SMD Type Product specification 2SD1767 Features High breakdown voltage, BVCEO=80V, and high current, IC=0.7A. Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector-base voltage Parameter VCBO 80 V Collector-emitter voltage VCEO 80 V Emitter-base voltage VEBO 5 V IC 0.7 A IC (Pulse) * 1 A Collector current 1 PC 0.5 W PC *2 2 W Junction temperature Tj 150 Storage temperature Tstg -55 to +150 Collector power dissipation *1. Pw=10ms. *2. 40X40X0.7mm Ceramic board. Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Collector-base voltage BVCBO IC=50ìA 80 V Collector-emitter voltage BVCEO IC=2mA 80 V Emitter-base voltage BVEBO IE=50ìA 5 V ICBO VCB=50V IEBO VEB=4V Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage VCE(sat) IC=500mA,IB=50mA Forward current transfer ratio hFE Transition frequency fT Output capacitance Cob VCE=3V,IC=0.1A 0.2 82 0.5 ìA 0.5 ìA 0.4 V 390 VCE=10V, IE= -50mA, f=100MHz 120 MHz VCB=10V, IE=0A, f=1MHz 10 pF hFE Classification DC Marking Rank P Q R hFE 82 180 120 270 180 390 http://www.twtysemi.com [email protected] 4008-318-123 1 of 1