IC Transistor MOSFET IC DIP SMD Type DIP SMDType Type Type Product specification KN0606L TO-92 Unit: mm +0.25 4.58 –0.15 ■ Features 4.58 ±0.20 Low On-Resistance: 1.2 W Low Threshold: <1.6 V Low Input Capacitance: 35 pF Fast Switching Speed: 9 ns Low Input and Output Leakage 0.46 ±0.10 14.47 ±0.40 D D D D D D 1.27TYP [1.27 ±0.20] 1 2 3 3.60 0.38 –0.05 ±0.20 1.Base 1. 1 Gate Gate (0.25) +0.10 0.38 –0.05 1.02 ±0.10 3.86MAX G +0.10 1.27TYP [1.27 ±0.20] (R2.29) 2.Emitter 2. 2 Source Drain 3. Drain 3.collector 3 Source S ■ Absolute Maximum Ratings Ta = 25℃ Symbol Rating Drain-Source Voltage VDS 60 Gate-Source Voltage VGS "30 Parameter Continuous Drain Current (TJ = 150_C) Pulsed Drain TA= 25_C TA= 100_C Currenta Power Dissipation TA= 100_C Thermal Resistance, Junction-to-Ambient Operating Junction and Storage Temperature Range http://www.twtysemi.com V 0.33 ID IDM TA= 25_C Unit 0.21 A 1.6 0.8 PD 0.32 RthJA 156 TJ, Tstg –55 to 150 [email protected] W _C/W _C 4008-318-123 1 of 2 IC Transistor MOSFET IC DIP SMD Type DIP SMDType Type Type Product specification KN0606L ■ Electrical Characteristics Ta = 25℃ Limits Parameter Symbol Test Conditions Min Drain-Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 10 mA 60 VDS = VGS, ID = 0.25 mA Gate-Threshold Voltage Gate-Body Leakage VGS(th) IGSS Zero Gate VoltageDrain Current IDSS On-State Drain Currentb ID(on) VDS = VGS, ID = 1 mA 0.8 10 500 TJ = 125_C A 4 2 3.8 2.3 VGS = 10 V, ID = 0.5 A 1.2 3 2.3 6 TJ = 125_C VGS = 10 V, ID = 1 A VDS = 10 V, ID = 0.5 A Common Source Output Conductanceb gos VDS = 10 V, ID = 0.1 A Input Capacitance Ciss Coss Crss Turn-On Time tON Turn-Off Time tOFF http://www.twtysemi.com VDS = 25 V, VGS = 0 V, f = 1 MHz VDD = 25 V, RL = 23 W ID ^ 1 A, VGEN = 10 V RG = 25 W [email protected] W 1.3 TC = 125_C gfs mA m 2.4 VGS = 5 V, ID = 0.3 A Forward Transconductanceb nA 0.5 1.5 TJ = 125_C Reverse Transfer Capacitance V 2 "100 VGS = 4.5 V, ID = 0.25 A Output Capacitance 1.7 VDS = 60 V, VGS = 0 V VDS = 10 V, VGS = 10 V Unit 70 VDS = 0 V, VGS = "30 V VDS = 10 V, VGS = 4.5 V rDS(on) Max 1.6 VGS = 3.5 V, ID = 0.04 A Drain-Source On-Resistanceb Typ a 2.5 170 350 mS 0.3 35 50 25 40 6 10 8 10 9 10 4008-318-123 pF ns 2of 2