AOT418L/AOB418L 100V N-Channel MOSFET General Description The AOT418L/AOB418L is fabricated with SDMOSTM trench technology that combines excellent RDS(ON) with low gate charge and low Qrr.The result is outstanding efficiency with controlled switching behavior. This universal technology is well suited for PWM, load switching and general purpose applications. Features VDS ID (at VGS=10V) 100V 105A RDS(ON) (at VGS=10V) < 10mΩ RDS(ON) (at VGS = 7V) < 12mΩ D G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage TC=25°C Continuous Drain Current G Pulsed Drain Current Continuous Drain Current C 82 IDM TA=25°C A 280 9.5 IDSM TA=70°C V 105 ID TC=100°C Units V A 7.5 Avalanche Current C IAS, IAR 60 A Avalanche energy L=0.1mH C EAS, EAR 180 mJ TC=25°C Power Dissipation B TC=100°C Junction and Storage Temperature Range 2.1 Steady-State Steady-State RθJA RθJC W 1.3 TJ, TSTG Symbol t ≤ 10s W 167 PDSM TA=70°C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case 333 PD TA=25°C Power Dissipation A 1/7 Maximum 100 ±25 -55 to 175 Typ 11 47 0.36 °C Max 15 60 0.45 Units °C/W °C/W °C/W www.freescale.net.cn AOT418L/AOB418L 100V N-Channel MOSFET Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current Conditions Min ID=250µA, VGS=0V VDS=100V, VGS=0V 100 50 IGSS Gate-Body leakage current VDS=0V, VGS= ±25V Gate Threshold Voltage VDS=VGS ID=250µA 2.6 ID(ON) On state drain current VGS=10V, VDS=5V 280 100 VGS=10V, ID=20A Static Drain-Source On-Resistance Reverse Transfer Capacitance Gate resistance SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qgs Gate Source Charge 8.2 10 15 18 mΩ 7.9 9.7 mΩ VGS=7V, ID=20A TO263 VDS=5V, ID=20A 8.8 50 11.7 mΩ S DYNAMIC PARAMETERS Ciss Input Capacitance Rg V A mΩ Diode Forward Voltage IS=1A,VGS=0V G Maximum Body-Diode Continuous Current Crss nA 12 VSD Output Capacitance 3.9 9.1 Forward Transconductance Coss 3.3 µA VGS=7V, ID=20A TO220 VGS=10V, ID=20A TO263 gFS IS TJ=125°C Units V TJ=55°C TO220 Max 10 VGS(th) RDS(ON) Typ 0.67 1 V 105 A 3460 4334 5200 pF VGS=0V, VDS=50V, f=1MHz 265 382 500 pF 78 131 185 pF VGS=0V, VDS=0V, f=1MHz 0.2 0.45 0.7 Ω 55 69 83 nC 16 20 24 nC 13 22 31 nC VGS=10V, VDS=50V, ID=20A Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time IF=20A, dI/dt=500A/µs 19 27 35 ns Qrr Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs 90 129 170 nC VGS=10V, VDS=50V, RL=2.5Ω, RGEN=3Ω 21 ns 15 ns 38 ns 12 ns A. The value of RθJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it. B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The RθJA is the sum of the thermal impedence from junction to case R θJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of T J(MAX)=175°C. The SOA curve provides a single pulse rating. G. The maximum current rating is package limited. H. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. 2/7 www.freescale.net.cn AOT418L/AOB418L 100V N-Channel MOSFET TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 100 100 10V VDS=5V 6V 80 80 7V 5.5V 60 ID(A) ID (A) 60 40 40 5V 125°C 20 20 25°C VGS=4.5V 0 0 0 1 2 3 4 2 5 12 Normalized On-Resistance VGS=7V 8 VGS=10V 6 6 7 2.2 VGS=10V ID=20A 2 1.8 17 5 2 VGS=7V 10 1.6 1.4 1.2 ID=20A 1 0.8 4 0 5 10 15 20 25 0 30 25 50 75 100 125 150 175 200 Temperature (°C) 0 Figure 4: On-Resistance vs. Junction 18 Temperature (Note E) ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 1.0E+02 20 ID=20A 1.0E+01 17 40 1.0E+00 14 125°C IS (A) RDS(ON) (mΩ) 5 2.4 10 11 25°C 125°C 1.0E-01 1.0E-02 25°C 1.0E-03 8 1.0E-04 1.0E-05 5 4 5 6 7 8 9 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) 3/7 4 VGS(Volts) Figure 2: Transfer Characteristics (Note E) VDS (Volts) Fig 1: On-Region Characteristics (Note E) RDS(ON) (mΩ) 3 0.0 0.2 0.4 0.6 0.8 1.0 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) www.freescale.net.cn AOT418L/AOB418L 100V N-Channel MOSFET TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 7000 10 Capacitance (pF) VGS (Volts) 6000 VDS=50V ID=20A 8 6 4 2 3000 2000 Coss Crss 0 0 10 20 30 40 50 60 Qg (nC) Figure 7: Gate-Charge Characteristics 0 70 1000.0 10µs 10µs RDS(ON) limited 4000 Power (W) 1ms DC 10ms 1.0 TJ(Max)=175°C TC=25°C 0.1 0.0 0.01 100 TJ(Max)=175°C TC=25°C 0.1 17 5 2 10 3000 2000 1000 1 10 VDS (Volts) 100 1000 0 1E-05 0.0001 0.001 0.01 0.1 1 0 10 Pulse Width (s) 18 Figure 10: Single Pulse Power Rating Junction-toCase (Note F) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) 1 40 60 80 VDS (Volts) Figure 8: Capacitance Characteristics 100µs 10.0 10 20 5000 100.0 ID (Amps) 4000 1000 0 ZθJC Normalized Transient Thermal Resistance Ciss 5000 D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 40 RθJC=0.45°C/W 0.1 PD 0.01 Single Pulse 0.001 0.000001 0.00001 0.0001 Ton 0.001 0.01 T 0.1 1 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) 4/7 www.freescale.net.cn AOT418L/AOB418L 100V N-Channel MOSFET TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 350 300 TA=25°C 100 Power Dissipation (W) IAR (A) Peak Avalanche Current 1000 TA=100°C TA=150°C TA=125°C 250 200 150 100 50 10 0 1 0 10 100 1000 Time in avalanche, tA (µs) Figure 12: Single Pulse Avalanche capability (Note C) 25 50 75 100 150 175 1000 120 TA=25°C 100 100 80 Power (W) Current rating ID(A) 125 TCASE (°C) Figure 13: Power De-rating (Note F) 60 40 17 5 2 10 10 20 0 0 25 50 75 100 125 150 175 ZθJA Normalized Transient Thermal Resistance 1 1 100 0 10000 Pulse Width (s) 18 Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H) TCASE (°C) Figure 14: Current De-rating (Note F) 10 1 0.01 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse RθJA=60°C/W 40 0.1 PD 0.01 0.001 0.01 Ton Single Pulse 0.1 1 10 T 100 1000 Pulse Width (s) Figure 16: Normalized Maximum Transient Thermal Impedance (Note H) 5/7 www.freescale.net.cn AOT418L/AOB418L 100V N-Channel MOSFET TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 35 160 25ºC Qrr 30 125ºC 20 80 10 25ºC 40 0 2 trr 20 5 10 15 20 25 0.5 25ºC 5 30 0 150 25ºC Qrr 100 40 50 35 45 125º 15 10 50 25ºC Irm 5 0 0 200 400 600 800 0 1000 di/dt (A/µs) Figure 19: Diode Reverse Recovery Charge and Peak Current vs. di/dt 6/7 15 20 0 25 30 2.5 Is=20A 2 35 25 20 10 40 30 125º 5 IS (A) Figure 18: Diode Reverse Recovery Time and Softness Factor vs. Conduction Current Irm (A) Qrr (nC) 200 125ºC 125ºC 30 trr (ns) Is=20A 1.5 1 S IS (A) Figure 17: Diode Reverse Recovery Charge and Peak Current vs. Conduction Current 250 25ºC 10 0 0 2.5 25 15 Irm 125ºC 30 40 25ºC 25 20 1.5 trr S 125ºC trr (ns) 200 120 3 di/dt=800A/µs Irm (A) Qrr (nC) di/dt=800A/µs S 50 240 1 125ºC 15 10 0.5 S 5 25ºC 0 0 200 400 600 800 0 1000 di/dt (A/µs) Figure 20: Diode Reverse Recovery Time and Softness Factor vs. di/dt www.freescale.net.cn AOT418L/AOB418L 100V N-Channel MOSFET Gate Charge Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - VDC DUT Qgs Qgd - Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds Vds DUT Vgs 90% + Vdd VDC Rg - 10% Vgs Vgs t d(on) tr t d(off) ton tf toff Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L 2 E AR= 1/2 LIAR Vds BVDSS Vds Id + Vdd Vgs Vgs VDC Rg - I AR Id DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vds - Isd Vgs Ig 7/7 Vgs Isd L + Vdd VDC - IF t rr dI/dt I RM Vdd Vds www.freescale.net.cn