AON7522E 30V N-Channel AlphaMOS General Description • Latest Trench Power AlphaMOS ( αMOS LV) technology • Very Low RDS(on) at 4.5VGS • Low Gate Charge • ESD protection • RoHS and Halogen-Free Compliant Features VDS 30V 34A ID (at VGS=10V) RDS(ON) (at VGS=10V) < 4mΩ RDS(ON) (at VGS = 4.5V) < 6.8mΩ D Top View S 1 8 S S 2 7 3 6 D D D G 4 5 D G S Absolute Maximum Ratings TA=25°C unless otherwise noted Symbol Parameter Drain-Source Voltage VDS Gate-Source Voltage VGS TC=25°C Continuous Drain CurrentG Pulsed Drain Current Continuous Drain Current C A 21 A 17 Avalanche Current C IAS 35 A Avalanche energy L=0.05mH C EAS 31 mJ VDS Spike VSPIKE 36 V 100ns TC=25°C Power Dissipation B TC=100°C Power Dissipation A TA=70°C 3.1 Steady-State Steady-State RθJA RθJC W 2 TJ, TSTG Symbol t ≤ 10s W 12 PDSM Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case 31 PD TA=25°C 1/6 V 136 IDSM TA=70°C ±20 27 IDM TA=25°C Units V 34 ID TC=100°C Maximum 30 °C -55 to 150 Typ 30 60 3.2 Max 40 75 4 Units °C/W °C/W °C/W www.freescale.net.cn AON7522E 30V N-Channel AlphaMOS Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS Drain-Source Breakdown Voltage BVDSS Conditions Min ID=250µA, VGS=0V Zero Gate Voltage Drain Current IGSS Gate-Body leakage current VDS=0V, VGS= ±20V VGS(th) Gate Threshold Voltage VDS=VGS,ID=250µA RDS(ON) Static Drain-Source On-Resistance 30 TJ=55°C 5 1.2 TJ=125°C VGS=4.5V, ID=16A gFS Forward Transconductance VDS=5V, ID=20A VSD Diode Forward Voltage IS=1A,VGS=0V IS Maximum Body-Diode Continuous CurrentG DYNAMIC PARAMETERS Ciss Input Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge Qgs Gate Source Charge Qgd tD(on) VGS=10V, VDS=15V, ID=20A 1.8 µA ±10 µA 2.2 V 3.2 4 5 6.2 5.3 6.8 mΩ 1 V 34 A 62 0.7 mΩ S 1540 pF 485 pF 448 pF 1.7 2.6 Ω 33.4 45 nC 19.7 27 nC 3.3 nC Gate Drain Charge 15.0 nC Turn-On DelayTime 7 ns 8.3 ns 24 ns 10 ns 15.2 ns nC tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr IF=20A, dI/dt=500A/µs Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs Qrr 0.8 Units V 1 VGS=10V, ID=20A Output Capacitance Max VDS=30V, VGS=0V IDSS Coss Typ VGS=10V, VDS=15V, RL=0.75Ω, RGEN=3Ω 22.2 A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating. G. The maximum current rating is package limited. H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. 2/6 www.freescale.net.cn AON7522E 30V N-Channel AlphaMOS TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 30 30 3.5V VDS=5V 4.5V 20 3V 20 ID(A) ID (A) 10V 125°C 10 10 VGS=2.5V 25°C 0 0 0 1 2 3 4 1 5 8 Normalized On-Resistance VGS=4.5V 4 2 VGS=10V 0 4 5 1.8 VGS=10V ID=20A 1.6 17 5 2 VGS=4.5V ID=16A10 1.4 1.2 1 0.8 0 0 5 10 15 20 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 25 50 75 100 125 150 175 200 0 Temperature (°C) Figure 4: On-Resistance vs. Junction 18Temperature (Note E) 1.0E+02 9 ID=20A 1.0E+01 40 125°C 1.0E+00 125°C IS (A) 6 RDS(ON) (mΩ Ω) 3 2 6 RDS(ON) (mΩ Ω) 2 VGS(Volts) Figure 2: Transfer Characteristics (Note E) VDS (Volts) Fig 1: On-Region Characteristics (Note E) 3 25°C 1.0E-01 1.0E-02 25°C 1.0E-03 1.0E-04 1.0E-05 0 2 3/6 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) www.freescale.net.cn AON7522E 30V N-Channel AlphaMOS TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 2500 VDS=15V ID=20A 2000 Capacitance (pF) VGS (Volts) 8 6 4 2 Ciss 1500 1000 Coss 500 Crss 0 0 0 5 10 15 20 25 30 Qg (nC) Figure 7: Gate-Charge Characteristics 35 0 30 200 1000.0 RDS(ON) 100µs 10.0 1ms DC 10ms 100ms 1.0 TJ(Max)=150°C TC=25°C 0.1 TJ(Max)=150°C TC=25°C 160 10µs Power (W) 10µs 100.0 ID (Amps) 10 20 VDS (Volts) Figure 8: Capacitance Characteristics 17 5 2 10 120 80 40 0.0 0 0.01 0.1 1 VDS (Volts) 10 100 0.0001 0.001 0.01 0.1 1 0 10 Pulse Width (s) 18 Figure 10: Single Pulse Power Rating Junction-to-Case (Note F) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) Zθ JC Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC 1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 40 RθJC=4°C/W 0.1 PD 0.01 Ton T Single Pulse 0.001 1E-05 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) 4/6 www.freescale.net.cn AON7522E 30V N-Channel AlphaMOS 40 40 35 35 30 30 Current rating ID(A) Power Dissipation (W) TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 25 20 15 10 25 20 15 10 5 5 0 0 0 25 50 75 100 125 TCASE (°C) Figure 12: Power De-rating (Note F) 150 0 25 50 75 100 125 TCASE (°C) Figure 13: Current De-rating (Note F) 150 10000 TA=25°C Power (W) 1000 100 10 1 1E-05 0.001 0.1 10 1000 Pulse Width (s) Figure 14: Single Pulse Power Rating Junction-toAmbient (Note H) Zθ JA Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA 1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 40 RθJA=75°C/W 0.1 PD 0.01 Ton Single Pulse T 0.001 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 15: Normalized Maximum Transient Thermal Impedance (Note H) 5/6 www.freescale.net.cn AON7522E 30V N-Channel AlphaMOS Gate Charge Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC - DUT Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds Vds 90% + Vdd DUT Vgs VDC - Rg 10% Vgs Vgs t d(on) tr t d(off) t on tf toff Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L 2 E AR = 1/2 LIAR Vds BVDSS Vds Id + Vdd Vgs Vgs I AR VDC - Rg Id DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vds Isd Vgs Ig 6/6 Vgs L Isd + Vdd t rr dI/dt I RM Vdd VDC - IF Vds www.freescale.net.cn