AON2800 20V Dual N-Channel MOSFET General Description The AON2800 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON) . This device is ideal for load switch and battery protection applications. Features VDS 20V ID (at VGS=4.5V) 4.5A RDS(ON) (at VGS=4.5V) < 47mΩ RDS(ON) (at VGS=2.5V) < 65mΩ DFN 2x2 Package S1 G1 D2 D1 D2 Pin 1 G1 D1 G2 G2 S2 Pin 1 Top S1 Bottom Absolute Maximum Ratings TA=25°C unless otherwise noted Symbol Parameter Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current VGS TA=25°C Pulsed Drain Current C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Ambient B Maximum Junction-to-Ambient B 1/5 Steady-State t ≤ 10s Steady-State V A 1.5 W 0.95 TJ, TSTG Symbol t ≤ 10s ±8 24 PD TA=70°C Units V 3.8 IDM TA=25°C Power Dissipation B Maximum 20 4.5 ID TA=70°C S2 RθJA RθJA -55 to 150 Typ 35 65 120 175 °C Max 45 85 155 235 Units °C/W °C/W °C/W °C/W www.freescale.net.cn AON2800 20V Dual N-Channel MOSFET Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS Drain-Source Breakdown Voltage BVDSS Conditions Min ID=250µA, VGS=0V IGSS Gate-Body leakage current VDS=0V, VGS= ±8V VGS(th) Gate Threshold Voltage VDS=VGS ID=250µA 0.4 ID(ON) On state drain current VGS=4.5V, VDS=5V 24 TJ=55°C 5 20 µA 1.2 V 37 47 55 70 VGS=2.5V, ID=3A 47 65 mΩ 1 V 1.5 A Static Drain-Source On-Resistance TJ=125°C A gFS Forward Transconductance VDS=5V, ID=4A 14 VSD Diode Forward Voltage IS=1A,VGS=0V 0.7 IS Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Ciss Input Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance Gate Source Charge Qgd tD(on) mΩ S 285 360 435 pF VGS=0V, VDS=10V, f=1MHz 45 65 85 pF 30 50 70 pF VGS=0V, VDS=0V, f=1MHz 1.7 3.5 5.3 Ω 4.15 6 nC SWITCHING PARAMETERS Qg(4.5V) Total Gate Charge Qgs µA 0.8 VGS=4.5V, ID=4A Output Capacitance Units V 1 Zero Gate Voltage Drain Current Coss Max 20 VDS=20V, VGS=0V IDSS RDS(ON) Typ VGS=4.5V, VDS=10V, ID=4A 0.55 nC Gate Drain Charge 1.15 nC Turn-On DelayTime 9.5 ns tr Turn-On Rise Time tD(off) Turn-Off DelayTime 43 ns 26 ns tf Turn-Off Fall Time 39 ns trr Body Diode Reverse Recovery Time Qrr IF=4A, dI/dt=100A/µs 11 Body Diode Reverse Recovery Charge IF=4A, dI/dt=100A/µs 3 ns nC VGS=4.5V, VDS=10V, RL=2.5Ω, RGEN=3Ω A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design, and the maximum temperature of 150°C may be used if the PCB allows it to. B. The value of R θJA is measured with the device mounted on a minimum pad board with 2oz. Copper, in a still air environment with T A =25°C. The Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design, and the maximum temperature of 150°C may be used if the PCB allows it to. C. The R θJA is the sum of the thermal impedence from junction to case R θJC and case to ambient. D. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA curve provides a single pulse rating. 2/5 www.freescale.net.cn AON2800 20V Dual N-Channel MOSFET TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 15 15 4.5V 2.5V VDS=5V 3V 12 12 3.5V 9 ID(A) ID (A) 9 2V 125°C 6 6 3 3 25°C VGS=1.5V 0 0 0 1 2 3 4 0 5 70 2 3 4 Normalized On-Resistance 1.8 60 RDS(ON) (mΩ Ω) 1 VGS(Volts) Figure 2: Transfer Characteristics (Note D) VDS (Volts) Fig 1: On-Region Characteristics (Note D) VGS=2.5V 50 40 VGS=4.5V 30 20 VGS=4.5V ID=4A 1.6 1.4 17 5 2 VGS=2.5V10 1.2 ID=3A 1 0.8 0 2 4 6 8 10 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note D) 0 25 50 75 100 125 150 175 0 Temperature (°C) Figure 4: On-Resistance vs. Junction 18Temperature (Note D) 100 1.0E+02 90 1.0E+01 80 1.0E+00 70 1.0E-01 40 125°C IS (A) RDS(ON) (mΩ Ω) ID=4A 60 1.0E-02 50 1.0E-03 125°C 25°C 25°C 40 1.0E-04 30 1.0E-05 0 3/5 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note D) 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics (Note D) www.freescale.net.cn AON2800 20V Dual N-Channel MOSFET TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 4.5 600 VDS=10V ID=4A 4 500 Capacitance (pF) 3.5 VGS (Volts) 3 2.5 2 1.5 Ciss 400 300 200 Coss 1 100 0.5 Crss 0 0 0 1 2 g (nC) 3 4 Q Figure 7: Gate-Charge Characteristics 0 5 100.0 5 10 15 VDS (Volts) Figure 8: Capacitance Characteristics 20 10000 TA=25°C 10µs RDS(ON) limited 1000 100µs 1.0 Power (W) ID (Amps) 10.0 1ms 10ms 0.1 10s DC TJ(Max)=150°C TA=25°C 100 10 0.0 1 0.01 0.1 1 VDS (Volts) 10 100 0.00001 0.1 10 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 0.001 Zθ JA Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA 1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse RθJA=85°C/W 0.1 PD 0.01 Single Pulse Ton T 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note E) 4/5 www.freescale.net.cn AON2800 20V Dual N-Channel MOSFET Gate Charge Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC DUT - Vgs Ig Charge R es istiv e S w itch ing T e st C ircu it & W a ve fo rm s RL V ds Vds DUT Vgs 90 % + Vdd VDC - Rg 1 0% Vgs V gs t d (o n ) tr t d (o ff) to n tf t o ff D iode R ecovery T est C ircuit & W aveform s Q rr = - V ds + Idt DUT V gs V ds - Isd V gs Ig 5/5 L Isd + VD C - IF t rr dI/dt I RM V dd V dd V ds www.freescale.net.cn