AO3421E 30V P-Channel MOSFET General Description The AO3421E combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON) . This device is ideal for load switch and battery protection applications. Features VDS -30V ID (at VGS=-10V) -3A RDS(ON) (at VGS=-10V) < 95mΩ RDS(ON) (at VGS=-4.5V) < 160mΩ Typical ESD protection HBM Class 2 D G S Absolute Maximum Ratings TA=25°C unless otherwise noted Symbol Parameter VDS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current VGS TA=25°C Pulsed Drain Current C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Lead 1/5 Steady-State Steady-State A 1.4 W 0.9 TJ, TSTG Symbol t ≤ 10s V -18 PD TA=70°C ±20 -2 IDM TA=25°C Power Dissipation B Units V -3 ID TA=70°C Maximum -30 RθJA RθJL -55 to 150 Typ 70 100 63 °C Max 90 125 80 Units °C/W °C/W °C/W www.freescale.net.cn AO3421E 30V P-Channel MOSFET Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS Drain-Source Breakdown Voltage BVDSS Conditions Min ID=-250µA, VGS=0V -30 -1 Zero Gate Voltage Drain Current IGSS Gate-Body leakage current VDS=0V, VGS=±16V VGS(th) Gate Threshold Voltage VDS=VGS，ID=-250µA -1.4 ID(ON) On state drain current VGS=-10V, VDS=-5V -18 TJ=55°C VGS=-10V, ID=-3A Static Drain-Source On-Resistance TJ=125°C VGS=-4.5V, ID=-2A gFS Forward Transconductance VDS=-5V, ID=-3A VSD Diode Forward Voltage IS=-1A,VGS=0V IS Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance Max VGS=0V, VDS=-15V, f=1MHz Units V VDS=-30V, VGS=0V IDSS RDS(ON) Typ -5 µA ±10 µA -2 -2.5 V 78 95 112 135 120 160 A 6 -0.8 mΩ mΩ S -1 V -1.5 A 215 pF 46.5 pF 27.5 pF 9.5 19 Ω SWITCHING PARAMETERS Qg(10V) Total Gate Charge 4.6 8 nC Qg(4.5V) Total Gate Charge 2.2 4 nC Qgs Gate Source Charge Qgd Gate Drain Charge VGS=0V, VDS=0V, f=1MHz VGS=-10V, VDS=-15V, ID=-3A 0.85 nC 1.2 nC tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time IF=-3A, dI/dt=500A/µs Qrr Body Diode Reverse Recovery Charge IF=-3A, dI/dt=500A/µs 16 VGS=-10V, VDS=-15V, RL=5Ω, RGEN=3Ω 8 ns 4 ns 13.5 ns 4 ns 9 ns nC A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initialTJ=25°C. D. The RθJA is the sum of the thermal impedance from junction to lead RθJL and lead to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-ambient thermal impedance which is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating. THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. 2/5 www.freescale.net.cn AO3421E 30V P-Channel MOSFET TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 20 10 -10V VDS=-5V -6V -7V 8 -5V 6 -4.5V -ID(A) -ID (A) 15 10 5 -4V 4 -3.5V 2 125°C 25°C VGS=-3.0V 0 0 0 1 2 3 4 0 5 150 Normalized On-Resistance VGS=-4.5V RDS(ON) (mΩ Ω) 130 120 110 100 90 VGS=-10V 80 3 4 5 6 1.6 VGS=-10V ID=-3A 1.4 17 5 2 VGS=-4.5V 10 1.2 ID=-2A 1 0.8 70 0 1 0 2 3 4 5 6 -ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 25 50 75 100 125 150 175 0 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 18 (Note E) 250 1.0E+01 ID=-3A 230 1.0E+00 210 40 190 1.0E-01 170 150 -IS (A) RDS(ON) (mΩ Ω) 2 1.8 140 125°C 1.0E-02 125°C 130 1.0E-03 110 90 1.0E-04 70 25°C 25°C 1.0E-05 50 2 6 8 -VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) 3/5 1 -VGS(Volts) Figure 2: Transfer Characteristics (Note E) -VDS (Volts) Fig 1: On-Region Characteristics (Note E) 4 10 0.0 0.2 0.4 0.6 0.8 1.0 1.2 -VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) www.freescale.net.cn AO3421E 30V P-Channel MOSFET TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 300 10 VDS=-15V ID=-3A 250 Capacitance (pF) -VGS (Volts) 8 6 4 Ciss 200 150 100 2 Coss 50 0 Crss 0 0 1 2 3 4 Qg (nC) Figure 7: Gate-Charge Characteristics 5 0 5 10 15 20 25 -VDS (Volts) Figure 8: Capacitance Characteristics 30 10000 100.0 TA=25°C 10µs RDS(ON) limited 100µs 1.0 1ms 10ms 1000 Power (W) -ID (Amps) 10.0 100 10 0.1 TJ(Max)=150°C TA=25°C 10s DC 1 0.0 0.00001 0.01 0.1 1 -VDS (Volts) 10 0.001 0.1 10 1000 100 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note F) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) Zθ JA Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA 1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse RθJA=125°C/W 0.1 PD 0.01 Single Pulse Ton T 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) 4/5 www.freescale.net.cn AO3421E 30V P-Channel MOSFET Gate Charge Test Circuit & Waveform Vgs Qg -10V - - VDC + VDC Qgd Qgs Vds + DUT Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds toff ton Vgs - DUT Vgs VDC td(on) t d(off) tr tf 90% Vdd + Rg Vgs 10% Vds Unclamped Inductive Switching (UIS) Test Circuit & Waveforms 2 L E AR= 1/2 LIAR Vds Vds Id - Vgs Vgs VDC + Rg BVDSS Vdd Id I AR DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vgs Vds Isd Vgs Ig 5/5 L -Isd + Vdd t rr dI/dt -I RM Vdd VDC - -I F -Vds www.freescale.net.cn