AON2801 Dual P-Channel Enhancement Mode Field Effect Transistor General Description The AON2801/L uses advanced trench technology to provide excellent RDS(ON) , low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications. AON2801 and AON2801L are electrically identical. -RoHS Compliant -Halogen Free* Features VDS (V) = -20V ID = -3A (VGS = -4.5V) RDS(ON) < 120mΩ (VGS = -4.5V) RDS(ON) < 160mΩ (VGS = -2.5V) RDS(ON) < 200mΩ (VGS = -1.8V) DFN 2x2 Package S1 G1 D2 G2 G1 D1 Top G2 S2 S1 Symbol VDS Gate-Source Voltage VGS TA=25°C Continuous Drain CurrentA C TA=25°C A Units V ±8 V ID -2.3 IDM -15 Junction and Storage Temperature Range W 0.95 TJ, TSTG -55 to 150 Symbol t ≤ 10s Steady-State t ≤ 10s Steady-State A 1.5 PDSM TA=70°C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Ambient B Maximum Junction-to-Ambient B Maximum -20 -3 TA=70°C Pulsed Drain Current 1/5 S2 Bottom Parameter Drain-Source Voltage Power Dissipation D2 D1 RθJA RθJA Typ 35 65 120 175 °C Max 45 85 155 235 Units °C/W °C/W °C/W °C/W www.freescale.net.cn AON2801 Dual P-Channel Enhancement Mode Field Effect Transistor Electrical Characteristics (TJ=25°C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=-250µA, VGS=0V -20 -1 Zero Gate Voltage Drain Current IGSS Gate-Body leakage current VDS=0V, VGS=±8V VGS(th) Gate Threshold Voltage VDS=VGS ID=-250µA -0.3 ID(ON) On state drain current VGS=-4.5V, VDS=-5V -15 TJ=55°C VGS=-4.5V, ID=-3A VGS=-1.8V, ID=-1.5A 160 200 mΩ Diode Forward Voltage IS=-1A,VGS=0V DYNAMIC PARAMETERS Ciss Input Capacitance VGS=0V, VDS=0V, f=1MHz tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf trr Turn-Off Fall Time Qrr VGS=-4.5V, VDS=-10V, RL=1.5Ω, RGEN=3Ω IF=-3A, dI/dt=100A/µs Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF=-3A, dI/dt=100A/µs S -0.76 V -1 A 700 pF 90 pF 63 pF 9.5 Ω 5 VGS=-4.5V, VDS=-10V, ID=-3A mΩ 6 540 VGS=0V, VDS=-10V, f=1MHz SWITCHING PARAMETERS Qg Total Gate Charge Gate Drain Charge A mΩ Maximum Body-Diode Continuous Current Gate Source Charge V 160 IS Qgs -1 128 VSD Qgd nA VGS=-2.5V, ID=-2.6A VDS=-5V, ID=-3A Gate resistance ±100 120 Forward Transconductance Rg -0.55 µA 170 gFS Reverse Transfer Capacitance -5 100 Static Drain-Source On-Resistance Output Capacitance Units 135 TJ=125°C RDS(ON) Crss Max V VDS=-20V, VGS=0V IDSS Coss Typ 6.5 nC 1.2 nC 1 nC 5 ns 40 ns 28.5 ns 46 ns 21 9.1 28 ns nC A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The -15value in any given application depends Power dissipation P DSM is based on R θJA and the maximum allowed junction temperature of 150°C. The on the user's specific board design, and the maximum temperature of 150°C may be used if the PCB allows it to. B. The value of R θJA is measured with the device mounted on a minimum pad board with 2oz. Copper, in a still air environment with T A =25°C. The Power dissipation P DSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design, and the maximum temperature of 150°C may be used if the PCB allows it to. C. The R θJA is the sum of the thermal impedence from junction to case R θJC and case to ambient. D. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA curve provides a single pulse rating. *This device is guaranteed green after data code 7111 (Oct 15 2007). Rev 2: Sep 2008 2/5 www.freescale.net.cn AON2801 Dual P-Channel Enhancement Mode Field Effect Transistor TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 15 15 -3.0V -4.5V VDS=-5V 12 12 -2.5V 25°C -ID(A) -ID (A) 9 -2.0V 6 9 125°C 6 VGS=-1.5V 3 3 0 0 0 1 2 3 4 0 1 -VDS (Volts) Figure 1: On-Region Characteristics 3 4 1.5 Normalized On-Resistance 280 240 RDS(ON) (mΩ ) 2 -VGS(Volts) Figure 2: Transfer Characteristics VGS=-1.8V 200 VGS=-2.5V 160 120 VGS=-4.5V 80 VGS=-1.8V ID=-1.5A VGS=-2.5V ID=-2.6A 1.3 VGS=-4.5V ID=-3A 1.1 0.9 0.7 0 2 4 6 8 10 -50 -ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage -15 320 -25 0 25 50 75 100 125 150 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature (Note E) 1E+01 ID=-3A 280 1E+00 240 1E-01 -IS (A) RDS(ON) (mΩ ) 12 200 125°C 160 120 1E-02 25°C 1E-03 1E-04 25°C 80 1E-05 0 2 4 6 8 -VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 3/5 125°C 0.0 0.2 0.4 0.6 0.8 1.0 1.2 -VSD (Volts) Figure 6: Body-Diode Characteristics www.freescale.net.cn AON2801 Dual P-Channel Enhancement Mode Field Effect Transistor TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 5 800 VDS=-10V ID=-3A 700 3 2 Ciss 600 Capacitance (pF) -VGS (Volts) 4 500 400 300 Crss Coss 200 1 100 0 0 0 1 2 3 4 5 6 0 Qg (nC) Figure 7: Gate-Charge Characteristics 5 10 15 -VDS (Volts) Figure 8: Capacitance Characteristics 10000 100.00 TJ(Max)=150°C TA=25°C TJ(Max)=150°C TA=25°C 10µs 10.00 1000 100µ 1.00 Power (W) -ID (Amps) 20 1ms RDS(ON) limited 0.10 10ms 0.1s 10s DC 100 10 0.01 0.1 1 10 100 1 0.000001 -VDS (Volts) Zθ JA Normalized Transient Thermal Resistance 10 1 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=85°C/W 0.0001 0.01 1 100 10000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-to-15 Ambient (Note E) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 12 0.1 PD 0.01 Ton Single Pulse 0.001 0.00001 0.0001 0.001 0.01 0.1 1 T 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) 4/5 www.freescale.net.cn AON2801 Dual P-Channel Enhancement Mode Field Effect Transistor Gate Charge Test Circuit & Waveform Vgs Qg -10V - - VDC Qgd + + DUT Qgs Vds VDC Vgs Ig Charge Resistive Switching Test Circuit & W aveform s RL Vds t off t on td(on) Vgs - D UT Vgs t d(off) tr 90% Vdd VDC tf + Rg Vgs 10% Vds Diode Recovery Test Circuit & W aveform s Q rr = - Idt Vds + D UT Vds - Isd Vgs Ig 5/5 Vgs L -Isd + Vdd t rr dI/dt -I R M Vdd VD C - -I F -Vds www.freescale.net.cn