SHENZHENFREESCALE AOD3N50

AOD3N50/AOU3N50
500V, 3A N-Channel MOSFET
General Description
The AOD3N50 & AOU3N50 have been fabricated using an advanced high voltage MOSFET process that is
designed to deliver high levels of performance and robustness in popular AC-DC applications.
By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability these parts can be
adopted quickly into new and existing offline power supply designs.
Features
VDS
600V@150℃
ID (at VGS=10V)
2.8A
RDS(ON) (at VGS=10V)
< 3Ω
D
G
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
TC=25°C
Continuous Drain
CurrentB
Pulsed Drain Current
TC=100°C
C
Units
V
±30
V
2.8
ID
1.8
A
IDM
9
Avalanche Current C
IAR
2
A
Repetitive avalanche energy C
EAR
60
mJ
Single pulsed avalanche energy H
Peak diode recovery dv/dt
TC=25°C
Power Dissipation B Derate above 25oC
Junction and Storage Temperature Range
Maximum lead temperature for soldering
purpose, 1/8" from case for 5 seconds
EAS
dv/dt
120
5
57
mJ
V/ns
W
0.45
-50 to 150
W/ oC
°C
300
°C
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A,G
Maximum Case-to-sink A
Maximum Junction-to-CaseD,F
1/6
Maximum
500
PD
TJ, TSTG
TL
Symbol
RθJA
RθCS
RθJC
Typical
45
Maximum
55
Units
°C/W
1.8
0.5
2.2
°C/W
°C/W
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AOD3N50/AOU3N50
500V, 3A N-Channel MOSFET
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
ID=250µA, VGS=0V, TJ=25°C
500
Typ
Max
Units
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
BVDSS
/∆TJ
Zero Gate Voltage Drain Current
IDSS
Zero Gate Voltage Drain Current
IGSS
Gate-Body leakage current
VDS=0V, VGS=±30V
Gate Threshold Voltage
VDS=5V,ID=250µA
VGS(th)
ID=250µA, VGS=0V, TJ=150°C
600
ID=250µA, VGS=0V
VDS=500V, VGS=0V
0.54
V
V/ oC
1
VDS=400V, TJ=125°C
10
±100
3.5
µA
4.1
4.5
nΑ
V
3
Ω
1
V
RDS(ON)
Static Drain-Source On-Resistance
VGS=10V, ID=1.5A
2.3
gFS
Forward Transconductance
VDS=40V, ID=1.5A
2.8
VSD
Diode Forward Voltage
IS=1A,VGS=0V
0.78
IS
Maximum Body-Diode Continuous Current
3
A
ISM
Maximum Body-Diode Pulsed Current
9
A
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
VGS=0V, VDS=25V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
SWITCHING PARAMETERS
Qg
Total Gate Charge
VGS=10V, VDS=400V, ID=3A
S
221
276
331
pF
25
31.4
38
pF
2.1
2.6
4.1
pF
1.9
3.9
5.9
Ω
6.7
8.0
nC
Qgs
Gate Source Charge
1.7
3.0
nC
Qgd
Gate Drain Charge
2.7
3.2
nC
tD(on)
Turn-On DelayTime
11
13.2
ns
tr
Turn-On Rise Time
19
23.0
ns
tD(off)
Turn-Off DelayTime
20.5
24.6
ns
tf
trr
Turn-Off Fall Time
15
18.0
ns
Body Diode Reverse Recovery Time
IF=3A,dI/dt=100A/µs,VDS=100V
134
161
Qrr
Body Diode Reverse Recovery Charge IF=3A,dI/dt=100A/µs,VDS=100V
0.89
1.1
ns
µC
VGS=10V, VDS=250V, ID=3A,
RG=25Ω
A. The value of R θJA is measured with the device in a still air environment with T A =25°C.
B. The power dissipation PD is based on TJ(MAX)=150°C in a TO252 package, using junction-to-case thermal resistance, and is more useful in
setting the upper dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C.
D. The R θJA is the sum of the thermal impedance from junction to case R θJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of TJ(MAX)=150°C.
G.These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
H. L=60mH, IAS=2A, VDD=150V, RG=10Ω, Starting TJ=25°C
2/6
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AOD3N50/AOU3N50
500V, 3A N-Channel MOSFET
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
6
10
10V
6.5V
ID(A)
4
ID (A)
-55°C
VDS=40V
5
3
125°C
1
6V
2
25°C
1
VGS=5.5V
0
0.1
0
5
10
15
20
25
30
2
VDS (Volts)
Fig 1: On-Region Characteristics
6
8
10
VGS(Volts)
Figure 2: Transfer Characteristics
3
4.0
Normalized On-Resistance
5.0
RDS(ON) (Ω
Ω)
4
VGS=10V
3.0
2.0
1.0
2.5
VGS=10V
ID=1.5A
2
1.5
1
0.5
0
0
1
2
3
4
5
6
-100
7
-50
0
50
100
150
200
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage
1.2
1.0E+02
ID=30A
40
1
125°
25°C
1.0E-01
1.0E-02
0.9
25°
0.8
1.0E-03
1.0E-04
-100
3/6
125°C
1.0E+00
IS (A)
BVDSS (Normalized)
1.0E+01
1.1
-50
0
50
100
150
200
TJ (oC)
Figure 5: Break Down vs. Junction Temperature
0.2
0.4
0.6
0.8
1.0
VSD (Volts)
Figure 6: Body-Diode Characteristics
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AOD3N50/AOU3N50
500V, 3A N-Channel MOSFET
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
1000
15
Capacitance (pF)
VGS (Volts)
Ciss
VDS=400V
ID=3A
12
9
6
100
Coss
10
Crss
3
1
0
0
2
4
6
8
Qg (nC)
Figure 7: Gate-Charge Characteristics
0.1
10
10
1
10
VDS (Volts)
Figure 8: Capacitance Characteristics
100
800
10µs
RDS(ON)
limited
100µs
1ms
10ms
0.1s
0.1
600
Power (W)
ID (Amps)
1
TJ(Max)=150°C
TA=25°C
400
DC
200
TJ(Max)=150°C
TC=25°C
0
0.01
1
10
100
1000
0.0001
VDS (Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toCase (Note F)
Zθ JC Normalized Transient
Thermal Resistance
10
D=Ton/T
TJ,PK=TA+PDM.ZθJC.RθJC
RθJC=2.2°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
0.1
PD
Single Pulse
Ton
T
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
4/6
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AOD3N50/AOU3N50
500V, 3A N-Channel MOSFET
60
3.0
50
2.5
Current rating ID(A)
Power Dissipation (W)
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
40
30
20
10
2.0
1.5
1.0
0.5
0
0.0
0
25
50
75
100
125
TCASE (°C)
Figure 12: Power De-rating (Note B)
150
0
25
50
75
100
125
TCASE (°C)
Figure 13: Current De-rating (Note B)
150
400
TJ(Max)=150°C
TA=25°C
Power (W)
300
200
100
0
0.0001
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 14: Single Pulse Power Rating Junction-to-Case (Note G)
100
1000
Zθ JC Normalized Transient
Thermal Resistance
10
1
D=Ton/T
TJ,PK=TA+PDM.ZθJC.RθJC
RθJA=55°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
PD
0.01
Ton
Single Pulse
T
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 15: Normalized Maximum Transient Thermal Impedance (Note G)
5/6
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AOD3N50/AOU3N50
500V, 3A N-Channel MOSFET
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
+
VDC
-
VDC
DUT
Qgs
Vds
Qgd
-
Vgs
Ig
Charge
Res istive Switching Test Circuit & Waveforms
RL
Vds
Vds
DUT
Vgs
+
VDC
90%
Vdd
-
Rg
10%
Vgs
Vgs
t d(on)
tr
t d(off)
t on
tf
t off
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
EAR= 1/2 LI
Vds
2
AR
BVDSS
Vds
Id
+
Vgs
Vgs
VDC
-
Rg
Vdd
I AR
Id
DUT
Vgs
Vgs
Diode Recovery Tes t Circuit & Waveforms
Qrr = - Idt
Vds +
DUT
Vgs
Vds -
Isd
Vgs
Ig
6/6
L
Isd
+ Vdd
trr
dI/dt
IRM
Vdd
VDC
-
IF
Vds
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