AON7418 30V N-Channel AlphaMOS General Description • Latest Trench Power AlphaMOS (α MOS LV) technology • Very Low RDS(on) at 4.5V GS • Low Gate Charge • High Current Capability • RoHS and Halogen-Free Compliant Application al Industri • DC/DC Converters in Computing, Servers, and POL • Isolated DC/DC Converters in Telecom and Product Summary VDS 30V 50A ID (at VGS=10V) RDS(ON) (at VGS=10V) < 1.7mΩ RDS(ON) (at VGS = 4.5V) < 2.8mΩ 100% UIS Tested 100% Rg Tested D Top View 1 8 2 7 3 6 4 5 G S Absolute Maximum Ratings TA=25°C unless otherwise noted Symbol Parameter Drain-Source Voltage VDS VGS Gate-Source Voltage TC=25°C Continuous Drain CurrentG Pulsed Drain Current Avalanche Current C V A 200 46 IDSM TA=70°C ±20 39 IDM TA=25°C Continuous Drain Current Units V 50 ID TC=100°C C Maximum 30 A 37 IAS 66 A Avalanche energy L=0.05mH C EAS 109 mJ VDS Spike VSPIKE 36 V 100ns TC=25°C Power Dissipation B PD TC=100°C TA=25°C Power Dissipation A Junction and Storage Temperature Range 1/6 6.2 Steady-State Steady-State RθJA RθJC W 4 TJ, TSTG Symbol t ≤ 10s W 33 PDSM TA=70°C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case 83 -55 to 150 Typ 16 45 1.1 °C Max 20 55 1.5 Units °C/W °C/W °C/W www.freescale.net.cn AON7418 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS Drain-Source Breakdown Voltage BVDSS IDSS Zero Gate Voltage Drain Current Conditions Min ID=250µA, VGS=0V Gate-Body leakage current VDS=0V, VGS= ±20V Gate Threshold Voltage VDS=VGS，ID=250µA RDS(ON) Static Drain-Source On-Resistance 5 1.2 VGS=10V, ID=20A VGS=4.5V, ID=20A 2.2 2.8 153 0.7 Forward Transconductance Diode Forward Voltage IS=1A,VGS=0V IS Maximum Body-Diode Continuous Current G DYNAMIC PARAMETERS Ciss Input Capacitance Reverse Transfer Capacitance Rg Gate resistance VGS=0V, VDS=0V, f=1MHz Qgs Gate Source Charge Qgd tD(on) VGS=10V, VDS=15V, ID=20A 0.4 mΩ mΩ S 1 V 50 A 2994 VGS=0V, VDS=15V, f=1MHz SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge V 1.7 gFS Crss nA 2.2 2.6 VSD µA 100 1.4 VDS=5V, ID=20A Output Capacitance 1.8 2.1 TJ=125°C Units V 1 TJ=55°C VGS(th) Max 30 VDS=30V, VGS=0V IGSS Coss Typ pF 1276 pF 196 pF 0.9 1.4 Ω 47.7 65 nC 23 31 nC 7.6 nC Gate Drain Charge 10 nC Turn-On DelayTime 10.5 ns 7.5 ns tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time Qrr VGS=10V, VDS=15V, RL=0.75Ω, RGEN=3Ω 30.8 ns 8.8 ns IF=20A, dI/dt=500A/µs 20 Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs 46 ns nC A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Single pulse width limited by junction temperature TJ(MAX)=150°C. D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating. G. The maximum current rating is package limited. H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. 2/6 www.freescale.net.cn AON7418 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 100 100 4.5V VDS=5V 80 80 10V 60 3.5V ID(A) ID (A) 60 3V 40 40 20 20 125°C 25°C VGS=2.5V 0 0 0 1 2 3 4 0 5 5 2 3 4 5 6 Normalized On-Resistance 2 4 RDS(ON) (mΩ Ω) 1 VGS(Volts) Figure 2: Transfer Characteristics (Note E) VDS (Volts) Fig 1: On-Region Characteristics (Note E) VGS=4.5V 3 2 1 VGS=10V 1.8 VGS=10V ID=20A 1.6 1.4 1.2 VGS=4.5V ID=20A 1 0.8 0 0 5 0 10 15 20 25 30 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 25 50 75 100 125 150 175 200 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature (Note E) 5 1.0E+02 ID=20A 1.0E+01 4 40 1.0E+00 125°C IS (A) RDS(ON) (mΩ Ω) 125°C 3 1.0E-01 1.0E-02 25°C 2 1.0E-03 1 25°C 1.0E-04 1.0E-05 0 0.0 2 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) 3/6 0.2 0.4 0.6 0.8 1.0 1.2 4 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) www.freescale.net.cn AON7418 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 4000 Ciss 3000 Capacitance (pF) VGS (Volts) 3500 VDS=15V ID=20A 8 6 4 2500 2000 Coss 1500 1000 Crss 2 500 0 0 0 10 20 30 40 Qg (nC) Figure 7: Gate-Charge Characteristics 50 0 10µs RDS(ON) 400 10.0 100µs DC 1ms 10ms 1.0 TJ(Max)=150°C TC=25°C 0.1 TJ(Max)=150°C TC=25°C 10µs Power (W) ID (Amps) 25 500 1000.0 100.0 5 10 15 20 VDS (Volts) Figure 8: Capacitance Characteristics 300 200 100 0.0 0 0.01 0.1 1 VDS (Volts) 10 100 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-to-Case (Note F) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) Zθ JC Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse RθJC=1.5°C/W 1 PD 0.1 Single Pulse Ton T 0.01 0.00001 0.0001 0.001 0.01 0.1 1 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) 4/6 www.freescale.net.cn 10 AON7418 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 100 60 50 80 Current rating ID(A) Power Dissipation (W) 90 70 60 50 40 30 20 40 30 20 10 10 0 0 0 25 50 75 100 125 TCASE (° °C) Figure 12: Power De-rating (Note F) 150 0 25 50 75 100 125 TCASE (° °C) Figure 13: Current De-rating (Note F) 150 TA=25°C Zθ JA Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA 1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse RθJA=55°C/W 40 0.1 PD 0.01 Single Pulse Ton T 0.001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 15: Normalized Maximum Transient Thermal Impedance (Note H) 5/6 www.freescale.net.cn AON7418 Gate Charge Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC - DUT Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds Vds 90% + Vdd DUT Vgs VDC - Rg 10% Vgs Vgs t d(on) tr t d(off) t on tf toff Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L 2 E AR = 1/2 LIAR Vds BVDSS Vds Id + Vdd Vgs Vgs I AR VDC - Rg Id DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vds Isd Vgs Ig 6/6 Vgs L Isd + Vdd t rr dI/dt I RM Vdd VDC - IF Vds www.freescale.net.cn