TYSEMI 2SC4115

Product specification
2SC4115
Features
Low VCE(sat):VCE(sat) = 0.2V (Typ.)
IC / IB = 2A / 0.1A
NPN silicon transistor
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
collector-base voltage
VCBO
40
V
collector-emitter voltage
VCEO
20
V
emitter-base voltage
VEBO
6
V
IC
3
A
ICP *1
5
A
W
collector current
CollectorPower Dissipation
PC
0.3
Junotion Temperature
TJ
150
storage Temperature
Tstg
-55 to 150
*1 Single pulse pw=10ms
Electrical Characteristics Ta = 25
Parameter
Symbol
Testconditons
Min
Typ
Max
Unit
Collector-base breakdown voltage
VCBO
IC=50ìA
40
V
collector-emitter breakdown voltage
VCEO
IC=1mA
20
V
Emitter-base breakdown voltage
VEBO
IE=50ìA
6
V
Collector cutoff current
ICBO
VCB=30V
0.1
Emitter outoff current
IEBO
VEB=5V
0.1
Collector emitter saturation voltage
VCE(sat)
IC/IB=2A/0.1A
0.2
120
0.5
A
A
V
DC current gain
hFE
VCE=2V,IC=0.1A
560
Output capacitance
Cob
VCB=10V,IE=0A,f=1MHz
25
pF
Transition frequency
fT
VCE=2V.IE=0.5A,f=100MHz
290
MHz
hFE Classification
Rank
hFE
Q
120
R
270
http://www.twtysemi.com
180
S
390
270
560
[email protected]
4008-318-123
1 of 1