Transistors SMD Type Product specification 2SA1759 Features High breakdown voltage Low saturation voltage High switching speed Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-emitter Voltage VCEO -400 V Collector-base Voltage VCBO -400 V Emitter-base Voltage VEBO -7 V Collector current IC -0.1 A Collector current (pulse) *1 ICP -0.2 A Collector power dissipation PC 0.5 W 2 *2 Jumction temperature Tj 150 Storage temperature Tstg -55 to +150 * Pw=100ms *2 When mounted on a 40X40X0.7 mm ceramic board http://www.twtysemi.com [email protected] 4008-318-123 1 of 2 Transistors SMD Type Product specification 2SA1759 Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Collector-emitter breakdown voltage BVCEO IC = -1mA -400 V Collector-base breakdown voltae BVCBO IC = -50 A -400 V Emitter-base breakdown voltage -7 V BVEBO IE = -50 A Collector cutoff current ICBO VCB = -400V -10 ìA Emitter cutoff current IEBO VEB = -6V -10 ìA -0.5 V -1.2 V Collector-emitter saturation voltage VCE(sat) IC = -20mA , IB = -2mA Base-emitter saturation voltage VBE(sat) IC = -20mA , IB = -2mA DC current transfer ratio hFE -0.2 VCE = -10V , IC = -10mA 82 180 Transition frequency fT VCE = -10V , IE = 10mA , f = 5MHz 200 MHz Output Capacitance Cob VCB = -10V , IE = 0A , f = 1MHz 36 pF Turn-on time ton IC = -100mA , RL = 1.5KÙ 0.7 ìs Storage time tstg IB1 = -IB2 = -10mA 1.8 ìs Fall time toff VCC=-150V 1 ìs Marking Marking AHP http://www.twtysemi.com [email protected] 4008-318-123 2 of 2