AOT412/AOB412L 100V N-Channel MOSFET General Description The AOT412 & AOB412L are fabricated with SDMOSTM trench technology that combines excellent RDS(ON) with low gate charge & low Qrr.The result is outstanding efficiency with controlled switching behavior. This universal technology is well suited for PWM, load switching and general purpose applications. Features VDS 100V ID (at VGS=10V) 60A RDS(ON) (at VGS=10V) < 15.8mΩ RDS(ON) (at VGS = 7V) < 19.4mΩ TO-263 D2PAK TO220 D D D G S D G G Absolute Maximum Ratings TA=25°C unless otherwise noted Symbol Parameter Drain-Source Voltage VDS Gate-Source Voltage VGS TC=25°C Continuous Drain Current Pulsed Drain Current C Avalanche Current C Avalanche energy L=0.1mH C TC=25°C Power Dissipation B TC=100°C Power Dissipation A TA=70°C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case 1/7 Steady-State Steady-State A IAS,IAR 47 A EAS,EAR 110 mJ 150 W 75 2.6 RθJA RθJC W 1.7 TJ, TSTG Symbol t ≤ 10s A 8.2 PDSM Junction and Storage Temperature Range V 6.6 PD TA=25°C ±25 44 IDSM TA=70°C Units V 140 IDM TA=25°C Continuous Drain Current Maximum 100 60 ID TC=100°C S S -55 to 175 Typ 15 40 0.7 °C Max 18 48 1 Units °C/W °C/W °C/W www.freescale.net.cn AOT412/AOB412L 100V N-Channel MOSFET Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=250µA, VGS=0V 100 Typ Max V VDS=100V, VGS=0V 10 IDSS Zero Gate Voltage Drain Current IGSS Gate-Body leakage current VDS=0V, VGS= ±25V VGS(th) Gate Threshold Voltage VDS=VGS ,ID=250µA 2.6 ID(ON) On state drain current VGS=10V, VDS=5V 140 Units TJ=55°C 50 µA 100 nA 3.2 3.8 V 13.2 15.8 25 30 VGS=7V, ID=20A TO220 15.5 19.4 VGS=10V, ID=20A TO263 12.9 15.5 15.2 30 19.1 Forward Transconductance VGS=7V, ID=20A TO263 VDS=5V, ID=20A VSD Diode Forward Voltage IS=1A,VGS=0V 0.65 IS Maximum Body-Diode Continuous Current VGS=10V, ID=20A TO220 RDS(ON) gFS Static Drain-Source On-Resistance TJ=125°C DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance VGS=0V, VDS=50V, f=1MHz VGS=0V, VDS=0V, f=1MHz SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qgs Gate Source Charge VGS=10V, VDS=50V, ID=20A A mΩ mΩ mΩ mΩ S 1 V 60 A 2150 2680 3220 pF 180 260 340 pF 60 100 140 pF 0.5 1 1.5 Ω 36 45 54 nC 14 17 20 nC 9 15 21 nC Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time IF=20A, dI/dt=500A/µs 15 22 29 Qrr Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs 67 96 125 VGS=10V, VDS=50V, RL=2Ω, RGEN=3Ω 19 ns 16 ns 27 ns 10 ns ns nC A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allow s it. B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=175°C. The SOA curve provides a single pulse ratin g. G. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. 2/7 www.freescale.net.cn AOT412/AOB412L 100V N-Channel MOSFET TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 100 140 VDS=5V 10V 120 7.5V 7V 80 6.5V 60 80 ID(A) ID (A) 100 60 40 6V 40 0 0 0 1 2 3 4 VDS (Volts) Fig 1: On-Region Characteristics (Note E) 0 5 2 4 6 8 10 VGS(Volts) Figure 2: Transfer Characteristics (Note E) 17 Normalized On-Resistance 2.6 16 RDS(ON) (mΩ ) 25°C 125°C 20 VGS=5.5V 20 VGS=7V 15 14 VGS=10V 13 12 2.4 VGS=10V ID=20A 2.2 2 17 5 2 10 VGS=7V 1.8 1.6 1.4 1.2 ID=20A 1 0.8 11 0 5 10 15 20 25 0 30 25 50 75 100 125 150 175 200 Temperature (°C) 0 Figure 4: On-Resistance vs. Junction Temperature 18 (Note E) ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 33 1.0E+02 ID=20A 1.0E+01 40 125°C 23 18 25°C 1.0E-01 1.0E-02 25°C 13 1.0E-03 1.0E-04 8 5 6 7 8 9 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) 3/7 125°C 1.0E+00 IS (A) RDS(ON) (mΩ ) 28 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) www.freescale.net.cn AOT412/AOB412L 100V N-Channel MOSFET TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 3600 10 VDS=50V ID=20A 3200 Ciss 2800 Capacitance (pF) VGS (Volts) 8 6 4 2400 2000 1600 1200 800 2 Coss Crss 400 0 0 0 10 20 30 40 0 50 Qg (nC) Figure 7: Gate-Charge Characteristics 10µs RDS(ON) limited 4000 10µs 100µs Power (W) ID (Amps) 100.0 1ms DC 10ms 1.0 TJ(Max)=175°C TC=25°C 0.1 TJ(Max)=175°C TC=25°C 17 5 2 10 3000 2000 0 0.01 0.1 1 10 VDS (Volts) 100 1000 1E-05 0.0001 0.001 0.01 0.1 1 0 10 Pulse Width (s) 18 Figure 10: Single Pulse Power Rating Junction-toCase (Note F) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) Zθ JC Normalized Transient Thermal Resistance 100 1000 0.0 10 40 60 80 VDS (Volts) Figure 8: Capacitance Characteristics 5000 1000.0 10.0 20 D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse RθJC=1°C/W 40 1 PD 0.1 Ton Single Pulse T 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) 4/7 www.freescale.net.cn AOT412/AOB412L 100V N-Channel MOSFET TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 160 100 IAR (A) Peak Avalanche Current TA=25°C 140 Power Dissipation (W) TA=100°C 10 TA=150°C TA=125°C 1 120 100 80 60 40 20 0 0.1 0 1 10 100 1000 Time in avalanche, tA (µ µs) Figure 12: Single Pulse Avalanche capability (Note C) 25 50 75 100 150 175 1000 70 60 TA=25°C 50 Power (W) Current rating ID(A) 125 TCASE (°C) Figure 13: Power De-rating (Note F) 40 30 20 100 17 5 2 10 10 10 0 1 0 25 50 75 100 125 150 175 0.00001 0.001 0.1 10 1000 0 TCASE (°C) Figure 14: Current De-rating (Note F) Pulse Width (s) 18 Figure 15: Single Pulse Power Rating Junction-toAmbient (Note G) Zθ JA Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA 1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 40 RθJA=48°C/W 0.1 PD 0.01 Ton Single Pulse 0.001 0.00001 0.0001 0.001 0.01 0.1 1 T 10 100 1000 Pulse Width (s) Figure 16: Normalized Maximum Transient Thermal Impedance (Note G) 5/7 www.freescale.net.cn AOT412/AOB412L 100V N-Channel MOSFET TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 50 30 2 125ºC di/dt=800A/µs 125ºC 180 25 40 1.5 30 25ºC 100 20 Qrr 60 Irm (A) 140 trr (ns) Qrr (nC) 20 125ºC 25ºC trr 15 1 10 25ºC S 10 Irm 125ºC 25ºC 20 0 0 5 10 15 20 25 0 30 0 0 IS (A) Figure 17: Diode Reverse Recovery Charge and Peak Current vs. Conduction Current Is=20A 20 25 30 2 Is=20A 125ºC 1.5 30 100 80 25ºC Qrr 20 trr (ns) 25 120 Irm (A) Qrr (nC) 15 30 40 25ºC 20 trr 1 15 25ºC 10 125ºC 60 S 0.5 10 40 5 Irm 25ºC 125ºC 20 0 0 200 400 600 800 1000 di/dt (A/µ µs) Figure 19: Diode Reverse Recovery Charge and Peak Current vs. di/dt 6/7 10 35 125ºC 140 5 IS (A) Figure 18: Diode Reverse Recovery Time and Softness Factor vs. Conduction Current 50 180 160 0.5 5 S di/dt=800A/µs S 220 0 0 0 200 400 600 800 1000 di/dt (A/µ µs) Figure 20: Diode Reverse Recovery Time and Softness Factor vs. di/dt www.freescale.net.cn AOT412/AOB412L 100V N-Channel MOSFET Gate Charge Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC - DUT Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds Vds 90% + Vdd DUT Vgs VDC - Rg 10% Vgs Vgs t d(on) tr t d(off) t on tf toff Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L 2 E AR = 1/2 LIAR Vds BVDSS Vds Id + Vdd Vgs Vgs I AR VDC - Rg Id DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vds Isd Vgs Ig 7/7 Vgs L Isd + Vdd t rr dI/dt I RM Vdd VDC - IF Vds www.freescale.net.cn