 0.001 0.1 10 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junctionto-Ambient (Note F) Zθ JA Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA 1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse RθJA=90°C/W 0.1 PD 0.01 Ton T 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) 8/9 www.freescale.net.cn AO4627 30V Complementary MOSFET Gate Charge Test Circuit & W aveform Vgs Qg -10V - - VDC + VDC Qgs Vds Qgd + DUT Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds t off ton Vgs - DUT Vgs VDC td(on) td(off) tr tf 90% Vdd + Rg Vgs 10% Vds Unclamped Inductive Switching (UIS) Test Circuit & Waveforms 2 L E AR= 1/2 LIAR Vds Vds Id - Vgs Vgs VDC + Rg BVDSS Vdd Id I AR DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vds - Isd Vgs Ig 9/9 Vgs L -Isd + Vdd t rr dI/dt -I RM Vdd VDC - -I F -Vds www.freescale.net.cn