SHENZHENFREESCALE AO4484

AO4484
40V N-Channel MOSFET
General Description
The AO4484 uses advanced trench technology to provide excellent RDS(ON) with low gate charge. This is
an all purpose device that is suitable for use in a wide range of power conversion applications.
Features
VDS (V) = 40V
ID = 10A
(VGS = 10V)
RDS(ON) < 10mΩ
(VGS = 10V)
RDS(ON) < 12mΩ
(VGS = 4.5V)
D
G
S
Absolute Maximum Ratings TJ=25°C unless otherwise noted
Parameter
Symbol
10 Sec
Drain-Source Voltage
VDS
40
Gate-Source Voltage
±20
VGS
TA=25°C
Continuous Drain
A
Current
Pulsed Drain Current
TA=70°C
ID
B
Avalanche Current G
Repetitive avalanche energy L=0.3mH
TA=25°C
A
Power Dissipation
TA=70°C
G
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Maximum Junction-to-Lead
1/4
C
10
10.8
8
120
IAR
23
EAR
79
PD
1.7
2.0
1.1
RθJA
RθJL
-55 to 150
Typ
31
59
16
A
mJ
3.1
TJ, TSTG
Units
V
V
13.5
IDM
Symbol
t ≤ 10s
Steady State
Steady State
Steady State
W
°C
Max
40
75
24
Units
°C/W
°C/W
°C/W
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AO4484
40V N-Channel MOSFET
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
IDSS
Zero Gate Voltage Drain Current
Conditions
Min
ID = 250µA, VGS = 0V
1
TJ = 55°C
5
IGSS
Gate-Body leakage current
VDS = 0V, VGS = ±20V
Gate Threshold Voltage
VDS = VGS ID = 250µA
1.7
ID(ON)
On state drain current
VGS = 10V, VDS = 5V
120
±100
VGS = 10V, ID = 10A
TJ=125°C
2.2
3
8.2
10
12.5
16
10
12.5
Forward Transconductance
VDS = 5V, ID = 10A
75
VSD
Diode Forward Voltage
IS = 1A,VGS = 0V
IS
Maximum Body-Diode Continuous Current
0.72
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
1500
VGS=0V, VDS=20V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
SWITCHING PARAMETERS
Qg (10V) Total Gate Charge
Qg (4.5V) Total Gate Charge
Qgs
Gate Source Charge
Qgd
tD(on)
VGS=10V, VDS=20V, ID=10A
2
µA
nA
V
A
VGS = 4.5V, ID = 8A
gFS
Units
V
VDS = 40V, VGS = 0V
Static Drain-Source On-Resistance
Max
40
VGS(th)
RDS(ON)
Typ
mΩ
S
1
V
2.5
A
1950
pF
215
pF
135
pF
3.5
5
Ω
27.2
37
nC
13.6
18
nC
4.5
nC
Gate Drain Charge
6.4
nC
Turn-On DelayTime
6.4
ns
17.2
ns
29.6
ns
VGS=10V, VDS=20V, RL= 2Ω,
RGEN=3Ω
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf
trr
Body Diode Reverse Recovery Time
IF=10A, dI/dt=100A/µs
30
Qrr
Body Diode Reverse Recovery Charge IF=10A, dI/dt=100A/µs
19
Turn-Off Fall Time
16.8
ns
40
ns
nC
A: The value of R θJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA = 25°C. The
value in any given application depends on the user's specific board design.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using t ≤ 300µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA
curve provides a single pulse rating.
0
F. The current rating is based on the t ≤ 10s thermal resistance rating.
G. EAR and IAR ratings are based on low frequency and duty cycles to keep Tj=25C.
Rev1: Nov. 2010
2/4
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AO4484
40V N-Channel MOSFET
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100
120
10V
VDS= 5V
4.5V
100
80
80
60
ID(A)
ID (A)
60
4V
40
40
3.5V
125°C
20
20
25°C
VGS= 3V
0
0
0
1
2
3
4
2
5
16
3
3.5
4
4.5
Normalized On-Resistance
1.8
14
RDS(ON) (mΩ )
2.5
VGS(Volts)
Figure 2: Transfer Characteristics
VDS (Volts)
Figure 1: On-Region Characteristics
12
VGS= 4.5V
10
8
VGS= 10V
6
4
VGS= 10V
ID= 10A
1.6
1.4
VGS= 4.5V
ID=8A
1.2
1.0
0.8
0
5
10
IF=-6.5A,
15 dI/dt=100A/µs
20
0
ID (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
25
50
75
100
125
150
175
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature
25
1E+02
ID= 10A
1E+01
1E+00
IS (A)
RDS(ON) (mΩ )
20
125°C
15
1E-01
125°C
1E-02
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED.
AOS DOES NOT ASSUME ANY LIABILITY ARISING
1E-03
10
25°C
25°CPRODUCT DESIGN,
OUT OF SUCH APPLICATIONS OR USES OF
ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE
1E-04
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
1E-05
5
2
4
6
8
10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
3/4
0.0
0.2
0.4
0.6
0.8
1.0
VSD (Volts)
Figure 6: Body-Diode Characteristics
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1.2
AO4484
40V N-Channel MOSFET
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
2500
10
VDS= 20V
ID= 10A
2000
Capacitance (pF)
VGS (Volts)
8
6
4
Ciss
1500
1000
2
500
0
0
Coss
Crss
0
5
10
15
20
25
0
30
10
20
30
40
VDS (Volts)
Figure 8: Capacitance Characteristics
Qg (nC)
Figure 7: Gate-Charge Characteristics
1000
1000
TJ(Max)=150°C
TA=25°C
100
10
100µs
RDS(ON)
limited
1
0.1
1m
10ms
100ms
10s
TJ(Max)=150°C
TA=25°C
VDS (Volts)
Zθ JA Normalized Transient
Thermal Resistance
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=75°C/W
0.01
1
100
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junctionto-Ambient (Note E)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
1
10
1
0.0001
IF=-6.5A,
dI/dt=100A/µs
10
100
1
10
100
DC
0.01
0.1
Power (W)
ID (Amps)
10µs
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
PD
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES
NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH
0.01 APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
Ton
T
FUNCTIONS AND RELIABILITY WITHOUT
SingleNOTICE.
Pulse
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance(Note E)
4/4
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