AON6204 30V N-Channel MOSFET General Description The AON6204 uses trench MOSFET technology that isuniquely optimized to provide the most efficient high frequency switching performance.Power losses are minimized due to an extremely low combination of RDS(ON) and Crss .In addition,switching behavior is well controlled with a "Schottky style" soft recovery body diode. Features VDS 30V ID (at VGS=10V) 24A RDS(ON) (at VGS=10V) < 12mΩ RDS(ON) (at VGS = 4.5V) < 18mΩ D Top View 1 8 2 7 3 6 4 5 G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current G VGS TC=25°C Pulsed Drain Current C Continuous Drain Current TA=25°C V A 110 14 IDSM A 11 Avalanche Current C IAS, IAR 21 A Avalanche energy L=0.1mH C TC=25°C EAS, EAR 22 mJ Power Dissipation B Junction and Storage Temperature Range 1.9 Steady-State Steady-State RθJA RθJC W 1.2 TJ, TSTG Symbol t ≤ 10s W 13 PDSM TA=70°C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case 31 PD TC=100°C TA=25°C Power Dissipation A 1/6 ±20 19 IDM TA=70°C Units V 24 ID TC=100°C Maximum 30 -55 to 150 Typ 29 56 3.3 °C Max 35 67 4 Units °C/W °C/W °C/W www.freescale.net.cn AON6204 30V N-Channel MOSFET Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=250µA, VGS=0V IGSS Gate-Body leakage current VDS=0V, VGS= ±20V VGS(th) Gate Threshold Voltage VDS=VGS ID=250µA 1.4 ID(ON) On state drain current VGS=10V, VDS=5V 110 TJ=55°C 5 VGS=10V, ID=20A TJ=125°C VGS=4.5V, ID=15A gFS Forward Transconductance VDS=5V, ID=20A VSD Diode Forward Voltage IS=1A,VGS=0V IS Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Input Capacitance Ciss Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance Units V 1 Zero Gate Voltage Drain Current Static Drain-Source On-Resistance Max 30 VDS=30V, VGS=0V IDSS RDS(ON) Typ µA 100 nA 1.9 2.4 V 10 12 14.5 18 14.5 18 mΩ 1 V 30 A A 33 0.72 mΩ S 400 510 670 pF VGS=0V, VDS=15V, f=1MHz 150 220 310 pF 13 22 38 pF VGS=0V, VDS=0V, f=1MHz 0.8 1.6 2.4 Ω SWITCHING PARAMETERS Qg(10V) Total Gate Charge 6 8 10 nC Qg(4.5V) Total Gate Charge 2.6 3.5 4.0 nC 1.6 2 2.4 nC 0.8 1.4 2 nC VGS=10V, VDS=15V, ID=20A Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time IF=20A, dI/dt=500A/µs 8 11 14 Qrr Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs 13 17 21 VGS=10V, VDS=15V, RL=0.75Ω, RGEN=3Ω 4.3 ns 8 ns 15.8 ns 3.4 ns ns nC A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on RθJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse ratin g. G. The maximum current rating is limited by package. H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. 2/6 www.freescale.net.cn AON6204 30V N-Channel MOSFET TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 100 60 10V VDS=5V 80 7V 50 6V 5V 40 ID (A) ID(A) 4.5V 60 4V 30 40 20 3.5V 20 VGS=3V 10 0 125°C 25°C 0 0 1 2 3 4 5 0 1 VDS (Volts) Fig 1: On-Region Characteristics (Note E) 3 4 5 6 VGS(Volts) Figure 2: Transfer Characteristics (Note E) 20 Normalized On-Resistance 1.8 18 VGS=4.5V 16 RDS(ON) (mΩ ) 2 14 12 VGS=10V 10 VGS=10V ID=20A 1.6 1.4 17 VGS=4.5V 5 ID=15A 1.2 2 10 1 8 0 5 10 15 20 25 0.8 30 0 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 75 100 125 150 175 1.0E+02 1.0E+01 35 ID=20A 40 30 1.0E+00 25 1.0E-01 125°C 125°C IS (A) RDS(ON) (mΩ ) 50 0 Temperature (°C) 18 Figure 4: On-Resistance vs. Junction Temperature (Note E) 40 20 25°C 1.0E-02 1.0E-03 15 10 1.0E-04 25°C 1.0E-05 5 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) 3/6 25 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) www.freescale.net.cn AON6204 30V N-Channel MOSFET TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 800 10 VDS=15V ID=20A Ciss 600 Capacitance (pF) VGS (Volts) 8 6 4 400 Coss 200 2 Crss 0 0 0 2 4 6 Qg (nC) Figure 7: Gate-Charge Characteristics 0 8 15 20 25 VDS (Volts) Figure 8: Capacitance Characteristics 160 100.0 30 10.0 TJ(Max)=150°C TC=25°C 10µs RDS(ON) limited 100us 1ms 1.0 DC Power (W) ID (Amps) 10 200 1000.0 120 TJ(Max)=150°C TC=25°C 0.1 80 40 0.0 0 0.01 0.1 1 VDS (Volts) 10 100 0.0001 10 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toCase (Note F) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) Zθ JC Normalized Transient Thermal Resistance 5 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC RθJC=4°C/W 1 PD 0.1 Ton T Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) 4/6 www.freescale.net.cn AON6204 30V N-Channel MOSFET TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 100.0 IAR (A) Peak Avalanche Current 35 Power Dissipation (W) 30 TA=25°C TA=100°C TA=125°C TA=150°C 25 20 15 10 5 0 10.0 0 0.000001 0.00001 0.0001 0.001 Time in avalanche, tA (s) Figure 12: Single Pulse Avalanche capability (Note C) 25 50 75 125 150 10000 40 35 TA=25°C 1000 30 Power (W) Current rating ID(A) 100 TCASE (°C) Figure 13: Power De-rating (Note F) 25 20 15 17 5 2 10 100 10 10 5 0 1 0 25 50 75 100 125 150 0.00001 TCASE (°C) Figure 14: Current De-rating (Note F) Zθ JA Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA 1 0.001 0.1 10 1000 0 18 Pulse Width (s) Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H) In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 40 RθJA=67°C/W 0.1 PD 0.01 Ton Single Pulse T 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 16: Normalized Maximum Transient Thermal Impedance (Note H) 5/6 www.freescale.net.cn AON6204 30V N-Channel MOSFET Gate Charge Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC - DUT Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds Vds 90% + Vdd DUT Vgs VDC - Rg 10% Vgs Vgs t d(on) tr t d(off) t on tf toff Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L 2 E AR = 1/2 LIAR Vds BVDSS Vds Id + Vdd Vgs Vgs I AR VDC - Rg Id DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vds Isd Vgs Ig 6/6 Vgs L Isd + Vdd t rr dI/dt I RM Vdd VDC - IF Vds www.freescale.net.cn