IC SMD Type Product specification 2SA1839 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 sets to be made small and slim 0.55 Very small-sized package permitting 2SA1839-applied +0.1 1.3-0.1 +0.1 2.4-0.1 0.4 3 Features 2 +0.1 0.95-0.1 +0.1 1.9-0.1 Small output capacitance. +0.05 0.1-0.01 +0.1 0.97-0.1 Low collector-to-emitter saturation voltage 0-0.1 +0.1 0.38-0.1 Low ON resistance 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO -15 V Collector-emitter voltage VCEO -10 V Emitter-base voltage VEBO -5 V Collector current IC -100 mA Collector current (pulse) ICP -200 mA Base current IB -20 mA Collector dissipation PC 250 mW Jumction temperature Tj 150 Storage temperature Tstg -55 to +150 Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Collector cutoff current IcBO VCB = -12V , IE = 0 -0.1 ìA Emitter cutoff current IEBO VEB = -4V , IC = 0 -0.1 ìA DC current Gain hFE VCE = -2V , IC = -5mA fT VCE = -5V , IC = -10mA 600 MHz Cob VCB = -10V , f = 1MHz 0.9 pF Gain bandwidth product Common base output capacitance Collector-to-emitter saturation voltage Base-to-emitter saturation voltage Collector-to-base breakdown voltage 200 VCE(sat) IC = -10mA , IB =-1mA 600 -0.04 -0.15 VBE(sat) IC = -10mA , IB =-1mA -0.82 -1.1 mV V V(BR)CBO IC = -10ìA , IE = 0 -15 V Collector-to-emitter breakdown voltage V(BR)CEO IC = -1mA , RBE = -10 V Emitter-to-base breakdown voltage V(BR)EBO IE = -10ìA , IC = 0 -15 V ON Resistance Ron IB=-3mA,f=1MHz 3.0 Ù Marking Marking LS http://www.twtysemi.com [email protected] 4008-318-123 1 of 1