Product specification 2SC4115 Features Low VCE(sat):VCE(sat) = 0.2V (Typ.) IC / IB = 2A / 0.1A NPN silicon transistor Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit collector-base voltage VCBO 40 V collector-emitter voltage VCEO 20 V emitter-base voltage VEBO 6 V IC 3 A ICP *1 5 A W collector current CollectorPower Dissipation PC 0.3 Junotion Temperature TJ 150 storage Temperature Tstg -55 to 150 *1 Single pulse pw=10ms Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Collector-base breakdown voltage VCBO IC=50ìA 40 V collector-emitter breakdown voltage VCEO IC=1mA 20 V Emitter-base breakdown voltage VEBO IE=50ìA 6 V Collector cutoff current ICBO VCB=30V 0.1 Emitter outoff current IEBO VEB=5V 0.1 Collector emitter saturation voltage VCE(sat) IC/IB=2A/0.1A 0.2 120 0.5 A A V DC current gain hFE VCE=2V,IC=0.1A 560 Output capacitance Cob VCB=10V,IE=0A,f=1MHz 25 pF Transition frequency fT VCE=2V.IE=0.5A,f=100MHz 290 MHz hFE Classification Rank hFE Q 120 R 270 http://www.twtysemi.com 180 S 390 270 560 [email protected] 4008-318-123 1 of 1