KEXIN 2SA1839

Transistors
IC
SMD Type
PNP Epitaxial Planar Silicon Transistors
2SA1839
SOT-23
Unit: mm
+0.1
2.9-0.1
+0.1
0.4-0.1
1
sets to be made small and slim
0.55
Very small-sized package permitting 2SA1839-applied
+0.1
1.3-0.1
+0.1
2.4-0.1
0.4
3
Features
2
+0.1
0.95-0.1
+0.1
1.9-0.1
Small output capacitance.
+0.05
0.1-0.01
+0.1
0.97-0.1
Low collector-to-emitter saturation voltage
0-0.1
+0.1
0.38-0.1
Low ON resistance
1.Base
2.Emitter
3.collector
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
Collector-base voltage
VCBO
-15
V
Collector-emitter voltage
VCEO
-10
V
Emitter-base voltage
VEBO
-5
V
Collector current
IC
-100
mA
Collector current (pulse)
ICP
-200
mA
Base current
IB
-20
mA
Collector dissipation
PC
250
mW
Jumction temperature
Tj
150
Storage temperature
Tstg
-55 to +150
Electrical Characteristics Ta = 25
Parameter
Symbol
Testconditons
Min
Typ
Max
Unit
Collector cutoff current
IcBO
VCB = -12V , IE = 0
-0.1
ìA
Emitter cutoff current
IEBO
VEB = -4V , IC = 0
-0.1
ìA
DC current Gain
hFE
VCE = -2V , IC = -5mA
fT
VCE = -5V , IC = -10mA
600
MHz
Cob
VCB = -10V , f = 1MHz
0.9
pF
Gain bandwidth product
Common base output capacitance
Collector-to-emitter saturation voltage
Base-to-emitter saturation voltage
200
VCE(sat) IC = -10mA , IB =-1mA
600
-0.04 -0.15
VBE(sat) IC = -10mA , IB =-1mA
-0.82
-1.1
mV
V
V(BR)CBO IC = -10ìA , IE = 0
-15
V
Collector-to-emitter breakdown voltage
V(BR)CEO IC = -1mA , RBE =
-10
V
Emitter-to-base breakdown voltage
V(BR)EBO IE = -10ìA , IC = 0
-15
V
Collector-to-base breakdown voltage
ON Resistance
Ron
IB=-3mA,f=1MHz
3.0
Ù
Marking
Marking
LS
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