AO6422 20V N-Channel MOSFET General Description The AO6422 uses advanced trench technology to provide excellent R DS(ON) , low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for general purpose application. Features VDS = 20V ID = 5A (VGS = 4.5V) RDS(ON) < 44mΩ (VGS = 4.5V) RDS(ON) < 55mΩ (VGS = 2.5V) RDS(ON) < 72mΩ (VGS = 1.8V) D Top View D 1 6 D D 2 5 D G 3 4 S G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol 10 Sec Drain-Source Voltage VDS 20 Units V Gate-Source Voltage ±8 V VGS TA=25°C Continuous Drain A Current Pulsed Drain Current Power Dissipation A 5 TA=70°C ID B TA=25°C 4.2 3 TA=70°C Maximum Junction-to-Lead C TJ, TSTG Symbol t ≤ 10s Steady State Steady State A 30 PD Junction and Storage Temperature Range 1/4 3.9 IDM Thermal Characteristics Parameter A Maximum Junction-to-Ambient A Maximum Junction-to-Ambient Steady State RθJA RθJL 2.0 1.1 1.3 0.7 -55 to 150 Typ 47.5 74 54 W °C Max 62.5 110 68 Units °C/W °C/W °C/W www.freescale.net.cn AO6422 20V N-Channel MOSFET Electrical Characteristics (TJ=25°C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current Conditions Min ID = 250µA, VGS = 0V Typ V 1 TJ = 55°C 5 ±100 nA 1 V 35 44 48 60 VGS = 2.5V, ID = 4.5A 43 55 mΩ 72 mΩ Gate-Body leakage current VDS = 0V, VGS = ±8V Gate Threshold Voltage VDS = VGS ID = 250µA 0.4 ID(ON) On state drain current VGS = 4.5V, VDS = 5V 30 VGS = 4.5V, ID = 5.0A TJ=125°C A RDS(ON) Static Drain-Source On-Resistance VGS = 1.8V, ID = 3.5A 55 gFS Forward Transconductance VDS = 5V, ID = 5.0A 14 VSD Diode Forward Voltage IS = 1A,VGS = 0V 0.8 IS Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Ciss Input Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance µA 0.65 IGSS Output Capacitance Units 20 VDS = 20V, VGS = 0V VGS(th) Coss Max 450 mΩ S 1 V 2 A 560 pF VGS=0V, VDS=10V, f=1MHz 74 VGS=0V, VDS=0V, f=1MHz 4.9 7.5 Ω 6.2 8.2 nC pF 52 SWITCHING PARAMETERS Qg (4.5V) Total Gate Charge VGS= 4.5V, VDS= 10V, ID= 5A Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf trr Turn-Off Fall Time Body Diode Reverse Recovery Time IF=5A, dI/dt=100A/µs 13 Qrr Body Diode Reverse Recovery Charge IF=5A, dI/dt=100A/µs 3.3 VGS=4.5V, VDS=10V, RL=2Ω, RGEN=3Ω pF 0.4 nC 1.3 nC 4.5 ns 6 ns 33 ns 7.1 ns 17 ns nC A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A = 25°C. in any given application depends on the user's specific board design. The current rating is based on the t ≤10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using t ≤ 300µs pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA curve provides a single pulse rating. Rev2: Feb. 2012 2/4 www.freescale.net.cn AO6422 20V N-Channel MOSFET TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 30 4.5V VDS= 5V 3V 2.5V 25 8 20 6 ID(A) ID (A) 2V 15 4 10 VGS=1.5V 2 5 125°C 0 0 1 2 3 4 0 5 0.4 0.8 1.2 1.6 2 VGS(Volts) Figure 2: Transfer Characteristics VDS (Volts) Figure 1: On-Region Characteristics 70 Normalized On-Resistance 1.6 VGS= 1.8V 62 RDS(ON) (mΩ Ω) 25°C 0 54 46 VGS= 2.5V 38 VGS= 4.5V 30 0 3 1.2 1.0 0.8 I9F=-6.5A,12 dI/dt=100A/µs 15 6 VGS= 4.5V ID= 5A 1.4 0 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 120 1E+01 ID= 5.0A 1E+00 100 1E-02 IS (A) RDS(ON) (mΩ Ω) 1E-01 80 125°C 60 125°C 1E-03 25°C 1E-04 40 25°C FUNCTIONS AND RELIABILITY WITHOUT NOTICE. 20 1 2 3 4 5 6 1E-05 7 8 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 3/4 1E-06 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics www.freescale.net.cn AO6422 20V N-Channel MOSFET TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 800 5 VDS= 10V ID= 5A Capacitance (pF) VGS (Volts) 4 3 2 600 Ciss 400 200 1 0 Coss Crss 0 0 1 2 3 4 5 6 7 0 5 Qg (nC) Figure 7: Gate-Charge Characteristics 20 TJ(Max)=150°C TA=25°C RDS(ON) limited 10µs 100µs Power (W) ID (Amps) 15 1000 100 10 10 VDS (Volts) Figure 8: Capacitance Characteristics 1ms 1 10ms 100mss 10s 0.1 TJ(Max)=150°C TA=25°C 10 DC 0.01 0.1 100 IF=-6.5A, dI/dt=100A/µs 1 10 VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 100 1 0.00001 0.001 0.1 10 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junctionto-Ambient (Note E) Zθ JA Normalized Transient Thermal Resistance 10 1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=110°C/W 0.1 PD 0.01 Ton Single Pulse T 0.001 0.00001 4/4 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance(Note E) 100 1000 www.freescale.net.cn