AOTF18N65 650V,18A N-Channel MOSFET General Description The AOTF18N65 is fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability this part can be adopted quickly into new and existing offline power supply designs. Features VDS ID (at VGS=10V) 750V@150℃ 18A RDS(ON) (at VGS=10V) < 0.39Ω D G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current VGS TC=25°C TC=100°C ID Units V ±30 V 18* 12* A Pulsed Drain Current C IDM Avalanche Current C IAR 6.3 A Repetitive avalanche energy C EAR 595 mJ 1190 5 50 mJ V/ns W 0.4 -55 to 150 W/ oC °C 300 °C AOTF18N65 65 2.5 Units °C/W °C/W Single pulsed avalanche energy G EAS Peak diode recovery dv/dt dv/dt TC=25°C PD Power Dissipation B Derate above 25oC Junction and Storage Temperature Range TJ, TSTG Maximum lead temperature for soldering TL purpose, 1/8" from case for 5 seconds Thermal Characteristics Symbol Parameter Maximum Junction-to-Ambient A,D RθJA Maximum Junction-to-Case RθJC * Drain current limited by maximum junction temperature. 1/5 AOTF18N65 650 80 www.freescale.net.cn AOTF18N65 650V,18A N-Channel MOSFET Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min ID=250µA, VGS=0V, TJ=25°C 650 Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage BVDSS /∆TJ Zero Gate Voltage Drain Current IDSS Zero Gate Voltage Drain Current IGSS Gate-Body leakage current VDS=0V, VGS=±30V VGS(th) Gate Threshold Voltage VDS=5V, ID=250µA ID=250µA, VGS=0V, TJ=150°C 750 ID=250µA, VGS=0V 0.7 V V/ oC VDS=650V, VGS=0V 1 VDS=520V, TJ=125°C 10 ±100 2.9 µA 3.5 4.5 nΑ V 0.39 Ω 1 V RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=9A 0.32 gFS Forward Transconductance VDS=40V, ID=9A 20 VSD Diode Forward Voltage IS=1A,VGS=0V IS Maximum Body-Diode Continuous Current* 18 A ISM Maximum Body-Diode Pulsed Current 80 A DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance VGS=0V, VDS=25V, f=1MHz VGS=0V, VDS=0V, f=1MHz SWITCHING PARAMETERS Qg Total Gate Charge VGS=10V, VDS=520V, ID=18A Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf trr Turn-Off Fall Time Qrr Body Diode Reverse Recovery Charge IF=18A,dI/dt=100A/µs,VDS=100V Body Diode Reverse Recovery Time 0.69 S 2270 3027 3785 pF 170 271 370 pF 12 22 32 pF 0.7 1.4 2.1 Ω 44 56 68 nC 9 12.4 15 nC 9 19.6 30 nC VGS=10V, VDS=325V, ID=18A, RG=25Ω 54 ns 83 ns 149 ns 71 IF=18A,dI/dt=100A/µs,VDS=100V ns 520 655 790 8 10 12 ns µC A. The value of R θJA is measured with the device in a still air environment with T A =25°C. B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C, Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The R θJA is the sum of the thermal impedance from junction to case R θJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating. G. L=60mH, IAS=6.3A, VDD=150V, RG=25Ω, Starting TJ=25°C 2/5 www.freescale.net.cn AOTF18N65 650V,18A N-Channel MOSFET TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 100 40 -55°C VDS=40V 10V 30 6V ID(A) ID (A) 10 20 125°C 5.5V 1 10 VGS=5V 25°C 0 0.1 0 5 10 15 20 25 30 0 VDS (Volts) Fig 1: On-Region Characteristics 0.6 4 6 8 VGS(Volts) Figure 2: Transfer Characteristics 10 Normalized On-Resistance 3 0.5 RDS(ON) (Ω Ω) 2 VGS=10V 0.4 0.3 VGS=10V ID=9A 2.5 2 1.5 1 0.5 0 0.2 0 10 20 30 -100 40 -50 0 50 100 150 200 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 1.2 1.0E+02 40 1.0E+00 IS (A) BVDSS (Normalized) 1.0E+01 1.1 1 125°C 1.0E-01 1.0E-02 25°C 0.9 1.0E-03 0.8 1.0E-04 -100 -50 0 50 100 150 200 TJ (°C) Figure 5:Break Down vs. Junction Temparature 3/5 0.0 0.2 0.4 0.6 0.8 1.0 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) www.freescale.net.cn AOTF18N65 650V,18A N-Channel MOSFET TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 15 10000 Ciss VDS=520V ID=18A Capacitance (pF) VGS (Volts) 12 9 6 1000 Coss Crss 100 3 0 10 0 20 40 60 80 Qg (nC) Figure 7: Gate-Charge Characteristics 100 0.1 100 100 20 15 10 5 10µs RDS(ON) limited 10 ID (Amps) Current rating ID(A) 1 10 VDS (Volts) Figure 8: Capacitance Characteristics 100µs 1ms 1 DC 10ms 0.1s 0.1 1s TJ(Max)=150°C TC=25°C 0 0.01 0 25 50 75 100 125 150 TCASE (°C) Figure 9: Current De-rating (Note B) 1 10 100 VDS (Volts) Figure 10: Maximum Forward Biased Safe Operating Area for AOTF18N65 (Note F) 1000 Zθ JC Normalized Transient Thermal Resistance 10 1 D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC RθJC=2.5°C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 PD 0.01 Ton T Single Pulse 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance for AOTF18N65 (Note F) 4/5 www.freescale.net.cn AOTF18N65 650V,18A N-Channel MOSFET Gate Charge Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC DUT - Vgs Ig Charge Res istive Switching Test Circuit & Waveforms RL Vds Vds DUT Vgs + VDC 90% Vdd - Rg 10% Vgs Vgs t d(on) tr t d(off) t on tf t off Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L EAR= 1/2 LI Vds 2 AR BVDSS Vds Id + Vdd Vgs Vgs I AR VDC - Rg Id DUT Vgs Vgs Diode Recovery Tes t Circuit & Waveforms Qrr = - Idt Vds + DUT Vgs Vds - Isd Vgs Ig 5/5 L Isd + VDC - IF trr dI/dt IRM Vdd Vdd Vds www.freescale.net.cn