AOD4N60/AOI4N60/AOU4N60 600V,4A N-Channel MOSFET General Description The AOD4N60 & AOI4N60 & AOU4N60 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability these parts can be adopted quickly into new and existing offline power supply designs. Features VDS 700V@150℃ ID (at VGS=10V) 4A RDS(ON) (at VGS=10V) < 2.3Ω D G S Absolute Maximum Ratings TA=25°C unless otherwise noted Symbol Parameter Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain CurrentB VGS TC=25°C TC=100°C Units V ±30 V 4 ID 2.6 A Pulsed Drain Current C IDM Avalanche Current C IAR 2.8 A Repetitive avalanche energy C EAR 118 mJ Single plused avalanche energy Peak diode recovery dv/dt TC=25°C Power Dissipation B Derate above 25oC EAS dv/dt 235 5 104 mJ V/ns W Junction and Storage Temperature Range Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds TJ, TSTG 0.83 -50 to 150 W/ oC °C 300 °C H Thermal Characteristics Parameter Maximum Junction-to-Ambient A,G Maximum Case-to-sink A Maximum Junction-to-CaseD,F 1/6 Maximum 600 14 PD TL Symbol RθJA RθCS RθJC Typical 43 Maximum 55 Units °C/W 1 0.5 1.2 °C/W °C/W www.freescale.net.cn AOD4N60/AOI4N60/AOU4N60 600V,4A N-Channel MOSFET Electrical Characteristics (TJ=25°C unless otherwise noted) Parameter Symbol Conditions Min ID=250µA, VGS=0V, TJ=25°C 600 Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage BVDSS /∆TJ Zero Gate Voltage Drain Current IDSS Zero Gate Voltage Drain Current IGSS Gate-Body leakage current VDS=0V, VGS=±30V VGS(th) Gate Threshold Voltage VDS=5V, ID=250µA ID=250µA, VGS=0V, TJ=150°C 700 ID=250µA, VGS=0V VDS=600V, VGS=0V 0.67 V V/ oC 1 VDS=480V, TJ=125°C 10 ±100 3.4 µA 4.1 4.5 nΑ V 2.3 Ω 1 V RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=2A 1.8 gFS Forward Transconductance VDS=40V, ID=2A 6 VSD Diode Forward Voltage IS=1A,VGS=0V IS Maximum Body-Diode Continuous Current 4 A ISM Maximum Body-Diode Pulsed Current 14 A DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance 0.76 420 VGS=0V, VDS=25V, f=1MHz VGS=0V, VDS=0V, f=1MHz SWITCHING PARAMETERS Total Gate Charge Qg VGS=10V, VDS=480V, ID=4A S 528 640 pF 35 53 70 pF 2.5 4.8 7 pF 1.2 2.5 3.8 Ω 9.5 12 14.5 nC 2.8 3.6 4.5 nC 2.2 4.4 6.6 nC Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time IF=4A,dI/dt=100A/µs,VDS=100V 150 190 230 Qrr Body Diode Reverse Recovery Charge IF=4A,dI/dt=100A/µs,VDS=100V 1.9 2.4 3 17 VGS=10V, VDS=300V, ID=4A, RG=25Ω ns 26 ns 34 ns 21 ns ns µC A. The value of R θJA is measured with the device in a still air environment with T A =25°C. B. The power dissipation PD is based on TJ(MAX)=150°C in a TO252 package, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. D. The R θJA is the sum of the thermal impedance from junction to case R θJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=150°C. G.These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. H. L=60mH, IAS=2.8A, VDD=150V, RG=10Ω, Starting TJ=25°C 2/6 www.freescale.net.cn AOD4N60/AOI4N60/AOU4N60 600V,4A N-Channel MOSFET TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 8 100 10V 7 VDS=40V -55°C 6 6.5V 10 ID(A) ID (A) 5 6V 4 3 125°C 1 2 VGS=5.5V 25°C 1 0 0.1 0 5 10 15 20 25 30 2 4 VDS (Volts) Fig 1: On-Region Characteristics 3 4.0 2.5 RDS(ON) (Ω Ω) Normalized On-Resistance 4.5 3.5 VGS=10V 3.0 2.5 2.0 1.5 6 8 10 VGS(Volts) Figure 2: Transfer Characteristics VGS=10V ID=2A 2 1.5 1 0.5 0 1.0 0 2 -100 4 6 8 10 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage -50 0 50 100 150 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 200 1.0E+02 1.2 ID=30A 1.0E+00 1 125° 1.0E-01 25°C 1.0E-02 0.9 25° 0.8 1.0E-03 1.0E-04 -100 3/6 125°C 40 IS (A) BVDSS (Normalized) 1.0E+01 1.1 -50 0 50 100 150 200 TJ (oC) Figure 5: Break Down vs. Junction Temperature 0.2 0.4 0.6 0.8 VSD (Volts) Figure 6: Body-Diode Characteristics 1.0 www.freescale.net.cn AOD4N60/AOI4N60/AOU4N60 600V,4A N-Channel MOSFET TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10000 15 VDS=480V ID=2A Ciss 1000 Capacitance (pF) VGS (Volts) 12 9 6 Coss 100 10 3 Crss 0 1 0 3 6 9 12 15 Qg (nC) Figure 7: Gate-Charge Characteristics 0.1 18 100 10 VDS (Volts) Figure 8: Capacitance Characteristics 100 800 10 RDS(ON) 1 100µs 1ms DC TJ(Max)=150°C TC=25°C 600 10µs Power (W) ID (Amps) 1 400 10ms 0.1 200 TJ(Max)=150°C 0.01 0 1 10 100 1000 VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toCase (Note F) Zθ JC Normalized Transient Thermal Resistance 10 1 D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC RθJC=1.2°C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 PD 0.01 Single Pulse Ton T 0.001 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) 4/6 www.freescale.net.cn AOD4N60/AOI4N60/AOU4N60 600V,4A N-Channel MOSFET TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 5 100 4 Current rating ID(A) Power Dissipation (W) 120 80 60 40 3 2 1 20 0 0 0 25 50 75 100 125 150 0 TCASE (°C) Figure 12: Power De-rating (Note B) 25 50 75 100 125 TCASE (°C) Figure 13: Current De-rating (Note B) 150 500 TJ(Max)=150°C TA=25°C Power (W) 400 300 200 100 0 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 14: Single Pulse Power Rating Junction-to-Ambient (Note G) 100 1000 Zθ JA Normalized Transient Thermal Resistance 10 1 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=55°C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 0.01 PD 0.001 Ton Single Pulse T 0.0001 0.0001 0.001 0.01 0.1 1 10 100 1000 10000 Pulse Width (s) Figure 15: Normalized Maximum Transient Thermal Impedance (Note G) 5/6 www.freescale.net.cn AOD4N60/AOI4N60/AOU4N60 600V,4A N-Channel MOSFET Gate Charge Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC DUT - Vgs Ig Charge Res istive Switching Test Circuit & Waveforms RL Vds Vds DUT Vgs + VDC 90% Vdd - Rg 10% Vgs Vgs t d(on) tr t d(off) t on tf t off Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L EAR= 1/2 LI Vds 2 AR BVDSS Vds Id + Vgs Vgs VDC - Rg Vdd I AR Id DUT Vgs Vgs Diode Recovery Tes t Circuit & Waveforms Qrr = - Idt Vds + DUT Vgs Vds - Isd Vgs Ig 6/6 L Isd + Vdd trr dI/dt IRM Vdd VDC - IF Vds www.freescale.net.cn