AOT20N25 250V,20A N-Channel MOSFET General Description The AOT20N25 is fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability this device can be adopted quickly into new and existing offline power supply designs.This device is ideal for boost converters and synchronous rectifiers for consumer, telecom, industrial power supplies and LED backlighting. Features VDS ID (at VGS=10V) 300V@150℃ 20A RDS(ON) (at VGS=10V) < 0.17Ω D G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current VGS TC=25°C TC=100°C Units V ±30 V 20 ID 14 A Pulsed Drain Current C IDM Avalanche Current C IAS 4.5 A Single pulsed avalanche energy G Peak diode recovery dv/dt TC=25°C Power Dissipation B Derate above 25oC Junction and Storage Temperature Range Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds Thermal Characteristics Parameter Maximum Junction-to-Ambient A,D EAS dv/dt 608 5 208 mJ V/ns W 1.7 -55 to 150 W/ oC °C 300 °C AOT20N25 65 Units °C/W 0.5 0.6 °C/W °C/W Maximum Case-to-sink A Maximum Junction-to-Case 1/5 AOT20N25 250 51 PD TJ, TSTG TL Symbol RθJA RθCS RθJC www.freescale.net.cn AOT20N25 250V,20A N-Channel MOSFET Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min ID=250µA, VGS=0V, TJ=25°C 250 Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage BVDSS /∆TJ Zero Gate Voltage Drain Current IDSS Zero Gate Voltage Drain Current IGSS Gate-Body leakage current VDS=0V, VGS=±30V VGS(th) Gate Threshold Voltage VDS=5V, ID=250µA ID=250µA, VGS=0V, TJ=150°C 300 V ID=250µA, VGS=0V 0.25 V/ oC VDS=250V, VGS=0V 1 VDS=200V, TJ=125°C 10 ±100 3.2 3.8 4.5 nΑ V 0.17 Ω RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=10A 0.14 gFS Forward Transconductance VDS=40V, ID=10A 16 VSD Diode Forward Voltage IS=1A,VGS=0V IS ISM 0.72 S 1 V Maximum Body-Diode Continuous Current 20 A Maximum Body-Diode Pulsed Current 51 A DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg µA Gate resistance VGS=0V, VDS=25V, f=1MHz VGS=0V, VDS=0V, f=1MHz SWITCHING PARAMETERS Qg Total Gate Charge Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf trr Turn-Off Fall Time Qrr VGS=10V, VDS=200V, ID=20A VGS=10V, VDS=125V, ID=20A, RG=25Ω 1.9 1028 pF 167 pF 11 pF 3.9 5.9 Ω 20 25 nC 5.7 nC 8 nC 27 ns 31 ns 70 ns 25 ns IF=20A,dI/dt=100A/µs,VDS=100V 179 Body Diode Reverse Recovery Charge IF=20A,dI/dt=100A/µs,VDS=100V 1.6 ns µC Body Diode Reverse Recovery Time A. The value of R θJA is measured with the device in a still air environment with T A =25°C. B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C, Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The R θJA is the sum of the thermal impedance from junction to case R θJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating. G. L=60mH, IAS=4.5A, VDD=150V, RG=25Ω, Starting TJ=25°C 2/5 www.freescale.net.cn AOT20N25 250V,20A N-Channel MOSFET TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 100 30 VDS=40V 10V 25 -55°C 6.5V ID(A) ID (A) 125°C 10 20 15 6V 10 1 25°C 5 VGS=5.5V 0 0.1 0 5 10 15 20 25 30 2 4 6 8 VGS(Volts) Figure 2: Transfer Characteristics VDS (Volts) Fig 1: On-Region Characteristics 0.30 Normalized On-Resistance 3 0.25 VGS=10V RDS(ON) (Ω Ω) 10 0.20 0.15 0.10 0.05 VGS=10V ID=10A 2.5 2 1.5 1 0.5 0 0.00 0 5 10 15 20 -100 25 -50 0 50 100 150 200 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 1.2 1E+02 40 125°C 1E+00 IS (A) BVDSS (Normalized) 1E+01 1.1 1 1E-01 25°C 1E-02 0.9 1E-03 0.8 1E-04 -100 50 100 150 200 TJ (° °C) Figure 5:Break Down vs. Junction Temparature 3/5 -50 0 0.2 0.4 0.6 0.8 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) 1.0 www.freescale.net.cn AOT20N25 250V,20A N-Channel MOSFET TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10000 15 VDS=200V ID=20A Ciss 1000 Capacitance (pF) VGS (Volts) 12 9 6 100 Coss 10 Crss 3 1 0 0 5 10 15 20 25 30 Qg (nC) Figure 7: Gate-Charge Characteristics 0.1 35 1 10 VDS (Volts) Figure 8: Capacitance Characteristics 100 100 25 20 10 ID (Amps) Current rating ID(A) 10µs 15 10 RDS(ON) limited 100µs 1ms DC 1 10ms 0.1 TJ(Max)=150°C 5 0.01 0 0 25 50 75 100 125 TCASE (°C) Figure 9: Current De-rating (Note B) 150 0.1 1 10 100 1000 VDS (Volts) Figure 10: Maximum Forward Biased Safe Operating Area for AOT20N25 (Note F) Zθ JC Normalized Transient Thermal Resistance 10 1 D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC RθJC=0.6°C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 PD 0.01 Ton Single Pulse T 0.001 1E-06 1E-05 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance for AOT20N25 (Note F) 4/5 www.freescale.net.cn AOT20N25 250V,20A N-Channel MOSFET Gate Charge Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC DUT - Vgs Ig Charge Res istive Switching Test Circuit & Waveforms RL Vds Vds DUT Vgs + VDC 90% Vdd - Rg 10% Vgs Vgs t d(on) tr t d(off) t on tf t off Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L EAR= 1/2 LI Vds 2 AR BVDSS Vds Id + Vdd Vgs Vgs I AR VDC - Rg Id DUT Vgs Vgs Diode Recovery Tes t Circuit & Waveforms Qrr = - Idt Vds + DUT Vgs Vds - Isd Vgs Ig 5/5 L Isd + VDC - IF trr dI/dt IRM Vdd Vdd Vds www.freescale.net.cn