Product specification 2N7000 SOT-23 ■ Features Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 ● High density cell design for low RDS(ON) +0.1 1.3-0.1 +0.1 2.4-0.1 ● Voltage controlled small signal switch 0.4 3 1 ● High saturation current capability 0.55 ● Rugged and reliable 2 +0.1 0.95-0.1 +0.1 1.9-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01 1.Base +0.1 0.38-0.1 0-0.1 1.Gate 2.Emitter 2.Soruce 3.Drain 3.collector ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Drain-Source voltage VDS 60 V Gate-Source Voltage VGS ±20 V Drain Current - Continuous Power dissipation 200 ID - Pulsed Note(1) mA 500 @ TA = 25℃ Operating and storage junction temperature range PD 0.4 W TJ, Tstg -55 to +150 ℃ Notes: 1. Pulse width limited by maximum junction temperature. ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test conditons Min Drain-source breakdown voltage V(BR)DSS VGS=0 V, ID=10 μA 60 VGS(th) VDS=VGS, ID=1mA 0.8 lGSS VDS=0 V, VGS=±20 V Gate-threshold voltage Gate-body leakage Zero gate voltage drain current IDSS Typ Max 2.1 3 V VDS=48 V, VGS=0 V TC = 125℃ On-state drain current VGS=4.5 V, VDS=10 V ID(ON) Drain-source on-resistance RDS(on) Forward tran conductance gts Input capacitance Ciss Output capacitance Coss 0.35 ±100 nA 1 μA 1000 μA 0.075 A VGS=10 V, ID=500 mA 5 VGS=4.5 V, ID=75 mA 5.3 VDS=10 V, ID=200 mA 100 VDS=25 V, VGS=0 V, f=1 MHz Unit Ω ms 22 60 11 25 2 pF Reverse transfer capacitance Crss Turn-on Time td(on) VDD = 15 V, RL = 25 Ω 10 5 ns Turn-off Time td(off) ID =0.5 A, VGEN = 10 V, RG = 25Ω 10 ns ■ Marking Marking 702 http://www.twtysemi.com [email protected] 4008-318-123 1 of 1