AOT5N100/AOTF5N100 1000V,4A N-Channel MOSFET General Description The AOT5N100 & AOTF5N100 are fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability this parts can be adopted quickly into new and existing offline power supply designs. Features VDS ID (at VGS=10V) 1100@150℃ 4A RDS(ON) (at VGS=10V) < 4.2Ω D G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter AOT5N100 AOTF5N100 Symbol Drain-Source Voltage 1000 VDS Gate-Source Voltage Continuous Drain Current VGS TC=25°C TC=100°C ID V 4 4* 2.5 2.5* A Pulsed Drain Current C IDM Avalanche Current C IAR 2.8 A Repetitive avalanche energy C EAR 117 mJ Single pulsed avalanche energy G Peak diode recovery dv/dt TC=25°C Power Dissipation B Derate above 25oC Junction and Storage Temperature Range Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds Thermal Characteristics Parameter Maximum Junction-to-Ambient A,D EAS dv/dt 235 5 mJ V/ns W PD 15 195 42 1.6 0.3 TJ, TSTG -55 to 150 W/ oC °C 300 °C TL Symbol RθJA RθCS Maximum Case-to-sink A Maximum Junction-to-Case RθJC * Drain current limited by maximum junction temperature. 1/6 ±30 Units V AOT5N100 65 AOTF5N100 65 Units °C/W 0.5 0.64 -3 °C/W °C/W www.freescale.net.cn AOT5N100/AOTF5N100 1000V,4A N-Channel MOSFET Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min ID=250µA, VGS=0V, TJ=25°C 1000 Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage BVDSS /∆TJ Zero Gate Voltage Drain Current IDSS Zero Gate Voltage Drain Current ID=250µA, VGS=0V, TJ=150°C 1100 V ID=250µA, VGS=0V 1.04 V/ oC VDS=1000V, VGS=0V 1 VDS=800V, TJ=125°C 10 IGSS Gate-Body leakage current VDS=0V, VGS=±30V VGS(th) Gate Threshold Voltage VDS=5V, ID=250µA RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=2.5A gFS Forward Transconductance VDS=40V, ID=2.5A VSD Diode Forward Voltage IS=1A,VGS=0V IS ISM 3.9 4.5 nΑ V 3.5 4.2 Ω 5 S 1 V Maximum Body-Diode Continuous Current 4 A Maximum Body-Diode Pulsed Current 15 A DYNAMIC PARAMETERS Ciss Input Capacitance Coss ±100 3.3 µA Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance VGS=0V, VDS=25V, f=1MHz VGS=0V, VDS=0V, f=1MHz SWITCHING PARAMETERS Qg Total Gate Charge Qgs Gate Source Charge Qgd Gate Drain Charge 0.73 750 950 1150 pF 40 62 85 pF 3.5 6 9 pF 2 4.3 6.5 Ω 19 23 nC 15 VGS=10V, VDS=800V, ID=5A 4.6 nC 6.5 nC 27 ns 40 ns 50 ns tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf trr Turn-Off Fall Time IF=5A,dI/dt=100A/µs,VDS=100V 350 450 550 Qrr Body Diode Reverse Recovery Charge IF=5A,dI/dt=100A/µs,VDS=100V 4.2 5.5 6.8 Body Diode Reverse Recovery Time VGS=10V, VDS=500V, ID=5A, RG=25Ω 33 ns ns µC A. The value of R θJA is measured with the device in a still air environment with T A =25°C. B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C, Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The R θJA is the sum of the thermal impedance from junction to case R θJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating. G. L=60mH, IAS=2.8A, VDD=150V, RG=25Ω, Starting TJ=25°C 2/6 www.freescale.net.cn AOT5N100/AOTF5N100 1000V,4A N-Channel MOSFET TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 100 7.5 VDS=40V 10V 6.0 -55°C 10 4.5 ID(A) ID (A) 6V 3.0 125°C 5.5V 1 1.5 25°C VGS=5V 0.0 0.1 0 5 10 15 20 25 30 2 4 6 8 VGS(Volts) Figure 2: Transfer Characteristics VDS (Volts) Fig 1: On-Region Characteristics 3 Normalized On-Resistance 10.0 8.0 RDS(ON) (Ω Ω) 10 6.0 VGS=10V 4.0 2.0 0.0 2.5 VGS=10V ID=2.5A 2 1.5 1 0.5 0 0 2 4 6 8 10 12 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage -100 -50 0 50 100 150 200 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 1.2 1E+02 40 1E+00 IS (A) BVDSS (Normalized) 1E+01 1.1 1 125°C 1E-01 25°C 1E-02 0.9 1E-03 1E-04 0.8 -100 3/6 -50 0 50 100 150 200 TJ (°C) Figure 5:Break Down vs. Junction Temparature 0.0 0.2 0.4 0.6 0.8 1.0 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) www.freescale.net.cn AOT5N100/AOTF5N100 1000V,4A N-Channel MOSFET TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10000 15 VDS=800V ID=5A Ciss 1000 Capacitance (pF) VGS (Volts) 12 9 6 Coss 100 Crss 10 3 0 1 0 5 10 15 20 25 Qg (nC) Figure 7: Gate-Charge Characteristics 30 0.1 100 10 VDS (Volts) Figure 8: Capacitance Characteristics 100 100 10µs RDS(ON) limited 10 100µs 1 ID (Amps) 10 ID (Amps) 1 1ms DC 10ms 0.1 10µs RDS(ON) limited 100µs 1 1ms DC 0.1 TJ(Max)=150°C TC=25°C 10ms 0.1s 1s TJ(Max)=150°C TC=25°C 0.01 0.01 1 10 100 1000 10000 1 10 100 1000 VDS (Volts) VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area for AOT5N100 (Note F) Figure 10: Maximum Forward Biased Safe Operating Area for AOTF5N100 (Note F) 10000 Current rating ID(A) 5 4 3 2 1 0 0 4/6 25 50 75 100 125 TCASE (°C) Figure 11: Current De-rating (Note B) 150 www.freescale.net.cn AOT5N100/AOTF5N100 1000V,4A N-Channel MOSFET TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS Zθ JC Normalized Transient Thermal Resistance 10 1 D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC RθJC=0.64°C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 PD Single Pulse 0.01 Ton T 0.001 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 12: Normalized Maximum Transient Thermal Impedance for AOT5N100 (Note F) Zθ JC Normalized Transient Thermal Resistance 10 1 D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC RθJC=3°C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 PD 0.01 Ton Single Pulse T 0.001 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 13: Normalized Maximum Transient Thermal Impedance for AOTF5N100 (Note F) 5/6 www.freescale.net.cn AOT5N100/AOTF5N100 1000V,4A N-Channel MOSFET Gate Charge Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC DUT - Vgs Ig Charge Res istive Switching Test Circuit & Waveforms RL Vds Vds DUT Vgs + VDC 90% Vdd - Rg 10% Vgs Vgs t d(on) tr t d(off) t on tf t off Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L EAR= 1/2 LI Vds 2 AR BVDSS Vds Id + Vdd Vgs Vgs I AR VDC - Rg Id DUT Vgs Vgs Diode Recovery Tes t Circuit & Waveforms Qrr = - Idt Vds + DUT Vgs Vds - Isd Vgs Ig 6/6 L Isd + VDC - IF trr dI/dt IRM Vdd Vdd Vds www.freescale.net.cn