ISC 2SA1493

Inchange Semiconductor
Product Specification
2SA1493
Silicon PNP Power Transistors
·
DESCRIPTION
·With MT-200 package
·Complement to type 2SC3857
APPLICATIONS
·Audio and general purpose
PINNING(see Fig.2)
PIN
DESCRIPTION
1
Base
2
Collector;connected to
mounting base
3
Emitter
Fig.1 simplified outline (MT-200) and symbol
Absolute maximum ratings (Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
-200
V
VCEO
Collector-emitter voltage
Open base
-200
V
VEBO
Emitter-base voltage
Open collector
-6
V
IC
Collector current
-15
A
IB
Base current
-5
A
PC
Collectorl power dissipation
150
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
B
TC=25℃
Inchange Semiconductor
Product Specification
2SA1493
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
V(BR)CEO
Collector-emitter breakdown voltage
IC=-50mA; IB=0
VCEsat
Collector-emitter saturation voltage
IC=-10 A;IB=-1 A
-3.0
V
ICBO
Collector cut-off current
VCB=-200V; IE=0
-100
μA
IEBO
Emitter cut-off current
VEB=-6V; IC=0
-100
μA
hFE
DC current gain
IC=-5A ; VCE=-4V
fT
Transition frequency
IC=-0.5A ; VCE=-12V
20
MHz
COB
Output capacitance
IE=0; VCB=-10V;f=1MHz
400
pF
0.30
μs
0.90
μs
0.20
μs
-200
UNIT
V
50
180
Switching times
‹
ton
Turn-on time
ts
Storage time
tf
Fall time
IC=-5A;RL=-12Ω
IB1=-IB2=-0.5A
VCC=-60V
hFE classifications
O
P
Y
50-100
70-140
90-180
2
Inchange Semiconductor
Product Specification
2SA1493
Silicon PNP Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions
3
Inchange Semiconductor
Product Specification
2SA1493
Silicon PNP Power Transistors
4