TYSEMI 2SA1759

Transistors
SMD Type
Product specification
2SA1759
Features
High breakdown voltage
Low saturation voltage
High switching speed
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
Collector-emitter Voltage
VCEO
-400
V
Collector-base Voltage
VCBO
-400
V
Emitter-base Voltage
VEBO
-7
V
Collector current
IC
-0.1
A
Collector current (pulse) *1
ICP
-0.2
A
Collector power dissipation
PC
0.5
W
2 *2
Jumction temperature
Tj
150
Storage temperature
Tstg
-55 to +150
* Pw=100ms
*2 When mounted on a 40X40X0.7 mm ceramic board
http://www.twtysemi.com
[email protected]
4008-318-123
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Transistors
SMD Type
Product specification
2SA1759
Electrical Characteristics Ta = 25
Parameter
Symbol
Testconditons
Min
Typ
Max
Unit
Collector-emitter breakdown voltage
BVCEO
IC = -1mA
-400
V
Collector-base breakdown voltae
BVCBO
IC = -50 A
-400
V
Emitter-base breakdown voltage
-7
V
BVEBO
IE = -50 A
Collector cutoff current
ICBO
VCB = -400V
-10
ìA
Emitter cutoff current
IEBO
VEB = -6V
-10
ìA
-0.5
V
-1.2
V
Collector-emitter saturation voltage
VCE(sat) IC = -20mA , IB = -2mA
Base-emitter saturation voltage
VBE(sat) IC = -20mA , IB = -2mA
DC current transfer ratio
hFE
-0.2
VCE = -10V , IC = -10mA
82
180
Transition frequency
fT
VCE = -10V , IE = 10mA , f = 5MHz
200
MHz
Output Capacitance
Cob
VCB = -10V , IE = 0A , f = 1MHz
36
pF
Turn-on time
ton
IC = -100mA , RL = 1.5KÙ
0.7
ìs
Storage time
tstg
IB1 = -IB2 = -10mA
1.8
ìs
Fall time
toff
VCC=-150V
1
ìs
Marking
Marking
AHP
http://www.twtysemi.com
[email protected]
4008-318-123
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