SHENZHENFREESCALE AO4447A

AO4447A
30V P-Channel MOSFET
General Description
The AO4447A uses advanced trench technology to provide excellent RDS(ON) with low gate charge.This
device is ideal for load switch and battery protection applications.
Features
VDS (V) = -30V
ID = -17A
RDS(ON) < 7mΩ
RDS(ON) < 8mΩ
RDS(ON) < 9mΩ
(VGS = -10V)
(VGS = -10V)
(VGS = -4.5V)
(VGS = -4V)
SOIC-8
D
Rg
G
S
Absolute Maximum Ratings TJ=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
Continuous Drain
Current
Pulsed Drain Current
Power Dissipation B
VGS
TA=25°C
TA=70°C
TA=25°C
±20
V
ID
-13
IDM
-160
TA=70°C
W
2.0
TJ, TSTG
Symbol
t ≤ 10s
Steady State
Steady State
A
3.1
PD
Junction and Storage Temperature Range
1/5
Units
V
-17
C
Parameter
A
Maximum Junction-to-Ambient
Maximum Junction-to-Ambient AD
Maximum Junction-to-Lead
-30
Maximum
RθJA
RθJL
-55 to 150
Typ
31
59
16
Max
40
75
24
°C
Units
°C/W
°C/W
°C/W
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AO4447A
30V P-Channel MOSFET
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
Conditions
Min
ID =-250µA, VGS = 0V
-30
-1
Zero Gate Voltage Drain Current
IGSS
Gate-Body leakage current
VDS = 0V, VGS =±16V
VGS(th)
Gate Threshold Voltage
VDS =VGS ID =-250µA
-0.8
On state drain current
VGS =-10V, VDS =-5V
-160
TJ = 55°C
VGS =-10V, ID =-17A
RDS(ON)
Static Drain-Source On-Resistance
TJ=125°C
7
A
9
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS
Input Capacitance
Ciss
Reverse Transfer Capacitance
5.5
6.9
IS
Gate resistance
V
VGS =-4V, ID =-13A
VDS =-5V, ID =-17A
Rg
µA
8
IS =-1A,VGS = 0V
Crss
±10
8.5
Forward Transconductance
70
-1
V
-3
A
5500
pF
755
pF
564
VGS=0V, VDS=0V, f=1MHz
pF
160
210
SWITCHING PARAMETERS
Qg (-10V) Total Gate Charge
87
105
Qg (-4.5V) Total Gate Charge
41
Qgs
Gate Source Charge
Qgd
Gate Drain Charge
tD(on)
Turn-On DelayTime
tr
Turn-On Rise Time
VGS=-10V, VDS=-15V, ID=-17A
VGS=-10V, VDS=-15V
RL=-0.9Ω, RGEN=3Ω
Ω
nC
nC
12.8
nC
17
nC
180
ns
260
ns
1.2
µs
9.7
µs
tD(off)
Turn-Off DelayTime
tf
trr
Turn-Off Fall Time
IF=-17A, dI/dt=300A/µs
32
Qrr
Body Diode Reverse Recovery Charge IF=-17A, dI/dt=300A/µs
77
Body Diode Reverse Recovery Time
mΩ
S
-0.62
4580
VGS=0V, VDS=-15V, f=1MHz
µA
-1.6
7
Diode Forward Voltage
Units
-1.3
6.5
VSD
Output Capacitance
-5
VGS =-4.5V, ID =-15A
gFS
Coss
Max
V
VDS =-30V, VGS = 0V
IDSS
ID(ON)
Typ
40
ns
nC
A: The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
value in any given application depends on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initial TJ =25°C.
D. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
#REF!
F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2 FR-4 board with
2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse ratin g.
Rev 1: Nov. 2010
2/5
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AO4447A
30V P-Channel MOSFET
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100
160
-10V
140
-4V
VDS=-5V
-3.5V
-4.5V
120
80
60
80
-ID(A)
-ID (A)
100
-3V
40
60
40
125°C
20
VGS= -2.5V
20
25°C
0
0
0
1
2
3
4
0
5
10
2
3
4
Normalized On-Resistance
1.8
8
RDS(ON) (mΩ )
1
-VGS(Volts)
Figure 2: Transfer Characteristics(Note E)
-VDS (Volts)
Figure 1: On-Region Characteristics(Note E)
VGS=-4V
6
VGS=-4.5V
VGS=-10V
4
2
VGS= -10V
ID= -17A
1.6
1.4
VGS= -4.5V
ID= -15A
1.2
1.0
0.8
0
5
10
15
IF=-6.5A,
dI/dt=100A/µs
20
25
30
0
-ID (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage(Note E)
25
50
75
100
125
150
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature(Note E)
20
1E+02
ID= -17A
1E+01
16
125°C
IS (A)
RDS(ON) (mΩ )
1E+00
12
1E-01
125°C
8
1E-02
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED.
AOS DOES NOT ASSUME ANY LIABILITY ARISING
1E-03
4
25°C
OUT OF SUCH APPLICATIONS OR USES OF 25°C
ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE
PRODUCT DESIGN,
1E-04
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
0
1E-05
2
4
6
8
10
0.0
0.2
0.4
0.6
0.8
1.0
-VGS (Volts)
-VSD (Volts)
Figure 5: On-Resistance vs. Gate-Source
Figure 6: Body-Diode Characteristics(Note E)
Voltage(Note E)
3/5
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AO4447A
30V P-Channel MOSFET
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
7000
10
VDS=-15V
ID= -17A
6000
Capacitance (pF)
-VGS (Volts)
8
6
4
Ciss
5000
4000
3000
2000
Coss
2
1000
Crss
0
0
0
20
40
60
80
0
100
20
25
30
100µs
1ms
10ms
100ms
10s
DC
TJ(Max)=150°C
TA=25°C
0.01
0.01
0.1
30
Power (W)
-ID (Amps)
10µs
RDS(ON)
limited
1
20
10
0
0.001
I =-6.5A,
dI/dt=100A/µs
10
100
F
1
-VDS (Volts)
10
1
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=75°C/W
0.1
10
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toAmbient (Note F)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
Zθ JA Normalized Transient
Thermal Resistance
15
TJ(Max)=150°C
TA=25°C
100
0.1
10
40
1000
10
5
-VDS (Volts)
Figure 8: Capacitance Characteristics
Qg (nC)
Figure 7: Gate-Charge Characteristics
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
PD
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES
NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH
0.01 APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
Ton
T
FUNCTIONS AND RELIABILITY WITHOUT
SingleNOTICE.
Pulse
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance(Note F)
4/5
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AO4447A
30V P-Channel MOSFET
Gate Charge Test Circuit & Waveform
Vgs
Qg
-10V
-
-
VDC
Qgd
+
+
DUT
Qgs
Vds
VDC
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
toff
ton
Vgs
-
DUT
Vgs
VDC
td(on)
td(off)
tr
tf
90%
Vdd
+
Rg
Vgs
10%
Vds
Diode Recovery Test Circuit & Waveforms
Q rr = - Idt
Vds +
DUT
Vgs
Vds Isd
Vgs
Ig
5/5
L
-Isd
+ Vdd
t rr
dI/dt
-I RM
Vdd
VDC
-
-I F
-Vds
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