AON4407 12V P-Channel MOSFET General Description The AON4407 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch. Features VDS (V) = -12V ID = -9 A (VGS = -4.5V) RDS(ON) < 20mΩ (VGS = -4.5V) RDS(ON) < 25mΩ (VGS = -2.5V) RDS(ON) < 31mΩ (VGS = -1.8V) D DFN 3x2 Top View Bottom View Pin 1 D D D D D D G S Rg G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TA=25°C Continuous Drain Current Pulsed Drain Current Power Dissipation B C TA=25°C Junction and Storage Temperature Range 1/5 -7 IDM -60 t ≤ 10s Steady State Steady State A 2.5 W 1.6 TJ, TSTG Symbol AD V ID PD TA=70°C A ±8 -9 TA=70°C Thermal Characteristics Parameter Maximum Junction-to-Ambient Maximum Junction-to-Ambient Maximum Junction-to-Lead -12 Units V Maximum RθJA RθJL -55 to 150 Typ 42 74 25 Max 50 90 30 °C Units °C/W °C/W °C/W www.freescale.net.cn AON4407 12V P-Channel MOSFET Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=-250µA, VGS=0V -12 -1 Zero Gate Voltage Drain Current IGSS Gate-Body leakage current VDS=0V, VGS=±8V VGS(th) Gate Threshold Voltage VDS=VGS ID=-250µA -0.35 ID(ON) On state drain current VGS=-4.5V, VDS=-5V -60 TJ=55°C VGS=-4.5V, ID=-9A 25 mΩ 31 mΩ VGS=-1.5V, ID=-7A 29 38 mΩ 45 Maximum Body-Diode Continuous Current -0.53 DYNAMIC PARAMETERS Ciss Input Capacitance 1740 VGS=0V, VDS=-6V, f=1MHz VGS=0V, VDS=0V, f=1MHz SWITCHING PARAMETERS Qg Total Gate Charge Gate Source Charge A 24 IS Qgs V 20 IS=-1A,VGS=0V Gate resistance -0.85 VGS=-1.8V, ID=-7.5A Diode Forward Voltage Rg µA VGS=-2.5V, ID=-8.5A VSD Reverse Transfer Capacitance ±10 26 VDS=-5V, ID=-9A Crss -0.5 µA 22 Forward Transconductance Output Capacitance -5 20 gFS Coss Units 16.5 TJ=125°C Static Drain-Source On-Resistance Max V VDS=-12V, VGS=0V IDSS RDS(ON) Typ VGS=-4.5V, VDS=-6V, ID=-9A mΩ S -1 V -2.5 A 2100 pF 334 pF 200 pF 1.3 1.7 kΩ 19 23 nC 4.5 nC Qgd Gate Drain Charge 5.3 nC tD(on) Turn-On DelayTime 240 ns tr Turn-On Rise Time 580 ns tD(off) Turn-Off DelayTime 7 µs tf Turn-Off Fall Time 4.2 µs VGS=-4.5V, VDS=-6V, RL=0.67Ω, RGEN=3Ω trr Body Diode Reverse Recovery Time IF=-9A, dI/dt=100A/µs 22 Qrr Body Diode Reverse Recovery Charge IF=-9A, dI/dt=100A/µs 17 27 ns nC A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating. Rev 1: June 2009 2/5 www.freescale.net.cn AON4407 12V P-Channel MOSFET TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 60 60 -4.5V 50 -2.5V -3V 40 40 -2V -ID(A) -ID (A) VDS=-5V 50 30 30 20 20 VGS=-1.5V 10 125°C 10 25°C 0 0 0 1 2 3 4 0 5 1 1.5 2 2.5 3 -VGS(Volts) Figure 2: Transfer Characteristics(Note E) -VDS (Volts) Figure 1: On-Region Characteristics(Note E) 45 35 VGS=-2.5V 30 VGS=-1.8V 25 20 15 Normalized On-Resistance 1.6 VGS=-1.5V 40 RDS(ON) (mΩ ) 0.5 VGS=-4.5V 10 0 2 4 6 8 10 1.5 VGS=-4.5V ID=-9A 1.4 1.3 1.2 VGS=-1.8V ID=-7.5A 1.1 1.0 VGS=-1.5V ID=-7A 0.9 0.8 I12 dI/dt=100A/µs 14 16 18 20 F=-6.5A, 0 -ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage(Note E) 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature(Note E) 1E+01 50 45 25 ID=-9A 1E+00 1E-01 35 125°C -IS (A) RDS(ON) (mΩ ) 40 30 1E-02 125°C 25°C 25 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER 1E-03 MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING 20 1E-04 THE RIGHT TO IMPROVE PRODUCT DESIGN, OUT OF 15 SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES 25°C FUNCTIONS AND RELIABILITY WITHOUT NOTICE. 10 1E-05 0 2 4 6 8 0.0 0.2 0.4 0.6 0.8 1.0 -VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage(Note E) 3/5 -VSD (Volts) Figure 6: Body-Diode Characteristics(Note E) www.freescale.net.cn AON4407 12V P-Channel MOSFET TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 2800 4.5 VDS=-6V ID=-9A 4 2400 -VGS (Volts) 3 2.5 2 1.5 Ciss 2000 Capacitance (pF) 3.5 1600 1200 Coss 800 1 0.5 400 0 0 0 4 8 12 16 20 Crss 0 -Qg (nC) Figure 7: Gate-Charge Characteristics 2 4 6 RDS(ON) limited 10ms 1 100ms DC 0.1 TJ(Max)=150°C TA=25°C 1ms Power (W) -ID (Amps) 12 1000 10µs 10s TJ(Max)=150°C TA=25°C 0.01 0.01 0.1 I =-6.5A, dI/dt=100A/µs 10 100 F 1 -VDS (Volts) 10 1 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=90°C/W 100 10 1 0.00001 0.001 0.1 10 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junctionto-Ambient (Note F) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) Zθ JA Normalized Transient Thermal Resistance 10 -VDS (Volts) Figure 8: Capacitance Characteristics 100 10 8 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL PD COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH 0.01 APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, Ton FUNCTIONS AND RELIABILITY WITHOUT NOTICE. T Single Pulse 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance(Note F) 4/5 www.freescale.net.cn 1000 AON4407 12V P-Channel MOSFET Gate Charge Test Circuit & W aveform Vgs Qg -10V - - VDC Qgd + + DUT Qgs Vds VDC Vgs Ig Charge Resistive Switching Test Circuit & W aveforms RL Vds t off t on Vgs - DUT Vgs VDC td(on) t d(off) tr tf 90% Vdd + Rg Vgs 10% Vds Diode Recovery Test Circuit & W aveforms Q rr = - Idt Vds + DUT Vds - Isd Vgs Ig 5/5 Vgs L -Isd + Vdd -I F t rr dI/dt -I RM Vdd VDC - -Vds www.freescale.net.cn