Transistors IC SMD Type NPN Epitaxial Planar Silicon Transistors 2SD1935 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 0.4 3 Low collector to emitter saturation voltage. 1 0.55 Large current capacity. +0.1 1.3-0.1 +0.1 2.4-0.1 Features 2 +0.1 0.95-0.1 +0.1 1.9-0.1 Very small-sized package permitting sets to be made +0.05 0.1-0.01 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 smaller and slimer. 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO 15 V Collector-emitter voltage VCEO 15 V Emitter-base voltage VEBO 5 V Collector current IC 0.8 A Collector current (pulse) ICP 3 A Collector dissipation PC 200 mW Jumction temperature Tj 150 Storage temperature Tstg -55 to +150 Electrical Characteristics Ta = 25 Max Unit Collector cutoff current Parameter Symbol ICBO VCB = 12V , IE = 0 100 nA Emitter cutoff current IEBO VEB = 4V , IC = 0 100 nA DC current Gain hFE VCE = 2V , IC = 50mA fT VCE = 2V , IC = 50mA 200 MHz Cob VCB = 10V , f = 1MHz 10 pF Gain bandwidth product Output capacitance Collector-emitter saturation voltage Base-to-emitter saturation voltage Collector-to-base breakdown voltage Testconditons Min Typ 135 900 VCE(sat) IC = 5mA , IB = 0.5mA 10 25 mV VCE(sat) IC = 400mA , IB = 20mA 100 200 mV VBE(sat) IC = 400mA , IB =20mA 0.9 1.2 V V(BR)CBO IC = 10ìA , IE = 0 15 V IC = 1mA , RBE = 15 V V(BR)EBO IE = 10ìA , IC = 0 5 V Collector-to-emitter breakdown voltage V(BR)CEO Emitter-to-base breakdown voltage hFE Classification CT Marking Rank hFE 5 135 6 270 200 7 400 300 8 600 450 900 www.kexin.com.cn 1