SHENZHENFREESCALE AO3421E

AO3421E
30V P-Channel MOSFET
General Description
The AO3421E combines advanced trench MOSFET technology with a low resistance package to provide
extremely low RDS(ON) . This device is ideal for load switch and battery protection applications.
Features
VDS
-30V
ID (at VGS=-10V)
-3A
RDS(ON) (at VGS=-10V)
< 95mΩ
RDS(ON) (at VGS=-4.5V)
< 160mΩ
Typical ESD protection
HBM Class 2
D
G
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Symbol
Parameter
VDS
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain
Current
VGS
TA=25°C
Pulsed Drain Current C
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Lead
1/5
Steady-State
Steady-State
A
1.4
W
0.9
TJ, TSTG
Symbol
t ≤ 10s
V
-18
PD
TA=70°C
±20
-2
IDM
TA=25°C
Power Dissipation B
Units
V
-3
ID
TA=70°C
Maximum
-30
RθJA
RθJL
-55 to 150
Typ
70
100
63
°C
Max
90
125
80
Units
°C/W
°C/W
°C/W
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AO3421E
30V P-Channel MOSFET
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
Drain-Source Breakdown Voltage
BVDSS
Conditions
Min
ID=-250µA, VGS=0V
-30
-1
Zero Gate Voltage Drain Current
IGSS
Gate-Body leakage current
VDS=0V, VGS=±16V
VGS(th)
Gate Threshold Voltage
VDS=VGS,ID=-250µA
-1.4
ID(ON)
On state drain current
VGS=-10V, VDS=-5V
-18
TJ=55°C
VGS=-10V, ID=-3A
Static Drain-Source On-Resistance
TJ=125°C
VGS=-4.5V, ID=-2A
gFS
Forward Transconductance
VDS=-5V, ID=-3A
VSD
Diode Forward Voltage
IS=-1A,VGS=0V
IS
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
Max
VGS=0V, VDS=-15V, f=1MHz
Units
V
VDS=-30V, VGS=0V
IDSS
RDS(ON)
Typ
-5
µA
±10
µA
-2
-2.5
V
78
95
112
135
120
160
A
6
-0.8
mΩ
mΩ
S
-1
V
-1.5
A
215
pF
46.5
pF
27.5
pF
9.5
19
Ω
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
4.6
8
nC
Qg(4.5V) Total Gate Charge
2.2
4
nC
Qgs
Gate Source Charge
Qgd
Gate Drain Charge
VGS=0V, VDS=0V, f=1MHz
VGS=-10V, VDS=-15V, ID=-3A
0.85
nC
1.2
nC
tD(on)
Turn-On DelayTime
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf
Turn-Off Fall Time
trr
Body Diode Reverse Recovery Time
IF=-3A, dI/dt=500A/µs
Qrr
Body Diode Reverse Recovery Charge IF=-3A, dI/dt=500A/µs
16
VGS=-10V, VDS=-15V, RL=5Ω,
RGEN=3Ω
8
ns
4
ns
13.5
ns
4
ns
9
ns
nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
value in any given application depends on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initialTJ=25°C.
D. The RθJA is the sum of the thermal impedance from junction to lead RθJL and lead to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-ambient thermal impedance which is measured with the device mounted on 1in2 FR-4 board with
2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
2/5
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AO3421E
30V P-Channel MOSFET
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
20
10
-10V
VDS=-5V
-6V
-7V
8
-5V
6
-4.5V
-ID(A)
-ID (A)
15
10
5
-4V
4
-3.5V
2
125°C
25°C
VGS=-3.0V
0
0
0
1
2
3
4
0
5
150
Normalized On-Resistance
VGS=-4.5V
RDS(ON) (mΩ
Ω)
130
120
110
100
90
VGS=-10V
80
3
4
5
6
1.6
VGS=-10V
ID=-3A
1.4
17
5
2
VGS=-4.5V
10
1.2
ID=-2A
1
0.8
70
0
1
0
2
3
4
5
6
-ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
25
50
75
100
125
150
175
0
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
18
(Note E)
250
1.0E+01
ID=-3A
230
1.0E+00
210
40
190
1.0E-01
170
150
-IS (A)
RDS(ON) (mΩ
Ω)
2
1.8
140
125°C
1.0E-02
125°C
130
1.0E-03
110
90
1.0E-04
70
25°C
25°C
1.0E-05
50
2
6
8
-VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
3/5
1
-VGS(Volts)
Figure 2: Transfer Characteristics (Note E)
-VDS (Volts)
Fig 1: On-Region Characteristics (Note E)
4
10
0.0
0.2
0.4
0.6
0.8
1.0
1.2
-VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
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AO3421E
30V P-Channel MOSFET
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
300
10
VDS=-15V
ID=-3A
250
Capacitance (pF)
-VGS (Volts)
8
6
4
Ciss
200
150
100
2
Coss
50
0
Crss
0
0
1
2
3
4
Qg (nC)
Figure 7: Gate-Charge Characteristics
5
0
5
10
15
20
25
-VDS (Volts)
Figure 8: Capacitance Characteristics
30
10000
100.0
TA=25°C
10µs
RDS(ON)
limited
100µs
1.0
1ms
10ms
1000
Power (W)
-ID (Amps)
10.0
100
10
0.1
TJ(Max)=150°C
TA=25°C
10s
DC
1
0.0
0.00001
0.01
0.1
1
-VDS (Volts)
10
0.001
0.1
10
1000
100
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toAmbient (Note F)
Figure 9: Maximum Forward Biased
Safe Operating Area (Note F)
Zθ JA Normalized Transient
Thermal Resistance
10
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
RθJA=125°C/W
0.1
PD
0.01
Single Pulse
Ton
T
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
4/5
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AO3421E
30V P-Channel MOSFET
Gate Charge Test Circuit & Waveform
Vgs
Qg
-10V
-
-
VDC
+
VDC
Qgd
Qgs
Vds
+
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
toff
ton
Vgs
-
DUT
Vgs
VDC
td(on)
t d(off)
tr
tf
90%
Vdd
+
Rg
Vgs
10%
Vds
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
2
L
E AR= 1/2 LIAR
Vds
Vds
Id
-
Vgs
Vgs
VDC
+
Rg
BVDSS
Vdd
Id
I AR
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Q rr = - Idt
Vds +
DUT
Vgs
Vds Isd
Vgs
Ig
5/5
L
-Isd
+ Vdd
t rr
dI/dt
-I RM
Vdd
VDC
-
-I F
-Vds
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