Transistor IC Transistors DIP SMDType Type SMD Type Product specification 2N5551 Features Switching and amplification in high voltage Applications such as telephony Low current(max. 600mA) High voltage(max.180V) Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO 180 V Collector-emitter voltage VCEO 160 V Emitter-base voltage VEBO 6 V IC 0.6 A Pc 625 mW TJ, Tstg -55 to +150 Collector current-continuous Collector Power Dissipation Junction and storage temperature Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Collector-base breakdown voltage VCBO IC = 100 ìA, IE = 0 180 V Collector-emitter breakdown voltage * VCEO IC = 1.0 mA, IB = 0 160 V Emitter-base breakdown voltage VEBO IE = 10 ìA, IC = 0 6 V Collector cutoff current ICBO VCB = 120 V, IE = 0 Emitter cutoff current IEBO DC current gain * hFE Collector-emitter saturation voltage * Base-emitter saturation voltage * Transiston frequency VCE(sat) VBE(sat) fT VEB = 4.0 V, IC = 0 IC = 1.0 mA, VCE = 5 V 80 IC = 10 mA, VCE = 5 V 80 IC = 50 mA, VCE = 5 V 30 50 nA 50 nA 250 IC = 10 mA, IB = 1 mA 0.15 IC = 50 mA, IB = 5mA 0.2 IC = 10 mA, IB = 1 mA 1.0 IC =50 mA, IB = 5 mA 1.0 VCE=10V,IC=10mA,f=100MHz 100 300 V V MHz Collector output capacitance Cob VCB=10V,IE=0,f=1MHz 6 pF Input capacitance Cib VBE=0.5V,IC=0,f=1MHz 20 pF Noise figure NF VCE=5V,Ic=0.25mA,f=10Hz to 15.7KHz,Rs=1k 8 dB * Pulse Test: Pulse Width = 300 http://www.twtysemi.com s, Duty Cycle=2.0%. [email protected] 4008-318-123 1 of 1