AOT12N30/AOTF12N30 300V,11.5A N-Channel MOSFET General Description The AOT12N30/AOTF12N30 is fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability this parts can be adopted quickly into new and existing offline power supply designs.These parts are ideal for boost converters and synchronous rectifiers for consumer, telecom, industrial power supplies and LED backlighting. Features VDS ID (at VGS=10V) 350V@150℃ 11.5A RDS(ON) (at VGS=10V) < 0.42Ω D G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol AOT12N30 Drain-Source Voltage VDS 300 Gate-Source Voltage ±30 Continuous Drain Current VGS TC=25°C TC=100°C 1/6 ID 11.5* 7.3 IDM Avalanche Current C IAS Single pulsed avalanche energy G Peak diode recovery dv/dt TC=25°C Power Dissipation B Derate above 25oC Junction and Storage Temperature Range Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds Thermal Characteristics Parameter Maximum Junction-to-Ambient A,D EAS dv/dt Units V V 11.5 Pulsed Drain Current C Maximum Case-to-sink A Maximum Junction-to-Case AOTF12N30 7.3* A 3.8 A 430 5 132 36 mJ V/ns W 1 0.3 29 PD TJ, TSTG -55 to 150 W/ oC °C 300 °C TL Symbol RθJA RθCS RθJC AOT12N30 65 AOTF12N30 65 Units °C/W 0.5 0.95 -3.5 °C/W °C/W www.freescale.net.cn AOT12N30/AOTF12N30 300V,11.5A N-Channel MOSFET Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min ID=250µA, VGS=0V, TJ=25°C 300 Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage BVDSS /∆TJ Zero Gate Voltage Drain Current IDSS Zero Gate Voltage Drain Current IGSS Gate-Body leakage current VDS=0V, VGS=±30V VGS(th) Gate Threshold Voltage VDS=5V ID=250µA ID=250µA, VGS=0V, TJ=150°C 350 V ID=250µA, VGS=0V 0.29 V/ oC VDS=300V, VGS=0V 1 VDS=240V, TJ=125°C 10 ±100 3.4 4 4.5 nΑ V 0.42 Ω RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=6A 0.31 gFS Forward Transconductance VDS=40V, ID=6A 11 VSD Diode Forward Voltage IS=1A,VGS=0V IS Maximum Body-Diode Continuous Current ISM Maximum Body-Diode Pulsed Current DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance VGS=0V, VDS=25V, f=1MHz VGS=0V, VDS=0V, f=1MHz SWITCHING PARAMETERS Qg Total Gate Charge µA 0.74 S 1 V 11.5 A 29 A 500 632 790 pF 55 90 125 pF 3 7 11 pF 1.3 2.7 4.1 Ω 10 12.8 16 nC VGS=10V, VDS=240V, ID=12A 4.4 nC Gate Drain Charge 4.3 nC tD(on) Turn-On DelayTime 18 ns tr Turn-On Rise Time 31 ns tD(off) Turn-Off DelayTime tf trr Turn-Off Fall Time Qrr Body Diode Reverse Recovery Charge IF=12A,dI/dt=100A/µs,VDS=100V Qgs Gate Source Charge Qgd Body Diode Reverse Recovery Time VGS=10V, VDS=150V, ID=12A, RG=25Ω IF=12A,dI/dt=100A/µs,VDS=100V 36 ns 20 ns 130 170 205 1 1.3 1.6 ns µC A. The value of R θJA is measured with the device in a still air environment with T A =25°C. B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C, Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The R θJA is the sum of the thermal impedance from junction to case R θJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating. G. L=60mH, IAS=3.8A, VDD=150V, RG=25Ω, Starting TJ=25°C 2/6 www.freescale.net.cn AOT12N30/AOTF12N30 300V,11.5A N-Channel MOSFET TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 100 20 VDS=40V 10V -55°C 16 10 6.5V 125°C ID(A) ID (A) 12 8 6V 4 1 25°C VGS=5.5V 0 0.1 0 5 10 15 20 25 30 0 2 VDS (Volts) Fig 1: On-Region Characteristics 1.5 6 8 10 Normalized On-Resistance 3 1.2 RDS(ON) (Ω Ω) 4 VGS(Volts) Figure 2: Transfer Characteristics VGS=10V 0.9 0.6 0.3 VGS=10V ID=6A 2.5 2 1.5 1 0.5 0 0.0 0 5 10 15 20 -100 25 -50 0 50 100 150 200 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 1.2 1.0E+02 40 1.0E+00 IS (A) BVDSS (Normalized) 1.0E+01 1.1 1 125°C 1.0E-01 1.0E-02 25°C 0.9 1.0E-03 0.8 1.0E-04 -100 -50 0 50 100 150 200 TJ (° °C) Figure 5:Break Down vs. Junction Temparature 3/6 0.0 0.2 0.4 0.6 0.8 1.0 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) www.freescale.net.cn AOT12N30/AOTF12N30 300V,11.5A N-Channel MOSFET TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10000 15 VDS=240V ID=12A Ciss 1000 Capacitance (pF) VGS (Volts) 12 9 6 100 Coss 10 3 Crss 0 1 0 4 8 12 16 Qg (nC) Figure 7: Gate-Charge Characteristics 0.1 20 100 10 VDS (Volts) Figure 8: Capacitance Characteristics 100 100 10µs 10µs RDS(ON) limited RDS(ON) limited 10 100µs 1 1ms DC 10ms 0.1 100µs ID (Amps) 10 ID (Amps) 1 1 1ms DC 0.1 TJ(Max)=150°C TC=25°C 10ms 1s TJ(Max)=150°C TC=25°C 0.01 0.01 1 10 100 1000 VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area for AOT12N30 (Note F) 1 10 100 VDS (Volts) Figure 10: Maximum Forward Biased Safe Operating Area for AOTF12N30 (Note F) 1000 Current rating ID(A) 12 9 6 3 0 0 25 50 75 100 125 150 TCASE (°C) Figure 11: Current De-rating (Note B) 4/6 www.freescale.net.cn AOT12N30/AOTF12N30 300V,11.5A N-Channel MOSFET TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS Zθ JC Normalized Transient Thermal Resistance 10 1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC RθJC=0.95°C/W 0.1 PD 0.01 Ton Single Pulse T 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 12: Normalized Maximum Transient Thermal Impedance for AOT12N30 (Note F) 100 Zθ JC Normalized Transient Thermal Resistance 10 1 D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC RθJC=3.5°C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 PD 0.01 Single Pulse Ton T 0.001 0.00001 5/6 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 13: Normalized Maximum Transient Thermal Impedance for AOTF12N30 (Note F) 100 www.freescale.net.cn AOT12N30/AOTF12N30 300V,11.5A N-Channel MOSFET Gate Charge Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC DUT - Vgs Ig Charge Res istive Switching Test Circuit & Waveforms RL Vds Vds DUT Vgs + VDC 90% Vdd - Rg 10% Vgs Vgs t d(on) tr t d(off) t on tf t off Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L EAR= 1/2 LI Vds 2 AR BVDSS Vds Id + Vdd Vgs Vgs I AR VDC - Rg Id DUT Vgs Vgs Diode Recovery Tes t Circuit & Waveforms Qrr = - Idt Vds + DUT Vgs Vds - Isd Vgs Ig 6/6 L Isd + VDC - IF trr dI/dt IRM Vdd Vdd Vds www.freescale.net.cn