AO6415 20V P-Channel MOSFET General Description The AO6415 uses advanced trench technology to provide excellent R DS(ON) , low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. Features VDS -20V ID (at VGS=-10V) -3.3A RDS(ON) (at VGS= -10V) < 82mΩ RDS(ON) (at VGS= -4.5V) < 100mΩ RDS(ON) (at VGS= -2.5V) < 140mΩ Typical ESD protection HBM Class 2 D Top View D 1 6 D 2 5 D 4 S G 3 D G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current VGS TA=25°C Pulsed Drain Current C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Lead 1/5 Steady-State Steady-State A 1.25 W 0.8 TJ, TSTG Symbol t ≤ 10s V -17 PD TA=70°C ±12 -2.7 IDM TA=25°C Power Dissipation B Units V -3.3 ID TA=70°C Maximum -20 RθJA RθJL -55 to 150 Typ 82 111 56 °C Max 100 140 70 Units °C/W °C/W °C/W www.freescale.net.cn AO6415 20V P-Channel MOSFET Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS Drain-Source Breakdown Voltage BVDSS IDSS Zero Gate Voltage Drain Current Conditions Min ID=-250µA, VGS=0V -20 -1 TJ=55°C -5 ±10 µA V 68 82 95 115 VGS=-4.5V, ID=-2A 80 100 mΩ VGS=-2.5V, ID=-1A 107 140 mΩ 8.6 -1 V -1.5 A VDS=VGS, ID=-250µΑ -0.5 ID(ON) On state drain current VGS=-4.5V, VDS=-5V -17 VGS=-10V, ID=-3.3A TJ=125°C gFS Forward Transconductance VDS=-5V, ID=-3.3A VSD Diode Forward Voltage IS=-1A,VGS=0V IS Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Reverse Transfer Capacitance Rg Gate resistance VGS=0V, VDS=-10V, f=1MHz VGS=0V, VDS=0V, f=1MHz SWITCHING PARAMETERS Qg Total Gate Charge Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime µA -1.2 VDS=0V, VGS= ±12V Gate Threshold Voltage Crss Units -0.85 Gate-Body leakage current VGS(th) Static Drain-Source On-Resistance Max V VDS=-20V, VGS=0V IGSS RDS(ON) Typ VGS=-4.5V, VDS=-10V, ID=-2A A -0.76 mΩ S 250 325 400 pF 40 63 85 pF 22 37 52 pF 11.2 17 Ω 3.2 4.5 nC 0.6 nC 0.9 nC 11 ns VGS=-4.5V, VDS=-10V, RL=5Ω, RGEN=3Ω 5.5 ns 22 ns tf Turn-Off Fall Time 8 ns trr Body Diode Reverse Recovery Time IF=-2A, dI/dt=100A/µs 6.1 Qrr Body Diode Reverse Recovery Charge IF=-2A, dI/dt=100A/µs 1.4 ns nC A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initialTJ=25°C. D. The RθJA is the sum of the thermal impedance from junction to lead RθJL and lead to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-ambient thermal impedance which is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating. 2/5 www.freescale.net.cn AO6415 20V P-Channel MOSFET TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 12 30 -10V 25 9 -3.5V -ID(A) 20 -ID (A) VDS=-5V -4.5V 15 6 -2.5V 10 3 VGS=-2.0V 125°C 5 25°C 0 0 0 1 2 3 4 0 5 2 3 4 -VGS(Volts) Figure 2: Transfer Characteristics (Note E) -VDS (Volts) Fig 1: On-Region Characteristics (Note E) 170 Normalized On-Resistance 1.80 VGS=-2.5V 140 RDS(ON) (mΩ Ω) 1 110 VGS=-4.5V 80 VGS=-10V 50 ID=-3.3A, VGS=-10V 1.60 ID=-2A, VGS=-4.5V 1.40 ID=-1A, VGS=-2.5V 1.20 1.00 0.80 20 0 0 2 6 8 -I4D (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature (Note E) 1.0E+01 180 ID=-3.3A 1.0E+00 150 125°C 125°C 25°C 1.0E-02 90 1.0E-03 25°C 60 1.0E-04 1.0E-05 30 0 4 6 8 -VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) 3/5 -IS (A) RDS(ON) (mΩ Ω) 1.0E-01 120 2 0.0 0.2 0.4 0.6 0.8 1.0 1.2 -VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) www.freescale.net.cn AO6415 20V P-Channel MOSFET TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 600 5 VDS=-10V ID=-2A 450 Capacitance (pF) -VGS (Volts) 4 3 2 Ciss 300 150 Coss 1 Crss 0 0 0 1 2 3 4 Qg (nC) Figure 7: Gate-Charge Characteristics 0 5 5 10 15 -VDS (Volts) Figure 8: Capacitance Characteristics 1000 100.0 TJ(Max)=150°C TA=25°C 10µs RDS(ON) limited 100µs Power (W) 10.0 -ID (Amps) 20 1ms 1.0 10ms 10 100ms DC 0.1 100 10s TJ(Max)=150°C TA=25°C 1 0.0 0.00001 0.01 0.1 1 -VDS (Volts) 10 0.001 0.1 10 1000 100 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note F) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) Zθ JA Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA 1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse RθJA=140°C/W 0.1 PD 0.01 Single Pulse Ton T 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) 4/5 www.freescale.net.cn AO6415 20V P-Channel MOSFET Gate Charge Test Circuit & Waveform Vgs Qg -10V - - VDC + VDC Qgd Qgs Vds + DUT Vgs Ig Charge R esistive Sw itching Test C ircuit & W aveform s RL V ds t o ff to n Vgs - DUT Vgs V DC td(o n) t d(o ff) tr tf 90% V dd + Rg V gs 10% V ds D iode R e covery Te st C ircuit & W aveform s Q rr = - V ds + Idt DUT V gs Vds Isd V gs Ig 5/5 L -Isd + V dd t rr dI/dt -I R M V dd VDC - -I F -Vds www.freescale.net.cn