AOT290L/AOB290L 100V N-Channel MOSFET General Description The AOT290L/AOB290L uses Trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance. Power losses are minimized due to an extremely low combination of RDS(ON) and Crss.In addition, switching behavior is well controlled with a soft recovery body diode.This device is ideal for boost converters and synchronous rectifiers for consumer, telecom, industrial power supplies and LED backlighting. Features VDS ID (at VGS=10V) 100V 140A RDS(ON) (at VGS=10V) < 3.5mΩ (< 3.2mΩ ∗) TO220 TO-263 2 PAK D D D S D G G G S S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage Gate-Source Voltage VGS TC=25°C Continuous Drain Current G Pulsed Drain Current C Avalanche energy L=0.1mH C TC=25°C Power Dissipation B TC=100°C Power Dissipation A TA=70°C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case * Surface mount package TO263 1/6 IAS, IAR 100 A EAS, EAR 500 mJ 500 Steady-State Steady-State W 250 2.1 RθJA RθJC W 1.3 TJ, TSTG Symbol t ≤ 10s A 15 PDSM Junction and Storage Temperature Range A 18 PD TA=25°C V 500 IDSM TA=70°C ±20 110 IDM TA=25°C Continuous Drain Current Avalanche Current C Units V 140 ID TC=100°C Maximum 100 -55 to 175 Typ 12 50 0.25 °C Max 15 60 0.3 Units °C/W °C/W °C/W www.freescale.net.cn AOT290L/AOB290L 100V N-Channel MOSFET Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=250µA, VGS=0V 100 Typ 1 Zero Gate Voltage Drain Current IGSS Gate-Body leakage current VGS(th) Gate Threshold Voltage VDS=VGS ID=250µA 2.9 ID(ON) On state drain current VGS=10V, VDS=5V 500 TJ=55°C 5 VDS=0V, VGS= ±20V VGS=10V, ID=20A TO220 TJ=125°C nA 3.5 4.1 V 2.7 3.5 4.4 5.7 3.2 A Static Drain-Source On-Resistance Forward Transconductance TO263 VDS=5V, ID=20A 2.5 gFS VSD Diode Forward Voltage IS=1A,VGS=0V 0.67 IS Maximum Body-Diode Continuous CurrentG Output Capacitance VGS=10V, ID=20A Crss Reverse Transfer Capacitance Rg Gate resistance VGS=0V, VDS=50V, f=1MHz 50 mΩ S 1 V 140 A 7180 9550 pF 2780 3700 pF 42 72 pF VGS=0V, VDS=0V, f=1MHz 1.7 VGS=10V, VDS=50V, ID=20A 33 SWITCHING PARAMETERS Qg(10V) Total Gate Charge µA 100 RDS(ON) DYNAMIC PARAMETERS Input Capacitance Ciss Units V VDS=100V, VGS=0V IDSS Coss Max 90 Ω 126 nC Qgs Gate Source Charge Qgd Gate Drain Charge 21 tD(on) Turn-On DelayTime 31 69 ns tr Turn-On Rise Time 24 53 ns tD(off) Turn-Off DelayTime 45 99 ns tf Turn-Off Fall Time 27 60 ns ns nC VGS=10V, VDS=50V, RL=2.5Ω, RGEN=3Ω nC nC trr Body Diode Reverse Recovery Time IF=20A, dI/dt=500A/µs 65 91 Qrr Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs 460 644 A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design, and the maximum temperature of 175°C may be used if the P CB allows it. B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=175°C. The SOA curve provides a single pulse ratin g. G. The maximum current limited by package is 120A. H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. 2/6 www.freescale.net.cn AOT290L/AOB290L 100V N-Channel MOSFET TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 100 100 10V 8V 6.5V 80 VDS=5V 80 6V 60 ID(A) ID (A) 60 5.5V 40 125°C 40 25°C 20 20 Vgs=5V 0 0 0 1 2 3 4 3 5 8 6 7 Normalized On-Resistance 2 6 4 2 VGS=10V 1.8 VGS=10V ID=20A 1.6 1.4 1.2 1 0.8 0 0 5 0 10 15 20 25 30 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 25 50 75 100 125 150 175 200 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature (Note E) 10 1.0E+02 ID=20A 1.0E+01 8 40 6 125°C 4 IS (A) 1.0E+00 RDS(ON) (mΩ ) 5 VGS(Volts) Figure 2: Transfer Characteristics (Note E) VDS (Volts) Fig 1: On-Region Characteristics (Note E) RDS(ON) (mΩ ) 4 125°C 1.0E-01 25°C 1.0E-02 1.0E-03 25°C 2 1.0E-04 0 1.0E-05 5 3/6 6 7 8 9 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) www.freescale.net.cn AOT290L/AOB290L 100V N-Channel MOSFET TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10000 10 VDS=50V ID=20A 6 4 2 6000 4000 Coss 2000 0 Crss 0 0 20 40 60 80 Qg (nC) Figure 7: Gate-Charge Characteristics 100 0 10µs 10µs 100µs RDS(ON) limited 40 60 80 VDS (Volts) Figure 8: Capacitance Characteristics 10.0 4000 1ms DC Power (W) 100.0 20 100 5000 1000.0 ID (Amps) Ciss 8000 Capacitance (pF) VGS (Volts) 8 10ms 1.0 TJ(Max)=175°C TC=25°C 0.1 TJ(Max)=175°C TC=25°C 17 5 2 10 3000 2000 1000 0.0 0 0.01 0.1 1 10 VDS (Volts) 100 1000 0.0001 0.001 0.01 0.1 1 0 10 Pulse Width (s) 18 Figure 10: Single Pulse Power Rating Junction-toCase (Note F) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) Zθ JC Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC 1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 40 RθJC=0.3°C/W PD 0.1 Ton T Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) 4/6 www.freescale.net.cn AOT290L/AOB290L 100V N-Channel MOSFET TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 600 TA=25°C Power Dissipation (W) IAR (A) Peak Avalanche Current 1000 TA=100°C 100 TA=150°C 500 400 300 200 100 TA=125°C 10 0 1 10 100 1000 Time in avalanche, tA (µ µs) Figure 12: Single Pulse Avalanche capability (Note C) 0 150 25 50 75 100 125 150 TCASE (°C) Figure 13: Power De-rating (Note F) 10000 TA=25°C 120 1000 Power (W) Current rating ID(A) 175 90 60 100 10 30 0 0 25 50 75 100 125 150 TCASE (°C) Figure 14: Current De-rating (Note F) 1 0.001 175 0.1 10 1000 Pulse Width (s) Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H) Zθ JA Normalized Transient Thermal Resistance 10 1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA 40 RθJA=60°C/W 0.1 0.01 PD 0.001 Ton Single Pulse T 0.0001 0.0001 0.001 0.01 0.1 1 10 100 1000 10000 Pulse Width (s) Figure 16: Normalized Maximum Transient Thermal Impedance (Note H) 5/6 www.freescale.net.cn AOT290L/AOB290L 100V N-Channel MOSFET Gate Charge Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC - DUT Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds Vds 90% + Vdd DUT Vgs VDC - Rg 10% Vgs Vgs t d(on) tr t d(off) t on tf toff Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L 2 E AR = 1/2 LIAR Vds BVDSS Vds Id + Vdd Vgs Vgs I AR VDC - Rg Id DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vds Isd Vgs Ig 6/6 Vgs L Isd + Vdd t rr dI/dt I RM Vdd VDC - IF Vds www.freescale.net.cn