2SC4467 Pb Free Plating Product ® Pb 2SC4467 Silicon NPN Triple Diffused Planar Transistor DESCRIPTION ·With TO-3PN package ·Complement to type 2SA1694 APPLICATIONS ·Audio and general purpose PINNING PIN 3 DESCRIPTION 2 1 1 Base 2 Collector;connected to mounting base 3 Emitter Fig.1 simplified outline (TO-3PN) and symbol ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 160 V VCEO Collector-emitter voltage Open base 120 V VEBO Emitter-base voltage Open collector 6 V IC Collector current 8 A IB Base current 3 A PC Collector power dissipation 80 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ Tc=25℃ Page 1/2 © 2006 Thinki Semiconductor Co.,Ltd. http://www.thinkisemi.com/ 2SC4467 ® CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX V(BR)CEO Collector-emitter breakdown voltage IC=50mA ;IB=0 VCEsat Collector-emitter saturation voltage IC=3A ;IB=0.3A 1.5 V ICBO Collector cut-off current VCB=160V; IE=0 10 µA IEBO Emitter cut-off current VEB=6V; IC=0 10 µA hFE DC current gain IC=3A ; VCE=4V COB Output capacitance IE=0 ; VCB=10V,f=1MHz 200 pF fT Transition frequency IC=0.5A ; VCE=12V 20 MHz 0.13 As 3.50 As 0.32 As 120 UNIT V 50 180 Switching times ton Turn-on time ts Storage time tf Fall time IC=4A;RL=10C IB1=- IB2=0.4A VCC=40V hFE Classifications O P Y 50-100 70-140 90-180 Mechanical Dimensions TO-3PN Dimensions in Millimeters Page 2/2 © 2006 Thinki Semiconductor Co.,Ltd. http://www.thinkisemi.com/