SHENZHENFREESCALE AON2800

AON2800
20V Dual N-Channel MOSFET
General Description
The AON2800 combines advanced trench MOSFET technology with a low resistance package to provide
extremely low RDS(ON) . This device is ideal for load switch and battery protection applications.
Features
VDS
20V
ID (at VGS=4.5V)
4.5A
RDS(ON) (at VGS=4.5V)
< 47mΩ
RDS(ON) (at VGS=2.5V)
< 65mΩ
DFN 2x2 Package
S1
G1
D2
D1
D2
Pin 1
G1
D1
G2
G2
S2
Pin 1
Top
S1
Bottom
Absolute Maximum Ratings TA=25°C unless otherwise noted
Symbol
Parameter
Drain-Source Voltage
VDS
Gate-Source Voltage
Continuous Drain
Current
VGS
TA=25°C
Pulsed Drain Current C
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient B
Maximum Junction-to-Ambient B
1/5
Steady-State
t ≤ 10s
Steady-State
V
A
1.5
W
0.95
TJ, TSTG
Symbol
t ≤ 10s
±8
24
PD
TA=70°C
Units
V
3.8
IDM
TA=25°C
Power Dissipation B
Maximum
20
4.5
ID
TA=70°C
S2
RθJA
RθJA
-55 to 150
Typ
35
65
120
175
°C
Max
45
85
155
235
Units
°C/W
°C/W
°C/W
°C/W
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AON2800
20V Dual N-Channel MOSFET
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
Drain-Source Breakdown Voltage
BVDSS
Conditions
Min
ID=250µA, VGS=0V
IGSS
Gate-Body leakage current
VDS=0V, VGS= ±8V
VGS(th)
Gate Threshold Voltage
VDS=VGS ID=250µA
0.4
ID(ON)
On state drain current
VGS=4.5V, VDS=5V
24
TJ=55°C
5
20
µA
1.2
V
37
47
55
70
VGS=2.5V, ID=3A
47
65
mΩ
1
V
1.5
A
Static Drain-Source On-Resistance
TJ=125°C
A
gFS
Forward Transconductance
VDS=5V, ID=4A
14
VSD
Diode Forward Voltage
IS=1A,VGS=0V
0.7
IS
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
Gate Source Charge
Qgd
tD(on)
mΩ
S
285
360
435
pF
VGS=0V, VDS=10V, f=1MHz
45
65
85
pF
30
50
70
pF
VGS=0V, VDS=0V, f=1MHz
1.7
3.5
5.3
Ω
4.15
6
nC
SWITCHING PARAMETERS
Qg(4.5V) Total Gate Charge
Qgs
µA
0.8
VGS=4.5V, ID=4A
Output Capacitance
Units
V
1
Zero Gate Voltage Drain Current
Coss
Max
20
VDS=20V, VGS=0V
IDSS
RDS(ON)
Typ
VGS=4.5V, VDS=10V, ID=4A
0.55
nC
Gate Drain Charge
1.15
nC
Turn-On DelayTime
9.5
ns
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
43
ns
26
ns
tf
Turn-Off Fall Time
39
ns
trr
Body Diode Reverse Recovery Time
Qrr
IF=4A, dI/dt=100A/µs
11
Body Diode Reverse Recovery Charge IF=4A, dI/dt=100A/µs
3
ns
nC
VGS=4.5V, VDS=10V, RL=2.5Ω,
RGEN=3Ω
A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The
Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends
on the user's specific board design, and the maximum temperature of 150°C may be used if the PCB allows it to.
B. The value of R θJA is measured with the device mounted on a minimum pad board with 2oz. Copper, in a still air environment with T A =25°C.
The Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application
depends on the user's specific board design, and the maximum temperature of 150°C may be used if the PCB allows it to.
C. The R θJA is the sum of the thermal impedence from junction to case R θJC and case to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA
curve provides a single pulse rating.
2/5
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AON2800
20V Dual N-Channel MOSFET
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
15
15
4.5V
2.5V
VDS=5V
3V
12
12
3.5V
9
ID(A)
ID (A)
9
2V
125°C
6
6
3
3
25°C
VGS=1.5V
0
0
0
1
2
3
4
0
5
70
2
3
4
Normalized On-Resistance
1.8
60
RDS(ON) (mΩ
Ω)
1
VGS(Volts)
Figure 2: Transfer Characteristics (Note D)
VDS (Volts)
Fig 1: On-Region Characteristics (Note D)
VGS=2.5V
50
40
VGS=4.5V
30
20
VGS=4.5V
ID=4A
1.6
1.4
17
5
2
VGS=2.5V10
1.2
ID=3A
1
0.8
0
2
4
6
8
10
ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note D)
0
25
50
75
100
125
150
175
0
Temperature (°C)
Figure 4: On-Resistance vs. Junction
18Temperature
(Note D)
100
1.0E+02
90
1.0E+01
80
1.0E+00
70
1.0E-01
40
125°C
IS (A)
RDS(ON) (mΩ
Ω)
ID=4A
60
1.0E-02
50
1.0E-03
125°C
25°C
25°C
40
1.0E-04
30
1.0E-05
0
3/5
2
4
6
8
10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note D)
0.0
0.2
0.4
0.6
0.8
1.0
1.2
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note D)
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AON2800
20V Dual N-Channel MOSFET
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
4.5
600
VDS=10V
ID=4A
4
500
Capacitance (pF)
3.5
VGS (Volts)
3
2.5
2
1.5
Ciss
400
300
200
Coss
1
100
0.5
Crss
0
0
0
1
2 g (nC)
3
4
Q
Figure 7: Gate-Charge Characteristics
0
5
100.0
5
10
15
VDS (Volts)
Figure 8: Capacitance Characteristics
20
10000
TA=25°C
10µs
RDS(ON)
limited
1000
100µs
1.0
Power (W)
ID (Amps)
10.0
1ms
10ms
0.1
10s
DC
TJ(Max)=150°C
TA=25°C
100
10
0.0
1
0.01
0.1
1
VDS (Volts)
10
100
0.00001
0.1
10
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
0.001
Zθ JA Normalized Transient
Thermal Resistance
10
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
RθJA=85°C/W
0.1
PD
0.01
Single Pulse
Ton
T
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note E)
4/5
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AON2800
20V Dual N-Channel MOSFET
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
+ Vds
VDC
-
Qgs
Qgd
VDC
DUT
-
Vgs
Ig
Charge
R es istiv e S w itch ing T e st C ircu it & W a ve fo rm s
RL
V ds
Vds
DUT
Vgs
90 %
+
Vdd
VDC
-
Rg
1 0%
Vgs
V gs
t d (o n )
tr
t d (o ff)
to n
tf
t o ff
D iode R ecovery T est C ircuit & W aveform s
Q rr = -
V ds +
Idt
DUT
V gs
V ds -
Isd
V gs
Ig
5/5
L
Isd
+
VD C
-
IF
t rr
dI/dt
I RM
V dd
V dd
V ds
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