AON6404A 30V N-Channel MOSFET General Description The AON6404A combines advanced trench MOSFET technology with a low resistance package to provide extremely low R DS(ON) . This device is ideal for load switch and battery protection applications. Features VDS 30V ID (at VGS=10V) 85A RDS(ON) (at VGS=10V) < 2.3mΩ RDS(ON) (at VGS=4.5V) < 3.0mΩ D Top View 1 8 2 7 3 6 4 5 G S Absolute Maximum Ratings TA=25°C unless otherwise noted Symbol Parameter Drain-Source Voltage VDS Gate-Source Voltage VGS TC=25°C Continuous Drain CurrentG Pulsed Drain Current Continuous Drain Current A 25 A 19 Avalanche Current C IAS, IAR 60 A Avalanche energy L=0.1mH C TC=25°C EAS, EAR 180 mJ Power Dissipation B TC=100°C Power Dissipation A TA=70°C 2.3 Steady-State Steady-State RθJA RθJC W 1.4 TJ, TSTG Symbol t ≤ 10s W 33 PDSM Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case 83 PD TA=25°C 1/6 V 280 IDSM TA=70°C ±20 67 IDM TA=25°C Units V 85 ID TC=100°C C Maximum 30 -55 to 150 Typ 14 40 1 °C Max 17 55 1.5 Units °C/W °C/W °C/W www.freescale.net.cn AON6404A 30V N-Channel MOSFET Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS Drain-Source Breakdown Voltage BVDSS Conditions ID=250µA, VGS=0V Min Typ 30 36 VDS=30V, VGS=0V Zero Gate Voltage Drain Current IGSS Gate-Body leakage current VDS=0V, VGS= ±16V VGS(th) Gate Threshold Voltage VDS=VGS ID=250µA 1.3 ID(ON) On state drain current VGS=10V, VDS=5V 280 TJ=55°C Units V 1 IDSS 5 µA 10 uA 1.85 2.4 V 1.9 2.3 2.8 3.4 VGS=4.5V, ID=20A 2.4 3 mΩ 1 V 85 A VGS=10V, ID=20A RDS(ON) Max Static Drain-Source On-Resistance TJ=125°C A gFS Forward Transconductance VDS=5V, ID=20A 130 VSD Diode Forward Voltage IS=1A,VGS=0V 0.67 IS Maximum Body-Diode Continuous CurrentG DYNAMIC PARAMETERS Ciss Input Capacitance mΩ S 3450 4335 5210 pF 500 720 950 pF 260 435 610 pF 1 2 3 Ω SWITCHING PARAMETERS Qg(10V) Total Gate Charge 55 71 86 nC Qg(4.5V) Total Gate Charge 25 33 40 Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance Qgs Gate Source Charge Qgd Gate Drain Charge VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz VGS=10V, VDS=15V, ID=20A tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time Qrr Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs VGS=10V, VDS=15V, RL=0.75Ω, RGEN=3Ω nC 16 nC 10 ns 6.5 ns 75.5 ns 17.5 IF=20A, dI/dt=500A/µs nC 10 29 ns 35 13.5 ns nC A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design, and the maximum temperature of 150°C may be used if the PCB allows it. B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating. G. The maximum current rating is package limited. H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. 2/6 www.freescale.net.cn AON6404A 30V N-Channel MOSFET TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 120 100 VDS=5V 3.5V 100 80 4.5V 80 3V 10V ID(A) ID (A) 60 60 40 125°C 40 25°C 20 20 VGS=2.5V 0 0 0 1 2 3 4 1 5 5 2 2.5 3 3.5 4 Normalized On-Resistance 2.2 4 RDS(ON) (mΩ Ω) 1.5 VGS(Volts) Figure 2: Transfer Characteristics (Note E) VDS (Volts) Fig 1: On-Region Characteristics (Note E) 3 VGS=4.5V 2 VGS=10V 1 2 VGS=10V ID=20A 1.8 17 5 2 10 =4.5V 1.6 1.4 1.2 VGS ID=20A 1 0.8 0 0 5 0 10 15 20 25 30 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 25 50 75 100 125 150 175 200 0 Temperature (°C) Figure 4: On-Resistance vs. Junction 18Temperature (Note E) 6 1.0E+02 ID=20A 1.0E+01 5 40 1.0E+00 125°C IS (A) RDS(ON) (mΩ Ω) 4 3 25°C 2 125°C 1.0E-02 25°C 1.0E-03 1 1.0E-04 0 1.0E-05 2 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) 3/6 1.0E-01 4 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) www.freescale.net.cn AON6404A 30V N-Channel MOSFET TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 6000 10 VDS=15V ID=20A 5000 Capacitance (pF) VGS (Volts) 8 6 4 2 4000 3000 2000 Coss 1000 0 Crss 0 0 10 20 30 40 50 60 70 Qg (nC) Figure 7: Gate-Charge Characteristics 0 80 5 10 15 20 VDS (Volts) Figure 8: Capacitance Characteristics 25 200 1000.0 10µs 10µs 100µs 10.0 1ms 10ms DC 1.0 TJ(Max)=150°C TC=25°C 0.1 Power (W) RDS(ON) 100.0 ID (Amps) Ciss 160 TJ(Max)=150°C TC=25°C 120 17 5 2 10 80 40 0.0 0 0.01 0.1 1 VDS (Volts) 10 100 0.0001 0.001 0.01 0.1 1 0 10 Pulse Width (s) 18 Figure 10: Single Pulse Power Rating Junction-to-Case (Note F) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) Zθ JC Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC 1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 40 RθJC=1.5°C/W PD 0.1 Ton T Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) 4/6 www.freescale.net.cn AON6404A 30V N-Channel MOSFET TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 100 TA=25°C Power Dissipation (W) IAR (A) Peak Avalanche Current 1000 TA=100°C 100 TA=150°C TA=125°C 10 1 60 40 20 0 1 10 100 Time in avalanche, tA (µ µs) Figure 12: Single Pulse Avalanche capability C) 1000 0 25 75 100 125 TCASE (°C) Figure 13: Power De-rating (Note F) (Note 50 150 10000 100 TA=25°C 80 1000 Power (W) Current rating ID(A) 80 60 40 17 5 2 10 100 10 20 1 0 0 25 50 75 100 125 TCASE (°C) Figure 14: Current De-rating (Note F) 150 0.00001 0.001 10 0 0.1 1000 Pulse Width (s) 18 Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H) Zθ JA Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA 1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 40 RθJA=55°C/W 0.1 PD 0.01 Single Pulse Ton T 0.001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 16: Normalized Maximum Transient Thermal Impedance (Note H) 5/6 www.freescale.net.cn AON6404A 30V N-Channel MOSFET Gate Charge Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC - DUT Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds Vds 90% + Vdd DUT Vgs VDC - Rg 10% Vgs Vgs t d(on) tr t d(off) t on tf toff Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L 2 E AR = 1/2 LIAR Vds BVDSS Vds Id + Vdd Vgs Vgs I AR VDC - Rg Id DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vds Isd Vgs Ig 6/6 Vgs L Isd + Vdd t rr dI/dt I RM Vdd VDC - IF Vds www.freescale.net.cn