AO4480 40V N-Channel MOSFET General Description The AO4480 uses advanced trench technology to provide excellent RDS(ON), low gate charge. It is ESD Protected. This device is suitable for use as a low side switch in SMPS and general purpose applications. Features VDS (V) = 40V ID = 14A (VGS = 10V) RDS(ON) < 11.5mΩ (VGS = 10V) RDS(ON) < 15.5mΩ (VGS = 4.5V) ESD Rating: 4KV HBM D G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current AF VGS TA=25°C Units V ±20 V 14 TA=70°C Pulsed Drain Current B TA=25°C Power Dissipation Maximum 40 IDSM 11 IDM 70 3.1 PD TA=70°C A W 2.0 Avalanche Current B IAR 30 A Repetitive avalanche energy 0.3mH B EAR 135 mJ Junction and Storage Temperature Range TJ, TSTG -55 to 150 °C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C 1/4 Symbol t ≤ 10s Steady-State Steady-State RθJA RθJL Typ 30 59 16 Max 40 75 24 Units °C/W °C/W °C/W www.freescale.net.cn AO4480 40V N-Channel MOSFET Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current Conditions Min ID=250uA, VGS=0V 5 Gate-Body leakage current VDS=0V, VGS= ±20V VGS(th) Gate Threshold Voltage VDS=VGS ID=250µA 1 ID(ON) On state drain current VGS=10V, VDS=5V 70 VGS=10V, ID=14A TJ=125°C VGS=4.5V, ID=5A ±100 µA 3 V 9 11.5 A 13 12 Forward Transconductance VDS=5V, ID=14A 50 VSD Diode Forward Voltage IS=1A,VGS=0V 0.7 IS Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Ciss Input Capacitance Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance 1600 VGS=0V, VDS=20V, f=1MHz VGS=0V, VDS=0V, f=1MHz uA 2 gFS Coss Units V 1 TJ=55°C Static Drain-Source On-Resistance Max 40 VDS=32V, VGS=0V IGSS RDS(ON) Typ mΩ 15.5 mΩ 1 V 4 A 1920 pF S 320 pF 100 pF 3.4 Ω SWITCHING PARAMETERS Qg(10V) Total Gate Charge 22 nC Qg(4.5V) Total Gate Charge 10.5 nC 4.2 nC 4.8 nC Qgs Gate Source Charge Qgd Gate Drain Charge VGS=10V, VDS=20V, ID=14A tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf trr Turn-Off Fall Time Body Diode Reverse Recovery Time IF=14A, dI/dt=100A/µs Qrr Body Diode Reverse Recovery Charge IF=14A, dI/dt=100A/µs 33 VGS=10V, VDS=20V, RL=1.5Ω, RGEN=3Ω 3.5 ns 6 ns 13.2 ns 3.5 ns 31 ns nC A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The value in any given application depends on the user's specific board design. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA curve provides a single pulse rating. F. The current rating is based on the t≤ 10s junction to ambient thermal resistance rating. Rev2: Nov. 2010 2/4 www.freescale.net.cn AO4480 40V N-Channel MOSFET TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 100 100 10V -40°C VDS=5V 5V 80 25°C 80 4V 125°C 60 ID(A) ID (A) 60 40 40 VGS=3.5V 20 20 VGS=3V -40°C 125°C 25°C 0 0 0 1 2 3 4 2 5 2.5 14 3.5 4 4.5 Normalized On-Resistance 12 10 VGS=10V 8 5 5.5 500 150 60 1.6 VGS=4.5V RDS(ON) (mΩ ) 3 VGS(Volts) Figure 2: Transfer Characteristics VDS (Volts) Figure 1: On-Region Characteristics VGS=10V ID=14A 1.4 1.2 VGS=4.5V ID=5A 1 0.8 6 0 5 10 15 20 25 0.6 30 -50 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 0 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 30 1.0E+01 1.0E+00 25 ID=14A 125°C 1.0E-01 20 IS (A) RDS(ON) (mΩ ) -25 125°C 15 1.0E-02 1.0E-03 -40°C 1.0E-04 10 25°C 25°C 1.0E-05 5 0.0 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 3/4 0.2 0.4 0.6 0.8 1.0 VSD (Volts) Figure 6: Body-Diode Characteristics www.freescale.net.cn 1.2 AO4480 40V N-Channel MOSFET TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 2400 10 VDS=20V ID=14A 2000 Capacitance (pF) VGS (Volts) 8 6 4 Ciss 1600 1200 800 Coss Crss 2 400 0 0 4 8 12 16 20 0 24 0 Qg (nC) Figure 7: Gate-Charge Characteristics 100.0 15 20 25 30 35 VDS (Volts) Figure 8: Capacitance Characteristics 10ms 80 1ms 1.0 10s 0.0 0.01 1s TJ(Max)=150°C Tc=25°C 60 40 DC TJ(Max)=150°C TA=25°C 0.1 Power (W) 100ms RDS(ON) limited 40 500 150 60 100 10.0 ID (Amps) 10 10µs 100µs 20 1 10 VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) 0.1 10 0 0.001 100 0.01 0.1 1 10 100 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note F) In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=75°C/W Zθ JA Normalized Transient Thermal Resistance 5 1 0.1 PD Ton Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1 T 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) 4/4 www.freescale.net.cn